WO2013146762A1 - Conducteur métallique microcristallin et son procédé de fabrication - Google Patents

Conducteur métallique microcristallin et son procédé de fabrication Download PDF

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Publication number
WO2013146762A1
WO2013146762A1 PCT/JP2013/058737 JP2013058737W WO2013146762A1 WO 2013146762 A1 WO2013146762 A1 WO 2013146762A1 JP 2013058737 W JP2013058737 W JP 2013058737W WO 2013146762 A1 WO2013146762 A1 WO 2013146762A1
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WIPO (PCT)
Prior art keywords
wire
metal conductor
producing
microcrystalline metal
longitudinal direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/058737
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English (en)
Japanese (ja)
Inventor
浩之 因
芙美代 案納
松永　大輔
弘基 北原
新二 安藤
雅之 津志田
俊文 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fukuoka Prefectural Government
Kumamoto University NUC
Dyden Corp
Fukuoka Prefecture
Original Assignee
Fukuoka Prefectural Government
Kumamoto University NUC
Dyden Corp
Fukuoka Prefecture
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Application filed by Fukuoka Prefectural Government, Kumamoto University NUC, Dyden Corp, Fukuoka Prefecture filed Critical Fukuoka Prefectural Government
Publication of WO2013146762A1 publication Critical patent/WO2013146762A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

Definitions

  • the present invention relates to a microcrystalline metal conductor having bending resistance, which is used for cables that are repeatedly bent, for example, in industrial robots, consumer robots, automobile wiring, and the like, and a method for manufacturing the same.
  • Patent Document 1 discloses that 0.1 to 0.4% by mass of iron, 0.1 to 0.3% by mass of copper, 0.02 to 0.2% by mass of magnesium, and 0.02 to 0.02%. It is made of an aluminum alloy containing 2% by mass of silicon and 0.001 to 0.01% by mass of titanium and vanadium. The crystal grain size in the vertical cross section in the wire drawing direction is 5 to 25 ⁇ m, and the strain at room temperature.
  • Patent Document 2 proposes an aluminum alloy containing 0.1 to 0.3% by mass (weight%) of scandium as an aluminum-based conductive material that is lightweight and excellent in tensile strength and conductivity. .
  • the fatigue life of the aluminum alloy wire described in Patent Document 1 is set to 50000 times or more, and in an actual robot or the like, if one operation is 2 seconds, 86400 turns per day. Even if the aluminum alloy wire of Patent Document 1 is used, the robot cannot be operated stably for a long period of time.
  • an aluminum alloy described in Patent Document 2 for example, a wire rod made of an aluminum alloy containing 0.1% by mass of scandium is die-drawn to produce a strand having a wire diameter of 80 ⁇ m.
  • a left and right repeated bend test which is an example of a bending resistance test (for example, with a test piece loaded with a load of 100 g, a bend radius of 15 mm, a bend
  • the angle range is ⁇ 90 degrees
  • the number of cable breaks is in the range of 300,000 to 500,000 times. For this reason, it is difficult to operate the robot stably for a long period of time even if a cable using a strand formed of an aluminum alloy containing 0.1 mass% of scandium is used.
  • the reason why the number of breaks of the cable using the strand formed from the aluminum alloy described in Patent Document 2 is small is that when a strand having a wire diameter of 50 to 80 ⁇ m is formed from a wire rod by die drawing.
  • the average size of the portion along the direction orthogonal to the drawing direction of the crystal grains can be controlled to, for example, 1 ⁇ m or less, but the average size of the portion along the drawing direction of the crystal grains exceeds, for example, 10 ⁇ m. This is because a non-uniform crystal structure (crystal structure composed of fibrous crystals grown in the wire drawing direction) is formed.
  • An object of the present invention is to provide a microcrystalline metal conductor in which bending resistance is improved by improving the bending resistance and a manufacturing method thereof.
  • the microcrystalline metal conductor according to the first invention in accordance with the above object is a microcrystalline metal conductor obtained by subjecting a material subjected to strong processing to a cumulative equivalent strain of 4 or more to a shape imparting process, It has a crystal structure composed of crystal grains having an average grain size in the longitudinal direction of 10 ⁇ m or less and an average grain size in the direction orthogonal to the longitudinal direction of 2 ⁇ m or less.
  • the lower limit value of the average grain size in the longitudinal direction of the crystal grains and the direction orthogonal to the longitudinal direction is about 0.3 ⁇ m.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 ⁇ m, wherein the longitudinal direction is the wire drawing. It is a drawing direction of processing, and a direction orthogonal to the longitudinal direction can be a direction orthogonal to the drawing direction.
  • the method for producing a microcrystalline metal conductor according to the second invention in accordance with the above object performs a strong process in which the cumulative equivalent strain is 4 or more on the material, and further performs a shape imparting process on the material subjected to the strong process.
  • the lower limit value of the average grain size in the longitudinal direction of the crystal grains and the direction orthogonal to the longitudinal direction is about 0.3 ⁇ m.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 ⁇ m, wherein the longitudinal direction is It is a wire drawing direction of the wire drawing process, and a direction orthogonal to the longitudinal direction can be a direction orthogonal to the wire drawing direction.
  • the cross-sectional area reduction rate before and after one processing is 20% or less.
  • the equivalent strain introduced in the one-time processing is 0.5 or more.
  • the strong processing is preferably performed by pushing the wire from one side of the through hole where the mold is bent and discharging the wire from the other side.
  • a gripping means for pressing and holding the side portion of the wire is provided in front of the one side opening of the through hole, and the wire is held by the gripping means. It is preferable to push into the through hole.
  • the wire drawing is performed by a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming the strand from the thin wire.
  • the pre-drawing process is preferably performed in a range where the cross-sectional area reduction rate is 5 to 30%, and the finish-drawing process is preferably performed in a range where the workability is 3 to 11.
  • the pre-drawing treatment is preferably performed after preheating the wire that has been subjected to the strong processing.
  • the preheating is performed at a temperature lower by 20 to 100 ° C. than a recrystallization temperature of the wire subjected to the strong processing.
  • the finish drawing is performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire. It is preferable.
  • the strand is finish-heated at a temperature lower by 10 to 70 ° C. than a recrystallization temperature of the strand.
  • the microcrystalline metal conductor according to the third aspect of the invention that meets the above-mentioned object is a microcrystalline metal conductor obtained by performing a strong process with a cumulative equivalent strain of 4 or more, It has a crystal structure composed of crystal grains having an average grain size in the longitudinal direction of 10 ⁇ m or less and an average grain size in a direction perpendicular to the longitudinal direction of 2 ⁇ m or less.
  • the lower limit value of the average grain size in the direction perpendicular to the longitudinal direction and the longitudinal direction of the crystal grains is about 0.3 ⁇ m, respectively.
  • the average grain size in the longitudinal direction of the crystal grains constituting the crystal structure is 10 ⁇ m or less, and the average grain size in the direction orthogonal to the longitudinal direction is 2 ⁇ m or less. Therefore, coarse fibrous crystals are not included, and a fine crystal structure with excellent isotropic properties is obtained. For this reason, even if repeated deformation is applied, strain localization is unlikely to occur in the crystal structure, and embrittlement is unlikely to be induced. As a result, generation of fatigue cracks can be suppressed, and fatigue resistance characteristics (bending resistance) can be improved.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 80 ⁇ m
  • the longitudinal direction is a wire drawing of the wire drawing process.
  • the average grain size in the longitudinal direction of the crystal grains constituting the crystal structure is 10 ⁇ m or less, and the average grain size in the direction perpendicular to the longitudinal direction is 2 ⁇ m or less. Therefore, coarse fibrous crystals are not included, and a fine crystal structure excellent in isotropy is formed. For this reason, even when repeated deformation is applied, strain localization is unlikely to occur in the crystal structure, and the induction of embrittlement is suppressed. As a result, the occurrence of fatigue cracks can be suppressed and the fatigue resistance (bending resistance) is improved.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 80 ⁇ m
  • the longitudinal direction is the wire drawing process
  • the cross-sectional area reduction rate before and after one processing is 20% or less It becomes easy to repeatedly and strongly process the wire.
  • the equivalent strain introduced by one process is 0.5 or more, the accumulated equivalent strain of the wire can be easily set to an arbitrary value of 4 or more by repeating strong processing.
  • the cumulative equivalent strain of the wire can be easily quantitatively evaluated, and the cumulative equivalent strain of the wire can be accurately adjusted.
  • a gripping means for pressing and holding a side portion of the wire is provided in front of one side opening of the through hole, and the wire is pushed into the through hole by the gripping means.
  • the long wire can be continuously strongly processed.
  • the wire drawing process includes a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming a strand from the thin wire.
  • the pre-drawing process is performed in a range where the cross-sectional area reduction rate is 5 to 30% and the finish-drawing process is performed in a range where the processing degree is 3 to 11, the cross-sectional area reduction rate in the pre-drawing process
  • the burden of the finish wire drawing process for forming the wire from the thin wire is reduced, and the wire formed and the surface roughening are prevented. be able to.
  • the crystal structure of the wire before the drawing process is refined It is possible to prevent the crystal grains from growing in the direction parallel to the wire drawing direction by confining the strain caused by the pre-drawing process in the refined crystal grains.
  • the preheating when the preheating is performed at a temperature lower by 20 to 100 ° C. than the recrystallization temperature of the wire that has been strongly processed, the wire before the wire drawing is performed.
  • the refinement of the crystal structure can be reliably achieved.
  • the recrystallization of the crystal structure constituting the element wire is performed. Crystallization can be promoted to easily refine the structure.
  • the microcrystalline metal conductor 10 according to the first embodiment of the present invention is a wire 11 (see FIG. 3) that is an example of a material that has been subjected to strong processing with a cumulative equivalent strain of 4 or more.
  • a shape imparting process it is an example of a shape imparting process, and is obtained by performing a wire drawing process to form a strand having a wire diameter of 50 to 120 ⁇ m.
  • the average particle diameter B in the longitudinal direction (the wire drawing direction during the wire drawing process) Has a crystal structure composed of crystal grains 12 having an average grain size A of 0.3 ⁇ m or more and 2 ⁇ m or less in a direction perpendicular to the longitudinal direction (drawing direction).
  • the material of the wire 11 is a material (for example, copper, copper alloy, aluminum, aluminum alloy etc.) applied to the strand for cables (electric wires), there will be no restriction
  • the crystal grains 12 constituting the elemental crystal structure have an average grain size B in the drawing direction of 0.3 ⁇ m or more and 10 ⁇ m or less and an average grain in the direction perpendicular to the drawing direction.
  • the diameter A is 0.3 ⁇ m or more and 2 ⁇ m or less.
  • the size of the crystal grains 12 in a cross section perpendicular to the wire drawing direction that is, the grain size in a direction orthogonal to the wire drawing direction
  • the size of the crystal grains 12 in a cross section parallel to the wire drawing direction that is, the wire drawing.
  • the grain sizes in the linear direction have different dimensions within the above ranges, but are described with the same dimensions.
  • the average grain size A in the direction orthogonal to the drawing direction of the crystal grains 12 constituting the crystal structure of the strand is 0.3 ⁇ m or more and 2 ⁇ m or less, and the average grain diameter B in the drawing direction of the crystal grains 12 is
  • the thickness is 0.3 ⁇ m or more and 10 ⁇ m or less, the frequency of the presence of crystal grains (fibrous crystals) grown in the wire drawing direction in the crystal structure is reduced, and the uniformity of the crystal structure is improved. For this reason, when dynamic driving (for example, repeated bending) acts on the strand, strain is sequentially introduced (accumulated) in the crystal structure forming the strand, but the crystal structure has uniformity.
  • the introduced strain is uniformly distributed in the crystal structure, and an embrittlement region due to strain localization does not occur in the crystal structure. As a result, the generation of a microcrack that becomes the starting point of fatigue crack extension in the crystal structure is suppressed, and the fatigue resistance (bending resistance) is improved.
  • the number of breaks is 1,000,000 times (the average grain size A in the direction orthogonal to the drawing direction of the crystal grains 12 is 2 ⁇ m, and the average grain size B in the drawing direction of the crystal grains 12 is 20 ⁇ m).
  • the average particle size A is 2 ⁇ m and the average particle size B is 10 ⁇ m
  • the number of fractures is 2 million times
  • the number of times of fracture is 12 million times (average grain size).
  • the diameter A was 2 ⁇ m and the average particle diameter B was 20 ⁇ m.
  • the average particle diameter A was 2 ⁇ m and the average particle diameter B was 10 ⁇ m the number of breaks was 22 million.
  • the number of breaks is 2 million times (average particle size A is 2 ⁇ m, average particle size B is 20 ⁇ m). However, the number of breaks when the average particle size A is 2 ⁇ m and the average particle size B is 10 ⁇ m. Is 4 million times, and in the case of a copper-5 mass% silver-based alloy, the number of fractures has been 20 million times (average particle size A is 2 ⁇ m, average particle size B is 20 ⁇ m), but the average particle size A is 2 ⁇ m. When the average particle size B is 10 ⁇ m, the number of breaks is 40 million.
  • the accumulated equivalent strain epsilon N of the wire 11 is less than 4, in the process of wire is formed from a wire 11, not recrystallization noticeable in the crystal grains 12 constituting the crystal structure. Further, in the process of forming the strand from the wire 11, the portion along the direction orthogonal to the wire drawing direction of the crystal grains 12 is accompanied by a large processing in the direction orthogonal to the wire drawing direction (cross-sectional area reduction). Due to the reaction that the maximum length decreases due to compression deformation, the maximum length of the portion along the wire drawing direction of the crystal grains 12 tends to increase due to work drawing.
  • the length of the portion along the direction orthogonal to the drawing direction of the crystal grains 12 constituting the element wire is about 2 ⁇ m to 5 ⁇ m or less, and the length of the portion along the drawing direction of the crystal grains 12 The length exceeds about 10 ⁇ m and is about 25 ⁇ m or less, which causes a problem that a crystal structure including a fibrous crystal grown in the wire drawing direction is formed.
  • the cumulative equivalent strain ⁇ N introduced into the wire 11 is, for example, 4 or more and 20 or less, refinement of the crystal structure by recrystallization of the crystal grains 12 in the process of forming the strand from the wire 11, and the wire
  • the average grain size A in the direction perpendicular to the drawing direction of the crystal grains 12 constituting the crystal structure is 0.3 ⁇ m or more and 2 ⁇ m or less
  • the average grain diameter B in the drawing direction of the crystal grains 12 is 0.3 ⁇ m or more and 10 ⁇ m.
  • the upper limit value of the cumulative equivalent strain ⁇ N is set to 20 even if a cumulative equivalent strain ⁇ N exceeding 20 is introduced into the wire 11, the crystal grains 12 are proportional to the introduced cumulative equivalent strain ⁇ N. This is because miniaturization cannot be achieved.
  • the method for producing a microcrystalline metal conductor includes a melting step of melting a raw material (metal) of the microcrystalline metal conductor, and a casting for producing a wire 11 (an example of a material) having a predetermined shape from the molten metal. Process. Further, the method for manufacturing the microcrystalline metal conductor includes a strong processing step in which the wire 11 is subjected to a strong processing in which the cumulative equivalent strain is 4 or more, and a wire having a wire diameter of 50 to 120 ⁇ m from the wire 11 subjected to the strong processing.
  • the average grain size B in the longitudinal direction (drawing direction at the time of drawing) of the crystal grains 12 constituting the crystal structure forming the strand is 10 ⁇ m or less, and the longitudinal direction (drawing direction) And a wire drawing step for making the average particle size A in the direction orthogonal to 2) m or less. Details will be described below.
  • the cable is manufactured by twisting the manufactured strands to produce a stranded wire, applying an insulating resin coating to the stranded wire of a predetermined length, and combining and integrating the resin-coated stranded wires.
  • a predetermined amount of metal is put into a graphite crucible, and the metal is melted by high frequency induction heating.
  • the molten metal in the graphite crucible is agitated to achieve uniformity.
  • the molten metal in the graphite crucible is transferred to a container provided with a water-cooled graphite die, and the molten metal is passed through the graphite die and drawn outside, thereby performing continuous casting of the wire 11.
  • the continuous casting speed is 100 to 300 mm / min
  • the diameter of the wire 11 to be cast is 8 to 12 mm
  • the length is 30000 to 60000 mm.
  • a rectangular parallelepiped mold 14 in which a through hole 13 having a bending angle ⁇ of 90 degrees is formed is used to penetrate the mold 14.
  • the wire 11 is pushed from one side opening 15 of the hole 13 and discharged from the other side opening 16 of the through hole 13 provided in the side of the mold 14 (ECAP (Equal-Channel Angular Pressing) method).
  • ECAP Equal-Channel Angular Pressing
  • the wire 11 is strongly processed.
  • the inner diameter of the other-side opening 16 is set smaller than the inner diameter of the one-side opening 15 (for example, the opening cross-sectional area reduction rate is 1% or more and 20% or less). For this reason, the cross-sectional area reduction rate of the wire 11 is 1% or more and 20% or less before and after strong processing (same as before and after one processing).
  • the wire 11 is pushed into the through hole 13 (one side opening 15) in front of (above) the one side opening 15 of the through hole 13, as shown in FIGS.
  • This is performed by using a gripping means 19 having a pair of pressing portions 17 and 18 that are arranged and pressed and processed from both sides of the side of the wire 11 above the one side opening 15. That is, as shown in FIG. 4A, the central axis position of the one-side opening 15 and the central axis position of the wire 11 are matched, and the lower end of the wire 11 is directly above the one-side opening 15 of the through-hole 13. Be placed.
  • the dummy wire comes into contact with the terminal end of the wire 11 and is gripped.
  • a dummy wire is press-fitted into the through hole 13 using the means 19. Thereby, the wire 11 can be pushed out by the dummy wire, and the wire 11 can be taken out from the other opening 16 of the through hole 13.
  • the equivalent strain ⁇ 1 when the wire 11 passes through the through-hole 13 once is 0.5 to 1 It becomes.
  • the equivalent strain ⁇ 1 when the wire 11 passes through the through hole 13 once is not significantly affected by the arc angle ⁇ of the bent portion. Therefore, when the bending angle ⁇ is 90 degrees, P + Q can be approximated to 1.
  • the strain is 0.58). Therefore, by determining the number of times N that the wire 11 passes through the through-hole 13, it is possible to quantitatively easily evaluate the cumulative equivalent strain epsilon N of wires 11, the cumulative equivalent strain epsilon N of the wire 11 accurately Can be adjusted. When the cumulative equivalent strain of the wire 11 is 4 or more, the number N of times of passing through the through hole 13 is 7 or more.
  • FIG. 5 shows a gripping means 20 according to a modification.
  • the gripping means 20 is provided in the circumferential direction of the outer peripheral portion at different height positions in the vertical direction of the side surface of the wire 11 located in front (upward) of the one side opening 15 of the through-hole 13 formed in the upper portion of the mold 14. Abutting at different angular positions (for example, angular positions that divide the circumferential direction into four equal parts), the region above the one side opening 15 of the wire 11 is supported in a standing state with respect to the one side opening 15.
  • An upper holding portion 22 and 23 are provided.
  • the gripping means 20 is provided between the upper and lower holding portions 22 and 23 and arranged side by side in the vertical direction, and the outer periphery at different height positions on the side surfaces between the upper and lower holding portions 22 and 23 of the wire 11.
  • Each of which is provided with a pair of rolls 24 and 25 that respectively feed the wire 11 downward by rotating while pressing the opposing portions of each part from the outside in the radial direction, and having lower drive parts 26 and 27, respectively.
  • the axial center direction of the roll 24 serving as the pair of the upper drive unit 26 and the axial center direction of the roll 25 serving as the pair of the lower drive unit 27 intersect (for example, orthogonal).
  • the rolls 24 and 25 of the upper and lower drive units 26 and 27 are rotated.
  • the wire 11 moves downward, passes between the pair of rolls 25 of the lower drive unit 27, the front side of the wire 11 is supported by the lower holding unit 23, and the central axis position of the wire 11 is the through hole 13.
  • the lower end of the wire 11 is disposed immediately above the one-side opening 15 of the through hole 13 in a state where it coincides with the central axis position of the one-side opening 15.
  • the rolls 24 and 25 of the upper and lower drive units 26 and 27 are rotated, the front side of the wire 11 is gradually pushed into the through-hole 13. It protrudes from the other side opening 16 of the hole 13.
  • the rolls 24 of the upper and lower drive units 26 and 27 Therefore, the tip of the dummy wire is brought into contact with the terminal end of the wire 11, and the dummy wire is moved downward by the rolls 24 and 25 of the upper and lower drive units 26 and 27.
  • the wire 11 is pushed out by the dummy wire, and the wire 11 can pass through the through hole 13.
  • the drawing process includes a pre-drawing process (rough drawing) in which the wire 11 is reduced in diameter to be a fine line, and a finish drawing process in which a strand is formed from the thin line.
  • the pre-drawing process is performed in a range in which the cross-sectional area reduction rate of the wire 11 is 5 to 30% using, for example, a swaging machine.
  • the reason why the cross-sectional area reduction rate of the wire 11 is in the range of 5 to 30% is that when the cross-sectional area reduction rate is less than 5%, the burden of the finish drawing process for forming the wire from the thin wire becomes high. Since disconnection and surface roughness occur, it is not preferable.
  • the cross-sectional area reduction rate exceeds 30%, the diameter of the thin wire is too thin and handling becomes difficult, and the productivity (wire forming speed) decreases, which is not preferable.
  • the pre-drawing process may be performed after pre-heating the wire 11 that has been subjected to strong processing.
  • the preheating temperature is in the range of 1 to 50 hours in an inert gas atmosphere at a temperature 20 to 100 ° C. lower than the recrystallization temperature of the wire 11 that has been strongly processed.
  • the finish wire drawing process for forming the wire from the fine wire is performed by passing the fine wire through a wire drawing die cooled with a coolant (for example, oil), for example.
  • a coolant for example, oil
  • the degree of processing when forming a strand from a thin wire is in the range of 3-11.
  • the degree of processing is a value calculated by ln (S 0 / S 1 ), where S 0 is the cross-sectional area of the thin wire and S 1 is the cross-sectional area of the strand.
  • the crystal structure is refined by recrystallization of the crystal grains 12 in the process of forming the strands from the wires 11 via the fine wires, and the fine wires from the wires 11 are reduced.
  • the average grain size B in the longitudinal direction (drawing direction during wire drawing) of the crystal grains 12 constituting the crystal structure forming the strands is 10 ⁇ m or less and orthogonal to the longitudinal direction (drawing direction).
  • the average particle size A in the direction can be 2 ⁇ m or less.
  • the finish wire drawing treatment may be performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire.
  • fine wire heating By performing the fine wire heating, the recrystallization of the crystal grains constituting the fine lines is promoted, the crystal grains 12 are refined, and the strain introduced into the crystal grains is removed, and the fine lines are removed. It is possible to improve the extensibility (drawing property) of a fine wire required when a wire is formed.
  • the temperature of the fine wire heating is set lower than the recrystallization temperature by more than 70 ° C., the recrystallization is not promoted, the strain removal in the fine wire is insufficient, and the extensibility of the fine wire cannot be improved.
  • the temperature of the fine wire heating is set higher than the recrystallization temperature of ⁇ 10 ° C., the crystal structure constituting the fine wire is not preferable because grain growth occurs with recrystallization.
  • the formed wire may be finish-heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the wire.
  • recrystallization of the crystal grains 12 constituting the strands is promoted, and the average grain size B in the longitudinal direction (drawing direction) of the crystal grains 12 constituting the crystal structure forming the strands is 10 ⁇ m or less.
  • the average particle diameter A in the direction orthogonal to the longitudinal direction (drawing direction) can be efficiently adjusted to 2 ⁇ m or less.
  • the temperature of the finish heat treatment is set to be lower than the recrystallization temperature of the strand formed by die drawing by more than 70 ° C., the recrystallization is not promoted and the crystalline structure constituting the strand is not increased.
  • the temperature of the finish heat treatment is set higher than the recrystallization temperature of ⁇ 10 ° C.
  • the crystal structure constituting the strand causes grain growth along with recrystallization (that is, the crystal structure). Is not preferable).
  • an HPT (High-Pressure Torsion) method can also be used as a strong processing method.
  • HPT High-Pressure Torsion
  • ARB Accelulative Roll Bonding
  • a strongly processed material can be produced by cutting a wire from a laminated processed body by mechanical cutting or the like.
  • the microcrystalline metal conductor according to the second embodiment of the present invention introduces a cumulative equivalent strain of 4 or more at the time of wire drawing (an example of strong processing) for forming a strand having a wire diameter of 50 to 120 ⁇ m from a wire.
  • the average particle size in the longitudinal direction (drawing direction during drawing) is 0.3 ⁇ m or more and 10 ⁇ m or less, and the average particle size in the direction perpendicular to the longitudinal direction (drawing direction) is 0. It has a crystal structure composed of crystal grains of 3 ⁇ m or more and 2 ⁇ m or less, that is, does not include coarse fibrous crystals extending in the longitudinal direction, and has a fine crystal structure excellent in isotropic properties.
  • microcrystalline metal conductor according to the second embodiment strain localization is difficult to occur in the crystal structure even when repeated deformation is applied, and embrittlement is difficult to be induced. As a result, generation of fatigue cracks can be suppressed, and fatigue resistance characteristics (bending resistance) can be improved.
  • the method for producing a microcrystalline metal conductor according to the second embodiment includes a melting step of melting a raw material (metal) of the microcrystalline metal conductor, and a predetermined shape, for example, an outer diameter of 6 to 10 mm, from the molten metal.
  • the crystal structure of the strands is 0.3 to 10 ⁇ m in average length in the longitudinal direction (drawing direction during wire drawing) It is composed of crystal grains having an average grain size in the direction orthogonal to the direction (drawing direction) of 0.3 to 2 ⁇ m.
  • Example 1 A predetermined amount of 99.95% by mass of aluminum was put into a graphite crucible and stirred and melted at 720 ° C. by high-frequency induction heating (the melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
  • a die having an inner diameter of 10 mm on one side and an inner diameter of 9.8 mm on the other side and having a through hole bent at 90 degrees is attached to a press, and the one side opening formed in the die
  • strong processing by the ECAP method of pushing the wire at a pushing speed of about 200 mm / min and discharging it from the other side opening of the mold is repeated 3, 5, 7, and 9 times at room temperature, respectively. Cumulative equivalent strains of 2.9, 4.0, and 5.2 were introduced.
  • the inorganic lubricant for example, molybdenum disulfide
  • a recrystallization temperature is measured using a test piece taken from a 9.8 mm diameter wire that has been subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere Preheating was performed for 2 hours in (an example of an inert gas atmosphere). And the wire after a preheating shape
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 300 mm / min and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Inside was subjected to finishing heating for 4 hours to obtain a strand (drawing step).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain was 1.7, it was 20 ⁇ m
  • the cumulative equivalent strain was 2.9, it was 15 ⁇ m
  • the cumulative equivalent strain was 4.0, it was 10 ⁇ m
  • the cumulative equivalent strain was 5.2, it was 2 ⁇ m.
  • the electrical conductivity of the obtained strand was measured, the cable whose cross-sectional area is 0.2 mm ⁇ 2 > was produced from the strand, and the cable bending test was performed at normal temperature, and the frequency
  • Example 5 to 8 A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 1 to 4. Then, as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, and 5.2 were introduced into the obtained wires. Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heating temperature. Preheating was performed in a gas atmosphere for 2 hours.
  • the recrystallization temperature is measured using a test piece taken from the fine wire, the temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and the fine wire heating is performed for 2 hours in the nitrogen gas atmosphere. went.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 300 mm / min and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). .
  • the recrystallization temperature is measured using a test piece taken from the strand, and the temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and finish heating is performed for 1 hour in a nitrogen gas atmosphere. I went to get a strand.
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 1 shows the conductivity values and the number of cable breaks.
  • FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C.
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • Example 14 to 18 A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 9 to 13. In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and the obtained wires had a cumulative equivalent strain of 1.7, 2.9, 4.0, 4.6, and 5.2. Was introduced.
  • the recrystallization temperature was measured using a test piece taken from a strongly processed wire having a diameter of 9.8 mm, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. And preheating was performed for 2 hours in a nitrogen gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finishing heat treatment for 2 hours was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 1 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain is 1.7, it is 20 ⁇ m
  • the cumulative equivalent strain is 2.9, it is 15 ⁇ m
  • the cumulative equivalent strain is 4.0, it is 10 ⁇ m
  • the cumulative equivalent strain is 4.6, it is 6 ⁇ m
  • the cumulative equivalent strain is 5.2, it is 2 ⁇ m. It was.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C.
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is 20 ⁇ m when the cumulative equivalent strain is 1.7, 15 ⁇ m when the cumulative equivalent strain is 2.9, 10 ⁇ m when the cumulative equivalent strain is 4.0, 5 ⁇ m when the cumulative equivalent strain is 4.6, and 2 ⁇ m when the cumulative equivalent strain is 5.2. Met.
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 2 shows the conductivity values and the number of cable breaks.
  • FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C.
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 3 shows the conductivity values and the number of cable breaks.
  • FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the recrystallization temperature was measured using a test piece taken from a strongly processed wire having a diameter of 9.8 mm, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. And preheating was performed for 2 hours in a nitrogen gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the heating temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain was 1.7, it was 20 ⁇ m
  • the cumulative equivalent strain was 2.9, it was 15 ⁇ m
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks.
  • FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C.
  • the heating temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain was 1.7, it was 20 ⁇ m
  • the cumulative equivalent strain was 2.9, it was 15 ⁇ m
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks.
  • FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • Example 36 to 38 A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 32-35. Then, as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 4.0, and 5.2 were introduced into the obtained wires.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C.
  • the heating temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks.
  • FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the average grain size in the direction perpendicular to the wire drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m or less.
  • the average grain size in the wire drawing direction is 10 ⁇ m or less
  • the number of cable breaks is about twice as large as that when the average grain size in the wire drawing direction exceeds 10 ⁇ m. It was confirmed that there was a transition region in which the number of cable breaks increased rapidly when the average particle size in the wire drawing direction was between 15 ⁇ m and 10 ⁇ m. Further, as shown in FIGS.
  • the present invention has been described with reference to the embodiments. However, the present invention is not limited to the configurations described in the above-described embodiments, and is within the scope of the matters described in the claims. Other embodiments and modifications that can be considered in the above are also included. Further, the present invention includes a combination of components included in the present embodiment and other embodiments and modifications.
  • microcrystalline metal conductor and the manufacturing method thereof according to the present invention can be used particularly for cables that are repeatedly bent in industrial robots, consumer robots, automobile wiring, and the like. As a result, it is possible to provide a device or device having a longer lifetime.

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013206778A (ja) * 2012-03-29 2013-10-07 Yazaki Corp 金属線材及び電線
JP2014159609A (ja) * 2013-02-19 2014-09-04 Fujikura Ltd 銅合金体、その製造方法及び導電材
WO2018012481A1 (fr) * 2016-07-13 2018-01-18 古河電気工業株式会社 Matériau d'alliage d'aluminium, et élément conducteur d'électricité, élément de batterie, composant de fixation et composant structural le mettant en œuvre
WO2018012482A1 (fr) * 2016-07-13 2018-01-18 古河電気工業株式会社 Matériau d'alliage d'aluminium et élément conducteur d'électricité, élément de batterie, composant de fixation, composant à ressort et composant structural le mettant en œuvre
JP2018016877A (ja) * 2016-07-29 2018-02-01 国立大学法人富山大学 熱処理用のアルミニウム合金材及びその製造方法
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WO2025203607A1 (fr) * 2024-03-29 2025-10-02 株式会社Uacj Matériau de coulée en alliage d'aluminium et procédé de production d'un matériau de coulée en alliage d'aluminium

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721843A (ja) * 1993-06-30 1995-01-24 Hitachi Cable Ltd 耐屈曲性ケーブル
JPH0790430A (ja) * 1993-09-14 1995-04-04 Hitachi Cable Ltd 極細線用銅線，及びその製造方法
JPH07188813A (ja) * 1993-12-27 1995-07-25 Hitachi Cable Ltd 耐屈曲性銅合金
JPH07316705A (ja) * 1994-05-31 1995-12-05 Riyouka Massey Kk 配線材料
JPH09137244A (ja) * 1995-09-14 1997-05-27 Kenji Azuma アルミニウム合金の押出加工法及びそれにより得られる高強度、高靭性のアルミニウム合金材料
JPH09256084A (ja) * 1996-03-19 1997-09-30 Hitachi Cable Ltd 耐屈曲性銅合金線
JP2002102919A (ja) * 2000-09-28 2002-04-09 Hitachi Cable Ltd 微細結晶金属材の製造方法
JP2002356728A (ja) * 2001-03-27 2002-12-13 Nippon Mining & Metals Co Ltd 銅および銅合金とその製造方法
JP2004292875A (ja) * 2003-03-26 2004-10-21 Sumitomo Kinzoku Kozan Shindo Kk 結晶粒を微細化した７０／３０黄銅とその製造方法
JP2006169548A (ja) * 2004-12-13 2006-06-29 Dowa Mining Co Ltd 銅合金材料およびその製造法
JP2006299287A (ja) * 2005-04-15 2006-11-02 Nikko Kinzoku Kk 複相銅合金、ばね材及び箔体、並びに複相銅合金の製造方法
JP2007305566A (ja) * 2005-12-07 2007-11-22 Furukawa Electric Co Ltd:The 配線用電線導体、配線用電線、及びそれらの製造方法
JP2011040350A (ja) * 2009-08-18 2011-02-24 Yazaki Corp アルミニウム合金電線の製造方法
JP2011146352A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd Ｃｕ−Ａｇ合金線
WO2011105584A1 (fr) * 2010-02-26 2011-09-01 古河電気工業株式会社 Conducteur en alliage d'aluminium
WO2011105585A1 (fr) * 2010-02-26 2011-09-01 古河電気工業株式会社 Conducteur en alliage d'aluminium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4477295B2 (ja) * 2002-10-10 2010-06-09 古河電気工業株式会社 自動車ワイヤハーネス用アルミ電線
CN102695813B (zh) * 2009-10-30 2016-06-01 住友电气工业株式会社 铝合金线
EP2540850B1 (fr) * 2010-02-26 2017-11-15 Furukawa Electric Co., Ltd. Conducteur en alliage d'aluminium
JP5939530B2 (ja) * 2011-08-25 2016-06-22 古河電気工業株式会社 アルミニウム合金導体

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721843A (ja) * 1993-06-30 1995-01-24 Hitachi Cable Ltd 耐屈曲性ケーブル
JPH0790430A (ja) * 1993-09-14 1995-04-04 Hitachi Cable Ltd 極細線用銅線，及びその製造方法
JPH07188813A (ja) * 1993-12-27 1995-07-25 Hitachi Cable Ltd 耐屈曲性銅合金
JPH07316705A (ja) * 1994-05-31 1995-12-05 Riyouka Massey Kk 配線材料
JPH09137244A (ja) * 1995-09-14 1997-05-27 Kenji Azuma アルミニウム合金の押出加工法及びそれにより得られる高強度、高靭性のアルミニウム合金材料
JPH09256084A (ja) * 1996-03-19 1997-09-30 Hitachi Cable Ltd 耐屈曲性銅合金線
JP2002102919A (ja) * 2000-09-28 2002-04-09 Hitachi Cable Ltd 微細結晶金属材の製造方法
JP2002356728A (ja) * 2001-03-27 2002-12-13 Nippon Mining & Metals Co Ltd 銅および銅合金とその製造方法
JP2004292875A (ja) * 2003-03-26 2004-10-21 Sumitomo Kinzoku Kozan Shindo Kk 結晶粒を微細化した７０／３０黄銅とその製造方法
JP2006169548A (ja) * 2004-12-13 2006-06-29 Dowa Mining Co Ltd 銅合金材料およびその製造法
JP2006299287A (ja) * 2005-04-15 2006-11-02 Nikko Kinzoku Kk 複相銅合金、ばね材及び箔体、並びに複相銅合金の製造方法
JP2007305566A (ja) * 2005-12-07 2007-11-22 Furukawa Electric Co Ltd:The 配線用電線導体、配線用電線、及びそれらの製造方法
JP2011040350A (ja) * 2009-08-18 2011-02-24 Yazaki Corp アルミニウム合金電線の製造方法
JP2011146352A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd Ｃｕ−Ａｇ合金線
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WO2011105585A1 (fr) * 2010-02-26 2011-09-01 古河電気工業株式会社 Conducteur en alliage d'aluminium

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Publication number Priority date Publication date Assignee Title
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WO2018155531A1 (fr) * 2017-02-23 2018-08-30 古河電気工業株式会社 Matériau d'alliage d'aluminium et élément de fixation, élément structurel, élément de ressort, organe conducteur et organe de batterie utilisant le matériau d'alliage d'aluminium
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US10902966B2 (en) 2018-01-12 2021-01-26 Furukawa Electric Co., Ltd. Twisted wire conductor for insulated electrical wire, insulated electrical wire, cord and cable
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US11410787B2 (en) 2018-01-12 2022-08-09 Furukawa Electric Co., Ltd. Movable cable
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