WO2004013374A3 - Dispositif et procede d'enduction de substrats - Google Patents

Dispositif et procede d'enduction de substrats Download PDF

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Publication number
WO2004013374A3
WO2004013374A3 PCT/EP2003/008001 EP0308001W WO2004013374A3 WO 2004013374 A3 WO2004013374 A3 WO 2004013374A3 EP 0308001 W EP0308001 W EP 0308001W WO 2004013374 A3 WO2004013374 A3 WO 2004013374A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
magnetic field
target
max
maximum value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2003/008001
Other languages
German (de)
English (en)
Other versions
WO2004013374A2 (fr
Inventor
Peter Frach
Hagen Bartzsch
Klaus Goedicke
Torsten Winkler
Joern-Steffen Liebig
Volker Kirchhoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to JP2004525279A priority Critical patent/JP4457007B2/ja
Priority to AU2003281856A priority patent/AU2003281856A1/en
Publication of WO2004013374A2 publication Critical patent/WO2004013374A2/fr
Publication of WO2004013374A3 publication Critical patent/WO2004013374A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif d'enduction de substrats par pulvérisation magnétron. Ce dispositif comprend au moins une source de pulvérisation selon le principe du magnétron, au moins une cible (1) pouvant être placée sur un potentiel électrique éventuel, un champ magnétique (5) sous forme de tunnel refermé sur lui-même au-dessus de la surface, lequel champ est au moins temporairement utilisé comme cathode, au moins une électrode au moins temporairement utilisée comme anode (7) et au moins une unité d'alimentation électrique (8) destinée à produire une tension entre la cible ou les cibles et l'électrode ou les électrodes associées, un dispositif de production de champ magnétique (9) étant associé à ladite électrode, de sorte que la surface de cette électrode est au moins partiellement traversée par un champ magnétique. Selon ladite invention, la valeur maximale de la composante du champ magnétique parallèlement à la surface de l'électrode HE II,max est égale à au moins 5 % de la valeur maximale de la composante du champ magnétique parallèlement à la surface de la cible HT II,max.
PCT/EP2003/008001 2002-07-31 2003-07-22 Dispositif et procede d'enduction de substrats Ceased WO2004013374A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004525279A JP4457007B2 (ja) 2002-07-31 2003-07-22 サブストレートに被膜を被覆する装置および方法
AU2003281856A AU2003281856A1 (en) 2002-07-31 2003-07-22 Device and method for coating substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002134859 DE10234859B4 (de) 2002-07-31 2002-07-31 Einrichtung und Verfahren zum Beschichten von Substraten
DE10234859.6 2002-07-31

Publications (2)

Publication Number Publication Date
WO2004013374A2 WO2004013374A2 (fr) 2004-02-12
WO2004013374A3 true WO2004013374A3 (fr) 2004-12-09

Family

ID=30128547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/008001 Ceased WO2004013374A2 (fr) 2002-07-31 2003-07-22 Dispositif et procede d'enduction de substrats

Country Status (4)

Country Link
JP (1) JP4457007B2 (fr)
AU (1) AU2003281856A1 (fr)
DE (1) DE10234859B4 (fr)
WO (1) WO2004013374A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007054731A1 (de) * 2007-11-14 2009-05-20 Carl Zeiss Smt Ag Optisches Element zur Reflexion von UV-Strahlung, Herstellungsverfahren dafür und Projektionsbelichtungsanlage damit
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
DE3706698A1 (de) * 1986-06-23 1988-01-14 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
WO2001063643A1 (fr) * 2000-02-23 2001-08-30 Unaxis Balzers Aktiengesellschaft Procede de regulation de la densite plasmatique ou de sa repartition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404973A1 (fr) * 1989-06-27 1991-01-02 Hauzer Holding B.V. Procédé et appareillage pour le revêtement de substrats
DE4009151A1 (de) * 1990-03-22 1991-09-26 Leybold Ag Vorrichtung zum beschichten von substraten durch katodenzerstaeubung
DE4345403C2 (de) * 1993-05-06 1997-11-20 Leybold Ag Vorrichtung zur Kathodenzerstäubung
DE4412906C1 (de) * 1994-04-14 1995-07-13 Fraunhofer Ges Forschung Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
DE3706698A1 (de) * 1986-06-23 1988-01-14 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
WO2001063643A1 (fr) * 2000-02-23 2001-08-30 Unaxis Balzers Aktiengesellschaft Procede de regulation de la densite plasmatique ou de sa repartition

Also Published As

Publication number Publication date
DE10234859A1 (de) 2004-02-12
JP4457007B2 (ja) 2010-04-28
WO2004013374A2 (fr) 2004-02-12
DE10234859B4 (de) 2007-05-03
AU2003281856A8 (en) 2004-02-23
JP2005534807A (ja) 2005-11-17
AU2003281856A1 (en) 2004-02-23

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