WO1995018080A1 - Corps fritte a l'oxyde d'etain dope a l'indium, couche mince conductrice transparente d'oxyde d'etain dope a l'indium et son procede de formation - Google Patents

Corps fritte a l'oxyde d'etain dope a l'indium, couche mince conductrice transparente d'oxyde d'etain dope a l'indium et son procede de formation Download PDF

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Publication number
WO1995018080A1
WO1995018080A1 PCT/JP1994/002214 JP9402214W WO9518080A1 WO 1995018080 A1 WO1995018080 A1 WO 1995018080A1 JP 9402214 W JP9402214 W JP 9402214W WO 9518080 A1 WO9518080 A1 WO 9518080A1
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Prior art keywords
conductive film
sintered body
transparent conductive
ito
composition
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Ceased
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PCT/JP1994/002214
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English (en)
Japanese (ja)
Inventor
Akihiko Shirakawa
Hirozumi Izawa
Takao Noda
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Resonac Holdings Corp
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Showa Denko KK
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Priority to KR1019950703610A priority Critical patent/KR100203671B1/ko
Publication of WO1995018080A1 publication Critical patent/WO1995018080A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products

Definitions

  • ITO sintered body ITO transparent conductive film and method of forming the film
  • the present invention relates to an ITO sintered body useful as a sputtering target material used for forming a transparent conductive film, an ITO transparent conductive film obtained from the sintered body, and a method for forming such a transparent conductive film. .
  • the ITO sintered body of the present invention has a high sintered body density, and a transparent conductive film having a small specific resistance can be obtained from the sintered body.
  • This transparent conductive film is particularly suitable for use as a transparent electrode in liquid crystal displays, electroluminescence, and electrochromic displays. Background technology
  • a film formed by forming a metal such as gold or platinum or an oxide such as tin oxide or indium oxide on a substrate is known.
  • the one used for liquid crystal displays and the like is the mainstream of ITO (Indium—TinOxide), in which tin oxide is added to indium oxide.
  • ITO Indium—TinOxide
  • the method for forming the transparent conductive film include physical vapor deposition methods such as vacuum deposition, ion plating, and sputtering, chemical vapor deposition methods for forming a film by a chemical reaction such as thermal decomposition, and coating methods using sprayers and tips.
  • the physical vapor deposition method in particular, the sputtering method, is the mainstream because the denseness of the film is good and a low resistance film can be easily obtained.
  • an ITO sintered body obtained by adding tin oxide to indium oxide is often used as a sputtering target.
  • the ITO sintered body is usually formed by molding powder obtained by adding tin oxide to indium oxide or calcined powder by cold breathing, embedding, etc.
  • ITO powder has poor sinterability, and this method has a high density of 4.9 g / cm3 (relative density of 70 g when the theoretical density is 7.0 gcm3). %) Of the sintered body was obtained.
  • examples of the technology for lowering the resistance of an ITO transparent conductive film by a semiconductor conversion mechanism based on valence control include the following.
  • JP-A-59-163707 ruthenium oxide, lead oxide, and copper oxide are added to ITO, and in JP-A-59-71205, acid is added to ITO, and
  • JP-A-63-78404 indium oxide and aluminum fluoride for ITO, JP-A-63-178414, and TEO oxide for ITO and JP-A-64-10507, respectively.
  • TEO oxide for ITO and JP-A-64-10507, respectively.
  • selenium oxide or tin fluoride is used as the ITO.
  • I and Br are respectively added to I T0 to reduce the resistance of the transparent conductive film.
  • US Pat. No. 4,399,194 discloses an example of lowering the resistance of a transparent conductive film by making a semiconductor based on reduction.
  • zirconium oxide is added to indium oxide at 40 to 60 wt% to obtain characteristics of a specific resistance of 4.4 ⁇ 10-4 ⁇ cm and a light transmittance of 80%.
  • the amount of IT0 that can be used for one target of the same size is reduced, the target life is short, and the frequency of target replacement is high.
  • the operating rate of the sputtering apparatus is reduced.
  • the sintering density is lower, the blackening phenomenon of the target surface which occurs during sputtering is more remarkable, and the speed at which the film is formed becomes slower with time, and the specific resistance of the transparent conductive film becomes higher. Therefore, in order to remove the blackened material on the surface, the amount of use of the actual gate is reduced, and the operating rate of the sputtering apparatus is further reduced. Therefore, while increasing the usable amount of ITO per target sheet, the density of the ITO sintered body target is improved in order to improve the operation rate and stable operation of the sputtering equipment. A density exceeding 70% is required.
  • Japanese Patent Application Laid-Open No. 61-136954 Japanese Patent Publication No. 21109/111
  • a sintered body having a maximum relative density of 90% is obtained by adding an oxide of Si and / or Ge as a sintering aid.
  • the inventors of the present invention have performed additional tests and found that the one with the best film characteristics is a composition obtained by adding 0.5 wt% of GeOs to ITO, and the specific resistance of the film is 2.0 ⁇ 10-4 Qcm.
  • the sintered body density was only 79%. When 15 wt% of GeO 2 was added, the sintered body density became 90%, and the specific resistance of the film deteriorated to 2 : 9 ⁇ 10-4 ⁇ cm.
  • Japanese Patent Application Laid-Open No. 59-198602 describes a transparent conductive film in which A1, W, Th, and Mo elements are added to ITO.
  • the film resistance is also 1.2 ⁇ 10 ⁇ 2 to 1.2 ⁇ 10 ⁇ 2. . 42 X 1 0_ 2 Qcm and higher, when the present inventor has additional test, the sintered density is low than 70% relative density to the theoretical density.
  • an object of the present invention is to provide a high-density ITO sintered body having a relative density of 90% or more and capable of obtaining a transparent conductive film having a low specific resistance. Is to do.
  • An object of the present invention is to provide an ITO transparent conductive film that can be manufactured with a high yield with a thin and shortened etching time.
  • S i O 2 -B is O 3 shown in FIG. 1 corresponds to a region surrounded by points A, B, C, D and E indicating the following composition in the two-component diagram. providing 2 and B ⁇ 2 0 3 I tO sintered body containing composition.
  • the present invention provides, in another one aspect, provides an I TO transparent conductive film that have a the S i 0 2 and B 12 0 3 composition.
  • the invention in still another aspect, from the I TO sintered body was used as a data Ge' bets, inert gas alone or an inert gas into the vacuum chamber and 02 gas and H ⁇ gas having the above composition Introduce a mixture of at least one selected gas so that the total pressure becomes 1 X 10-3 t0 rr ⁇ 5 Xl 0-2 torr, and sputtering And a method for forming an ITO transparent conductive film.
  • tin exists as a mixture or solid solution of indium oxide with respect to indium oxide.
  • Bi and Si are also used.
  • Each is mixed as an oxide, but seems to exist as a composite oxide, as a solid solution, or in a mixed state thereof. Since the state is difficult to identify accurately, in the present invention, the composition is indicated as each oxide for convenience.
  • Sintered body and transparent conductive film of the present invention S i 0 2 shown in Figure 1 - B i 2 0 3 two-component point indicating the composition of A, B, C, realm surrounded by D and E transparent conductive film c satisfying this requirement is characterized by having a S i 0 2 and B i 2 0 3 composition corresponding to have the following specific resistance value of about 2. 0X10- 4 ⁇ cm to.
  • the sintered body and the transparent conductive film are regions surrounded by points F, G, H, and I in the binary system of S i 0 2 -B i ⁇ 0 3 shown in FIG. 1, and more preferably the following compositions having S i 0 2 and B 12 0 3 composition corresponding respectively J, K, in a region surrounded by L and ⁇ point indicating the.
  • the transparent conductive film Has a specific resistance of 1.5 ⁇ 10 ⁇ 4 ⁇ cm or less and 1.0 ⁇ 10 ⁇ cm or less, respectively.
  • the ITO sintered body and the transparent conductive film of the present invention contain 0.05 to 25 wt% of tin oxide. It is not preferable that the amount of tin oxide is less than 0.05 wt% or more than 25 wt%, since the specific resistance of the transparent conductive film formed thereby becomes large. That is, the sintered body and transparent conductive film of the present invention include the acid tin amount in the range described above, it is preferable to further include a B 12 0 3 and S i 0 2 in the composition range described above.
  • an oxide of In is generally used as a starting material of indium oxide, but In metal, hydroxide, fluoride, sulfate, nitrate, and the like may be used.
  • a raw material other than an oxide it is calcined or fired in an oxidizing atmosphere to obtain an oxide-based sintered body.
  • the starting material of tin oxide is generally an oxide, but Sn metal, hydroxide, fluoride, sulfide, sulfate, nitrate and the like may be used.
  • S n is finally made of an oxide like I n.
  • the starting material of bismuth oxide is generally an oxide, but Bi metal, hydroxide, iodide, sulfide, sulfate, nitrate and the like may be used.
  • a raw material other than the oxide of B i is used, sintering starts at the time of sintering. Simple substances, chlorides, nitrides, carbides, sulfides, etc. may be used, as well as S i, as well as B i, as long as it is an oxide at the time of sintering 95 (TC.
  • the raw material compounds of these four elements may be mixed at the same time, or compounds of two or more elements may be mixed and calcined in advance, and the calcined powder may be mixed with a compound of another element. Mortar mixing, ball mill mixing, etc. are used for mixing the raw materials.
  • the raw material powder is preferably set to 2 zm or less. If mixed powder is calcined is carried out at 400 ⁇ 150 O e C.
  • the resulting powder contains polyvinyl alcohol (PVA), polyvinyl butyral
  • a binder such as (PVB)
  • granulate to 1 to 50 m with a spray drier, etc., and mold at a pressure of about 500 to 8000 kgZcm2.
  • it may be formed into a slurry together with a binder such as PVA and then subjected to injection molding.
  • the molded body may be dried and degreased in some cases.
  • Sintering of the obtained compact is performed at 1200 to 1600 ° C.
  • the sintering can be performed sufficiently in the atmosphere, but it is possible to perform sintering by hot pressing, HIP, or atmosphere adjustment.
  • a sputtering method and an electron beam evaporation method are employed, but in addition, an ion plating method, a chemical vapor deposition method, and a coating method are also used.
  • a method suitable for a raw material for forming each film is selected.
  • a sintered body of indium and an oxide of an additive element or an alloy thereof is used as a vapor deposition material (target).
  • the sintered body and the substrate on which the film is to be formed are set as an overnight get, and a vacuum is drawn to 1 X 10-5 torr or less. after, if the sintered body or only an inert gas, or mixed gas comprising an inert gas and 0 2 gas or H 2 gas, a mixed gas comprising an inert gas and 02 gas and H 2 gas Introduce and form a film.
  • argon and neon are preferable in view of the function as an inert gas and economical efficiency, and argon is particularly preferable.
  • nitrogen is not preferred because it generates a small amount of nitrogen compounds in the sputtering or vapor deposition process.
  • a vacuum chamber Within, a mixed gas consisting of an inert gas or inert gas and 02 gas and / or ⁇ 2 gas introduced, the total pressure of 1 X 1 0- 3 t 0 rr ⁇ 5 X 1 02 torr To be introduced.
  • the transmittance increases when the O 2 partial pressure in the sputtering gas increases, and the resistance decreases.
  • the force decreases excessively, the resistance increases.
  • 0 2 than the same function as 02 gas oxygen mixed sputtering gas in also oxides but the inert gas as a sputtering gas, such as A r without adding gas, film properties such as resistance much Does not worsen.
  • force Sina force, et al., It is advantageous better certain ratio or more of 0 2 gas is present, therefore, Oite the conductive film forming method of the present invention, the 02 gas at a rate of 2 Ppm ⁇ 2 0% It is preferable to include it in the sputter ring mixed gas.
  • the resistance can be reduced without introducing H 2
  • the resistance can be reduced without impairing the light transmittance of the film when H 2 is introduced.
  • H 2 partial pressure exceeds 1 X 1 0- 3 torr
  • the light transmittance decreases. Therefore, in the conductive film forming method of the present invention, it is preferable that the H 2 gas is contained in the sputtering mixed gas at a ratio of 2 ppm to 20%.
  • Total pressure of the sputtering gas is 1 X 1 0 - without generating stable plasma at 3 t 0 rr less than a low pressure, and in a high pressure exceeding 5 X 1 0 - ⁇ torr deteriorate the resistance of the film.
  • the film is formed at a substrate temperature of 150 to 500 ° C. and a target input power of 0.5 to 4 W / cm 2.
  • the input power refers to the power per 1 cm 2 of the gate per night, and is used to turn the sputtering gas into plasma and accelerate the ions constituting the plasma. If the substrate temperature is lower than 150, the resistance value is inferior, and if the substrate temperature exceeds 50 (TC, the substrate will be deformed, making it unusable. If the input power is lower than 0.5 WZc, the deposition rate will be low, and the production efficiency will be low. On the other hand, if it exceeds 4 WZ cm ⁇ , the resistance value becomes poor.
  • the film formation speed is determined by the total pressure of the sputtering gas, the distance between the substrates, and the like, in addition to the input power. In consideration of the above, it is preferable to select a sputtering condition in which the light transmittance of the film is 90% or more, the highest possible value and the lowest resistance value are obtained.
  • a film can be formed by a vacuum deposition method or an ion plating method as a physical vapor deposition (PVD) method other than the sputtering method. In this case, the same sintered body as in the sputtering method can be used as a raw material.
  • the sputtering method can be formed by an electron beam evaporation method.
  • an inert gas such as A r does not introduce 0 2 gas Sunomi or to introduce the gas 0 2 gas and ⁇ gas
  • to the substrate heating is the same as sputtering, vapor deposition
  • the speed is determined by the electron beam voltage, current, and beam diameter.
  • the first ultimate vacuum is less 10- 5 torr, subsequent 0 2 gas partial pressure 0. 1 X 10-4 ⁇ 5 X 10-4 torr, H 2 gas partial pressure 0. 1 X 10- 5 ⁇ 5 X 10-5 t 0 rr, substrate temperature 200 ⁇ 400.
  • C a deposition rate of 0.5 ⁇ 10 angstroms sec is an appropriate condition.
  • a transparent conductive film can be formed by a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • trimethoxyindium, tetraisopropoxytin, tetraethoxysilane, triisopropoxybismuth, or the like can be used as a raw material.
  • a transparent conductive film can be formed by a coating method. That is,
  • coating and film formation can also be performed by a sol-gel method or a thermal decomposition method of an aqueous solution.
  • a substrate on which a film is to be formed a glass or plastic sheet or film, or a substrate on which a protective film or a functional film is applied is used.
  • the specific S i 0 2 to ITO - by combining the B ia 0 3 composition, density of the sintered body relative density of more than 90% is obtained, further By performing sputtering using this sintered body as a target, an ITO conductive film having a very low specific resistance value and a large visible light transmittance can be industrially advantageously obtained.
  • the specific S i 0 2 ⁇ 1 2 Os composition is critical, for example, when Bi 2 0 3 is not added (Comparative Examples 10 to 13: relative density of sintered body 72 to 8) . 8, electrostatic Shirubemaku resistivity 2. 0 ⁇ 2 3 X 1 0 - 4 ⁇ cm) as compared with the case where B i 2 0 3 is contained a predetermined amount (example 2 1-2 4 sintered body Relative densities of 95 to 93 and conductive film resistivity of 1.2 to 1.3) are high in sintered body density and considerably low.
  • a sintered body, a transparent conductive film, and a method for forming the film of the present invention will be specifically described with reference to Examples and Comparative Examples.
  • Tables 1 to 3 show the mixing amount of bismuth oxide and silicon oxide in% by weight, with the balance being ITO. Mixing was performed with a ball mill. For each of these mixed powders, 0.05 1%? The solution was added to make a slurry having a solid content of 20%, and this slurry was spray-dried with a spray dryer to obtain granules having an average particle size of 20 / m.
  • the granules were uniaxially pressed at 1 to nZcm 2 to obtain a disc-shaped compact having a diameter of 90 mm ⁇ and a thickness of 3.5 mm.
  • Tables 1 to 3 show the composition (chemical analysis) and relative density of the sintered body.
  • Example 5 1 0.02 1.02 0.011, 93 90 1.30
  • Example 14 0.075 1.5 0.075 0.82 93 90 0.58 Difficult example • 0.1 1.5 0.11 0.81 93 90 0.68
  • Example 16 0.5 1.5 0.49 0.81 .94 90 0.72 Difficult 17 1 1.5 0.99 0.84 95 90 0.82 Difficult 18 2 1.5 2.02 0.79 97 90 0.96
  • Example 19 1.5 3.97 0.83 96 90 1.22 Plow example 20 6 1.5 6.00 0.82 94 90 1.45
  • Example 3 0 1.5 0 0.82 72 90 5.13 ⁇ Example 4 0 3 0 1.66 76
  • Samples were prepared by using the same raw material powders as in Example 1 and changing the amount of tin oxide.
  • the amounts of indium oxide and tin oxide mixed were as shown in Table 4, calcined under the same conditions as in Example 1, and bound with ITO powder.
  • Each of the ITO powders was further mixed at a ratio of 0.1 lwt% of gay oxide and 1.5 wt% of bismuth oxide.
  • Other conditions were the same as in Example 1 to obtain a sintered body, and a transparent conductive film was produced.
  • Table 4 shows the composition, density and film characteristics of the sintered body.
  • Example 5 The same conditions as in Example 1 were used, except that the target obtained in Example 14 was used as a sputtering gas, and a mixed gas composed of 02 gas, H 2 gas, and the balance of Ar gas was used as shown in Tables 5 and 6. Produced a transparent conductive film. Table 5'6 shows the film characteristics. [Table 5]
  • Example 67 20ppm 20ppm 5 xio- * L0XI0 1.0X10 '90 0.67
  • Example 68 uppni ouppm 5 XIO" 1 90 0.62
  • Example 69 20ppm 0.2% 5 XIO "* l.oxio- 7 1.0X10" ⁇ 90 0.91
  • Example 70 20 ppm 2% 5X10 "1.0X10-, l.OXlO” 5 90 1.3
  • Example 71 20ppm 20% 5 XIO "* LOXIO” 7 1.0X10 "90 1.5 e.g. 28 20ppm 50% 5 10- * l.OXlO" 7 2.5 X10 " 4 90 2.3
  • Example 86 20% 0 5 X10- * l.oxio -4 0 90 1.6 Optional 20% 2ppm 5 X10- * l.oxio -4 l.oxio- '90 1.1
  • Example 88 20% 20ppm 5 ⁇ 10- » l.oxio -4 1.0X10 -7 90 0.91 Difficult 89 89% 60ppm 5 X10- * 1.0X10 -4 3.OX 10 17 90 0.87
  • Departure 90 20% 0.2% 5 X10- '1.0 10 " 4 1.0X10 "90 1.2 Hanarerei 91 2096 296 5 ⁇ 10-» l.oxio- 4 l.
  • the transparent conductive film of the present invention is particularly suitable for use in a transparent electrode of a liquid crystal disc display, electroluminescence, and electoric display.

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Abstract

L'invention concerne un corps fritté à l'oxyde d'étain dopé à l'indium contenant une composition SiO2 et BiO3 correspondant à une région délimitée par les lignes reliant les points A, B, C, D, et E, dans un matériau à deux composants SiO2-BiO3, conformément à la figure, ainsi qu'une couche mince conductrice transparente d'oxyde d'étain dopé à l'indium contenant un additif de même composition. On forme avantageusement cette couche conductrice transparente par une opération de pulvérisation cathodique dans un gaz inerte seul ou un mélange de gaz inerte, d'O2 et/ou de H2, le corps fritté servant de cible. La densité de ce corps fritté est d'au moins 90 %, et la couche mince conductrice transparente constituée dudit corps fritté présente une valeur de résistance spécifique de moins de 2x10-4 Φcm ainsi qu'une transmission élevée de la lumière.
PCT/JP1994/002214 1993-12-28 1994-12-26 Corps fritte a l'oxyde d'etain dope a l'indium, couche mince conductrice transparente d'oxyde d'etain dope a l'indium et son procede de formation Ceased WO1995018080A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950703610A KR100203671B1 (ko) 1993-12-28 1994-12-26 아이티오 소결체,아이티오 투명전도막 및 그 막의 형성방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5/349165 1993-12-28
JP5349165A JPH07196365A (ja) 1993-12-28 1993-12-28 Ｉｔｏ焼結体ならびにｉｔｏ透明電導膜およびその膜の形成方法

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WO1995018080A1 true WO1995018080A1 (fr) 1995-07-06

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JP (1) JPH07196365A (fr)
KR (1) KR100203671B1 (fr)
CN (1) CN1119851A (fr)
TW (1) TW438996B (fr)
WO (1) WO1995018080A1 (fr)

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JP4570152B2 (ja) * 2005-06-01 2010-10-27 国立大学法人電気通信大学 透明導電性成形物及びその製造方法
CN102066025A (zh) * 2008-08-28 2011-05-18 Jx日矿日石金属株式会社 包含贵金属粉末和氧化物粉末的混合粉末的制造方法及包含贵金属粉末和氧化物粉末的混合粉末
JP5855948B2 (ja) * 2012-01-12 2016-02-09 ジオマテック株式会社 透明導電膜，透明導電膜付き基板，ｉｐｓ液晶セル，静電容量型タッチパネル及び透明導電膜付き基板の製造方法
CN103243298A (zh) * 2012-02-10 2013-08-14 海洋王照明科技股份有限公司 卤素掺杂ito导电膜及其制备方法
CN104882191A (zh) * 2014-02-27 2015-09-02 南昌欧菲光科技有限公司 透明导电膜及电子设备
CN104802284B (zh) * 2015-03-31 2017-08-15 中国船舶重工集团公司第七二五研究所 一种制备大规格ito坯体的方法
CN107130217B (zh) * 2017-06-01 2019-02-19 安徽拓吉泰新型陶瓷科技有限公司 一种低成本、高密度ito靶材的制备方法
CN109802016B (zh) * 2019-01-11 2020-10-02 芜湖德豪润达光电科技有限公司 透明导电层制备方法、发光二极管及其制备方法
KR102620041B1 (ko) * 2021-12-28 2024-01-02 미쓰이금속광업주식회사 산화물 소결체 및 그 제조 방법, 그리고 스퍼터링 타겟재
WO2023127195A1 (fr) * 2021-12-28 2023-07-06 三井金属鉱業株式会社 Corps fritté d'oxyde, son procédé de production, et matériau cible de pulvérisation
TWI813161B (zh) * 2022-01-28 2023-08-21 光洋應用材料科技股份有限公司 銦錫氧化物薄膜、其製法及包含其的光吸收元件

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JPS6065760A (ja) * 1983-09-21 1985-04-15 東ソー株式会社 高電気伝導性酸化錫薄膜材料の製造法
JPS61136954A (ja) * 1984-12-06 1986-06-24 三井金属鉱業株式会社 焼結性に優れた酸化インジウム系焼結体
JPH02225366A (ja) * 1989-02-28 1990-09-07 Tosoh Corp 酸化物焼結体の製造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS6065760A (ja) * 1983-09-21 1985-04-15 東ソー株式会社 高電気伝導性酸化錫薄膜材料の製造法
JPS61136954A (ja) * 1984-12-06 1986-06-24 三井金属鉱業株式会社 焼結性に優れた酸化インジウム系焼結体
JPH02225366A (ja) * 1989-02-28 1990-09-07 Tosoh Corp 酸化物焼結体の製造方法

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TW438996B (en) 2001-06-07
CN1119851A (zh) 1996-04-03
JPH07196365A (ja) 1995-08-01
KR960700977A (ko) 1996-02-24
KR100203671B1 (ko) 1999-06-15

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