WO2010143544A1 - Appareil de dépôt par évaporation sous vide - Google Patents

Appareil de dépôt par évaporation sous vide Download PDF

Info

Publication number
WO2010143544A1
WO2010143544A1 PCT/JP2010/059114 JP2010059114W WO2010143544A1 WO 2010143544 A1 WO2010143544 A1 WO 2010143544A1 JP 2010059114 W JP2010059114 W JP 2010059114W WO 2010143544 A1 WO2010143544 A1 WO 2010143544A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
arm
suction nozzle
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/059114
Other languages
English (en)
Japanese (ja)
Inventor
正明 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of WO2010143544A1 publication Critical patent/WO2010143544A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates

Definitions

  • the present invention relates to a vapor phase growth apparatus including a chamber composed of a main body and a lid.
  • Patent Document 1 A vapor phase growth apparatus of a type that employs such a cleaning method is described in Patent Document 1, for example.
  • the vapor phase growth apparatus described in Patent Document 1 includes a dispersion head, and is configured to continuously feed a substrate, which is a film formation target, into the apparatus using a transport belt or the like. When the substrate passes under the dispersion head, a raw material gas is blown to form a thin film.
  • an in-process dust removing mechanism is configured by connecting a vacuum cleaner and an exhaust pipe of a dispersion head with a branch pipe with a control valve. With this configuration, dust adhering to the dispersion head during non-film formation is removed by suction.
  • Patent Document 2 discloses a magnetic disk cleaning device.
  • Japanese public utility model publication Japanese Utility Model Publication No. 63-9214 (published January 21, 1988)
  • Japanese Patent Publication Japanese Patent Laid-Open No. 2-42696 (published on February 13, 1990)”
  • Patent Document 1 has a problem that it cannot be applied as a reaction furnace to a vapor phase growth apparatus including a chamber composed of a main body and a lid.
  • the type of the vapor phase growth apparatus described in Patent Document 1 is mainly intended to remove dust adhering to a dispersion head that is a raw material gas injection port. For this reason, the dispersion head and the vacuum cleaner are connected by a branch pipe to form an integral structure.
  • a vapor phase growth apparatus (hereinafter referred to as a vapor phase growth apparatus with a lid) that includes a chamber composed of a main body and a lid and performs film formation in the chamber, a substrate and a substrate tray (film formation object)
  • a vapor phase growth apparatus with a lid that includes a chamber composed of a main body and a lid and performs film formation in the chamber, a substrate and a substrate tray (film formation object)
  • the following operations must be performed. That is, it is necessary to move the worker's hand or the hand of the automatic transfer robot into the chamber. And for this operation, the lid of the chamber is greatly raised.
  • the present invention has been made in view of the above-described problems, and the object of the present invention is to mount a film-forming object without being affected by the vertical movement of the chamber lid accompanying opening and closing of the chamber in the vapor phase growth apparatus with lid.
  • a vapor phase growth apparatus capable of removing dust on a mounting table and performing maintenance of a removing means for removing dust on a deposition object mounting table without interrupting film forming work in a chamber. It is to provide.
  • a vapor phase growth apparatus includes a chamber composed of a main body and a lid, a film mounting table placed in the chamber, and the film mounting board.
  • a vapor phase growth apparatus provided with a removing means for removing dust on the mounting table, wherein the removing means is provided at an arm extending to the film mounting table and at one end of the arm
  • the removing means is provided at an arm extending to the film mounting table and at one end of the arm
  • the vapor phase growth apparatus of the present invention is a vapor phase growth apparatus with a lid provided with a chamber composed of a main body and a lid.
  • the removal means which removes the dust on a to-be-film-formed object mounting base has the arm extended to the said to-be-film-formed object mounting base, and the suction nozzle provided in one edge part of the said arm.
  • the suction nozzle has a first shaft portion extending in a first direction parallel to the central axis of the chamber outside the chamber, and the arm is rotated using the first shaft portion as a rotation axis.
  • a moving mechanism that moves the chamber from the outside to the inside of the chamber and from the outside to the inside, and is a separate unit from the chamber.
  • the present invention it is possible to remove dust on the deposition object mounting table without being affected by the vertical movement of the lid accompanying opening and closing of the chamber. Furthermore, since it is not necessary to interrupt the film forming operation performed in the chamber for the maintenance of the removing means, it is possible to prevent the apparatus operating rate from being lowered due to the maintenance.
  • FIG. 1 is a side view showing a schematic configuration of a vapor phase growth apparatus according to an embodiment of the present invention. It is a top view which shows schematic structure of the vapor phase growth apparatus of one Embodiment of this invention.
  • FIG. 1 is a side view showing a schematic configuration of the vapor phase growth apparatus of the present embodiment.
  • FIG. 2 is a plan view showing a schematic configuration of the vapor phase growth apparatus of the present embodiment.
  • the vapor phase growth apparatus of the present embodiment (hereinafter referred to as the present vapor phase growth apparatus) includes a chamber 1 as a reaction furnace, a cleaning means (removing means) 2 and a glove box 3. Inside the glove box 3, a chamber 1 and a cleaning means 2 are arranged. Moreover, the inside of the glove box 3 is kept airtight.
  • the chamber 1 is composed of a cylindrical chamber body 4 and a cylindrical chamber lid 6 that closes the chamber body 4.
  • the chamber lid 6 is raised or lowered by the vertical movement mechanism 5 so that the chamber 1 can be opened and closed freely.
  • the vapor phase growth apparatus includes a susceptor 10 accommodated in the chamber body 4 and a rotation mechanism 11 that rotates the susceptor 10.
  • the rotation mechanism 11 rotates the susceptor 10 about the central axis O of the chamber 1 as a rotation axis.
  • a plurality of substrate tray mounting tables (film formation substrate mounting tables) 9 are provided on the surface of the susceptor 10 facing the chamber lid 6. As shown in FIG. 2, the substrate tray mounting table 9 is arranged so as to avoid the central axis O in a plan view, and is rotated together with the susceptor 10 by the rotation mechanism 11.
  • a substrate (film formation target) 7 that is a film formation target of the vapor phase growth apparatus is formed inside the chamber 1 while being placed on a substrate tray 8. Therefore, in order to perform the film forming process on the substrate 7 using this vapor phase growth apparatus, first, the chamber lid 6 is raised by the vertical movement mechanism 5 to open the chamber body 4. Then, after placing the substrate 7 and the substrate tray 8 on the substrate tray mounting table 9, the chamber lid 6 is lowered by the vertical movement mechanism 5 to close the chamber body 4.
  • the inside of the chamber 1 is completely blocked from the outside.
  • the inside of the chamber 1 becomes a high temperature environment by a heater (not shown).
  • a thin film is formed on the substrate 7 by injecting a raw material gas onto the substrate 7 in this high temperature environment.
  • the substrate 7 and the substrate tray 8 are mounted on the substrate tray mounting table 9 and rotated around the central axis O by the rotation mechanism 11.
  • the chamber lid 6 is raised by the vertical movement mechanism 5 and the chamber body 4 is opened. Then, the substrate 7 together with the substrate tray 8 is collected outside the chamber 1 by an automatic transfer robot (not shown) and replaced with a new one.
  • the cleaning means 2 removes dust on the substrate tray mounting table 9 in parallel with the operation of the automatic transfer robot collecting and replacing the substrate 7 and the substrate tray 8.
  • the cleaning means 2 can suck and remove dust on the substrate tray mounting table 9 by using the replacement time of the substrate 7 and the substrate tray 8, it affects the production tact of the substrate 7.
  • the cleaning unit 2 removes dust on the substrate tray mounting table 9 by a mechanism different from the vertical movement mechanism 5 that controls the opening and closing of the chamber 1. Therefore, in this vapor phase growth apparatus, dust on the substrate tray mounting table 9 can be removed without being affected by the vertical movement of the chamber lid 6 that accompanies opening and closing of the chamber 1.
  • it is not necessary to interrupt the film forming operation performed in the chamber 1 for the maintenance of the cleaning means 2 it is possible to prevent a reduction in the apparatus operating rate due to the maintenance.
  • the configuration of the cleaning means 2 will be described in detail.
  • the cleaning means 2 includes a suction nozzle 21 for removing dust on the substrate tray mounting table 9, an arm 22 having the suction nozzle 21 connected to one end, and suction through the arm 22.
  • the nozzle 21 is provided with a moving mechanism 23 that moves the inside of the chamber 1 to the outside and from the outside to the inside (reciprocates between the outside and the inside of the chamber 1).
  • the moving mechanism 23 is provided outside the chamber 1, and moves the suction nozzle 21 by a mechanism independent of the vertical movement mechanism 5.
  • the suction nozzle 21 is moved directly above the substrate tray mounting table 9 inside the chamber 1 by the moving mechanism 23.
  • the suction nozzle 21 is arranged in a non-contact manner with respect to the substrate tray mounting table 9 with respect to the substrate tray mounting table 9.
  • a piping tube 24 for discharging the sucked dust to the outside of the glove box 3 is connected to the suction nozzle 21.
  • the piping tube 24 is connected to a dust filter and a vacuum pump (not shown).
  • the arm 22 has a suction nozzle 21 connected to one end and a moving mechanism 23 connected to the other end.
  • the direction (longitudinal direction) in which the axis of the arm 22 extends is the x-axis direction.
  • the height direction of the chamber 1 is defined as the z-axis direction (first direction).
  • a direction perpendicular to both the x-axis and the z-axis is defined as a y-axis direction (second direction).
  • the z-axis direction can be said to be the normal direction of the substrate 7 as the deposition target or the direction of the central axis O.
  • the moving mechanism 23 moves the suction nozzle 21 by causing the arm 22 to perform two rotational operations, ie, a y-axis rotation and a z-axis rotation.
  • the moving mechanism 23 will be described in detail.
  • the moving mechanism 23 includes a first rotation shaft shaft portion (first shaft portion) 25 extending in the z-axis direction and a second rotation shaft extending in the y-axis direction.
  • a shaft portion (second shaft portion) 26 and a cam mechanism 27 are provided.
  • the first rotating shaft shaft portion 25 is connected to the end portion of the arm 22 opposite to the suction nozzle 21.
  • the arm 22 can rotate in the z-axis with the first rotation shaft shaft portion 25 as the rotation axis, and can be rotated in the y-axis with the second rotation shaft shaft portion 26 as the rotation axis. Then, when the arm 22 rotates in the z-axis, the suction nozzle 21 moves. Further, as the arm 22 rotates in the y-axis, the suction nozzle 21 moves up and down in the z-axis direction.
  • an operation of moving the suction nozzle 21 by the z-axis rotation of the arm 22 is referred to as an operation A
  • an operation of moving the suction nozzle 21 up and down in the z-axis direction by the y-axis rotation of the arm 22 is referred to as an operation B.
  • the operation A and the operation B performed by the moving mechanism 23 will be described in detail below.
  • the first rotating shaft portion 25 includes a shaft body (first shaft body) 25a, a stepping motor (power source) 25b, and a magnetic fluid seal 25c.
  • the stepping motor 25b is installed outside the glove box 3, and is a power source that rotates the shaft body 25a in the z axis.
  • the shaft body 25a connected to the arm 22 is supported by a magnetic fluid seal 25c.
  • the magnetic fluid seal 25c transmits only the rotational force to the shaft body 25a while maintaining airtightness with the shaft body 25a.
  • the moving mechanism 23 rotates the shaft body 25a by the z-axis using the stepping motor 25b as a power source. Then, the operation A is performed by rotating the arm 22 in the z-axis by the rotation of the shaft body 25a.
  • the second rotating shaft shaft portion 26 includes a shaft main body (second shaft main body) 26a and two bearings 26b as bearings of the shaft main body 26a.
  • the shaft body 26 a is integrally formed at the end of the arm 22 on the side opposite to the suction nozzle 21. Further, the two bearings 26b are fixed to the upper portion (the end portion on the arm 22 side) of the first rotating shaft shaft portion 25 in the z-axis direction.
  • the connecting portion between the first rotary shaft 25 and the arm 22 is configured by inserting the shaft body 26a into the two bearings 26a.
  • the cam mechanism 27 is a mechanism that determines the displacement of the suction nozzle 21 in the z-axis direction when the arm 22 rotates in the z-axis.
  • the cam mechanism 27 includes a cam follower 27a and a cam portion having a cam surface 27b that contacts the cam follower 27a. I have.
  • the cam follower 27a is provided on the lower surface of the arm 22 and is displaced in accordance with the z-axis rotation of the arm 22 described above. As shown in FIG. 2, the cam portion having the cam surface 27b is installed on a track drawn by the displacement of the cam follower 27a. As a result, the cam follower 27a always contacts the cam surface 27b and rotates while the arm 22 rotates in the z-axis direction.
  • the cam surface 27b includes an inclined surface inclined with respect to the xy plane and a flat surface parallel to the xy plane. Therefore, when the arm 22 rotates in the z-axis, the cam follower 27a continuously rotates and moves on the flat surface and the inclined surface of the cam surface 27b. The arm 22 rotates in the y axis in accordance with the rotational movement of the cam follower 27a. Then, by the y-axis rotation of the arm 22, an operation B in which the suction nozzle 21 moves up and down in the z-axis direction is performed.
  • the operation B by the moving mechanism 23 is an operation of moving the suction nozzle 21 up and down to displace the bottom surface 21 a of the suction nozzle 21 to a position higher than the top surface 4 a of the chamber body 4.
  • the suction nozzle 21 moves from the inside of the chamber 1 to the outside or from the outside to the inside by the operation B (that is, movement by the operation A)
  • the accommodation space of the susceptor 10 is accommodated. Over the stepped portion (upper surface 4a) forming the.
  • the vertical displacement of the suction nozzle 21 in the z-axis direction is determined by the positions of the inclined surface and the flat surface of the cam surface 27b. That is, when the cam follower 27a rotates on the flat surface when the arm 22 rotates in the z-axis, the suction nozzle 21 does not move up and down and there is no displacement in the z-axis direction. On the other hand, when the cam follower 27a rotates and moves, for example, a raised surface raised from the flat surface as an inclined surface, the suction nozzle 21 is displaced upward (in the chamber lid 6 side) in the z-axis direction.
  • the distance between the substrate tray mounting table 9 and the suction nozzle 21 is the distance between the cam follower 27a and the cam surface 27b. It is not determined by relationships.
  • a stopper 28 is fixed vertically (z-axis direction) downward at the end of the arm 22 on the suction nozzle 21 side. The distance between the substrate tray mounting table 9 and the suction nozzle 21 is always constant because the stopper 28 finally comes into contact with the upper surface 4a of the chamber body 4 when the suction nozzle 21 moves onto the substrate tray mounting table 9. Kept.
  • the chamber 1 provided in the vapor phase growth apparatus includes a seal part for bringing the chamber body 4 and the chamber lid 6 into close contact, a substrate rotating part for supplying reaction gas to all the substrates 7 with equal distribution, a seal part, It is comprised from fixed parts other than a board
  • the substrate rotating unit includes a substrate tray mounting table 9 and a susceptor 10.
  • the fixed portion includes a step portion (upper surface 4 a) that forms a housing space for the susceptor 10.
  • the reaction gas flow hits the fixed part. For this reason, a structure that is not directly related to film formation cannot be arranged in the fixed portion of the chamber 1.
  • the substrate tray mounting table 9 to be cleaned rotates around the central axis O as a rotation axis. For this reason, when the size of the chamber 1 is large and the arm 22 is designed to be long, the arm 22 may resonate and vibrate due to the suction force generated at the end of the arm 22 (end on the suction nozzle 21 side). .
  • the stopper 28 extending vertically downward is provided in the vicinity of the suction nozzle 21 in the arm 22. Therefore, when the stopper 28 comes into contact with the upper surface 4a, the installation point of the stopper 28 in the arm 22 becomes a fulcrum, and the rotational moment of the arm 22 due to the suction force can be reduced. As a result, the resonance vibration of the arm 22 can be suppressed.
  • the distance between the substrate tray mounting table 9 and the suction nozzle 21 can be kept constant without being affected by the deflection of the arm 22 due to the weight of the suction nozzle 21 and the arm 22 or the suction force.
  • the substrate 7 and the substrate tray 8 mounted on the substrate tray mounting table 9 are transported and collected out of the chamber 1 (transported or recovered) by an automatic transport robot (not shown). Then, immediately after the last substrate 7 and substrate tray 8 are transported and collected out of the chamber 1, the stepping motor 25b is operated. As a result, the arm 22 is rotated in the z-axis direction, and the suction nozzle 21 is moved up and down to get over the upper surface 4a of the chamber body 4. Then, when the suction nozzle 21 is moved onto the substrate tray mounting table 9, the operation of the stepping motor 25b is stopped.
  • a vacuum pump (not shown) is operated while the suction nozzle 21 is stationary, and dust removal on the substrate tray mounting table 9 is started.
  • the substrate tray mounting table 9 is rotated around the central axis O of the chamber 1 at a constant angular velocity by the rotating mechanism 11 together with the susceptor 10.
  • the width of the suction nozzle 21 is preferably equal to or larger than the width of the substrate tray mounting table 9.
  • suction by a vacuum pump (not shown) is finished. Then, the stepping motor 25b is operated to rotate the arm 22 in the z axis. When the arm 22 moves to the outside of the chamber 1, the stepping motor 25b is stopped.
  • the cleaning means 2 is operated so that the above-described series of operations are completed before an automatic transfer robot (not shown) installs the new substrate 7 and the substrate tray 8 on the substrate tray mounting table 9.
  • the present invention can also be expressed as follows.
  • a chamber composed of a main body and a lid; a deposition object placing table; a mechanism for rotating the deposition object placing table around a central axis of the chamber; and the film deposition object placing table on the deposition object placing table.
  • the dust removing means includes an arm having a rotating shaft outside the chamber, and is not in contact with the deposition object mounting table at the end of the arm.
  • a vapor phase growth apparatus having a suction nozzle and capable of moving the suction nozzle from the inside to the outside and from the outside to the inside by the rotation of the arm.
  • the removing unit includes an arm extending to the film mounting table, a suction nozzle provided at one end of the arm, and the central axis.
  • a first shaft portion extending in a parallel first direction is provided outside the chamber, and the arm is rotated about the first shaft portion as a rotation axis, whereby the suction nozzle is moved from the outside of the chamber. It is the structure provided with the moving mechanism to which it moves to the inside and the inside from the exterior.
  • the vapor deposition apparatus includes a rotation mechanism that rotates the deposition object mounting table with the central axis of the chamber as a rotation axis.
  • the removing means sequentially removes dust from the rotating film mounting table. become. Therefore, according to the above configuration, it is possible to more efficiently remove dust on the film formation object mounting table.
  • the width of the suction nozzle is preferably equal to or larger than the width of the film mounting table in the longitudinal direction of the arm.
  • the moving mechanism includes a second shaft portion extending in the first direction and a second direction perpendicular to the longitudinal direction of the arm, and the first shaft portion. And a cam mechanism for moving the suction nozzle up and down in the first direction when the arm rotates about the rotation axis.
  • the moving mechanism includes the second shaft portion extending in the first direction and the second direction perpendicular to the longitudinal direction of the arm.
  • the arm can be rotated with the shaft portion as the rotation axis.
  • the suction nozzle provided at one end of the arm can be moved in the first direction perpendicular to the second shaft portion.
  • the moving mechanism further includes a cam mechanism that moves the suction nozzle up and down in the first direction when the arm rotates with the first shaft portion as a rotation axis. The cam mechanism determines the movement of the suction nozzle in the first direction.
  • step-difference part erected in the 1st direction (the direction of the said central axis) between the 1st axial part and the to-be-film-formed object mounting stand so that it may become higher than a to-be-film-formed object mounting base.
  • the moving mechanism moves the suction nozzle up and down in the first direction, climbs over the stepped portion, and appropriately moves on the deposition object mounting table.
  • the suction nozzle can be moved to a position.
  • the second shaft portion includes a second shaft body provided at a connection portion between the first shaft portion and the arm, and a bearing of the second shaft body.
  • the center of the arm rotation with the second shaft portion as the rotation axis and the center of the arm rotation with the first shaft portion as the rotation axis are both connected to the first shaft portion and the arm. This makes it possible to rotate the arm more efficiently.
  • the arm includes a stopper extending vertically downward in the first direction.
  • the arm since the arm includes a stopper extending vertically downward in the first direction, when the suction nozzle moves to the deposition object mounting table, the stopper is the above-mentioned of the chamber. It will contact the upper surface of the main body. That is, according to said structure, the said stopper extended perpendicularly downward plays the role which maintains the distance of the to-be-film-formed object mounting base and suction nozzle. Therefore, according to the above-described configuration, the distance between the deposition object mounting table and the suction nozzle is always kept constant regardless of the weight of the arm and the suction nozzle and the deflection of the arm due to the suction force of the suction nozzle. And dust removal can be performed efficiently.
  • the first shaft portion includes a first shaft body connected to an end portion of the arm opposite to the suction nozzle, and a power source for rotating the first shaft body. It is preferable to have provided. Thereby, an arm can be rotated efficiently.
  • the vapor phase growth apparatus of the present invention can remove dust on the deposition object mounting table without being affected by the vertical movement of the lid accompanying opening and closing of the chamber. Can be used in the field of semiconductor substrate manufacturing that requires
  • Chamber 2 Cleaning means (removal means) 3 Glove box 4 Chamber body 5 Vertical movement mechanism 6 Chamber lid 7 Substrate (film formation) 8 Substrate tray 9 Substrate tray mounting table (film deposition table) 10 Susceptor 11 Rotating Mechanism 21 Suction Nozzle 22 Arm 23 Moving Mechanism 24 Piping Tube 25 First Rotating Shaft Shaft (First Shaft) 25a Shaft body (first shaft body) 25b Stepping motor (power source) 25c Magnetic fluid seal 26 Second shaft shaft portion (second shaft portion) 26a Shaft body (second shaft body) 26b Bearing 27 Cam mechanism 27a Cam follower 27b Cam surface 28 Stopper

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Afin de supprimer la poussière sur un étage de montage, sur lequel est placé un sujet sur lequel un film doit être déposé, sans influence d'un couvercle de chambre se déplaçant verticalement lors de l'ouverture et de la fermeture d'une chambre destinée à un appareil de dépôt par évaporation sous vide couvert, la présente invention fournit un appareil de dépôt par évaporation sous vide qui comprend une chambre (1) constituée d'un corps principal de chambre (4) et d'un couvercle de chambre (6), un étage de montage de plateau de substrat (9) disposé dans la chambre (1), un mécanisme rotatif (11) permettant de faire tourner l'étage de montage de plateau de substrat (9) autour de l'axe central (O) de la chambre (1), et un moyen de nettoyage (2) permettant de supprimer la poussière sur l'étage de montage de plateau de substrat (9). Le moyen de nettoyage (2) inclut à l'extérieur de la chambre (1) un mécanisme de déplacement (23) doté d'un bras (22) s'étendant vers l'étage de montage de plateau de substrat (9), une buse d'aspiration (21) disposée sur une extrémité du bras (22), et une première partie d'arbre rotatif (25) s'étendant dans une première direction parallèle à l'axe central (O). Le bras (22) est tourné autour de la première partie d'arbre rotatif (25) afin de déplacer la buse d'aspiration (21) dans la chambre (1) et vice versa.
PCT/JP2010/059114 2009-06-09 2010-05-28 Appareil de dépôt par évaporation sous vide Ceased WO2010143544A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009138563A JP4694637B2 (ja) 2009-06-09 2009-06-09 気相成長装置
JP2009-138563 2009-06-09

Publications (1)

Publication Number Publication Date
WO2010143544A1 true WO2010143544A1 (fr) 2010-12-16

Family

ID=43308799

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/059114 Ceased WO2010143544A1 (fr) 2009-06-09 2010-05-28 Appareil de dépôt par évaporation sous vide

Country Status (3)

Country Link
JP (1) JP4694637B2 (fr)
TW (1) TWI422695B (fr)
WO (1) WO2010143544A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4528788A1 (fr) * 2022-05-19 2025-03-26 NuFlare Technology, Inc. Procédé de maintenance pour appareil de fabrication de semi-conducteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766108A (ja) * 1993-08-31 1995-03-10 Dainippon Screen Mfg Co Ltd 処理液塗布装置
JPH1022204A (ja) * 1996-07-05 1998-01-23 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2001341054A (ja) * 2000-06-02 2001-12-11 Mitsubishi Motors Corp 平面ラップ盤のワーク着脱装置
WO2007132609A1 (fr) * 2006-05-15 2007-11-22 Tokyo Electron Limited Procédé de traitement de substrat, appareil de traitement de substrat et support d'enregistrement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210162A (ja) * 1982-06-02 1983-12-07 Toshiba Corp 蒸着装置の浄化方法及びその装置
JPH04176867A (ja) * 1990-11-13 1992-06-24 Kawasaki Steel Corp 多段式真空差圧室の防塵装置
JP2002080122A (ja) * 2000-09-04 2002-03-19 Matsushita Electric Ind Co Ltd 移載装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766108A (ja) * 1993-08-31 1995-03-10 Dainippon Screen Mfg Co Ltd 処理液塗布装置
JPH1022204A (ja) * 1996-07-05 1998-01-23 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2001341054A (ja) * 2000-06-02 2001-12-11 Mitsubishi Motors Corp 平面ラップ盤のワーク着脱装置
WO2007132609A1 (fr) * 2006-05-15 2007-11-22 Tokyo Electron Limited Procédé de traitement de substrat, appareil de traitement de substrat et support d'enregistrement

Also Published As

Publication number Publication date
JP2010287631A (ja) 2010-12-24
JP4694637B2 (ja) 2011-06-08
TWI422695B (zh) 2014-01-11
TW201103993A (en) 2011-02-01

Similar Documents

Publication Publication Date Title
TWI895705B (zh) 維護裝置
JP7297664B2 (ja) プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
TWI508152B (zh) Liquid treatment device
US7275553B2 (en) Liquid processing apparatus and liquid processing method
US7523769B2 (en) Enclosed container lid opening/closing system and enclosed container lid opening/closing method
KR102024386B1 (ko) 기판 유지 장치 및 기판 유지 방법
JP6067035B2 (ja) 基板処理モジュール及びそれを含む基板処理装置
JPWO2017090505A1 (ja) 基板液処理装置、基板液処理方法および記憶媒体
TWI402373B (zh) A CVD reactor that can replace the reaction chamber roof
JP2013165241A (ja) 搬送装置
JP4694637B2 (ja) 気相成長装置
WO2012002125A1 (fr) Dispositif de formation de film métallique
KR20120075430A (ko) 액처리 장치
US8794896B2 (en) Vacuum processing apparatus and zonal airflow generating unit
JP2011159834A (ja) ガス置換装置を備えた基板搬送装置、基板搬送システム、置換方法
CN104253067A (zh) 基板处理装置、沉积装置、基板处理方法及沉积方法
JP5676362B2 (ja) 液処理装置および液処理装置の洗浄方法
JP7316102B2 (ja) ウエハ搬送装置
KR20060131912A (ko) 단일제품 공정챔버
JP5238331B2 (ja) 基板処理装置および基板処理システム
CN118315314A (zh) 一种驱动装置及其晶圆传送装置、炉管设备和方法
JP2026500712A (ja) 基板を洗浄するための一体型の洗浄および乾燥モジュール
KR20100059336A (ko) 팬 필터 유닛과, 이를 구비한 기판 처리 장치
KR102096948B1 (ko) 기판 처리 설비
CN103765557A (zh) 气相沉积设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10786075

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10786075

Country of ref document: EP

Kind code of ref document: A1