ATE291278T1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents

Verfahren zur herstellung eines halbleiterbauelements

Info

Publication number
ATE291278T1
ATE291278T1 AT02779855T AT02779855T ATE291278T1 AT E291278 T1 ATE291278 T1 AT E291278T1 AT 02779855 T AT02779855 T AT 02779855T AT 02779855 T AT02779855 T AT 02779855T AT E291278 T1 ATE291278 T1 AT E291278T1
Authority
AT
Austria
Prior art keywords
producing
semiconductor component
layers
laser device
lasers
Prior art date
Application number
AT02779855T
Other languages
English (en)
Inventor
James O'gorman
Original Assignee
Eblana Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eblana Photonics Ltd filed Critical Eblana Photonics Ltd
Application granted granted Critical
Publication of ATE291278T1 publication Critical patent/ATE291278T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
    • G02B6/4221—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements involving a visual detection of the position of the elements, e.g. by using a microscope or a camera
    • G02B6/4224—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements involving a visual detection of the position of the elements, e.g. by using a microscope or a camera using visual alignment markings, e.g. index methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

Landscapes

  • Semiconductor Lasers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Glass Compositions (AREA)
AT02779855T 2001-10-11 2002-10-07 Verfahren zur herstellung eines halbleiterbauelements ATE291278T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0124427.6A GB0124427D0 (en) 2001-10-11 2001-10-11 A method of manufacturing a semiconductor device
PCT/IE2002/000141 WO2003044871A1 (en) 2001-10-11 2002-10-07 A method of manufacturing a semiconductor device

Publications (1)

Publication Number Publication Date
ATE291278T1 true ATE291278T1 (de) 2005-04-15

Family

ID=9923645

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02779855T ATE291278T1 (de) 2001-10-11 2002-10-07 Verfahren zur herstellung eines halbleiterbauelements

Country Status (8)

Country Link
US (1) US7083994B2 (de)
EP (1) EP1446841B1 (de)
JP (1) JP2005510089A (de)
AT (1) ATE291278T1 (de)
AU (1) AU2002343185A1 (de)
DE (1) DE60203322T2 (de)
GB (1) GB0124427D0 (de)
WO (1) WO2003044871A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105207053B (zh) 2005-02-18 2019-06-04 镁可微波技术有限公司 高可靠性的蚀刻小面光子器件
IES20050587A2 (en) * 2005-09-08 2007-02-21 Eblana Photonics Ltd Multi-stripe laser diode designs which exhibit a high degree of manafacturability
JP4963060B2 (ja) * 2005-11-30 2012-06-27 シャープ株式会社 窒化物系半導体レーザ素子及びその製造方法
US7615404B2 (en) * 2006-10-31 2009-11-10 Intel Corporation High-contrast laser mark on substrate surfaces
DE102009056387B9 (de) 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
US8628988B2 (en) * 2011-12-21 2014-01-14 Emcore Corporation Conformal metallization process for the fabrication of semiconductor laser devices
US9230815B2 (en) * 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
US10490971B2 (en) 2017-06-09 2019-11-26 International Business Machines Corporation Self-alignment features for III-V ridge process and angled facet die
GB202103138D0 (en) * 2021-03-05 2021-04-21 Sivers Photonics Ltd Photonic device with fiducial marks for alignment of an optical component
CN116110827A (zh) * 2023-01-09 2023-05-12 武汉锐科光纤激光技术股份有限公司 巴条裂片方法、装置、计算机设备及计算机可读存储介质

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239481A (ja) * 1988-07-28 1990-02-08 Seiko Epson Corp 半導体レーザ製造方法
JPH04262589A (ja) * 1991-02-15 1992-09-17 Nec Kagoshima Ltd 光半導体装置の製造方法
US5259925A (en) * 1992-06-05 1993-11-09 Mcdonnell Douglas Corporation Method of cleaning a plurality of semiconductor devices
DE69204828T2 (de) * 1992-06-09 1996-05-02 Ibm Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.
JPH0864906A (ja) * 1994-08-24 1996-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法
JP3653150B2 (ja) * 1995-11-21 2005-05-25 三菱電機株式会社 半導体レーザチップ及びその製造方法
US5790737A (en) * 1995-11-21 1998-08-04 Mitsubishi Denki Kabushiki Kaisha Optical semiconductor device
US6289030B1 (en) * 1997-01-31 2001-09-11 Hewlett-Packard Company Fabrication of semiconductor devices
JP3822976B2 (ja) * 1998-03-06 2006-09-20 ソニー株式会社 半導体装置およびその製造方法
JP2000231041A (ja) * 1999-02-10 2000-08-22 Nec Corp 光半導体素子と光伝送路の結合構造及びその結合方法
IES20000820A2 (en) * 2000-10-11 2002-05-29 Nat Univ Ireland A single frequency laser

Also Published As

Publication number Publication date
EP1446841A1 (de) 2004-08-18
US20050032264A1 (en) 2005-02-10
GB0124427D0 (en) 2001-12-05
WO2003044871A1 (en) 2003-05-30
JP2005510089A (ja) 2005-04-14
AU2002343185A1 (en) 2003-06-10
DE60203322T2 (de) 2006-04-06
US7083994B2 (en) 2006-08-01
EP1446841B1 (de) 2005-03-16
DE60203322D1 (de) 2005-04-21

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