ATE135496T1 - Dünnschicht-halbleiterbauelement - Google Patents

Dünnschicht-halbleiterbauelement

Info

Publication number
ATE135496T1
ATE135496T1 AT91302658T AT91302658T ATE135496T1 AT E135496 T1 ATE135496 T1 AT E135496T1 AT 91302658 T AT91302658 T AT 91302658T AT 91302658 T AT91302658 T AT 91302658T AT E135496 T1 ATE135496 T1 AT E135496T1
Authority
AT
Austria
Prior art keywords
thin film
film semiconductor
semiconductor component
layer
protective layer
Prior art date
Application number
AT91302658T
Other languages
English (en)
Inventor
Masato C O Canon Kabu Yamanobe
Takayuki C O Canon Kabus Ishii
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2078406A external-priority patent/JPH03278477A/ja
Priority claimed from JP2078403A external-priority patent/JPH03278437A/ja
Priority claimed from JP2078404A external-priority patent/JPH03278467A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE135496T1 publication Critical patent/ATE135496T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT91302658T 1990-03-27 1991-03-26 Dünnschicht-halbleiterbauelement ATE135496T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2078406A JPH03278477A (ja) 1990-03-27 1990-03-27 薄膜半導体装置及びこの薄膜半導体装置を用いた光電変換装置
JP2078403A JPH03278437A (ja) 1990-03-27 1990-03-27 薄膜半導体装置及びその製造方法
JP2078404A JPH03278467A (ja) 1990-03-27 1990-03-27 薄膜半導体装置

Publications (1)

Publication Number Publication Date
ATE135496T1 true ATE135496T1 (de) 1996-03-15

Family

ID=27302704

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91302658T ATE135496T1 (de) 1990-03-27 1991-03-26 Dünnschicht-halbleiterbauelement

Country Status (4)

Country Link
US (2) US5576555A (de)
EP (1) EP0449598B1 (de)
AT (1) ATE135496T1 (de)
DE (1) DE69117785T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
JPH09270519A (ja) * 1996-03-31 1997-10-14 Furontetsuku:Kk 薄膜トランジスタの製造方法
US6010923A (en) * 1997-03-31 2000-01-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region
US5834356A (en) * 1997-06-27 1998-11-10 Vlsi Technology, Inc. Method of making high resistive structures in salicided process semiconductor devices
TW400554B (en) * 1997-07-25 2000-08-01 United Microelectronics Corp The removing method for the thin film layer involved in the semiconductor device
US6130123A (en) 1998-06-30 2000-10-10 Intel Corporation Method for making a complementary metal gate electrode technology
US6166417A (en) 1998-06-30 2000-12-26 Intel Corporation Complementary metal gates and a process for implementation
EA003343B1 (ru) * 1999-08-02 2003-04-24 Касио Компьютер Ко., Лтд. Фотодатчик и система фотодатчиков
KR100776514B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP3990167B2 (ja) * 2002-03-04 2007-10-10 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の駆動方法およびその駆動方法を用いた液晶表示装置
JP4378137B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 読み出し回路、固体撮像装置、及びこれを用いたカメラシステム
JP5157161B2 (ja) 2006-12-27 2013-03-06 カシオ計算機株式会社 フォトセンサ
US7863112B2 (en) * 2008-01-08 2011-01-04 International Business Machines Corporation Method and structure to protect FETs from plasma damage during FEOL processing
JP5615605B2 (ja) * 2010-07-05 2014-10-29 三菱電機株式会社 Ｆｆｓモード液晶装置
US8679905B2 (en) * 2011-06-08 2014-03-25 Cbrite Inc. Metal oxide TFT with improved source/drain contacts
US9035932B2 (en) * 2012-08-31 2015-05-19 Apple Inc. Thermally compensated pixels for liquid crystal displays (LCDS)
US9201112B2 (en) 2013-12-09 2015-12-01 International Business Machines Corporation Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961964A (ja) * 1982-10-01 1984-04-09 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS60101940A (ja) * 1983-11-07 1985-06-06 Ricoh Co Ltd イメ−ジセンサ
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
US4882295A (en) * 1985-07-26 1989-11-21 Energy Conversion Devices, Inc. Method of making a double injection field effect transistor
JPS639157A (ja) * 1986-06-30 1988-01-14 Canon Inc 薄膜トランジスタの製造方法
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
US4843265A (en) * 1986-02-10 1989-06-27 Dallas Semiconductor Corporation Temperature compensated monolithic delay circuit
JPS62253785A (ja) * 1986-04-28 1987-11-05 Tokyo Univ 間欠的エツチング方法
US5308996A (en) * 1986-09-25 1994-05-03 Canon Kabushiki Kaisha TFT device
JP2702131B2 (ja) * 1987-06-12 1998-01-21 キヤノン株式会社 画像読取装置及び該装置を有する画像情報読取装置
JPH01137674A (ja) * 1987-11-25 1989-05-30 Matsushita Electric Ind Co Ltd 薄膜トランジスタ
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
GB2220792B (en) * 1988-07-13 1991-12-18 Seikosha Kk Silicon thin film transistor and method for producing the same
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
US5202572A (en) * 1988-09-21 1993-04-13 Fuji Xerox Co., Ltd. Thin film transistor
US4874459A (en) * 1988-10-17 1989-10-17 The Regents Of The University Of California Low damage-producing, anisotropic, chemically enhanced etching method and apparatus
EP0372821B1 (de) * 1988-11-30 1995-03-08 Nec Corporation Flüssigkristallanzeigetafel mit verminderten Pixeldefekten
US5150181A (en) * 1990-03-27 1992-09-22 Canon Kabushiki Kaisha Amorphous thin film semiconductor device with active and inactive layers
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts

Also Published As

Publication number Publication date
EP0449598B1 (de) 1996-03-13
DE69117785T2 (de) 1997-02-06
US5576555A (en) 1996-11-19
US5705411A (en) 1998-01-06
EP0449598A3 (en) 1992-01-08
EP0449598A2 (de) 1991-10-02
DE69117785D1 (de) 1996-04-18

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Legal Events

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