WO2004013374A2 - Dispositif et procede d'enduction de substrats - Google Patents

Dispositif et procede d'enduction de substrats Download PDF

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Publication number
WO2004013374A2
WO2004013374A2 PCT/EP2003/008001 EP0308001W WO2004013374A2 WO 2004013374 A2 WO2004013374 A2 WO 2004013374A2 EP 0308001 W EP0308001 W EP 0308001W WO 2004013374 A2 WO2004013374 A2 WO 2004013374A2
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic field
electrode
maximum value
target
electrode surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2003/008001
Other languages
German (de)
English (en)
Other versions
WO2004013374A3 (fr
Inventor
Peter Frach
Hagen Bartzsch
Klaus Goedicke
Torsten Winkler
Jörn-Steffen LIEBIG
Volker Kirchhoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to JP2004525279A priority Critical patent/JP4457007B2/ja
Priority to AU2003281856A priority patent/AU2003281856A1/en
Publication of WO2004013374A2 publication Critical patent/WO2004013374A2/fr
Publication of WO2004013374A3 publication Critical patent/WO2004013374A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

  • the invention relates to a device and a method for coating substrates by magnetron sputtering, also called cathode sputtering.
  • Magnetron sputtering also called cathode sputtering.
  • Vacuum coating processes using magnetron sputtering are widely used in many industries, such as electrical engineering / electronics, optics, mechanical engineering and the glass industry, for finishing surfaces and for producing certain functions of the surface.
  • the Contacting can prove to be complex and technically unreliable when coating substrates that are typically moved relative to the magnetron source.
  • They generally require even more equipment.
  • the possibilities for influencing the layer properties by charge carrier bombardment are also limited by the associated thermal load on the substrate and possible radiation damage, increased internal stresses or other side effects the layer properties.
  • Specify magnetron sputtering which leads to an improved structure of the deposited layer, for. B. lead to a denser layer, or to better related layer properties, the thermal substrate loading or the effects of high-energy species of the plasma in magnetron sputtering being limited to the layer or the energy input in magnetron sputtering being set within certain limits can.
  • Claim 10 specifies a method for improved magnetron sputtering. A further advantageous embodiment of the method is specified in claim 1 1.
  • the essence of the invention relates to influencing the known magnetron discharge by an additional magnetic field, which changes the flow of electrons from the dense cathode plasma in the vicinity of the target to an electrode connected as an anode.
  • the change in the electron trajectories is obviously associated with a shift in the potential relationships in the coating arrangement.
  • the flow of energetic particles from the plasma to the substrate is determined by the strength and shape of the magnetic field that penetrates the electrode.
  • Layer structure and other layer properties can be influenced by this flow of energy-rich particles.
  • 1 to 3 show devices according to the invention, the essential difference of which is the design of the additional magnetic field penetrating the anode.
  • Fig. 1 Section through an inventive device for magnetron sputtering.
  • the device includes a target 1 with a cooling plate 2, a vacuum flange 3 and a magnetic field generating device 4, which generates a tunnel-shaped magnetron magnetic field 5 penetrating the target, as well as a plasma screen 6, an electrode 7 and a power supply device 8.
  • the power supply device 8 causes that the target is at least partially switched as a cathode and the electrode at least temporarily as an anode.
  • the inventive teaching is implemented by a magnetic field generating device 9 in the vicinity of the electrode. It generates a magnetic field 10 on parts of the surface of the electrode, the maximum value of which is at least 5% of the maximum strength of the magnetic field 5 acting on the target. In many applications, it is advisable to set the magnetic field strength at the electrode much higher.
  • the magnetic field strength in the vicinity of the electrodes can have a value which corresponds to or even exceeds the value of the magnetron field in the vicinity of the target. This leads to shielding of the electrode, which takes place more effectively the greater the field strength of the field component parallel to the electrode surface. This in turn causes an increase in the plasma impedance and thus enables higher particle energies. It is advantageous if a magnetic field generating device is assigned to the electrode in such a way that the electrode surface is at least partially penetrated by a magnetic field, the maximum value of the magnetic field component parallel to the electrode surface H E n , max at least 5% of the maximum value of the magnetic field component parallel to the target surface H ⁇ ⁇ lmax is. It is also advantageous if the magnetic field is at least partially closed in a ring around the electrode.
  • the magnetic field penetrating the electrode is expediently generated by permanent magnets which are arranged to be fixed or movable with respect to the electrode. It can also be expedient to generate this magnetic field electromagnetically. It is particularly advantageous to accommodate a magnetic field generating device inside a hollow electrode.
  • Fig. 2 shows a section through a rotationally symmetrical embodiment with two concentrically arranged targets.
  • An electromagnetic coil is located inside a hollow electrode surrounding the plasma screen 6.
  • this electrode variant is also applicable to other, e.g. B. rectangular designs transferable.
  • the strength of the magnetic field on the electrode surface can be adjusted in the case of electromagnetic excitation by changing the current strength.
  • the magnetic field forms self-contained field lines that do not emerge perpendicularly from the surface of the electrode.
  • Another embodiment includes magnetic field generating means that lead to a vertical exit and / or entry of magnetic field lines on defined predetermined parts of the electrode surface. Among other things, this produces an additional, advantageous cleaning effect for the electrode. Since the position of the exit and / or entry points of field lines on the electrode surface also influences the local potential distribution in the plasma of the magnetron discharge, an embodiment of the invention is advantageous in which the position of the entry and / or exit points of the field lines or is made possible by these exemplary model field relationships.
  • FIG 3 shows a schematic cross section through a device according to the invention for magnetron sputtering, in which permanent magnets are arranged with respect to the electrode in such a way that the magnetic field has an essential component perpendicular to the electrode surface.
  • the invention further comprises a method for magnetron sputtering using the device according to the invention, in which the maximum value of the component of the magnetic field strength acting on the electrode surface and / or the position of the exit points of the magnetic field lines is varied step by step until a desired property of the deposited layer is reached becomes.
  • This can be, for example, the grain size, the hardness, the surface roughness or the electrical resistance of the layer.
  • the method can further include that the maximum value of the magnetic field strength or the position of the pole points of the magnetic field on the Electrode surface are performed according to a predetermined time function. Such a procedure is e.g. B. for the production of layers with a gradient of the layer properties depending on the distance from the substrate surface advantageous.
  • the method can further include that the electrode, which is at least temporarily switched as an anode, can also be temporarily, e.g. B. periodically, to a negative potential with respect to the target area. If necessary, a higher rollover security can be achieved.
  • the device is designed for the deposition of layers of titanium dioxide with a crystalline structure and high hardness.
  • a titanium target 11 of the dimensions 160 x 600 x 10 mm 3 is bonded to a cooling plate 12.
  • a vacuum flange 13 serves as a vacuum and carrier flange.
  • Target and cooling plate are surrounded by a plasma screen 16, which spatially limits the discharge and protects the electrode 17 against direct coating.
  • a plasma screen 16 Below this self-contained, rectangular-shaped electrode and at a free distance of 5 mm there is an uninterrupted row of permanent magnets 19 with holding elements, not shown here. These generate a magnetic field 20.
  • the field lines enter or exit the surface of the electrode 17.
  • the component of the magnetic field H E , rr ⁇ ax) parallel to the surface of the electrode is fixed at 20 kA / m by the position and strength of the permanent magnets.
  • the power supply unit 18 generates a direct current pulsating at a frequency of 30 kHz in order to maintain the magnetron discharge. With the exception of the pulse pauses, the target 11 is connected as the cathode and the electrode 17 as the anode.
  • the coating method with the described device includes a series of preliminary tests with variation of the free distance between the electrode 17 and the permanent magnets 19, as a result of which the suitable value of the magnetic field strength H E ⁇ ma x) was determined.
  • the subsequent series of coatings led to the layer parameters listed in the table, column 1, which corresponded to the objective.
  • those layer parameters are listed in column 2 which are achieved on the surface of the electrode 17 without the magnetic field according to the invention.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif d'enduction de substrats par pulvérisation magnétron. Ce dispositif comprend au moins une source de pulvérisation selon le principe du magnétron, au moins une cible (1) pouvant être placée sur un potentiel électrique éventuel, un champ magnétique (5) sous forme de tunnel refermé sur lui-même au-dessus de la surface, lequel champ est au moins temporairement utilisé comme cathode, au moins une électrode au moins temporairement utilisée comme anode (7) et au moins une unité d'alimentation électrique (8) destinée à produire une tension entre la cible ou les cibles et l'électrode ou les électrodes associées, un dispositif de production de champ magnétique (9) étant associé à ladite électrode, de sorte que la surface de cette électrode est au moins partiellement traversée par un champ magnétique. Selon ladite invention, la valeur maximale de la composante du champ magnétique parallèlement à la surface de l'électrode HE II,max est égale à au moins 5 % de la valeur maximale de la composante du champ magnétique parallèlement à la surface de la cible HT II,max.
PCT/EP2003/008001 2002-07-31 2003-07-22 Dispositif et procede d'enduction de substrats Ceased WO2004013374A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004525279A JP4457007B2 (ja) 2002-07-31 2003-07-22 サブストレートに被膜を被覆する装置および方法
AU2003281856A AU2003281856A1 (en) 2002-07-31 2003-07-22 Device and method for coating substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002134859 DE10234859B4 (de) 2002-07-31 2002-07-31 Einrichtung und Verfahren zum Beschichten von Substraten
DE10234859.6 2002-07-31

Publications (2)

Publication Number Publication Date
WO2004013374A2 true WO2004013374A2 (fr) 2004-02-12
WO2004013374A3 WO2004013374A3 (fr) 2004-12-09

Family

ID=30128547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/008001 Ceased WO2004013374A2 (fr) 2002-07-31 2003-07-22 Dispositif et procede d'enduction de substrats

Country Status (4)

Country Link
JP (1) JP4457007B2 (fr)
AU (1) AU2003281856A1 (fr)
DE (1) DE10234859B4 (fr)
WO (1) WO2004013374A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007054731A1 (de) * 2007-11-14 2009-05-20 Carl Zeiss Smt Ag Optisches Element zur Reflexion von UV-Strahlung, Herstellungsverfahren dafür und Projektionsbelichtungsanlage damit
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
CH668565A5 (de) * 1986-06-23 1989-01-13 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
EP0404973A1 (fr) * 1989-06-27 1991-01-02 Hauzer Holding B.V. Procédé et appareillage pour le revêtement de substrats
DE4009151A1 (de) * 1990-03-22 1991-09-26 Leybold Ag Vorrichtung zum beschichten von substraten durch katodenzerstaeubung
DE4345403C2 (de) * 1993-05-06 1997-11-20 Leybold Ag Vorrichtung zur Kathodenzerstäubung
DE4412906C1 (de) * 1994-04-14 1995-07-13 Fraunhofer Ges Forschung Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung
AU2001223384A1 (en) * 2000-02-23 2001-09-03 Unaxis Balzers Aktiengesellschaft Method for controlling plasma density or the distribution thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007054731A1 (de) * 2007-11-14 2009-05-20 Carl Zeiss Smt Ag Optisches Element zur Reflexion von UV-Strahlung, Herstellungsverfahren dafür und Projektionsbelichtungsanlage damit
US8488103B2 (en) 2007-11-14 2013-07-16 Carl Zeiss Smt Gmbh Optical element for reflection of UV radiation, method for manufacturing the same and projection exposure apparatus comprising the same
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche

Also Published As

Publication number Publication date
DE10234859A1 (de) 2004-02-12
JP4457007B2 (ja) 2010-04-28
DE10234859B4 (de) 2007-05-03
AU2003281856A8 (en) 2004-02-23
JP2005534807A (ja) 2005-11-17
AU2003281856A1 (en) 2004-02-23
WO2004013374A3 (fr) 2004-12-09

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