ATE105445T1 - Transistorstruktur. - Google Patents

Transistorstruktur.

Info

Publication number
ATE105445T1
ATE105445T1 AT8989302069T AT89302069T ATE105445T1 AT E105445 T1 ATE105445 T1 AT E105445T1 AT 8989302069 T AT8989302069 T AT 8989302069T AT 89302069 T AT89302069 T AT 89302069T AT E105445 T1 ATE105445 T1 AT E105445T1
Authority
AT
Austria
Prior art keywords
heterostructure
doped layer
base region
transistor
transistor structure
Prior art date
Application number
AT8989302069T
Other languages
English (en)
Inventor
James D Plummer
Robert C Taft
Original Assignee
Univ Leland Stanford Junior
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Leland Stanford Junior filed Critical Univ Leland Stanford Junior
Application granted granted Critical
Publication of ATE105445T1 publication Critical patent/ATE105445T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/841—Vertical heterojunction BJTs having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
AT8989302069T 1988-03-04 1989-03-02 Transistorstruktur. ATE105445T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/164,260 US4825269A (en) 1988-03-04 1988-03-04 Double heterojunction inversion base transistor
EP89302069A EP0331482B1 (de) 1988-03-04 1989-03-02 Transistorstruktur

Publications (1)

Publication Number Publication Date
ATE105445T1 true ATE105445T1 (de) 1994-05-15

Family

ID=22593693

Family Applications (1)

Application Number Title Priority Date Filing Date
AT8989302069T ATE105445T1 (de) 1988-03-04 1989-03-02 Transistorstruktur.

Country Status (6)

Country Link
US (1) US4825269A (de)
EP (1) EP0331482B1 (de)
JP (1) JP2868780B2 (de)
KR (1) KR900013639A (de)
AT (1) ATE105445T1 (de)
DE (1) DE68915035T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2670118B2 (ja) 1988-12-10 1997-10-29 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5099299A (en) * 1990-06-15 1992-03-24 International Business Machines Corporation Modulation doped base heterojunction bipolar transistor
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
US5171697A (en) * 1991-06-28 1992-12-15 Texas Instruments Incorporated Method of forming multiple layer collector structure for bipolar transistors
FR2692721B1 (fr) * 1992-06-17 1995-06-30 France Telecom Procede de realisation de transistor bipolaire a heterojonction et transistor obtenu.
JP2778553B2 (ja) * 1995-09-29 1998-07-23 日本電気株式会社 半導体装置およびその製造方法
DE19912950B4 (de) * 1999-03-23 2006-05-24 Kasper, Erich, Prof. Dr.rer.nat. Halbleiterbauelement, mit drei aufeinander folgenden Schichten von wechselndem Dotiertyp integrierter Schaltkreis mit einem solchen Halbleiterbauelement und Verfahren zur Herstellung eines solchen Halbleiterbauelements

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2719464A1 (de) * 1977-04-30 1978-12-21 Erich Dr Kasper Verfahren zur herstellung von bipolaren hochfrequenztransistoren
US4180825A (en) * 1977-09-16 1979-12-25 Harris Corporation Heteroepitaxial deposition of GaP on silicon substrates
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPH0666318B2 (ja) * 1985-08-20 1994-08-24 富士通株式会社 ヘテロ接合バイポ−ラ半導体装置
US4771326A (en) * 1986-07-09 1988-09-13 Texas Instruments Incorporated Composition double heterojunction transistor

Also Published As

Publication number Publication date
KR900013639A (ko) 1990-09-06
US4825269A (en) 1989-04-25
DE68915035T2 (de) 1994-08-25
JPH029133A (ja) 1990-01-12
DE68915035D1 (de) 1994-06-09
JP2868780B2 (ja) 1999-03-10
EP0331482B1 (de) 1994-05-04
EP0331482A2 (de) 1989-09-06
EP0331482A3 (en) 1990-02-21

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Legal Events

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