ATE247727T1 - Vorrichtung zur anodischen oxidation und verfahren und poröses substrat - Google Patents

Vorrichtung zur anodischen oxidation und verfahren und poröses substrat

Info

Publication number
ATE247727T1
ATE247727T1 AT98310455T AT98310455T ATE247727T1 AT E247727 T1 ATE247727 T1 AT E247727T1 AT 98310455 T AT98310455 T AT 98310455T AT 98310455 T AT98310455 T AT 98310455T AT E247727 T1 ATE247727 T1 AT E247727T1
Authority
AT
Austria
Prior art keywords
process tank
opening
porous substrate
anodizing
anodic oxidation
Prior art date
Application number
AT98310455T
Other languages
English (en)
Inventor
Satoshi Matsumura
Kenji Yamagata
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE247727T1 publication Critical patent/ATE247727T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/005—Apparatus specially adapted for electrolytic conversion coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1924—Preparing SOI wafers with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT98310455T 1997-12-26 1998-12-18 Vorrichtung zur anodischen oxidation und verfahren und poröses substrat ATE247727T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36101397A JP3413090B2 (ja) 1997-12-26 1997-12-26 陽極化成装置及び陽極化成処理方法

Publications (1)

Publication Number Publication Date
ATE247727T1 true ATE247727T1 (de) 2003-09-15

Family

ID=18471827

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98310455T ATE247727T1 (de) 1997-12-26 1998-12-18 Vorrichtung zur anodischen oxidation und verfahren und poröses substrat

Country Status (10)

Country Link
US (1) US6258240B1 (de)
EP (1) EP0926269B1 (de)
JP (1) JP3413090B2 (de)
KR (1) KR100369731B1 (de)
CN (1) CN1092720C (de)
AT (1) ATE247727T1 (de)
AU (1) AU741464B2 (de)
DE (1) DE69817308T2 (de)
SG (1) SG71181A1 (de)
TW (1) TW540116B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277478A (ja) * 1999-03-25 2000-10-06 Canon Inc 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法
KR100453454B1 (ko) * 2001-01-09 2004-10-15 텔레포스 주식회사 양극화 반응 장치 및 단위 양극화 반응기
US20040124088A1 (en) * 2002-12-26 2004-07-01 Canon Kabushiki Kaisha Processing apparatus
KR100854576B1 (ko) * 2007-05-16 2008-08-26 주식회사 동부하이텍 반도체 소자의 세정 장치 및 반도체 소자의 세정 방법
KR100897259B1 (ko) * 2007-10-24 2009-05-14 공주대학교 산학협력단 다중조건 다공질 규소층의 제작 방법
JP5908266B2 (ja) * 2011-11-30 2016-04-26 株式会社Ｓｃｒｅｅｎホールディングス 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ
WO2016094271A1 (en) * 2014-12-10 2016-06-16 Applied Materials, Inc. System and method for all wrap around porous silicon formation
JPWO2024219268A1 (de) * 2023-04-18 2024-10-24

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US4069121A (en) * 1975-06-27 1978-01-17 Thomson-Csf Method for producing microscopic passages in a semiconductor body for electron-multiplication applications
JPS57126998A (en) * 1981-01-28 1982-08-06 Mishima Kosan Co Ltd Plating apparatus
JPS6094737A (ja) 1983-10-28 1985-05-27 Matsushita Electric Works Ltd 半導体装置の製法
FR2615036B1 (fr) 1987-05-05 1989-08-18 France Etat Machine pour la fabrication de silicium poreux
JP2608351B2 (ja) 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
JP2734269B2 (ja) * 1991-12-26 1998-03-30 日本電気株式会社 半導体製造装置
JPH0613366A (ja) 1992-04-03 1994-01-21 Internatl Business Mach Corp <Ibm> 多孔性シリコン膜およびデバイスを作成するための浸漬走査方法およびシステム
JPH0631488A (ja) * 1992-07-14 1994-02-08 Matsushita Electric Ind Co Ltd 溶接用位置決め治具
JP3201875B2 (ja) 1993-04-27 2001-08-27 キヤノン株式会社 陽極化成装置及び陽極化成法
DE69312636T2 (de) 1992-11-09 1998-02-05 Canon Kk Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat
JP3416190B2 (ja) 1993-03-23 2003-06-16 キヤノン株式会社 陽極化成装置及び陽極化成方法
JPH06338631A (ja) 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
JPH0837173A (ja) 1994-07-22 1996-02-06 Canon Inc 化成装置
JP3376258B2 (ja) 1996-11-28 2003-02-10 キヤノン株式会社 陽極化成装置及びそれに関連する装置及び方法

Also Published As

Publication number Publication date
EP0926269A2 (de) 1999-06-30
AU9818398A (en) 1999-07-15
AU741464B2 (en) 2001-11-29
JP3413090B2 (ja) 2003-06-03
JPH11195640A (ja) 1999-07-21
SG71181A1 (en) 2000-03-21
TW540116B (en) 2003-07-01
DE69817308T2 (de) 2004-06-17
US6258240B1 (en) 2001-07-10
EP0926269A3 (de) 2000-05-31
CN1092720C (zh) 2002-10-16
KR19990063513A (ko) 1999-07-26
EP0926269B1 (de) 2003-08-20
CN1227284A (zh) 1999-09-01
KR100369731B1 (ko) 2003-03-17
DE69817308D1 (de) 2003-09-25

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