ATE195036T1 - Verfahren zur herstellung von dioden zum schutz gegen elektrostatische entladungen - Google Patents
Verfahren zur herstellung von dioden zum schutz gegen elektrostatische entladungenInfo
- Publication number
- ATE195036T1 ATE195036T1 AT93104818T AT93104818T ATE195036T1 AT E195036 T1 ATE195036 T1 AT E195036T1 AT 93104818 T AT93104818 T AT 93104818T AT 93104818 T AT93104818 T AT 93104818T AT E195036 T1 ATE195036 T1 AT E195036T1
- Authority
- AT
- Austria
- Prior art keywords
- diodes
- protection against
- electrostatic discharge
- against electrostatic
- producing diodes
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/864,933 US5272097A (en) | 1992-04-07 | 1992-04-07 | Method for fabricating diodes for electrostatic discharge protection and voltage references |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE195036T1 true ATE195036T1 (de) | 2000-08-15 |
Family
ID=25344358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT93104818T ATE195036T1 (de) | 1992-04-07 | 1993-03-24 | Verfahren zur herstellung von dioden zum schutz gegen elektrostatische entladungen |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5272097A (de) |
| EP (1) | EP0564897B1 (de) |
| JP (1) | JPH06125048A (de) |
| KR (1) | KR930022547A (de) |
| AT (1) | ATE195036T1 (de) |
| CA (1) | CA2092050A1 (de) |
| DE (1) | DE69329081T2 (de) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5416351A (en) * | 1991-10-30 | 1995-05-16 | Harris Corporation | Electrostatic discharge protection |
| US5591661A (en) * | 1992-04-07 | 1997-01-07 | Shiota; Philip | Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures |
| EP0656152A1 (de) * | 1992-08-14 | 1995-06-07 | International Business Machines Corporation | Mos-bauteil mit einem schutz gegen elektrostatische entladungen |
| JP3456242B2 (ja) * | 1993-01-07 | 2003-10-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| US5477414A (en) * | 1993-05-03 | 1995-12-19 | Xilinx, Inc. | ESD protection circuit |
| US5452245A (en) * | 1993-09-07 | 1995-09-19 | Motorola, Inc. | Memory efficient gate array cell |
| US5616943A (en) * | 1993-09-29 | 1997-04-01 | At&T Global Information Solutions Company | Electrostatic discharge protection system for mixed voltage application specific integrated circuit design |
| US5374565A (en) * | 1993-10-22 | 1994-12-20 | United Microelectronics Corporation | Method for ESD protection improvement |
| CA2115230A1 (en) * | 1994-02-08 | 1995-08-09 | Jonathan H. Orchard-Webb | Esd protection circuit |
| JPH07312424A (ja) * | 1994-05-18 | 1995-11-28 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
| US5416038A (en) * | 1994-05-25 | 1995-05-16 | United Microelectronics Corporation | Method for producing semiconductor device with two different threshold voltages |
| DE4423591C2 (de) * | 1994-07-06 | 1996-08-29 | Itt Ind Gmbh Deutsche | Schutzstruktur für integrierte Schaltungen |
| EP0700089A1 (de) * | 1994-08-19 | 1996-03-06 | STMicroelectronics S.r.l. | Schutzanordnung gegen elektrostatische Entladungen an den Eingangs-/Ausgangsanschlüssen einer integrierten MOS-Schaltung |
| US5517049A (en) * | 1994-09-30 | 1996-05-14 | Vlsi Technology, Inc. | CMOS output buffer with enhanced ESD resistance |
| US5629544A (en) * | 1995-04-25 | 1997-05-13 | International Business Machines Corporation | Semiconductor diode with silicide films and trench isolation |
| US5811869A (en) | 1996-01-04 | 1998-09-22 | Micron Technology, Inc. | Laser antifuse using gate capacitor |
| US6750091B1 (en) * | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
| WO1997032340A1 (en) | 1996-03-01 | 1997-09-04 | Micron Technology, Inc. | Novel vertical diode structures with low series resistance |
| US5674761A (en) * | 1996-05-02 | 1997-10-07 | Etron Technology, Inc. | Method of making ESD protection device structure for low supply voltage applications |
| US5742555A (en) | 1996-08-20 | 1998-04-21 | Micron Technology, Inc. | Method of anti-fuse repair |
| US5781388A (en) * | 1996-09-03 | 1998-07-14 | Motorola, Inc. | Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method therefor |
| TW307915B (en) * | 1996-11-07 | 1997-06-11 | Winbond Electronics Corp | Electrostatic discharge protection circuit |
| EP0859456A1 (de) * | 1997-02-14 | 1998-08-19 | Koninklijke Philips Electronics N.V. | Steuerschaltung für einen Elektromotor |
| US5716880A (en) * | 1997-02-20 | 1998-02-10 | Chartered Semiconductor Manufacturing Pte Ltd. | Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation |
| JP2900908B2 (ja) * | 1997-03-31 | 1999-06-02 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6171893B1 (en) * | 1997-12-23 | 2001-01-09 | Texas Instruments - Acer Incorporated | Method for forming self-aligned silicided MOS transistors with ESD protection improvement |
| US5920774A (en) * | 1998-02-17 | 1999-07-06 | Texas Instruments - Acer Incorporate | Method to fabricate short-channel MOSFETS with an improvement in ESD resistance |
| US5991135A (en) * | 1998-05-11 | 1999-11-23 | Vlsi Technology, Inc. | System including ESD protection |
| US6137143A (en) * | 1998-06-30 | 2000-10-24 | Intel Corporation | Diode and transistor design for high speed I/O |
| US6046087A (en) * | 1999-02-10 | 2000-04-04 | Vanguard International Semiconductor Corporation | Fabrication of ESD protection device using a gate as a silicide blocking mask for a drain region |
| US6836000B1 (en) * | 2000-03-01 | 2004-12-28 | Micron Technology, Inc. | Antifuse structure and method of use |
| US6768616B2 (en) | 2001-03-16 | 2004-07-27 | Sarnoff Corporation | Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies |
| US7589944B2 (en) * | 2001-03-16 | 2009-09-15 | Sofics Bvba | Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies |
| JP2002305254A (ja) * | 2001-04-05 | 2002-10-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6900085B2 (en) | 2001-06-26 | 2005-05-31 | Advanced Micro Devices, Inc. | ESD implant following spacer deposition |
| US6775116B2 (en) * | 2001-11-01 | 2004-08-10 | Agilent Technologies, Inc. | Method and apparatus for preventing buffers from being damaged by electrical charges collected on lines connected to the buffers |
| CN100369269C (zh) * | 2003-12-10 | 2008-02-13 | 上海华虹Nec电子有限公司 | 嵌位二极管结构（三） |
| US7709896B2 (en) * | 2006-03-08 | 2010-05-04 | Infineon Technologies Ag | ESD protection device and method |
| TW200824093A (en) * | 2006-11-17 | 2008-06-01 | Realtek Semiconductor Corp | Metal oxide semiconductor component having voltage regulation and electrostatic discharge protection and the manufacturing method thereof |
| CN101527313B (zh) * | 2008-03-07 | 2012-03-21 | 瑞昱半导体股份有限公司 | 金属氧化物半导体元件及其制造方法 |
| TWI661530B (zh) * | 2018-02-13 | 2019-06-01 | 力晶積成電子製造股份有限公司 | 靜電放電保護元件 |
| JP2021022666A (ja) | 2019-07-29 | 2021-02-18 | セイコーエプソン株式会社 | 静電気保護回路 |
| JP2021022687A (ja) | 2019-07-30 | 2021-02-18 | セイコーエプソン株式会社 | 静電気保護回路 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2015815B2 (de) * | 1969-04-21 | 1976-06-24 | Rca Corp., New York, N.Y. (V.St.A.) | Schutzschaltung fuer einen integrierten schaltkreis |
| US3667009A (en) * | 1970-12-28 | 1972-05-30 | Motorola Inc | Complementary metal oxide semiconductor gate protection diode |
| US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
| JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
| US4366522A (en) * | 1979-12-10 | 1982-12-28 | Reliance Electric Company | Self-snubbing bipolar/field effect (biofet) switching circuits and method |
| US4312680A (en) * | 1980-03-31 | 1982-01-26 | Rca Corporation | Method of manufacturing submicron channel transistors |
| JPS577151A (en) * | 1980-06-17 | 1982-01-14 | Nec Corp | Monolithic ic circuit |
| IT1150062B (it) * | 1980-11-19 | 1986-12-10 | Ates Componenti Elettron | Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione |
| GB2090741B (en) * | 1981-01-14 | 1985-11-20 | Craig Med Prod Ltd | Female incontinence device |
| US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
| US4476184A (en) * | 1983-08-09 | 1984-10-09 | The Boeing Company | Thermally stable polysulfone compositions for composite structures |
| US4677735A (en) * | 1984-05-24 | 1987-07-07 | Texas Instruments Incorporated | Method of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer |
| JPS61229347A (ja) * | 1985-04-03 | 1986-10-13 | Nec Corp | 集積回路装置 |
| US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
| US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
| JPH0666402B2 (ja) * | 1985-12-12 | 1994-08-24 | 三菱電機株式会社 | 半導体集積回路装置の入力保護回路 |
| JPH0693497B2 (ja) * | 1986-07-30 | 1994-11-16 | 日本電気株式会社 | 相補型ｍｉｓ集積回路 |
| IT1213411B (it) * | 1986-12-17 | 1989-12-20 | Sgs Microelettronica Spa | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
| US4786955A (en) * | 1987-02-24 | 1988-11-22 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
| JP2559397B2 (ja) * | 1987-03-16 | 1996-12-04 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
| JPS6421055A (en) * | 1987-07-17 | 1989-01-24 | Kobe Steel Ltd | Production of plated steel stock excellent in adhesion |
| US5182621A (en) * | 1988-06-14 | 1993-01-26 | Nec Corporation | Input protection circuit for analog/digital converting semiconductor |
| US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
| JP2513010B2 (ja) * | 1988-12-27 | 1996-07-03 | 日本電気株式会社 | 半導体集積回路の入力保護装置 |
| US5124877A (en) * | 1989-07-18 | 1992-06-23 | Gazelle Microcircuits, Inc. | Structure for providing electrostatic discharge protection |
| JPH0393265A (ja) * | 1989-09-06 | 1991-04-18 | Nissan Motor Co Ltd | 半導体集積回路 |
| JPH0734476B2 (ja) * | 1989-10-23 | 1995-04-12 | 三菱電機株式会社 | 半導体集積回路 |
| KR950000141B1 (ko) * | 1990-04-03 | 1995-01-10 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체 장치 및 그 제조방법 |
| US5182220A (en) * | 1992-04-02 | 1993-01-26 | United Microelectronics Corporation | CMOS on-chip ESD protection circuit and semiconductor structure |
-
1992
- 1992-04-07 US US07/864,933 patent/US5272097A/en not_active Expired - Lifetime
-
1993
- 1993-03-19 CA CA002092050A patent/CA2092050A1/en not_active Abandoned
- 1993-03-24 DE DE69329081T patent/DE69329081T2/de not_active Expired - Lifetime
- 1993-03-24 EP EP93104818A patent/EP0564897B1/de not_active Expired - Lifetime
- 1993-03-24 AT AT93104818T patent/ATE195036T1/de not_active IP Right Cessation
- 1993-03-31 KR KR1019930005345A patent/KR930022547A/ko not_active Withdrawn
- 1993-04-07 JP JP5106158A patent/JPH06125048A/ja active Pending
- 1993-08-20 US US08/093,074 patent/US5426322A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5426322A (en) | 1995-06-20 |
| DE69329081T2 (de) | 2001-03-22 |
| DE69329081D1 (de) | 2000-08-31 |
| CA2092050A1 (en) | 1993-10-08 |
| KR930022547A (ko) | 1993-11-24 |
| EP0564897B1 (de) | 2000-07-26 |
| EP0564897A1 (de) | 1993-10-13 |
| US5272097A (en) | 1993-12-21 |
| JPH06125048A (ja) | 1994-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE195036T1 (de) | Verfahren zur herstellung von dioden zum schutz gegen elektrostatische entladungen | |
| DE69404883D1 (de) | Verfahren zur Herstellung von sanften, ungekreppten, durchblasgetrockneten Blättern | |
| ATE126177T1 (de) | Verfahren zur herstellung eines koronaentladungsapparates. | |
| ATE359994T1 (de) | Verfahren zur herstellung von oxazolidinonen | |
| EP0628992A3 (de) | Verfahren zur Herstellung von halbleitenden Wafern. | |
| DE69431770D1 (de) | Verfahren zur Herstellung von einem Silizium auf Isolator Halbleiterbauelement | |
| BR9612358B1 (pt) | composição e processo de fabricação de uma composição. | |
| ATE229057T1 (de) | Wasserbasierende organopolysiloxanhaltige zusammensetzungen, verfahren zu deren herstellung und deren verwendung | |
| ATE218576T1 (de) | Phosphohalohydrine, verfahren zu deren herstellung und verwendungen | |
| ATE220416T1 (de) | Organopolysiloxanhaltige zusammensetzungen auf wasserbasis, verfahren zu deren herstellung sowie deren verwendung | |
| MX9302214A (es) | Derivados de taxol y proceso para su preparacion | |
| DE69224453D1 (de) | Verfahren zur Herstellung von einem LDD-MOSFET | |
| ES2189851T3 (es) | Copolimero tribloque polisiloxano-polioxietileno-polioxipropileno y composiciones antiespumantes que contienen los mismos. | |
| DE69408551D1 (de) | Verfahren zur Herstellung von bemaltem Silikon-Elastomer | |
| ATA182898A (de) | Verfahren zur verbesserung der mucoadhäsion von polymeren sowie deren herstellung und verwendung | |
| DE69308664D1 (de) | Verfahren zur Herstellung von Silikonemulsionen | |
| PT97796A (pt) | Processo para a preparacao de piperidinas substituidas | |
| ATE171562T1 (de) | Elektronenquelle und bilderzeugungsvorrichtung und verfahren zur herstellung | |
| PT88932A (pt) | Processo para a preparacao de silica para composicoes dentifricas compativel,designadamente,com o zinco | |
| DE69429243D1 (de) | Elektrode zur herstellung von plasma und verfahren zur herstellung der elektrode | |
| ATE229970T1 (de) | Verfahren zur herstellung von mometason furoat | |
| ATE140925T1 (de) | Neues verfahren zur herstellung von 6alpha, 9alphadifluoro-sterioden und zwischenprodukte davon | |
| ATE154008T1 (de) | Lacton-verbindung und verfahren zu ihrer herstellung | |
| DE69432176D1 (de) | Verfahren zur herstellung von hiv protease inhibitoren | |
| DE69328043D1 (de) | Verbessertes Verfahren zur Herstellung von 1,3-Butylenglykol |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |