WO2002011199A3 - Nachführschaltung - Google Patents

Nachführschaltung Download PDF

Info

Publication number
WO2002011199A3
WO2002011199A3 PCT/EP2001/008669 EP0108669W WO0211199A3 WO 2002011199 A3 WO2002011199 A3 WO 2002011199A3 EP 0108669 W EP0108669 W EP 0108669W WO 0211199 A3 WO0211199 A3 WO 0211199A3
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
isolation well
compensation circuit
integrated transistor
voltage potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2001/008669
Other languages
English (en)
French (fr)
Other versions
WO2002011199A2 (de
Inventor
Thomas Ferianz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to JP2002516825A priority Critical patent/JP4037752B2/ja
Priority to EP01969527A priority patent/EP1305826A2/de
Publication of WO2002011199A2 publication Critical patent/WO2002011199A2/de
Publication of WO2002011199A3 publication Critical patent/WO2002011199A3/de
Priority to US10/353,600 priority patent/US6800926B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

Nachführschaltung zur Nachführung des Spannungspotentials einer Isolationswanne zur Isolation eines in der Isolationswanne eingebetteten integrierten Transistors (1), wobei das Spannungspotential der Isolationswanne in Abhängigkeit von einer von dem integrierten Transistor (1) abgegebenen Signalspannung derart nachgeführt wird, dass die Spannungsdifferenz zwischen der abgegebenen Signalspannung und dem nachgeführten Spannungspotential niedriger ist als eine vorgegebenen Durchbruchspannung (UDA) zwischen dem integrierten Transistor (1) und der Isolationswanne.
PCT/EP2001/008669 2000-08-01 2001-07-26 Nachführschaltung Ceased WO2002011199A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002516825A JP4037752B2 (ja) 2000-08-01 2001-07-26 追尾回路
EP01969527A EP1305826A2 (de) 2000-08-01 2001-07-26 Nachführschaltung
US10/353,600 US6800926B2 (en) 2000-08-01 2003-01-28 Tracking circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10037452.2 2000-08-01
DE10037452A DE10037452B4 (de) 2000-08-01 2000-08-01 Nachführschaltung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/353,600 Continuation US6800926B2 (en) 2000-08-01 2003-01-28 Tracking circuit

Publications (2)

Publication Number Publication Date
WO2002011199A2 WO2002011199A2 (de) 2002-02-07
WO2002011199A3 true WO2002011199A3 (de) 2002-06-27

Family

ID=7650950

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/008669 Ceased WO2002011199A2 (de) 2000-08-01 2001-07-26 Nachführschaltung

Country Status (5)

Country Link
US (1) US6800926B2 (de)
EP (1) EP1305826A2 (de)
JP (1) JP4037752B2 (de)
DE (1) DE10037452B4 (de)
WO (1) WO2002011199A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313948B4 (de) * 2003-03-27 2010-07-29 Infineon Technologies Ag Schaltung mit einem Hallelement, Verfahren zum Betreiben derselben und Verfahren zum Herstellen derselben
US20080128762A1 (en) * 2006-10-31 2008-06-05 Vora Madhukar B Junction isolated poly-silicon gate JFET
WO2016180756A1 (de) * 2015-05-11 2016-11-17 Robert Bosch Gmbh Kontaktviakette als korrosionsdetektor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149046A (ja) * 1983-02-15 1984-08-25 Matsushita Electric Ind Co Ltd モノリシツクプレナ−プロセス集積回路
EP0314226A2 (de) * 1987-10-30 1989-05-03 STMicroelectronics S.r.l. Integrierte Struktur mit aktiven und passiven Komponenten in isolierten Wannen, die mit höheren als die Durchbruchsspannung zwischen jeder Komponente und der entsprechenden Wanne betrieben werden
EP0449093A1 (de) * 1990-03-29 1991-10-02 STMicroelectronics S.r.l. Schaltungsanordnung zur Verhinderung des Latch-up-Phänomens in vertikalen PNP-Transistoren mit isoliertem Kollektor
EP0556743A1 (de) * 1992-02-17 1993-08-25 STMicroelectronics S.r.l. Vorrichtung mit Substratisolation
EP0742590A2 (de) * 1995-05-11 1996-11-13 Harris Corporation Verfahren und Schaltung zum Verhindern einer Vorwärtsvorspannung einer parasitären Diode in einer integrierten Schaltung
US5578862A (en) * 1992-12-30 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit with layer for isolating elements in substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5039877A (en) * 1990-08-30 1991-08-13 Micron Technology, Inc. Low current substrate bias generator
DE69407471T2 (de) * 1993-04-19 1998-06-18 Koninkl Philips Electronics Nv BiCMOS Gegentaktleistungstreiber mit geringer Phasenverschiebung
DE19518524C2 (de) * 1995-05-19 1997-03-20 Siemens Ag Schaltungsanordnung zur Verringerung einer Minoritätsträgerinjektion in ein Substrat
US5929506A (en) * 1996-12-06 1999-07-27 Texas Instrument Incorporated Isolated vertical PNP transistor and methods for making same in a digital BiCMOS process
US6498521B1 (en) * 2001-11-29 2002-12-24 Lsi Logic Corporation Dynamic supply control for line driver

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149046A (ja) * 1983-02-15 1984-08-25 Matsushita Electric Ind Co Ltd モノリシツクプレナ−プロセス集積回路
EP0314226A2 (de) * 1987-10-30 1989-05-03 STMicroelectronics S.r.l. Integrierte Struktur mit aktiven und passiven Komponenten in isolierten Wannen, die mit höheren als die Durchbruchsspannung zwischen jeder Komponente und der entsprechenden Wanne betrieben werden
EP0449093A1 (de) * 1990-03-29 1991-10-02 STMicroelectronics S.r.l. Schaltungsanordnung zur Verhinderung des Latch-up-Phänomens in vertikalen PNP-Transistoren mit isoliertem Kollektor
EP0556743A1 (de) * 1992-02-17 1993-08-25 STMicroelectronics S.r.l. Vorrichtung mit Substratisolation
US5578862A (en) * 1992-12-30 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit with layer for isolating elements in substrate
EP0742590A2 (de) * 1995-05-11 1996-11-13 Harris Corporation Verfahren und Schaltung zum Verhindern einer Vorwärtsvorspannung einer parasitären Diode in einer integrierten Schaltung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 008, no. 281 (E - 286) 21 December 1984 (1984-12-21) *

Also Published As

Publication number Publication date
JP2004505465A (ja) 2004-02-19
JP4037752B2 (ja) 2008-01-23
US20030183851A1 (en) 2003-10-02
DE10037452B4 (de) 2006-07-27
WO2002011199A2 (de) 2002-02-07
DE10037452A1 (de) 2002-02-21
EP1305826A2 (de) 2003-05-02
US6800926B2 (en) 2004-10-05

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