ATE178432T1 - Photovoltaische vorrichtung mit einem pin- übergang bestehend aus einer i(asi-ge)-schicht mit einem maximalen punkt für den ge-gehalt - Google Patents

Photovoltaische vorrichtung mit einem pin- übergang bestehend aus einer i(asi-ge)-schicht mit einem maximalen punkt für den ge-gehalt

Info

Publication number
ATE178432T1
ATE178432T1 AT93106028T AT93106028T ATE178432T1 AT E178432 T1 ATE178432 T1 AT E178432T1 AT 93106028 T AT93106028 T AT 93106028T AT 93106028 T AT93106028 T AT 93106028T AT E178432 T1 ATE178432 T1 AT E178432T1
Authority
AT
Austria
Prior art keywords
layer
semiconductor layer
type
type semiconductor
pin junction
Prior art date
Application number
AT93106028T
Other languages
English (en)
Inventor
Koichi Matsuda
Masafumi Sano
Tsutomu Murakami
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE178432T1 publication Critical patent/ATE178432T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1665—Amorphous semiconductors including only Group IV materials including Group IV-IV materials, e.g. SiGe or SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
AT93106028T 1992-04-15 1993-04-14 Photovoltaische vorrichtung mit einem pin- übergang bestehend aus einer i(asi-ge)-schicht mit einem maximalen punkt für den ge-gehalt ATE178432T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11984392 1992-04-15
JP5085105A JP2951146B2 (ja) 1992-04-15 1993-03-22 光起電力デバイス

Publications (1)

Publication Number Publication Date
ATE178432T1 true ATE178432T1 (de) 1999-04-15

Family

ID=26426131

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93106028T ATE178432T1 (de) 1992-04-15 1993-04-14 Photovoltaische vorrichtung mit einem pin- übergang bestehend aus einer i(asi-ge)-schicht mit einem maximalen punkt für den ge-gehalt

Country Status (8)

Country Link
US (1) US5324364A (de)
EP (1) EP0566972B1 (de)
JP (1) JP2951146B2 (de)
KR (1) KR0132552B1 (de)
AT (1) ATE178432T1 (de)
AU (1) AU656067B2 (de)
DE (1) DE69324183T2 (de)
ES (1) ES2131081T3 (de)

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EP0684652B1 (de) * 1994-05-19 2005-11-09 Canon Kabushiki Kaisha Photovoltaisches Bauelement, Elektrodenstruktur desselben und Herstellungsverfahren
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
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EP0827213A3 (de) 1996-08-28 1999-05-19 Canon Kabushiki Kaisha Photovoltaische Vorrichtung
JPH1154773A (ja) * 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US6521883B2 (en) * 2000-07-18 2003-02-18 Sanyo Electric Co., Ltd. Photovoltaic device
US6576112B2 (en) 2000-09-19 2003-06-10 Canon Kabushiki Kaisha Method of forming zinc oxide film and process for producing photovoltaic device using it
KR101050377B1 (ko) * 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7122736B2 (en) * 2001-08-16 2006-10-17 Midwest Research Institute Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
JP2004129483A (ja) * 2002-08-08 2004-04-22 Canon Inc 電力変換装置および発電装置
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置
JP2005171271A (ja) * 2003-12-08 2005-06-30 Canon Inc 堆積膜の形成方法、それを用いた光起電力素子の製造方法
TWI401809B (zh) * 2006-03-31 2013-07-11 Intematix Corp 具有增強之轉換效率之光伏打裝置及波長轉換器及其方法
US20070295383A1 (en) * 2006-03-31 2007-12-27 Intematix Corporation Wavelength-converting phosphors for enhancing the efficiency of a photovoltaic device
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
RU2485626C2 (ru) * 2007-12-21 2013-06-20 Квалкомм Мемс Текнолоджис, Инк. Многопереходные фотогальванические элементы
TWI514595B (zh) * 2008-09-24 2015-12-21 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
JP4764469B2 (ja) * 2008-10-31 2011-09-07 三菱重工業株式会社 光電変換装置及び光電変換装置の製造方法
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
JP2011222929A (ja) * 2010-03-23 2011-11-04 Toshiba Corp 不揮発性記憶装置及びその製造方法
WO2012066941A1 (ja) * 2010-11-16 2012-05-24 シャープ株式会社 半導体装置の製造方法
US8859321B2 (en) * 2011-01-31 2014-10-14 International Business Machines Corporation Mixed temperature deposition of thin film silicon tandem cells
CN102496646A (zh) * 2011-12-28 2012-06-13 普乐新能源（蚌埠）有限公司 光伏电池及其制备方法
US20140299189A1 (en) * 2013-04-04 2014-10-09 Electronics And Telecommunications Research Institute Solar cell
DE102013217653B4 (de) * 2013-09-04 2019-08-22 Ewe-Forschungszentrum Für Energietechnologie E. V. Photovoltaische Solarzelle und Mehrfachsolarzelle
KR20210060734A (ko) * 2019-11-18 2021-05-27 삼성디스플레이 주식회사 광 센서 및 이를 포함하는 전자 장치 및 이의 제조 방법
EP4517837A1 (de) * 2023-08-28 2025-03-05 ETA SA Manufacture Horlogère Suisse Photovoltaische zelle mit spezifischer anordnung von energiekollektoren und verfahren zur herstellung einer solchen zelle

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US2949498A (en) * 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
US4542256A (en) * 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
JPH02192771A (ja) * 1989-01-21 1990-07-30 Canon Inc 光起電力素子
US5002618A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
US5007971A (en) * 1989-01-21 1991-04-16 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film
US5002617A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
US5104455A (en) * 1990-01-09 1992-04-14 Sharp Kabushiki Kaisha Amorphous semiconductor solar cell
JP2719230B2 (ja) * 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
JP2918345B2 (ja) * 1991-02-20 1999-07-12 キヤノン株式会社 光起電力素子

Also Published As

Publication number Publication date
JPH0621494A (ja) 1994-01-28
US5324364A (en) 1994-06-28
EP0566972B1 (de) 1999-03-31
AU656067B2 (en) 1995-01-19
KR930022620A (ko) 1993-11-24
DE69324183D1 (de) 1999-05-06
JP2951146B2 (ja) 1999-09-20
ES2131081T3 (es) 1999-07-16
EP0566972A1 (de) 1993-10-27
AU3690293A (en) 1993-10-21
DE69324183T2 (de) 1999-10-28
KR0132552B1 (ko) 1998-04-16

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