WO2012103885A4 - Abscheidevorrichtung und verfahren zur herstellung eines tiegels hierfür - Google Patents
Abscheidevorrichtung und verfahren zur herstellung eines tiegels hierfür Download PDFInfo
- Publication number
- WO2012103885A4 WO2012103885A4 PCT/DE2012/100020 DE2012100020W WO2012103885A4 WO 2012103885 A4 WO2012103885 A4 WO 2012103885A4 DE 2012100020 W DE2012100020 W DE 2012100020W WO 2012103885 A4 WO2012103885 A4 WO 2012103885A4
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- titanium
- separating device
- protective layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49982—Coating
- Y10T29/49986—Subsequent to metal working
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Claims
IN ARTIKEL 19 (1 ) GENANNTE ERKLÄRUNG In Anspruch 1 wurden folgende Merkmale ergänzt:
1. Schutzschicht (13) weist eine Dicke von mindestens 50nm auf. Dieses Merkmal wurde in Anspruch 6 offenbart. Es wurde ergänzt, um sich noch weiter vom ermittelten Stand der Technik abzugrenzen.
2. Der Körper (11 ) des Tiegels (1 ) ist aus Titan oder aus einer Titan-basierten Legierung gebildet. Dieses Merkmal wurde in Anspruch 3 und in der
Beschreibung auf Seite 4 im dritten Absatz offenbart. Es wurde ergänzt, um klarzustellen, dass auch ein reines Titanmetall unter dem Begriff
Titanlegierung gemäß der Erfindung fällt.
Der Verfahrensanspruch (jetzt Anspruch 7) wurde an den Anspruch 1 angepasst.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/982,985 US20140026815A1 (en) | 2011-02-04 | 2012-01-31 | Separating Device and Method for Producing A Crucible For Said Separating Device |
| CN2012800075670A CN103459650A (zh) | 2011-02-04 | 2012-01-31 | 蒸镀装置和用于为其生产坩埚的方法 |
| JP2013552106A JP6050255B2 (ja) | 2011-02-04 | 2012-01-31 | 堆積装置および堆積装置用の坩堝を生産する方法 |
| KR1020137019831A KR20130110211A (ko) | 2011-02-04 | 2012-01-31 | 분리 장치 및 상기 분리 장치용 도가니의 제조 방법 |
| EP12713863.4A EP2670877A1 (de) | 2011-02-04 | 2012-01-31 | Abscheidevorrichtung und verfahren zur herstellung eines tiegels hierfür |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011000502A DE102011000502A1 (de) | 2011-02-04 | 2011-02-04 | Abscheidevorrichtung und Verfahren zur Herstellung eines Tiegels hierfür |
| DE102011000502.1 | 2011-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2012103885A1 WO2012103885A1 (de) | 2012-08-09 |
| WO2012103885A4 true WO2012103885A4 (de) | 2012-10-18 |
Family
ID=45952809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE2012/100020 Ceased WO2012103885A1 (de) | 2011-02-04 | 2012-01-31 | Abscheidevorrichtung und verfahren zur herstellung eines tiegels hierfür |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140026815A1 (de) |
| EP (1) | EP2670877A1 (de) |
| JP (1) | JP6050255B2 (de) |
| KR (1) | KR20130110211A (de) |
| CN (1) | CN103459650A (de) |
| DE (1) | DE102011000502A1 (de) |
| TW (1) | TWI576447B (de) |
| WO (1) | WO2012103885A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI470110B (zh) * | 2012-09-07 | 2015-01-21 | Manz Taiwan Ltd | 用於化學沉積設備的夾固裝置 |
| KR101582672B1 (ko) * | 2013-12-17 | 2016-01-05 | (주)알파플러스 | 증발용 도가니와 이를 포함하는 진공 증발원 및 진공 증착 장치 |
| US11272579B2 (en) * | 2016-06-17 | 2022-03-08 | Tocalo Co., Ltd. | Heat generating component |
| SG10201608496UA (en) * | 2016-10-11 | 2018-05-30 | Au Optronics Corp | Crucible |
| CN109972096B (zh) * | 2017-12-28 | 2021-04-13 | 核工业西南物理研究院 | 一种在料舟表面沉积金属涂层的方法 |
| CN109161854A (zh) * | 2018-10-11 | 2019-01-08 | 北京铂阳顶荣光伏科技有限公司 | 蒸镀装置及装置保护层的制备方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1022278A (en) * | 1963-05-19 | 1966-03-09 | Abraham Bar Or | Improvements in or relating to crucibles |
| DE1544222A1 (de) * | 1966-08-19 | 1970-02-26 | Licentia Gmbh | Vorrichtung zum Schmelzen und Verdampfen von Halbleiterstoffen,insbesondere von Selen |
| US3890140A (en) * | 1973-05-10 | 1975-06-17 | Us Energy | Aluminum titanate crucible for molten uranium |
| US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
| DE3328355A1 (de) * | 1983-08-05 | 1985-02-14 | Degussa Ag, 6000 Frankfurt | Tiegel zur aufnahme von salzbaedern fuer das borieren von staehlen |
| JPH01139988A (ja) * | 1987-11-26 | 1989-06-01 | Toshiba Corp | 金属溶解用るつぼ |
| US5135782A (en) * | 1989-06-12 | 1992-08-04 | Rostoker, Inc. | Method of siliciding titanium and titanium alloys |
| JPH0537214A (ja) * | 1991-07-26 | 1993-02-12 | Tdk Corp | 多層基板による共振器 |
| US5934900A (en) * | 1996-03-29 | 1999-08-10 | Integrated Thermal Sciences, Inc. | Refractory nitride, carbide, ternary oxide, nitride/oxide, oxide/carbide, oxycarbide, and oxynitride materials and articles |
| TW533440B (en) * | 2000-12-19 | 2003-05-21 | Toho Titanium Co Ltd | Method for forming titanium oxide film and titanium electrolytic capacitor |
| JP4439894B2 (ja) * | 2003-12-01 | 2010-03-24 | 株式会社半導体エネルギー研究所 | 蒸着用るつぼ及び蒸着装置 |
| KR100592304B1 (ko) | 2004-11-05 | 2006-06-21 | 삼성에스디아이 주식회사 | 가열 용기와 이를 구비한 증착 장치 |
| US8323348B2 (en) * | 2005-02-22 | 2012-12-04 | Taiyen Biotech Co., Ltd. | Bone implants |
| TW200632013A (en) * | 2005-03-02 | 2006-09-16 | Nano Tech Chemical & System Ltd | The film-forming method of producing an inorganic protective film on the metal surface |
| JP4032068B2 (ja) * | 2005-07-28 | 2008-01-16 | 株式会社神戸製鋼所 | 燃料電池用のセパレータに用いるチタン材 |
| JP4738113B2 (ja) * | 2005-09-15 | 2011-08-03 | 株式会社東芝 | 真空蒸着装置用るつぼおよびそれを用いた有機elディスプレイの製造方法 |
| KR100805531B1 (ko) * | 2006-06-13 | 2008-02-20 | 삼성에스디아이 주식회사 | 증발원 |
| CN100582289C (zh) * | 2006-06-28 | 2010-01-20 | 鸿富锦精密工业(深圳)有限公司 | 组合式坩埚 |
| KR101263005B1 (ko) | 2006-12-19 | 2013-05-08 | 비코 인스트루먼츠 인코포레이티드 | 증착 장치 및 방법 |
| JP4941754B2 (ja) | 2007-09-05 | 2012-05-30 | ソニー株式会社 | 蒸着装置 |
| US20090217876A1 (en) * | 2008-02-28 | 2009-09-03 | Ceramic Technologies, Inc. | Coating System For A Ceramic Evaporator Boat |
| JP5469950B2 (ja) * | 2008-08-08 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| WO2010110871A2 (en) * | 2009-03-25 | 2010-09-30 | Veeco Instruments Inc. | Deposition of high vapor pressure materials |
-
2011
- 2011-02-04 DE DE102011000502A patent/DE102011000502A1/de not_active Withdrawn
-
2012
- 2012-01-30 TW TW101102796A patent/TWI576447B/zh not_active IP Right Cessation
- 2012-01-31 WO PCT/DE2012/100020 patent/WO2012103885A1/de not_active Ceased
- 2012-01-31 KR KR1020137019831A patent/KR20130110211A/ko not_active Ceased
- 2012-01-31 EP EP12713863.4A patent/EP2670877A1/de not_active Withdrawn
- 2012-01-31 CN CN2012800075670A patent/CN103459650A/zh active Pending
- 2012-01-31 US US13/982,985 patent/US20140026815A1/en not_active Abandoned
- 2012-01-31 JP JP2013552106A patent/JP6050255B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI576447B (zh) | 2017-04-01 |
| KR20130110211A (ko) | 2013-10-08 |
| US20140026815A1 (en) | 2014-01-30 |
| DE102011000502A1 (de) | 2012-08-09 |
| EP2670877A1 (de) | 2013-12-11 |
| WO2012103885A1 (de) | 2012-08-09 |
| JP2014508860A (ja) | 2014-04-10 |
| CN103459650A (zh) | 2013-12-18 |
| JP6050255B2 (ja) | 2016-12-21 |
| TW201233831A (en) | 2012-08-16 |
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