WO1984003992A1 - Dispositif integre a film mince - Google Patents

Dispositif integre a film mince Download PDF

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Publication number
WO1984003992A1
WO1984003992A1 PCT/JP1984/000145 JP8400145W WO8403992A1 WO 1984003992 A1 WO1984003992 A1 WO 1984003992A1 JP 8400145 W JP8400145 W JP 8400145W WO 8403992 A1 WO8403992 A1 WO 8403992A1
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WO
WIPO (PCT)
Prior art keywords
thin film
thin
film
integrated device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1984/000145
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English (en)
Japanese (ja)
Inventor
Koji Nomura
Hisahito Ogawa
Atsushi Abe
Tsuneharu Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58057552A external-priority patent/JPS59182572A/ja
Priority claimed from JP58098343A external-priority patent/JPS59224098A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to DE8484901397T priority Critical patent/DE3480243D1/de
Publication of WO1984003992A1 publication Critical patent/WO1984003992A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5

Definitions

  • the present invention relates to a thin film integrated device in which a plurality of thin film elements such as a thin film capacitor, a thin film transistor, and a thin film light emitting element are integrated, and in particular, a new composite oxide thin film formed by a spark method.
  • a thin film integrated device that can improve reliability by using
  • a metal thin film layer capable of forming an anode such as tantalum, titanium, or aluminum
  • a sputtering method vacuum deposition
  • the metal is reactively sputtered in the product obtained by i-oxidation by anodic oxidation or in an inert gas containing oxygen, or the oxide of the metal in an inert gas.
  • Many materials obtained by direct sputtering are known.
  • oxide films are often at the root of the function of the thin film element, and the characteristics of the oxide film itself determine the quality of the thin film element.
  • anodic oxide films such as tantalum and aluminum are well known.
  • the anodic oxidation method requires only a complicated manufacturing process, and it is essential to provide a current path for anodization.]) When used, integration becomes difficult because the freedom of pattern design is limited.
  • the thin film capacitor is formed by anodic oxidation.
  • the -Tantalum oxide formed by the sputtering method has many pinholes and large leakage current.
  • the breakdown electric field strength E b is low (about 1.5 X 1 ⁇ ⁇
  • a thin film transistor for driving a liquid crystal or an EL display device, a thin film transistor having a large ratio of force, on-current to off-current, which has been widely studied, is desired.
  • the gate - as the gate oxide film, mutual co-Ndaku data Nsu (g m)
  • the off current! An oxide film with low leakage current is needed to make it smaller.
  • the electric field strength for obtaining EL light emission is as high as about 1 ⁇ V ⁇ ⁇ 1, and an electric field is efficiently applied to the light emitting layer. Moreover, the emission threshold voltage is reduced.
  • the oxide film set on both sides or one side of the light emitting layer has a large relative dielectric constant ( r ), a high withstand voltage, and a small leakage current.
  • a matrix-type EL display device is composed of a thin-film ⁇ L element, a thin io-film transistor, a thin-film capacitor, etc., in order to increase reliability, the oxidation used in these elements must be improved.
  • the film needs to have the above-described characteristics. The same applies to the matrix type liquid crystal display device.
  • the present invention provides a thin film using a composite oxide sputter thin film mainly composed of aluminum and tantalum, which has a large relative dielectric constant ( r ) and a high breakdown electric field strength ( Eb ) and a small leakage current.
  • An integrated device is provided.
  • the composite oxide thin film is formed by packing a composite target containing tantalum or tantalum oxide and aluminum or aluminum oxide as main components.
  • a completely oxidized composite oxide thin film can be formed by performing reactive sputtering in a rare gas containing 1% or more of oxygen. can get.
  • the number of atoms of tantalum in the composite oxide sputter thin film is X, aluminum 5Z
  • the composite oxide sputtered thin film according to the present invention is used as a dielectric thin film forming a thin film capacitor, a large capacity and stable dielectric properties can be obtained.
  • Semiconductor layer and gate of said composite oxide ⁇ sputtering thin film constituting the thin film bets run register -
  • the use as a gate insulating film small 3 ⁇ 4 characteristics of gate leakage current g m large active - gate between Bok electrode Therefore, it is possible to obtain a thin-film transistor having a large ratio of on-current to off-current.
  • the semiconductor layer is cadmium selenide (CdSe)
  • the interface characteristics are good.9, and the characteristics are stable with little change over time.
  • the composite oxide sputter thin film of the present invention is provided on both sides or one side of the phosphor thin film constituting the thin film light emitting device ', the phosphor thin film
  • a high electric field with high efficiency can be applied to the 15 film, and a thin-film light-emitting device having high emission luminance and drivable at low voltage can be obtained.
  • the phosphor thin film is a light emitting layer mainly composed of zinc sulfide containing a luminescent active substance, it is known as a thin film EL device.
  • the brightness is particularly high, and the insulation is high.
  • n Cu, Ag, A £, Tb, Dy, Er, Pr, Sm, Ho, Tm and a small number selected from the group consisting of these halogenated compounds.
  • thin-film light-emitting elements of various emission colors can be configured.
  • the display cell of the picture element is a switching transistor or one of them
  • a matrix type EL display device comprising a transistor for power supply, if at least one layer of the composite oxide sputtered thin film is provided, the switching transistor and the power transistor are provided. It can be used as a gate oxide film or as a dielectric thin film of a storage capacitor, and the characteristics of each thin film element can be improved for the same reasons as described above, and as a whole it is stable and reliable A thin film integrated device having high performance can be obtained.
  • Fig. 1 shows a thin film capacitor used in the thin film integrated device of the present invention.
  • FIG. 2 shows the relationship between the atomic ratio of tantalum in the composite oxide thin film, the relative dielectric constant (. ( 9r )) and the dielectric loss (tan ⁇ 5).
  • Fig. 3 shows the leakage current of the applied voltage and the unit capacity when the atomic ratio of tantalum is changed.
  • Fig. 4 shows the tantalum atoms in the composite oxide sputter thin film.
  • Fig. 5 shows the relationship between the ratio and the breakdown electric field strength ( Eb ) and the product of Eb and the relative permittivity ((? R )) ( Eb ⁇ r ).
  • FIG. 6 is a cross-sectional view showing an example of a thin film transistor, FIG.
  • FIG. 6 is a diagram showing a change over time of the drain current of the thin film transistor used in the thin film integrated device of the present invention, and FIG. Sectional view of the thin-film light-emitting device used in the thin-film integrated device.
  • FIG. 8 shows the applied voltage when the thin-film light-emitting device shown in FIG. 9 (a) and 9 (b) are circuit diagrams of one pixel when the thin film integrated device of the present invention is a matrix type EL display device and a cross-sectional view of one embodiment, respectively. It is.
  • FIG. 1 shows an embodiment of a thin film capacitor in a thin film integrated device using a composite oxide sputtered thin film according to the present invention.
  • an electrode 2 is provided on one surface of a support substrate 1 in which an insulating film is formed on the surface of an insulator such as glass or a conductor such as metal.
  • the electrode 2 is made of aluminum having a thickness of about 100 nm and is formed by a vacuum evaporation method or the like.
  • a composite oxide sputtered thin film mainly composed of tantalum and aluminum having a thickness of about 100 nm is formed as the dielectric thin film 3.
  • an electrode 4 is provided on the dielectric thin film 3.
  • the electrode 4 is an aluminum layer having a thickness of about 100 nm as in the case of the electrode 2, and is formed by a vacuum deposition method or the like.
  • the dielectric thin film 3 is made of, for example, a combination of a tantalum and an aluminum plate.
  • the target was formed by reactive sputtering in an inert gas containing oxygen. Ratio of oxygen is set to 25%, 4. High-frequency magnetron sputtering was performed in an atmosphere of 0 X 1 O " 5 Torr. According to this method, the area ratio between tantalum and aluminum of the composite target was changed. Complex oxide spa of any composition ratio
  • a 20-thin thin film can be formed with good reproducibility.
  • Fig. 2 shows the atomic ratio of tantalum in the composite oxide spa thin film, where the number of tantalum O atoms is X and the number of aluminum atoms is y.
  • OMPI OMPI
  • ⁇ ⁇ can be freely selected from 7 to 25. If the atomic ratio of tantalum is selected appropriately, the composite oxide sputtered thin film with high r can be obtained. Can be obtained. On the other hand, tan ⁇ is about o. Has almost no change at 2 % and has excellent dielectric properties.
  • Figure 3 shows the relationship between the leakage current per unit capacity and the applied voltage when the atomic ratio of tantalum in the composite oxide sputter thin film was changed.
  • the solid lines a, b, c, and d in the figure each have a tantalum atomic ratio of 1. These are the measurement results for 00, O.84, O.37, and O.OO.
  • the leakage current of the composite oxide thin film (b .., c) is extremely small compared to the case of tantalum oxide (a).
  • the applied voltage is 6 OV or less, the relative dielectric constant ( ⁇ ? R ) is larger than that of aluminum oxide only (d). Therefore, the leakage current per capacitor is small.
  • Figure 4 shows the ratio of the number of atoms of tantalum in the composite oxide sputtered thin film to the breakdown electric field strength ( Eb ) and the product of Eb and the relative permittivity ( r ).
  • the lower electrode material can be freely selected in the composite oxide thin film produced by sputtering. J For example, if a low-resistance thin film such as aluminum is used, the dielectric loss (tan ⁇ ) can be obtained even at high frequencies. ) Can be reduced, and the practical frequency range can be broadened.
  • the composite oxide sputtered thin film near the interface of the lower electrode is completely oxidized, it has the features of a high breakdown electric field strength ( Eb ) and a small leakage current.
  • composite oxide sputtered thin film of the present invention can be used as an electrode material
  • the composite oxide thin film prepared by the reactive high-frequency magnetron sputtering method was described, but the DC sputtering method, the ion beam sputtering method, etc. Similar effects were obtained with the composite oxide thin films obtained by the various sputtering methods.
  • FIG. 5 shows another embodiment in which this composite oxide sputter thin film is used for a thin film transistor.
  • This thin film transistor uses a composite oxide sputter thin film having the above-described characteristics as a gate insulating film, and therefore has a larger mutual conductance (g m ) than the conventional example. Because of this, the on-current is large and the gate leakage current is small. At this time, when the gate voltage is changed from OV to 20 V, the ratio between the on-state current and the off-state current is 1 OOOO times or more.
  • FIG. 7 shows an embodiment in which this composite oxide sputtered thin film is used for a thin film light emitting device.
  • element 14 was electron beam evaporated. Thereafter, heat treatment was performed at 60 ° C. for 1 hour in a vacuum.
  • This element was divided into three parts. Of these, element 1 and element 2 were used as comparative conventional examples. Each of them was an insulator layer 15 made of tantalum oxide having a thickness of about 300 nm and aluminum oxide.
  • An insulator layer 16 made of aluminum was formed by a high-frequency magnetron sputtering method.
  • the insulator layer 1a composed of the composite oxide thin film having the atomic ratio of tantalum of the present invention of O.a was formed by a high-frequency magnetron pack method. The last 1 OO nm about light reflection for Aluminum two U electrodeless 1 8 having a film thickness was vacuum deposited.
  • the device having the structure in which the insulator layers are provided on both sides of the phosphor layer is described in the case where the composite oxide sputter thin film of the present invention is provided only in the upper insulator layer. The same effect was obtained when it was set on either side or one side of the optical body layer.
  • the luminescent active material is Mn
  • FIG. 9 (a) shows a circuit diagram of one picture element when the thin film integrated device of the present invention is a matrix type EL display device. That is, one pixel is composed of a switching transistor, a storage capacitor C s , a power transistor T 2 , and an EL element], a scanning line, i + 1 ... and the signal lines Yj, ... cross each other. In order to cross the electrodes in the X and Y directions, it is necessary to electrically insulate both electrodes.
  • the composite oxide sputtered thin film formed simultaneously with the formation of the thin film element can be used as an electrical insulating layer between the X electrode and the Y electrode thin films.
  • FIG. 9 (b) is a cross-sectional view of one embodiment of the matrix type EL display device.
  • Glass provided an EL layer 2 O on an insulating substrate 1 9 such as in the manner described above, the scan I Tsuchingu preparative La Nji Star 1 ⁇ gate electrode 2 1 a thereon, one side of the storage capacitor C s gate electrode 2 and second electrode and the power preparative run-Soo data T 2, EL layer vacuum deposition and photo Al Miniu beam layer having a thickness of about 1 OO nm as a light reflection electrodes 2 3 It is formed using an etching technique.
  • a composite oxide thin film of the present invention having a thickness of about 5 OO nm thereon to the high-frequency magnetic Bok Ron sputtering, patterning is performed have use a photoetching technique, gate insulating film of the T 1 2 4 and C s
  • Dielectric thin film layer der cutlet of forming a layer 2 5 a tau 2 of gate insulation ⁇ .
  • a semiconductor layer 2 6, 2 7 T 2 at the end,, T 2 of the source electrode, de Tray down electrode and C s of the side electrode and is Aluminum two U beam Calalou] ?, OO Film thickness of about nm
  • An electrode layer 28 is provided.
  • the present invention provides a composite oxide thin film using an oxide thin film mainly composed of tantalum and aluminum formed by a sputtering method. ] 5.
  • thin film capacitors such as large capacity thin film capacitors, thin film transistors with large on-Z-off ratios, and thin film light emitting devices with high luminance. Since a thin film integrated device in which one or more types are integrated can be realized, and the operating characteristics and reliability of the thin film integrated device can be greatly improved, its practical value is large.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un substrat isolant d'un dispositif intégré à film mince est pourvu d'éléments à film mince, tels qu'un condensateur à film mince, un transistor à effet de champ à film mince et un élément électroluminescent à film mince, utilisant chacun un film isolant (3, 7, 13, 15, 16) comme l'un des éléments constitutifs. Le film isolant est constitué par un film d'oxyde composite pulvérisé dont le tantale et l'aluminium sont les composants principaux. Etant donné qu'un film d'oxyde composite pulvérisé présente l'avantage d'une inductivité spécifique importante et d'une résistance de champ au placage du diélectrique ainsi qu'un faible courant de fuite, son application dans ces éléments à film mince permet d'améliorer leur caractéristique de fonctionnement et leur fiabilité en général.
PCT/JP1984/000145 1983-03-31 1984-03-29 Dispositif integre a film mince Ceased WO1984003992A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE8484901397T DE3480243D1 (en) 1983-03-31 1984-03-29 Method of manufacturing thin-film integrated devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58057552A JPS59182572A (ja) 1983-03-31 1983-03-31 薄膜トランジスタとその製造方法
JP58098343A JPS59224098A (ja) 1983-06-02 1983-06-02 薄膜発光素子

Publications (1)

Publication Number Publication Date
WO1984003992A1 true WO1984003992A1 (fr) 1984-10-11

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Family Applications (1)

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PCT/JP1984/000145 Ceased WO1984003992A1 (fr) 1983-03-31 1984-03-29 Dispositif integre a film mince

Country Status (4)

Country Link
US (1) US4602192A (fr)
EP (1) EP0139764B1 (fr)
DE (1) DE3480243D1 (fr)
WO (1) WO1984003992A1 (fr)

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EP0139764B1 (fr) 1989-10-18
EP0139764A1 (fr) 1985-05-08
US4602192A (en) 1986-07-22
EP0139764A4 (fr) 1986-11-05

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