WO2013140687A1 - Procédé d'alignement et procédé permettant de fabriquer un module laser à semi-conducteurs - Google Patents

Procédé d'alignement et procédé permettant de fabriquer un module laser à semi-conducteurs Download PDF

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Publication number
WO2013140687A1
WO2013140687A1 PCT/JP2012/082639 JP2012082639W WO2013140687A1 WO 2013140687 A1 WO2013140687 A1 WO 2013140687A1 JP 2012082639 W JP2012082639 W JP 2012082639W WO 2013140687 A1 WO2013140687 A1 WO 2013140687A1
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WIPO (PCT)
Prior art keywords
optical fiber
face
semiconductor laser
crit
angle
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Ceased
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PCT/JP2012/082639
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English (en)
Japanese (ja)
Inventor
小川　弘晋
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Fujikura Ltd
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Fujikura Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
    • G02B6/4225—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements by a direct measurement of the degree of coupling, e.g. the amount of light power coupled to the fibre or the opto-electronic element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/14—Mode converters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G02B6/4203—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres

Definitions

  • the present invention relates to an alignment method for adjusting a relative position between an emission end face of a semiconductor laser element and an incident end face of an optical fiber. Moreover, it is related with the manufacturing method of a semiconductor laser module including the alignment process using such an alignment method.
  • Semiconductor laser modules are widely used as light source devices such as fiber lasers.
  • the semiconductor laser module includes a semiconductor laser element provided in the casing and an optical fiber drawn into the casing.
  • the semiconductor laser element and the optical fiber are fixed to the bottom plate of the semiconductor laser module or a submount provided on the bottom plate.
  • Fig. 6 shows an overview of the conventional alignment method.
  • the alignment method shown in FIG. 6 includes a semiconductor laser module LD fixed to the bottom plate 51 via the submount 52 and an optical fiber drawn through the insertion pipe 54 and fixed to the bottom plate 51 via the submount 53.
  • F is an alignment method used in the manufacture of the semiconductor laser module 50 including F, and is performed before the optical fiber F is fixed to the submount 53.
  • the semiconductor laser element LD is an edge-emitting semiconductor laser element having an active layer parallel to the zx plane in FIG. 6, and light emitted from the emission end face of the semiconductor laser element LD spreads in the y-axis direction due to diffraction. For this reason, in the alignment of the optical fiber F, it is particularly important to accurately align in the y-axis direction (the direction orthogonal to the active layer of the semiconductor laser element LD).
  • the alignment of the optical fiber F in the y-axis direction is performed with reference to the intensity of the output light output from the exit end face of the optical fiber F. That is, the incident end face of the optical fiber F is moved in the y-axis direction while measuring the intensity of the output light of the optical fiber F with the power meter PM. Then, the position of the incident end face of the optical fiber F in the y-axis direction is matched with the position where the intensity of the output light of the optical fiber F is maximized (hereinafter also referred to as “appropriate position”).
  • the incident end face of the optical fiber F is processed so that the cross section parallel to the yz plane has a wedge shape, and the hatched area near the ridge line is the lens portion L. Is configured.
  • Light emitted from the active layer AL of the semiconductor laser element LD enters the optical fiber F through the lens portion L. If the propagation angle ⁇ is
  • JP 2003-57498 Japanese Patent Publication “JP 2007-258479” (released October 4, 2007)
  • JP 2007-287726 Japanese Patent Publication “JP 2007-287726” (published November 1, 2007)
  • the semiconductor laser module If the light propagating through the optical fiber constituting the semiconductor laser module contains a component having a propagation angle close to the critical propagation angle of the optical fiber (hereinafter also referred to as “wide angle component”), the semiconductor laser module is There arises a problem that the efficiency of the provided fiber laser or fiber amplifier is deteriorated or the coating of the optical fiber for amplification is heated. This is because the wide-angle component contained in the light propagating through the optical fiber constituting the semiconductor laser module becomes a loss factor in the pump combiner and amplification fiber connected to the optical fiber.
  • the position of the incident end face of the optical fiber (relative to the outgoing end face of the semiconductor laser element) is reduced so as to reduce the wide-angle component contained in the light propagating through the optical fiber. Relative position) is required to be determined.
  • the incident end face of the optical fiber is a lens as shown in FIG.
  • the processed optical fiber F is an alignment target
  • FIG. 8B when the incident end face of the optical fiber F is displaced in the y-axis direction, a part of the light emitted from the active layer AL of the semiconductor laser element LD is shown in FIG. As shown by a dotted line in b), the light enters the optical fiber F without passing through the lens portion L.
  • the light incident on the optical fiber F without passing through the lens portion L is the same as the light incident on the optical fiber F through the lens portion L if the propagation angle ⁇ ′ is
  • the maximum propagation angle ⁇ max refers to the propagation angle of light (mode) having the maximum propagation angle among the light (mode) that actually propagates through the optical fiber F.
  • the tolerance of the light output (the intensity of the output light of the optical fiber F) may be widened.
  • the light propagating through the optical fiber F includes a wide angle component.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide an output light from an optical fiber in an alignment method for adjusting a relative position between an emission end face of a semiconductor laser element and an incident end face of an optical fiber.
  • An alignment method that can reduce the wide-angle component contained in the light propagating through the optical fiber is realized.
  • an alignment method for adjusting a relative position between an emission end face of a semiconductor laser element and an incident end face of an optical fiber, and propagates through the optical fiber. From light whose propagation angle ⁇ is
  • alignment capable of reducing the wide-angle component contained in light propagating through an optical fiber can be realized with a simpler configuration than alignment based on FFP.
  • FIG. 2 is a diagram showing an optical path of light propagating through an optical fiber in the alignment method shown in FIG. 1.
  • the solid line is a graph showing the tolerance curve of the optical output of the low NA fiber F2 in the alignment method shown in FIG.
  • the dotted line is a graph showing the tolerance curve of the optical output of the optical fiber F1 in the alignment method shown in FIG.
  • FIG. 5 is a diagram showing an optical path of light propagating through an optical fiber in the alignment method shown in FIG. 4. It is a schematic diagram which shows the outline
  • FIG. 6 is a graph which shows the tolerance curve of the optical output obtained in the alignment method shown in FIG.
  • FIG. 7 is a diagram showing an optical path of light propagating through an optical fiber in the alignment method shown in FIG. 6.
  • A shows the case where the position of the incident end face of the optical fiber is in an appropriate position
  • (b) shows the case where the position of the incident end face of the optical fiber is out of the proper position.
  • the alignment method according to the present embodiment is used in the alignment process included in the manufacturing method of the semiconductor laser module, and the alignment target is the semiconductor laser element and the optical fiber constituting the semiconductor laser module.
  • the present invention is not limited to this.
  • the alignment method according to the present invention only needs to adjust the relative position between the emission end face of the semiconductor laser element and the incident end face of the optical fiber, and the semiconductor laser element and the optical fiber to be aligned are semiconductor lasers. It does not need to be part of a module.
  • FIG. 1 is a schematic diagram showing an outline of the alignment method according to the present embodiment.
  • the alignment method according to the present embodiment is used in the alignment process included in the manufacturing method of the semiconductor laser module 10 as described above.
  • a semiconductor laser module including a bottom plate 11 and submounts 12 to 13 in addition to the semiconductor laser element LD and the optical fiber F1 is assumed as the semiconductor laser module 10.
  • the optical fiber F1 is a multimode fiber having a lens processed on an end face (hereinafter also referred to as an “incident end face”) facing the emission end face of the semiconductor laser element LD.
  • the submount 12 is used as a base for mounting the semiconductor laser element LD.
  • the submount 13 is used as a pedestal for placing the optical fiber F1.
  • the optical fiber F1 is drawn into the semiconductor laser module 10 via an insertion pipe 14 provided on the side wall of the semiconductor laser module 10 and fixed (soldered or bonded) to the upper surface of the submount 13.
  • the alignment method according to the present embodiment is performed after the step of drawing the optical fiber F1 into the semiconductor laser module 10 and before the step of fixing the optical fiber F1 to the upper surface of the submount 13.
  • the alignment method includes (1) an insertion step of inserting a low NA optical fiber F2 having a numerical aperture lower than that of the optical fiber F1 into the output end face side of the optical fiber F1, and (2) a low NA optical fiber. And adjusting the position of the incident end face of the optical fiber F1 with respect to the exit end face of the semiconductor laser module LD so as to maximize the intensity with reference to the intensity of the light output from F2.
  • the low NA optical fiber F2 functions as a wide-angle component removing unit that removes the wide-angle component from the light propagating through the optical fiber F1 and outputs the remaining narrow-angle component. Therefore, the adjustment process described above is performed with reference to a narrow-angle component in the light propagating through the optical fiber F1.
  • one end face of the low NA optical fiber F2 (hereinafter also referred to as “incident end face”) is used as an outgoing end face of the optical fiber F1 (an end face opposite to the incident end face facing the outgoing end face of the semiconductor laser element LD).
  • incident end face an end face opposite to the incident end face facing the outgoing end face of the semiconductor laser element LD.
  • exit end face the intensity of light (narrow angle component) emitted from the other end face (hereinafter also referred to as “exit end face”) of the low NA optical fiber F2 is measured with the power meter PM,
  • the incident end face is moved in the y-axis direction (direction perpendicular to the active layer of the semiconductor laser element LD).
  • the position of the incident end face of the optical fiber F1 in the y-axis direction is matched with the position where the intensity of light emitted from the exit end face of the low NA optical fiber F2 is maximized.
  • this invention is not limited to this.
  • a configuration in which the optical fiber F1 is directly fixed to the bottom plate 11 may be employed.
  • a configuration in which the semiconductor laser element LD is directly fixed to the bottom plate 11 may be employed.
  • FIG. 2 is a diagram illustrating an optical path of light propagating through the optical fiber F1 and the low NA optical fiber F2.
  • the optical fiber F1 propagates light whose propagation angle ⁇ is
  • the low NA optical fiber F2 propagates light whose propagation angle ⁇ ′ is
  • the low NA optical fiber F2 is an optical fiber having a lower numerical aperture than the optical fiber F1. Therefore, the critical angle ⁇ ′ that causes total reflection in the low NA optical fiber F2 is larger than the critical angle ⁇ that causes total reflection in the optical fiber F1.
  • the wide-angle component that becomes crit ′ leaks from the side surface of the low NA optical fiber F2 without being confined in the low NA optical fiber F2.
  • the function of the low NA optical fiber F2 can be expressed as follows. That is, the low NA optical fiber F2 removes a wide-angle component in which the propagation angle ⁇ in the optical fiber F1 is ⁇ crit ⁇ ⁇
  • ⁇ ⁇ crit ⁇ is output from the emission end face.
  • a solid line indicates an optical path corresponding to the narrow-angle component
  • a dotted line indicates an optical path corresponding to the wide-angle component.
  • the narrow angle component incident on the low NA optical fiber F2 is confined in the low NA optical fiber F2, as shown in FIG. 2, because the propagation angle ⁇ ′ in the low NA optical fiber F2 is
  • the wide-angle component incident on the low NA optical fiber F2 has a propagation angle ⁇ ′ in the low NA optical fiber F2 of
  • the dotted line is a tolerance curve of the optical output of the optical fiber F1 (the intensity of the light including both the wide-angle component and the narrow-angle component output from the output end face of the optical fiber F1)
  • the solid line is a low NA
  • It is a tolerance curve of the optical output of the optical fiber F2 (the intensity of light that is output from the output end face of the low NA optical fiber F2 and includes only the narrow-angle component).
  • the numerical aperture of the optical fiber F1 was 0.22
  • the numerical aperture of the low NA optical fiber F2 was 0.15.
  • the light propagating through the optical fiber F1 includes a wide-angle component. It comes to be.
  • This wide-angle component is output from the output end face of the optical fiber F1 as long as the propagation angle ⁇ in the optical fiber F1 does not exceed the critical propagation angle ⁇ crit of the optical fiber 1. For this reason, even if the position of the incident end face of the optical fiber F1 deviates from the proper position, the intensity of light output from the exit end face of the optical fiber F1 hardly decreases. Therefore, the tolerance of the optical output of the optical fiber F1 is widened as shown by a dotted line in FIG.
  • the tolerance of the output light of the low NA optical fiber F2 becomes narrower than the tolerance of the optical output of the optical fiber F1, as shown by a solid line in FIG. This is because, when the position of the incident end face of the optical fiber F1 deviates from the proper position, a wide angle component in which the propagation angle ⁇ ′ in the low NA optical fiber F2 exceeds the critical propagation angle ⁇ crit ′ of the low NA optical fiber F2 is low. This is because leakage occurs from the side surface of F2, and as a result, the intensity of light output from the emission end surface of the low NA optical fiber F2 decreases.
  • the position of the incident end face of the optical fiber F1 is adjusted with reference to the light output of the low NA optical fiber F2, the position of the incident end face of the optical fiber F1 is adjusted with reference to the light output of the optical fiber F1.
  • the low NA optical fiber F2 is used as the wide angle component removing means for removing the wide angle component from the light propagating through the optical fiber F1, but the present invention is not limited to this. That is, the low NA optical fiber F2 can be replaced with another optical system having a function of removing a wide-angle component from the light propagating through the optical fiber F1.
  • the low NA optical fiber F2 can be replaced with another optical system having a function of removing a wide-angle component from the light propagating through the optical fiber F1.
  • FIG. 4 is a schematic diagram showing an outline of the alignment method according to this modification.
  • a spatial filter constituted by a lens L is used as a wide-angle component removing unit.
  • the lens L is incident only on the light receiving surface of the power meter PM, of the light emitted from the emitting end face of the optical fiber F1, only the narrow-angle component in which the propagation angle ⁇ in the optical fiber F1 is
  • ⁇ ⁇ crit is incident on the light receiving surface of the power meter PM. Without being removed (see the dotted line in FIG. 5).
  • the alignment method according to the present embodiment is an alignment method for adjusting the relative position between the emission end face of the semiconductor laser element and the incident end face of the optical fiber, and the propagation angle propagates through the optical fiber.
  • the wide angle component contained in the light propagating through the optical fiber is removed by the wide angle component removing means, and alignment based on the intensity of the remaining narrow angle component is performed. Therefore, according to the above configuration, the ratio of the narrow-angle component included in the light propagating through the optical fiber is increased as much as possible, that is, the ratio of the wide-angle component included in the light propagating through the optical fiber is as large as possible.
  • the position of the incident end face of the optical fiber (relative position with respect to the emitting end face of the semiconductor laser element) can be adjusted so as to reduce the number.
  • the only measurement required for alignment is the measurement of the intensity of the narrow-angle component output from the wide-angle component removal means, and no FFP measurement is required. Therefore, alignment capable of reducing the wide-angle component contained in the light propagating through the optical fiber can be realized with a simpler configuration than alignment based on FFP.
  • the wide-angle component removing unit is another optical fiber connected to the emission end face of the optical fiber, and is another optical fiber having a lower numerical aperture than the optical fiber. Is preferable.
  • the wide-angle component removing unit can be realized with a simple configuration at low cost.
  • the optical fiber is preferably an optical fiber in which lens processing is performed on the incident end face.
  • the alignment method may decrease in alignment accuracy due to the increased tolerance of the output light in the conventional alignment method.
  • the alignment method according to the present invention since the spread of the tolerance of the output light can be suppressed, alignment with higher accuracy than the conventional alignment method can be realized.
  • the method for manufacturing a semiconductor laser module according to the present embodiment is a method for manufacturing a semiconductor laser module including a semiconductor laser element and an optical fiber, and includes an emission end face of the semiconductor laser element and the light.
  • the above alignment method is used.
  • alignment capable of reducing the wide-angle component contained in the light propagating through the optical fiber can be realized with a simpler configuration than alignment based on FFP. Therefore, a semiconductor laser module capable of outputting light that does not include a wide-angle component that causes a loss in the combiner or the amplification fiber can be realized at low cost.
  • the present invention can be widely applied to an alignment method for adjusting the relative position between the emission end face of the semiconductor laser element and the incident end face of the optical fiber.
  • it can be suitably used for alignment in a semiconductor laser module.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne une fibre optique (F2) à faible ouverture numérique (ON) qui élimine un composant de grand angle de la lumière passant par une fibre optique (F1) et qui est introduite dans la face d'extrémité d'émission de la fibre optique (F1). Ensuite, en se référant à l'intensité d'une sortie de composant à angle fermé depuis la fibre optique (F2) à faible ON, la position relative de la face d'extrémité incidente de la fibre optique (F1) par rapport à la face d'extrémité d'émission d'un élément laser (LD) à semi-conducteurs est ajustée de façon à maximiser l'intensité.
PCT/JP2012/082639 2012-03-21 2012-12-17 Procédé d'alignement et procédé permettant de fabriquer un module laser à semi-conducteurs Ceased WO2013140687A1 (fr)

Applications Claiming Priority (2)

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JP2012-063756 2012-03-21
JP2012063756A JP2013197372A (ja) 2012-03-21 2012-03-21 調心方法及び半導体レーザモジュールの製造方法

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WO2013140687A1 true WO2013140687A1 (fr) 2013-09-26

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JP7126062B2 (ja) * 2016-12-06 2022-08-26 パナソニックＩｐマネジメント株式会社 調芯方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283425A (ja) * 1994-04-07 1995-10-27 Hitachi Ltd 光送受信モジュール
JPH10332985A (ja) * 1997-05-27 1998-12-18 Canon Inc レンズの位置調整に用いる治具及びそれを用いたレンズ位置調整方法
JPH1158665A (ja) * 1997-08-27 1999-03-02 Asahi Chem Ind Co Ltd レーザ製版装置
JP2012042819A (ja) * 2010-08-20 2012-03-01 Fujikura Ltd レーザダイオードモジュール及びレーザ光源

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283425A (ja) * 1994-04-07 1995-10-27 Hitachi Ltd 光送受信モジュール
JPH10332985A (ja) * 1997-05-27 1998-12-18 Canon Inc レンズの位置調整に用いる治具及びそれを用いたレンズ位置調整方法
JPH1158665A (ja) * 1997-08-27 1999-03-02 Asahi Chem Ind Co Ltd レーザ製版装置
JP2012042819A (ja) * 2010-08-20 2012-03-01 Fujikura Ltd レーザダイオードモジュール及びレーザ光源

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