WO2009011333A1 - Cellule solaire cis et procédé de fabrication de la cellule solaire cis - Google Patents

Cellule solaire cis et procédé de fabrication de la cellule solaire cis Download PDF

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Publication number
WO2009011333A1
WO2009011333A1 PCT/JP2008/062695 JP2008062695W WO2009011333A1 WO 2009011333 A1 WO2009011333 A1 WO 2009011333A1 JP 2008062695 W JP2008062695 W JP 2008062695W WO 2009011333 A1 WO2009011333 A1 WO 2009011333A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
alloy substrate
cis solar
alloy
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062695
Other languages
English (en)
Japanese (ja)
Inventor
Morihisa Ota
Taizo Kobayashi
Akihiro Funamoto
Shigeru Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to CN2008800244935A priority Critical patent/CN101743641B/zh
Priority to US12/668,668 priority patent/US8575476B2/en
Priority to ES201090002A priority patent/ES2398885B1/es
Priority to DE112008001828T priority patent/DE112008001828T5/de
Publication of WO2009011333A1 publication Critical patent/WO2009011333A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/04—Wires; Strips; Foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un substrat en alliage (32) formé d'un alliage de Ni et de Mo qui est formé par électroformage. Le substrat en alliage (32) a une composition calibrée avec une composition d'alliage amenée à varier dans la direction de son épaisseur. Dans ce cas, le substrat en alliage (32) du côté de sa surface inférieure est principalement composé de Ni, et le substrat en alliage (32) du côté de sa surface supérieure est principalement composé de Mo. Le substrat en alliage (32) a sur sa surface supérieure un grand nombre de minuscules parties concavoconvexes en forme de pyramide (37), avec un effet de diffusion de lumière élevé. Une couche d'absorption optique CIS (33) est disposée sur la surface supérieure du substrat en alliage (32), et une électrode supérieure (35) est disposée au-dessus de la couche d'absorption optique (33).
PCT/JP2008/062695 2007-07-13 2008-07-14 Cellule solaire cis et procédé de fabrication de la cellule solaire cis Ceased WO2009011333A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008800244935A CN101743641B (zh) 2007-07-13 2008-07-14 Cis系太阳能电池及其制造方法
US12/668,668 US8575476B2 (en) 2007-07-13 2008-07-14 CIS solar cell and method for manufacturing the same
ES201090002A ES2398885B1 (es) 2007-07-13 2008-07-14 Celda solar cis y procedimiento de fabricación de la misma.
DE112008001828T DE112008001828T5 (de) 2007-07-13 2008-07-14 CIS-Solarzelle und Verfahren zu deren Herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184196 2007-07-13
JP2007184196A JP4304638B2 (ja) 2007-07-13 2007-07-13 Ｃｉｓ系太陽電池及びその製造方法

Publications (1)

Publication Number Publication Date
WO2009011333A1 true WO2009011333A1 (fr) 2009-01-22

Family

ID=40259666

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062695 Ceased WO2009011333A1 (fr) 2007-07-13 2008-07-14 Cellule solaire cis et procédé de fabrication de la cellule solaire cis

Country Status (6)

Country Link
US (1) US8575476B2 (fr)
JP (1) JP4304638B2 (fr)
CN (1) CN101743641B (fr)
DE (1) DE112008001828T5 (fr)
ES (1) ES2398885B1 (fr)
WO (1) WO2009011333A1 (fr)

Families Citing this family (36)

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US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
JP5512219B2 (ja) * 2009-10-06 2014-06-04 富士フイルム株式会社 太陽電池
KR101091405B1 (ko) * 2009-10-28 2011-12-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101610382B1 (ko) * 2009-10-30 2016-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP5509962B2 (ja) * 2010-03-19 2014-06-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2013527598A (ja) * 2010-03-24 2013-06-27 サイオニクス、インク． 高められた電磁放射線検出を有するデバイス及び関連方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (fr) 2010-06-18 2011-12-22 Sionyx, Inc Dispositifs photosensibles à grande vitesse et procédés associés
KR101283140B1 (ko) * 2011-01-26 2013-07-05 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
KR101242856B1 (ko) * 2011-06-10 2013-03-12 주식회사 포스코 ＣＩ(Ｇ)Ｓ 태양전지용 Ｆｅ-Ｃｒ합금 기판 및 그 제조방법
KR101259296B1 (ko) 2011-06-13 2013-05-06 주식회사 포스코 태양전지용 Ｆｅ-Ｎｉ합금 기판과 그 제조방법 및 이를 이용한 태양전지
WO2013010127A2 (fr) 2011-07-13 2013-01-17 Sionyx, Inc. Dispositifs de prise d'images biométriques et procédés associés
KR101305802B1 (ko) 2011-07-29 2013-09-06 엘지이노텍 주식회사 태양전지 및 이의 제조방법
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KR101422609B1 (ko) * 2011-11-17 2014-07-24 한국생산기술연구원 텍스처 구조를 갖는 열팽창 제어형 플렉서블 금속 기판재
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KR101271836B1 (ko) 2011-12-27 2013-06-10 주식회사 포스코 오엘이디용의 카본나노튜브층 및 수지층이 구비된 철과 크롬의 합금기판 제조방법
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CN103746018B (zh) * 2014-01-21 2016-04-13 南通大学 一种瓦片状型波纹式太阳能电池硅基片及其制造工艺
HUP1400380A2 (hu) * 2014-08-07 2016-03-29 Ecosolifer Ag Napelem cella elrendezés
US11091848B2 (en) 2017-05-11 2021-08-17 Unison Industries, Llc Component with differing material properties
CN108649080A (zh) * 2018-07-19 2018-10-12 北京铂阳顶荣光伏科技有限公司 一种太阳能电池及其制备方法
CN115863449B (zh) * 2022-11-30 2026-03-20 宸亚(兰考县)科技有限公司 光伏器件
JP7718644B1 (ja) 2024-01-22 2025-08-05 株式会社Pxp 太陽電池モジュール、太陽電池セル及び太陽電池モジュールの製造方法

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JPS6341082A (ja) * 1986-08-07 1988-02-22 Fuji Electric Co Ltd 光起電力装置
JPH02382A (ja) * 1987-12-30 1990-01-05 Tonen Corp 太陽電池用金属基板、その製造方法及びそれを用いた太陽電池
JPH0555611A (ja) * 1991-08-23 1993-03-05 Canon Inc 太陽電池およびその製造方法
JPH05267704A (ja) * 1992-03-17 1993-10-15 Dowa Mining Co Ltd 三元化合物半導体薄膜の製法
JPH0982991A (ja) * 1995-09-12 1997-03-28 Yazaki Corp ＣｕＩｎＳｅ２ 系薄膜太陽電池の製造方法
JPH11135819A (ja) * 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 化合物薄膜太陽電池
JPH11224953A (ja) * 1997-12-02 1999-08-17 Ricoh Co Ltd 光起電力装置及びその製造方法
JP2001345460A (ja) * 2000-03-29 2001-12-14 Sanyo Electric Co Ltd 太陽電池装置

Also Published As

Publication number Publication date
CN101743641B (zh) 2012-01-11
JP2009021479A (ja) 2009-01-29
JP4304638B2 (ja) 2009-07-29
ES2398885A1 (es) 2013-03-22
US20100269906A1 (en) 2010-10-28
DE112008001828T5 (de) 2010-06-10
CN101743641A (zh) 2010-06-16
US8575476B2 (en) 2013-11-05
ES2398885B1 (es) 2013-12-12

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