WO1994019794A1 - Tete de lecture magneto-resistive - Google Patents

Tete de lecture magneto-resistive Download PDF

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Publication number
WO1994019794A1
WO1994019794A1 PCT/JP1994/000296 JP9400296W WO9419794A1 WO 1994019794 A1 WO1994019794 A1 WO 1994019794A1 JP 9400296 W JP9400296 W JP 9400296W WO 9419794 A1 WO9419794 A1 WO 9419794A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
head
thickness
ferromagnetic thin
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1994/000296
Other languages
English (en)
Japanese (ja)
Inventor
Hideo Suyama
Tetsuo Sekiya
Shuichi Haga
Wataru Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of WO1994019794A1 publication Critical patent/WO1994019794A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Definitions

  • the present invention relates to a magneto-resistance effect type magnetic head suitable for reading out an information signal recorded on a hard disk, for example.
  • Background technology For example, a read-only magnetic head mounted on a hard disk drive or the like has a configuration that reads current resistance and changes in resistance due to signal magnetic flux as a voltage change because of its excellent short-wavelength sensitivity.
  • a magnetoresistive head hereinafter referred to as an MR head is generally used.
  • a magnetoresistive effect element 102 (hereinafter, referred to as an MR element 102) is formed on a substrate 101 made of a nonmagnetic material as a slider.
  • MR element 102 magnetoresistive effect element 102
  • ABS surface 103 sliding surface 103
  • the MR element 102 is arranged such that one side edge in the longitudinal direction is exposed on the ABS 103, and the MR element 102 is provided with 0 A sense current is supplied in parallel with 3
  • the MR element 102 is provided with wiring conductors 104, 105 at both ends perpendicular to the ABS surface 103.
  • the MR element 102 is made of a thin ferromagnetic thin film 102b, 1
  • the MR element 102 is made of a thin ferromagnetic thin film 102b, 1
  • the present invention provides a magnetic field that can greatly improve the reproduction output by the giant magnetoresistance effect without deteriorating the function of the MR element even if the nonmagnetic metal layer of the MR element exposed on the ABS surface is corroded.
  • Resistive magnetic head The purpose is to provide
  • the present invention provides a magnetoresistive element having a laminated film structure in which a pair of ferromagnetic thin films are laminated via a nonmagnetic metal layer,
  • the nonmagnetic metal layer is It is characterized by consisting of Cu.
  • the film thickness of Cu is less than 10 nm.
  • the MR element has a laminated film structure in which a pair of ferromagnetic thin films are laminated via a nonmagnetic metal layer made of Cu. Is greatly improved.
  • the MR element is provided perpendicular to the ABS surface, and the tip electrode laminated on the tip side of the MR element is provided so as to be exposed on the ABS surface. Even if the non-magnetic metal layer (C u) facing the ABS surface is corroded, the magnetic permeability of such a vertical MR head is the area sandwiched between the electrodes. It is sufficiently ensured by the upper and lower ferromagnetic thin films provided between the layers. Therefore, the function of the MR element does not deteriorate in such a vertical MR head as in the horizontal MR head.
  • Fig. 1 is a schematic plan view of a horizontal MR head in which MR elements are arranged parallel to the ABS.
  • FIG. 2 is an enlarged perspective view of the main part of a horizontal MR head in which the MR element is arranged parallel to the ABS.
  • FIG. 4 is an enlarged perspective view of a main part of the MR head to which the present invention is applied, in which an MR element part is partially broken.
  • FIG. 5 is a characteristic diagram showing a resistance change rate when the thickness of a single Fe-Ni film is changed.
  • Fig. 6 is a schematic diagram of an MR head for explaining a reproduction effective gap length.
  • Fig. 7 is a characteristic diagram showing the resistance change of the MR element when the magnetic field is swept positively and negatively in an MR head having a ferromagnetic thin film thickness of 3 Onm.
  • Figure 8 is a characteristic diagram showing the resistance change of the MR element when the magnetic field is swept positively and negatively in an MR head with a ferromagnetic thin film thickness of 10 nm or less.
  • FIG. 9 is a characteristic diagram showing the rate of change of resistance when the film thickness of Cu is changed. ⁇ Best Mode for Carrying Out the Invention Hereinafter, referring to the drawings for specific examples to which the present invention is applied. Shina The power will be described in detail.
  • the wiring conductors 2 for supplying a sense current, 3 is connected to the front end and the rear end, respectively, to form an MR element 4, and a pair of shield magnetic bodies 5, 6 are formed so as to sandwich the MR element 4 from above and below. .
  • the MR element 4 is formed as a pattern having a rectangular planar shape, and its longitudinal direction is perpendicular to the ABS surface 7 which is a sliding surface for the hard disk (perpendicular direction). And one end edge 4 d faces the ABS surface 7.
  • the MR element 4 is made of a ferromagnetic thin film such as Vermalloy, and is formed by vapor deposition or sputtering.
  • the MR element 4 includes a pair of ferromagnetic thin films (MR films) 4 b, 4 b, It has a laminated film structure in which 4c are laminated.
  • Cu is used as the nonmagnetic metal layer 4a, and a Ni—Fe alloy or a Ni—Fe is used for the ferromagnetic thin films 4b and 4c. — Co alloy was used.
  • the wiring conductors 2 and 3 connected to the front end and the rear end of the MR element 4, respectively, are formed on the side facing the shield magnetic body 6 in the upper layer.
  • the wiring conductor 2 provided on the front end side (the ABS surface 7 side) of the MR element 4 has a substantially rectangular planar shape with one edge 2a facing the ABS surface 7. It is formed as a small conductor pattern.
  • the wiring conductor 2 is perpendicular to the MR element 4. And are electrically connected at a portion to be stacked on the MR element 4.
  • the wiring conductor 3 provided on the rear end side also has one end laminated on the rear end of the MR element 4 and the other end electrically connected to the MR element 4.
  • a sense current flows in the MR element 4 in a direction orthogonal to the ABS plane 7 (longitudinal direction of the MR element 4).
  • a bias conductor 8 for applying a bias magnetic field to the MR element 4 is provided between the wiring conductors 2 and 3.
  • the bias conductor 8 is provided on a central portion in the longitudinal direction of the MR element 4 so as to cross (cross) the MR element 4 vertically.
  • the bias conductor 8 is laminated on the MR element 4 via an insulating film 9.
  • the lower shield magnetic member 5 is made of a soft magnetic metal layer such as permalloy. It is formed as a wide pattern having a substantially rectangular planar shape with one end thereof facing.
  • the upper shield magnetic body 6 is also made of a soft magnetic metal layer such as permalloy similarly to the lower shield magnetic body 5, and has a flat rectangular shape with one end facing the ABS surface 7. It is formed as a pattern. Further, the shield magnetic body 6 is bent so as to be close to the MR element 4 on the ABS surface 7 side, so that the distance between the shield magnetic body 6 and the wiring conductor 2 on the distal end side is reduced.
  • the lower layer Magnetic gap for reproduction g! A 1 that functions as a gap film that constitutes
  • a base film 10 composed of 2/3 is provided.
  • the insulating film 1 made of A 1 2 0 3, etc. which serves as a gap film constituting the upper layer of the reproducing magnetic formic Yap g 2 1 is provided.
  • the insulating film 11 is also provided between the MR element 4 and the upper shield magnetic body 6 to prevent magnetic coupling between the MR element 4 and the shield magnetic body 6.
  • a protective film layer 12 for protecting the MR head is laminated on the upper shield magnetic body 6.
  • one end 4 d of the MR element 4 is exposed on the ABS surface 7.
  • the MR element 4 is arranged perpendicular to the ABS surface 7, for example, Even if the one edge 4d of the MR element 4 is corroded, the magnetic permeability is between the wiring conductors 2 and 3, so the magnetic permeability is the upper and lower sides of the nonmagnetic metal layer 4a in this MR sensitive part.
  • the ferromagnetic thin films 4b and 4c are sufficiently secured. Therefore, a decrease in the reproduction output can be suppressed.
  • the frequency characteristics during reproduction are improved, the S / N ratio is increased up to higher frequencies, and even when the track is narrowed, the reproduction output is greatly improved by the giant magnetoresistance effect.
  • the above object can be achieved by defining the film thickness of the MR element 4 in this manner for the following reason.
  • the resistance change rate becomes larger as shown in FIG. It will be big.
  • the rate of change in resistance referred to here indicates the ratio of the change in resistance when a magnetic field is applied until the ferromagnetic material is saturated with respect to the resistance value of the ferromagnetic material in the absence of a magnetic field.
  • the value with a resistance change rate of about 2% at a film thickness of 30 nm rapidly decreases at a thickness of 20 nm or less. The main reason for this is that the resistance increases rapidly as the thickness decreases.
  • the thickness is too thin, for example, 2 O nm or less, it is adopted because the increase in resistance becomes a problem as a head (inductance becomes too high), and the variation in film formation becomes large. Had not been. ''
  • the linear recording density and track density have become extremely large, and have exceeded 100 KFCI and 500 TPI or more. The performance must be achieved. At this high density, the reproduction gap must be 0.15 m and the reproduction head width must be 3 zm or less.
  • the MR element 4 having a laminated film structure in which the thickness of the ferromagnetic thin films 4 b and 4 c is 30 nm and the thickness of the nonmagnetic metal layer 4 a is 10 nm is used.
  • the film thickness increases, the frequency characteristics during reproduction cannot be extended to high frequencies. Also, the stability of the MR element 4 is degraded. Furthermore, a giant magnetoresistance effect cannot be obtained.
  • Play effective gap length L in head to MR which is substantially plus the distance t 2 between the thickness t of the MR element 4, and the MR element 4 shielding magnetic member 6 and Become.
  • the distance between the shield magnetic bodies 5 and 6 is the same when viewed from the MR element 4. Therefore, if the overall thickness of the MR element 4 is about 7 O nm, the distance between the MR element 4 and the shield magnetic body 6 must be 0.1 zm or less. Difficult to create. For this reason, it is advantageous to make the thickness of the MR element 4 significantly smaller, specifically, 20 nm (0.02 mm) or less.
  • the ferromagnetic thin films 4b and 4c be made to have a thickness of 10 nm using a Ni—Fe alloy, and the nonmagnetic metal layer 4a be made to have a thickness of 2 nm using Cu.
  • the thickness of the ferromagnetic thin films 4b and 4c is about 30 nm, as shown in Fig. 7, the current flowing through the MR element 4 by about 10 mA causes Changes in resistance can sometimes show discontinuous values or cause hysteresis. This poses a problem for stability as a playback head.
  • the ferromagnetic thin films 4 b and 4 forming the MR element 4 are formed to have a thickness of 1 Onm or less, and the intermediate nonmagnetic metal layer 4 a is formed of A 12 12 3 ⁇ (4 nm If a layer with a continuity (film formation) with a thickness of about 2 nm, such as Cu or vanadium, is used instead of an element with the same shape, the continuity as shown in Fig. 8 can be obtained. Therefore, stable characteristics without hysteresis can be obtained. This is a necessary condition for obtaining stable characteristics as a reproduction head.
  • the reason why the MR element 4 is stabilized when the film thickness is reduced is that when the width of the MR element 4 is 3 m or less to 1 zm, the influence of the demagnetizing field due to the thickness and the width increases.
  • the rate of change in resistance decreases as shown in FIG. Although it is missing, it is rarely used in the past, but making it thinner is not necessarily a disadvantage. The reason is that the same signal value (current density increases) and the same signal magnetic field When it enters (the magnetic flux density is large), the resistance change increases in proportion to each. (However, it is assumed that the resistance change rate ⁇ has hardly changed.)
  • FIG. 9 shows the results when ⁇ -Fe-Co was used as the ferromagnetic thin films 4b and 4c, the film thickness was reduced to 10 nm or less, and Cu was varied from 1 nm or less to 4 nm. It shows the rate of change in resistance. As can be seen from this figure, it can be seen that the resistance change rate changes periodically depending on the thickness of Cu.
  • the magnetization directions of the ferromagnetic thin films 4 b and 4 c where the giant magnetoresistance effect occurs are different. This is because it is easy to use as an MR head, and the film formation stability, thickness, variation, etc. are superior to 1. Onm. Therefore, by making the film thickness of the ferromagnetic thin films 4 b and 4 c 10 nm or less and using less than 1 Onm (several nm or less) of Cu as the nonmagnetic metal layer 4 a, the MR element 4 becomes stable. In addition, a stable track can be obtained even if the track is narrowed. Furthermore, when a head is used, the adverse effect of the MR element thickness is reduced, good frequency characteristics are easily obtained, and the output can be increased by using the giant magnetoresistance effect by using Cu for the nonmagnetic metal layer 4a.
  • a bias magnetic field may be applied to the MR element 4 by a current. This eliminates the need for the dedicated bias conductor 8, and allows the head to be reduced in size by reducing the number of terminals.
  • the MR element formed by laminating the ferromagnetic thin film via the non-magnetic metal layer is arranged perpendicular to the ABS surface, the MR element facing the ABS surface Even if the edge of the vertical MR head corrodes, the magnetic permeability between the top and bottom electrodes of the vertical MR head is the magnetic sensing part, so the magnetic permeability is the upper and lower ferromagnetic layers provided between the nonmagnetic metal layers.
  • the body thin film is sufficiently ensured, and a decrease in reproduction output can be suppressed.
  • the MR element has a laminated film structure in which a ferromagnetic thin film is laminated via a nonmagnetic metal layer made of Cu, and the film thickness is set to be small.
  • the frequency characteristics at the time are improved, and it is possible to reproduce to a higher frequency with a certain SZN ratio secured.
  • the MR element can be stabilized and the reproduction output by the giant magnetoresistance effect can be greatly increased.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

Tête de lecture magnéto-résistive verticale dans laquelle un élément magnéto-résistif est placé verticalement par rapport à une surface de glissement faisant face à un support d'enregistrement magnétique, et dans laquelle une électrode stratifiée à son extrémité distale est exposée à la surface de glissement. L'élément magnéto-résistif comporte une structure de couche mince stratifiée formée par stratification d'une paire de couches minces ferro-magnétiques à travers une couche de métal amagnétique. La couche de métal amagnétique est constituée de Cu, et présente une épaisseur inférieure à 10 nm. La couche mince ferro-magnétique est consituée d'un alliage Ni-Fe, Ni-Fe-Co, etc. et présente de préférence une épaisseur inférieure à 10 nm. L'élément magnéto-résistif est pris en sandwich entre une paire de substances faisant écran au magnétisme.
PCT/JP1994/000296 1993-02-25 1994-02-24 Tete de lecture magneto-resistive Ceased WO1994019794A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6117493A JPH06251336A (ja) 1993-02-25 1993-02-25 磁気抵抗効果型磁気ヘッド
JP5/61174 1993-02-25

Publications (1)

Publication Number Publication Date
WO1994019794A1 true WO1994019794A1 (fr) 1994-09-01

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JP (1) JPH06251336A (fr)
WO (1) WO1994019794A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424890A (en) * 1990-02-05 1995-06-13 Sony Corporation Magnetoresistance effect type thin film head

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01116915A (ja) * 1987-10-29 1989-05-09 Sony Corp 磁気抵抗効果型磁気ヘッド
JPH02165408A (ja) * 1988-12-19 1990-06-26 Sony Corp 磁気抵抗効果型磁気ヘッド
JPH02226509A (ja) * 1989-02-23 1990-09-10 Nec Corp 磁気抵抗効果ヘツド

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01116915A (ja) * 1987-10-29 1989-05-09 Sony Corp 磁気抵抗効果型磁気ヘッド
JPH02165408A (ja) * 1988-12-19 1990-06-26 Sony Corp 磁気抵抗効果型磁気ヘッド
JPH02226509A (ja) * 1989-02-23 1990-09-10 Nec Corp 磁気抵抗効果ヘツド

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424890A (en) * 1990-02-05 1995-06-13 Sony Corporation Magnetoresistance effect type thin film head

Also Published As

Publication number Publication date
JPH06251336A (ja) 1994-09-09

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