WO2003036657A1 - Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element - Google Patents

Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element

Info

Publication number
WO2003036657A1
WO2003036657A1 PCT/JP2002/010801 JP0210801W WO03036657A1 WO 2003036657 A1 WO2003036657 A1 WO 2003036657A1 JP 0210801 W JP0210801 W JP 0210801W WO 03036657 A1 WO03036657 A1 WO 03036657A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
transparent conductive
oxide film
conductive oxide
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/010801
Other languages
English (en)
French (fr)
Inventor
Kazuo Sato
Naoki Taneda
Makoto Fukawa
Nobutaka Aomine
Mika Kambe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to EP02775364A priority Critical patent/EP1443527A4/en
Priority to JP2003539056A priority patent/JP4389585B2/ja
Publication of WO2003036657A1 publication Critical patent/WO2003036657A1/ja
Priority to US10/826,290 priority patent/US7179527B2/en
Anticipated expiration legal-status Critical
Priority to US11/395,185 priority patent/US7364808B2/en
Priority to US11/951,137 priority patent/US7883789B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24364—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] with transparent or protective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/261—In terms of molecular thickness or light wave length
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Electric Cables (AREA)
PCT/JP2002/010801 2001-10-19 2002-10-17 Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element Ceased WO2003036657A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP02775364A EP1443527A4 (en) 2001-10-19 2002-10-17 SUBSTRATE WITH TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD OF MANUFACTURING THEREOF AND PHOTOELECTRIC IMPLEMENTATION ELEMENT
JP2003539056A JP4389585B2 (ja) 2001-10-19 2002-10-17 透明導電性酸化物膜付き基体および光電変換素子
US10/826,290 US7179527B2 (en) 2001-10-19 2004-04-19 Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US11/395,185 US7364808B2 (en) 2001-10-19 2006-04-03 Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US11/951,137 US7883789B2 (en) 2001-10-19 2007-12-05 Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-322552 2001-10-19
JP2001322552 2001-10-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/826,290 Continuation US7179527B2 (en) 2001-10-19 2004-04-19 Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element

Publications (1)

Publication Number Publication Date
WO2003036657A1 true WO2003036657A1 (en) 2003-05-01

Family

ID=19139587

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/010801 Ceased WO2003036657A1 (en) 2001-10-19 2002-10-17 Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element

Country Status (4)

Country Link
US (3) US7179527B2 (ja)
EP (1) EP1443527A4 (ja)
JP (2) JP4389585B2 (ja)
WO (1) WO2003036657A1 (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005050675A1 (ja) 2003-11-18 2005-06-02 Nippon Sheet Glass Company, Limited 透明導電膜付き透明基体とその製造方法、およびこの基体を含む光電変換素子
WO2005081324A1 (ja) 2004-02-20 2005-09-01 Sharp Kabushiki Kaisha 光電変換装置用基板、光電変換装置、積層型光電変換装置
JP2005347490A (ja) * 2004-06-02 2005-12-15 Asahi Glass Co Ltd 透明導電性酸化物膜付き基体およびその製造方法ならびに光電変換素子
WO2007043408A1 (ja) * 2005-10-07 2007-04-19 Sharp Kabushiki Kaisha 光電変換素子およびこれを用いた太陽電池
JP2007288223A (ja) * 2007-08-06 2007-11-01 Mitsubishi Heavy Ind Ltd 光電変換装置および光電変換装置の製造方法
JP2007288224A (ja) * 2007-08-06 2007-11-01 Mitsubishi Heavy Ind Ltd 光電変換装置および光電変換装置の製造方法
JP2007311825A (ja) * 2007-08-06 2007-11-29 Mitsubishi Heavy Ind Ltd 光電変換装置および光電変換装置の製造方法
WO2008099524A1 (ja) 2007-02-16 2008-08-21 Mitsubishi Heavy Industries, Ltd. 光電変換装置及びその製造方法
JP2009531842A (ja) * 2006-03-30 2009-09-03 ユニヴェルスィテ ドゥ ヌシャテル 起伏のある透明導電層及びその製造方法
WO2010016468A1 (ja) * 2008-08-05 2010-02-11 旭硝子株式会社 透明導電膜基板およびこの基板を用いた太陽電池
WO2011001735A1 (ja) * 2009-07-01 2011-01-06 三菱電機株式会社 薄膜太陽電池およびその製造方法
WO2011013719A1 (ja) * 2009-07-29 2011-02-03 旭硝子株式会社 太陽電池用透明導電性基板および太陽電池
WO2011126074A1 (ja) 2010-04-08 2011-10-13 東ソー株式会社 酸化亜鉛系透明導電膜、その製造方法及び用途
JP2012015419A (ja) * 2010-07-02 2012-01-19 Ulvac Japan Ltd 太陽電池用透明導電性基板の製造方法及び太陽電池用透明導電性基板
US8168544B2 (en) 2006-08-01 2012-05-01 Canon Kabushiki Kaisha Oxide etching method
WO2013008324A1 (ja) * 2011-07-13 2013-01-17 株式会社アルバック 太陽電池用透明導電性基板の製造方法及び太陽電池用透明導電性基板
WO2013046968A1 (ja) * 2011-09-29 2013-04-04 三菱電機株式会社 太陽電池基板とその製造方法、薄膜太陽電池とその製造方法、透明電極付き透光性絶縁基板の製造方法

Families Citing this family (151)

* Cited by examiner, † Cited by third party
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WO2003036657A1 (en) * 2001-10-19 2003-05-01 Asahi Glass Company, Limited Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element
US7259085B2 (en) * 2001-12-03 2007-08-21 Nippon Sheet Glass Company, Limited Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
WO2003054974A1 (en) * 2001-12-13 2003-07-03 Asahi Glass Company, Limited Cover glass for a solar battery
JP2005135942A (ja) * 2003-10-28 2005-05-26 Canon Inc 電極配設方法
JP2005197608A (ja) * 2004-01-09 2005-07-21 Mitsubishi Heavy Ind Ltd 光電変換装置
ATE377580T1 (de) 2004-07-12 2007-11-15 Cardinal Cg Co Wartungsarme beschichtungen
EP1834933A4 (en) * 2004-11-19 2009-04-01 Nippon Sheet Glass Co Ltd PROCESS FOR MANUFACTURING GLASS PLATE WITH THIN FILM
US20060211272A1 (en) * 2005-03-17 2006-09-21 The Regents Of The University Of California Architecture for high efficiency polymer photovoltaic cells using an optical spacer
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
WO2007121215A1 (en) * 2006-04-11 2007-10-25 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
EP1863100A1 (en) * 2006-05-30 2007-12-05 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Method for the production of thin substrates
US20070256732A1 (en) * 2006-05-02 2007-11-08 Ming-Hsien Shen Photovoltaic module
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
JP5000937B2 (ja) * 2006-06-30 2012-08-15 三菱電機株式会社 半導体デバイスの製造方法
US7955889B1 (en) * 2006-07-11 2011-06-07 The Trustees Of Princeton University Organic photosensitive cells grown on rough electrode with nano-scale morphology control
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
EP2381745A1 (fr) * 2006-09-07 2011-10-26 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique
US7854853B2 (en) * 2006-11-09 2010-12-21 Postech Academy-Industry Foundation Nano fabrication method for glass
CN102941711B (zh) * 2006-11-17 2016-08-24 法国圣-戈班玻璃公司 用于有机发光装置的电极、其酸蚀刻以及包括它的有机发光装置
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US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
KR100843386B1 (ko) * 2007-04-12 2008-07-03 비오이 하이디스 테크놀로지 주식회사 액정표시장치의 제조방법
FR2915834B1 (fr) * 2007-05-04 2009-12-18 Saint Gobain Substrat transparent muni d'une couche electrode perfectionnee
US20080300918A1 (en) * 2007-05-29 2008-12-04 Commercenet Consortium, Inc. System and method for facilitating hospital scheduling and support
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
JP4852497B2 (ja) * 2007-08-27 2012-01-11 富士フイルム株式会社 固体撮像素子
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US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) * 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
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FR2924274B1 (fr) * 2007-11-22 2012-11-30 Saint Gobain Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication
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US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
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US7179527B2 (en) 2007-02-20
US7364808B2 (en) 2008-04-29
US20080152868A1 (en) 2008-06-26
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US20060169317A1 (en) 2006-08-03
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