USH64H - Full-wave rectifier for CMOS IC chip - Google Patents

Full-wave rectifier for CMOS IC chip Download PDF

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Publication number
USH64H
USH64H US06/521,059 US52105983A USH64H US H64 H USH64 H US H64H US 52105983 A US52105983 A US 52105983A US H64 H USH64 H US H64H
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US
United States
Prior art keywords
output
transistor
substrate
full
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US06/521,059
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English (en)
Inventor
Hanafy E. Maleis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Bell Labs USA
AT&T Corp
Original Assignee
AT&T Bell Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Bell Laboratories Inc filed Critical AT&T Bell Laboratories Inc
Priority to US06/521,059 priority Critical patent/USH64H/en
Assigned to BELL TELEPHONE LABORATORIES, A NY CORP. reassignment BELL TELEPHONE LABORATORIES, A NY CORP. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: MELEIS, HANAFY EL SAYED
Priority to JP59165045A priority patent/JPS6057961A/ja
Application granted granted Critical
Publication of USH64H publication Critical patent/USH64H/en
Priority to JP036605U priority patent/JPH0686355U/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Definitions

  • This invention relates to integrated circuit (IC) chips and, more particularly, to such chips in which functional elements are defined by complementary metal-oxide-semiconductor (CMOS) technology.
  • CMOS complementary metal-oxide-semiconductor
  • CMOS full-wave rectifiers are difficult to achieve. The reason is that in the past any diodes used to define a full-wave rectifier served, via parasitic transistor action, to send current through the chip substrate to ground, thus interfering with the realization of full-wave rectification action.
  • the problem of shorting currents to ground through the substrate is avoided by employing two NMOS transistors as substitutes for two of four diodes normally used for full-wave rectification and by connecting and operating the two transistors so that they function as "diodes" turning on and off.
  • the gate electrodes of the transistors are connected across a power supply, the substrate is kept electrically floating and the "sources" of the "diodes" are interconnected for connection to a load.
  • FIG. 1 is a circuit diagram of a prior art full-wave rectifier
  • FIG. 2 is a cross section of a CMOS chip fragment showing the circuit diagramed in FIG. 1;
  • FIG. 3 is a circuit diagram of a full-wave rectifier in accordance with this invention.
  • FIG. 4 is a cross section of a CMOS chip fragment showing the circuit diagramed in FIG. 3.
  • FIG. 1 shows a schematic circuit diagram 10 of a prior art full-wave rectifier.
  • the diagram shows the conventional bridge arrangement of four diodes 11, 12, 13 and 14 connected between nodes 16, 17, 18 and 19.
  • Load resistance 20 is connected between nodes 16 and 18.
  • a signal source 21 is connected between nodes 17 and 19.
  • the operation of a prior art, full-wave rectifier is well known and not discussed further herein.
  • FIG. 2 shows a cross section of a fragment of a CMOS IC chip.
  • the chip has an N-type substrate 50 maintained at voltage V DD with two P-type and two N-type diffused regions adjacent surface 51 formed in p-tub 2.
  • the diffused regions define diodes designated as in FIG. 1 and poled as shown.
  • Diodes 11 and 12 on the one hand and diodes 13 and 14 on the other are connected across resistor 20.
  • Signal source 21 is connected across nodes 17 and 19 of FIG. 1 or FIG. 2.
  • FIG. 2 cannot be operated as a full-wave rectifier because of the existence of (parasitic NPN) transistors 60 and 63.
  • diode 13 When diode 13 is forward biased, for example, current flows in transistor 60 primarily through the substrate rather than through (load) resistor 20 defeating full-wave rectification.
  • a similar transistor action occurs when diode 14 is forward biased via parasitic transistor 63 .
  • FIG. 3 shows a circuit schematic of a full-wave rectifier 70 which can be implemented in CMOS technology.
  • Diodes 71 and 72 of FIG. 3 correspond to diodes 11 and 12 of FIG. 1; transistors 73 and 74 correspond to diodes 14 and 13 of FIG. 1, respectively.
  • Signal source 78 corresponds to signal source 21 of FIG. 1.
  • the nodes 16, 17, 18 and 19 of FIG. 1 correspond to nodes 82, 83, 84 and 85 of FIG. 3, respectively. It is to be noted that the gate electrode of transistor 74 is connected to node 85, and the gate electrode of transistor 73 is connected to node 83. The sources of transistors 73 and 74, in contradistinction, are connected to nodes 85 and 83, respectively, the drains being connected to node 84.
  • FIG. 4 shows a cross section of an IC fragment for implementing the circuit of FIG. 3.
  • the fragment comprises an N-type substrate 100 in which two p-tub areas 101 and 102 are formed.
  • N + -type diffusion areas 104 and 105 and 106 and 107 define transistors 74 and 73 of FIG. 3, respectively, therebetween.
  • areas 105 and 106 are electrically interconnected at node 84 (compare FIG. 3) for connection to load resistor 90.
  • no parasitic transistors are present for permitting action equivalent to that of transistors 60 and 63 of FIG. 2.
  • Each complete current path is formed by adding a first or a second segment, between the source and the load, where each segment includes a diode and a transistor and each is adapted to activate the gate of only the transistor in the other of the first or second segments which includes the diode not instantaneously in use.

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  • Rectifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
US06/521,059 1983-08-08 1983-08-08 Full-wave rectifier for CMOS IC chip Abandoned USH64H (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US06/521,059 USH64H (en) 1983-08-08 1983-08-08 Full-wave rectifier for CMOS IC chip
JP59165045A JPS6057961A (ja) 1983-08-08 1984-08-08 相補型金属−酸化物半導体デバイス
JP036605U JPH0686355U (ja) 1983-08-08 1993-07-05 相補型金属−酸化物半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/521,059 USH64H (en) 1983-08-08 1983-08-08 Full-wave rectifier for CMOS IC chip

Publications (1)

Publication Number Publication Date
USH64H true USH64H (en) 1986-05-06

Family

ID=24075163

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/521,059 Abandoned USH64H (en) 1983-08-08 1983-08-08 Full-wave rectifier for CMOS IC chip

Country Status (2)

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US (1) USH64H (ja)
JP (2) JPS6057961A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030048652A1 (en) * 2001-07-20 2003-03-13 Lontka Bruce J. Fire detection system including an automatic polarity sensing power and signal interface
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US20120126334A1 (en) * 2010-11-24 2012-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown voltage improvement with a floating substrate

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2704874B2 (ja) * 1987-07-24 1998-01-26 ヤマザキマザック株式会社 複合加工工作機械
JPS63300802A (ja) * 1987-05-29 1988-12-08 Yamazaki Mazak Corp 対向スピンドル旋盤
EP0374259B1 (en) * 1988-04-19 1995-10-18 Nakamura-Tome Precision Ind. Co., Ltd. Two opposed main shaft type cnc lathe
JPH0683921B2 (ja) * 1988-04-19 1994-10-26 中村留精密工業株式会社 ２主軸対向型ｃｎｃ旋盤
JPH0785861B2 (ja) * 1990-10-08 1995-09-20 日立精機株式会社 数値制御旋盤とその運転方法
JP4521598B2 (ja) * 2004-10-13 2010-08-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置、非接触電子装置並びに携帯情報端末
DE102005039867B4 (de) * 2005-08-23 2016-04-07 Power Systems Technologies Gmbh Eingangsschaltung für ein Schaltnetzteil
TWI545882B (zh) * 2015-03-20 2016-08-11 漢磊科技股份有限公司 二晶片整合橋式整流器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052860A2 (de) 1980-11-26 1982-06-02 Deutsche ITT Industries GmbH Monolithisch integrierte Gleichrichter-Brückenschaltung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113262A (en) * 1980-12-30 1982-07-14 Seiko Epson Corp Voltage dividing system for semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052860A2 (de) 1980-11-26 1982-06-02 Deutsche ITT Industries GmbH Monolithisch integrierte Gleichrichter-Brückenschaltung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US20030048652A1 (en) * 2001-07-20 2003-03-13 Lontka Bruce J. Fire detection system including an automatic polarity sensing power and signal interface
US6738238B2 (en) 2001-07-20 2004-05-18 Siemens Building Technologies, Inc. Fire detection system including an automatic polarity sensing power and signal interface
US20120126334A1 (en) * 2010-11-24 2012-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown voltage improvement with a floating substrate

Also Published As

Publication number Publication date
JPH0686355U (ja) 1994-12-13
JPS6057961A (ja) 1985-04-03

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