ATE180103T1 - Vierschicht-überspannungsschutzdiode - Google Patents

Vierschicht-überspannungsschutzdiode

Info

Publication number
ATE180103T1
ATE180103T1 AT94250188T AT94250188T ATE180103T1 AT E180103 T1 ATE180103 T1 AT E180103T1 AT 94250188 T AT94250188 T AT 94250188T AT 94250188 T AT94250188 T AT 94250188T AT E180103 T1 ATE180103 T1 AT E180103T1
Authority
AT
Austria
Prior art keywords
doped
region
reduce
regions
overvoltage protection
Prior art date
Application number
AT94250188T
Other languages
English (en)
Inventor
Monty F Webb
Elmer L Turner
Original Assignee
Teccor Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teccor Electronics Inc filed Critical Teccor Electronics Inc
Application granted granted Critical
Publication of ATE180103T1 publication Critical patent/ATE180103T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Corsets Or Brassieres (AREA)
  • Ropes Or Cables (AREA)
  • Details Of Garments (AREA)
  • Emergency Protection Circuit Devices (AREA)
AT94250188T 1993-09-10 1994-07-25 Vierschicht-überspannungsschutzdiode ATE180103T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/119,812 US5479031A (en) 1993-09-10 1993-09-10 Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value

Publications (1)

Publication Number Publication Date
ATE180103T1 true ATE180103T1 (de) 1999-05-15

Family

ID=22386557

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94250188T ATE180103T1 (de) 1993-09-10 1994-07-25 Vierschicht-überspannungsschutzdiode

Country Status (6)

Country Link
US (2) US5479031A (de)
EP (1) EP0645823B1 (de)
JP (1) JP2967327B2 (de)
AT (1) ATE180103T1 (de)
DE (1) DE69418409T2 (de)
DK (1) DK0645823T3 (de)

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DE19821240C1 (de) * 1998-05-12 1999-08-12 Siemens Ag Abschaltbarer Thyristor
US6531717B1 (en) 1999-03-01 2003-03-11 Teccor Electronics, L.P. Very low voltage actuated thyristor with centrally-located offset buried region
US6084253A (en) * 1999-03-01 2000-07-04 Teccor Electronics, Lp Low voltage four-layer device with offset buried region
US6956248B2 (en) 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance
US6407901B1 (en) * 1999-04-19 2002-06-18 Teccor Electronics, Lp Semiconductor device providing overvoltage and overcurrent protection for a line
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GB0108795D0 (en) * 2001-04-07 2001-05-30 Power Innovations Ltd Overvoltage protection device
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US6862162B2 (en) * 2003-04-23 2005-03-01 Teccor Electronics, Lp Thyristor circuit providing overcurrent protection to a low impedance load
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US7129144B2 (en) * 2004-04-30 2006-10-31 Lite-On Semiconductor Corp. Overvoltage protection device and manufacturing process for the same
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CN101595769B (zh) * 2005-02-16 2011-09-14 三米拉-惜爱公司 印刷电路板的嵌入式瞬时保护的选择性沉积
US9781830B2 (en) 2005-03-04 2017-10-03 Sanmina Corporation Simultaneous and selective wide gap partitioning of via structures using plating resist
TWI389205B (zh) * 2005-03-04 2013-03-11 Sanmina Sci Corp 使用抗鍍層分隔介層結構
CN100426507C (zh) * 2006-05-12 2008-10-15 金国平 一种低电容半导体过压保护器芯片
US7755102B2 (en) * 2006-10-03 2010-07-13 Vishay General Semiconductor Llc High breakdown voltage diode and method of forming same
US7560355B2 (en) 2006-10-24 2009-07-14 Vishay General Semiconductor Llc Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same
US7638816B2 (en) * 2007-08-28 2009-12-29 Littelfuse, Inc. Epitaxial surge protection device
US7943959B2 (en) * 2007-08-28 2011-05-17 Littelfuse, Inc. Low capacitance semiconductor device
US8451576B2 (en) * 2008-05-30 2013-05-28 Littelfuse, Inc. SCR circuit for protecting central office end of telephone line
US20090296300A1 (en) * 2008-05-30 2009-12-03 Casey Kelly C SCR circuit for protecting customer end of telephone line
CN101587907B (zh) * 2009-04-29 2011-07-20 启东市捷捷微电子有限公司 一种低结电容过压保护晶闸管器件芯片的生产方法
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
FR2969825B1 (fr) 2010-12-23 2013-07-12 St Microelectronics Tours Sas Composant vertical bidirectionnel a double sillonnage
FR2969823B1 (fr) * 2010-12-23 2013-09-20 St Microelectronics Tours Sas Diode de shockley bidirectionnelle de type mesa
FR2969824B1 (fr) 2010-12-23 2013-09-20 St Microelectronics Tours Sas Diode de shockley bidirectionnelle a mesa prolonge
US9105682B2 (en) * 2011-02-28 2015-08-11 Infineon Technologies Austria Ag Semiconductor component with improved dynamic behavior
CN102683396B (zh) * 2012-04-20 2016-02-03 谢可勋 具有过压保护的半导体器件及基于此器件的双向极性器件
CN103426921B (zh) * 2012-05-17 2016-08-03 敦南科技股份有限公司 晶闸管元件的制造方法
CN103633130A (zh) * 2013-12-24 2014-03-12 江苏东光微电子股份有限公司 超低电容固体放电管
CN110690269B (zh) * 2019-10-09 2023-08-11 上海韦尔半导体股份有限公司 一种双向晶闸管及电子产品
CN113314594B (zh) * 2021-06-25 2025-07-22 马鞍山市槟城电子有限公司 一种半导体放电管及其制作方法、过电压保护装置
CN118610273B (zh) * 2024-08-07 2024-10-18 芯联先锋集成电路制造(绍兴)有限公司 稳压二极管及其制备方法、半导体集成结构

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Also Published As

Publication number Publication date
DK0645823T3 (da) 1999-11-15
JPH07307458A (ja) 1995-11-21
US5479031A (en) 1995-12-26
EP0645823B1 (de) 1999-05-12
EP0645823A1 (de) 1995-03-29
JP2967327B2 (ja) 1999-10-25
US5516705A (en) 1996-05-14
DE69418409T2 (de) 1999-09-16
DE69418409D1 (de) 1999-06-17

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee