ATE292320T1 - Infiltrierte nanoporösen materialien und verfahren zu deren herstellung - Google Patents

Infiltrierte nanoporösen materialien und verfahren zu deren herstellung

Info

Publication number
ATE292320T1
ATE292320T1 AT00973605T AT00973605T ATE292320T1 AT E292320 T1 ATE292320 T1 AT E292320T1 AT 00973605 T AT00973605 T AT 00973605T AT 00973605 T AT00973605 T AT 00973605T AT E292320 T1 ATE292320 T1 AT E292320T1
Authority
AT
Austria
Prior art keywords
layer
voids
structural
structural layer
infiltrating
Prior art date
Application number
AT00973605T
Other languages
English (en)
Inventor
Roger Leung
David Schaefer
John Sikonia
Original Assignee
Allied Signal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Signal Inc filed Critical Allied Signal Inc
Application granted granted Critical
Publication of ATE292320T1 publication Critical patent/ATE292320T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249955—Void-containing component partially impregnated with adjacent component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249955—Void-containing component partially impregnated with adjacent component
    • Y10T428/249958—Void-containing component is synthetic resin or natural rubbers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y10T428/24998—Composite has more than two layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249994—Composite having a component wherein a constituent is liquid or is contained within preformed walls [e.g., impregnant-filled, previously void containing component, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249994—Composite having a component wherein a constituent is liquid or is contained within preformed walls [e.g., impregnant-filled, previously void containing component, etc.]
    • Y10T428/249999—Differentially filled foam, filled plural layers, or filled layer with coat of filling material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/254—Polymeric or resinous material

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
AT00973605T 1999-10-18 2000-10-17 Infiltrierte nanoporösen materialien und verfahren zu deren herstellung ATE292320T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/420,042 US6171687B1 (en) 1999-10-18 1999-10-18 Infiltrated nanoporous materials and methods of producing same
PCT/US2000/028701 WO2001029847A1 (en) 1999-10-18 2000-10-17 Infiltrated nanoporous materials and methods of producing same

Publications (1)

Publication Number Publication Date
ATE292320T1 true ATE292320T1 (de) 2005-04-15

Family

ID=23664843

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00973605T ATE292320T1 (de) 1999-10-18 2000-10-17 Infiltrierte nanoporösen materialien und verfahren zu deren herstellung

Country Status (8)

Country Link
US (1) US6171687B1 (de)
EP (1) EP1226589B1 (de)
JP (1) JP2003512742A (de)
KR (1) KR20020075363A (de)
AT (1) ATE292320T1 (de)
AU (1) AU1210101A (de)
DE (1) DE60019149T2 (de)
WO (1) WO2001029847A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670022B1 (en) * 1997-04-17 2003-12-30 Honeywell International, Inc. Nanoporous dielectric films with graded density and process for making such films
JP4250287B2 (ja) * 1999-01-07 2009-04-08 キヤノン株式会社 シリカメソ構造体の製造方法
JP3587373B2 (ja) * 1999-09-10 2004-11-10 キヤノン株式会社 メソ構造体薄膜及びその製造方法
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
EP1094506A3 (de) 1999-10-18 2004-03-03 Applied Materials, Inc. Schutzschicht für Filme mit besonders kleiner Dielektrizitätskonstante
US7265062B2 (en) * 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US20020076543A1 (en) * 2000-12-19 2002-06-20 Sikonia John G. Layered dielectric nanoporous materials and methods of producing same
EP1373382A2 (de) * 2001-02-22 2004-01-02 Honeywell International Inc. Nanoporöse polymere mit niedriger dielektrizitätskonstante
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
US6709622B2 (en) 2001-03-23 2004-03-23 Romain Billiet Porous nanostructures and method of fabrication thereof
US6780499B2 (en) * 2001-05-03 2004-08-24 International Business Machines Corporation Ordered two-phase dielectric film, and semiconductor device containing the same
JP3505520B2 (ja) * 2001-05-11 2004-03-08 松下電器産業株式会社 層間絶縁膜
US6740685B2 (en) * 2001-05-30 2004-05-25 Honeywell International Inc. Organic compositions
US7141188B2 (en) * 2001-05-30 2006-11-28 Honeywell International Inc. Organic compositions
US20030148019A1 (en) * 2001-11-19 2003-08-07 Hwang Byung Keun Compositions and methods for forming dielectric layers using a colloid
US20040124092A1 (en) * 2002-12-30 2004-07-01 Black Charles T. Inorganic nanoporous membranes and methods to form same
EP1595003A4 (de) 2003-01-22 2008-03-26 Honeywell Int Inc Vorrichtung und verfahren zur ionisierten abscheidung eines films oder einer dünnen schicht
US7045851B2 (en) * 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
US7927664B2 (en) * 2006-08-28 2011-04-19 International Business Machines Corporation Method of step-and-flash imprint lithography
US20080173541A1 (en) * 2007-01-22 2008-07-24 Eal Lee Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling
US20090026924A1 (en) * 2007-07-23 2009-01-29 Leung Roger Y Methods of making low-refractive index and/or low-k organosilicate coatings
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
ES2343503B1 (es) * 2009-01-30 2011-06-10 Consejo Superior De Investigaciones Cientificas (Csic) Procedimiento para obtener un espejo de bragg flexible y espejo de bragg obtenido por dicho procedimiento.
US9586371B2 (en) 2014-09-02 2017-03-07 Empire Technology Development Llc Method of bonding material layers in an additive manufacturing process
US20210198158A1 (en) * 2017-10-27 2021-07-01 Corning Incorporated Polymer and porous inorganic composite article and methods thereof
EP4043875A1 (de) * 2021-02-12 2022-08-17 Meilleur Temps Molekularer detektor auf basis eines oszillators mit nanostruktur

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230463A (en) * 1977-09-13 1980-10-28 Monsanto Company Multicomponent membranes for gas separations
US4845150A (en) * 1985-09-26 1989-07-04 Foster-Miller Inc. Interpenetrated polymer films
GB8715530D0 (en) * 1987-07-02 1987-08-12 Ici Plc Microporous products
US5034801A (en) * 1989-07-31 1991-07-23 W. L. Gore & Associates, Inc. Intergrated circuit element having a planar, solvent-free dielectric layer
JP2906282B2 (ja) 1990-09-20 1999-06-14 富士通株式会社 ガラスセラミック・グリーンシートと多層基板、及び、その製造方法
JPH04314394A (ja) 1991-04-12 1992-11-05 Fujitsu Ltd ガラスセラミック回路基板とその製造方法
JPH0799646B2 (ja) * 1991-05-03 1995-10-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 分子的多孔性エーロゲルで充填された低誘電率複合積層品
JP2531906B2 (ja) 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
JPH0722741A (ja) * 1993-07-01 1995-01-24 Japan Gore Tex Inc カバーレイフィルム及びカバーレイフィルム被覆回路基板
US5504042A (en) * 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5629353A (en) * 1995-05-22 1997-05-13 The Regents Of The University Of California Highly cross-linked nanoporous polymers
US5874516A (en) 1995-07-13 1999-02-23 Air Products And Chemicals, Inc. Nonfunctionalized poly(arylene ethers)
JPH1092444A (ja) * 1996-09-13 1998-04-10 Japan Gore Tex Inc 電気化学反応装置用固体高分子電解質複合体及びそれを用いた電気化学反応装置
US5872070A (en) * 1997-01-03 1999-02-16 Exxon Research And Engineering Company Pyrolysis of ceramic precursors to nanoporous ceramics
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content

Also Published As

Publication number Publication date
AU1210101A (en) 2001-04-30
WO2001029847A9 (en) 2002-08-01
JP2003512742A (ja) 2003-04-02
DE60019149D1 (de) 2005-05-04
EP1226589A1 (de) 2002-07-31
DE60019149T2 (de) 2006-01-26
US6171687B1 (en) 2001-01-09
EP1226589B1 (de) 2005-03-30
KR20020075363A (ko) 2002-10-04
WO2001029847A1 (en) 2001-04-26

Similar Documents

Publication Publication Date Title
DE60019149D1 (de) Infiltrierte nanoporösen materialien und verfahren zu deren herstellung
ATE265558T1 (de) Verfahren zur herstellung eines mehrschichtigen gegenstands mittels lichtbogenplasmabeschichtung
ATE531077T1 (de) Belastungsfreies zusammengesetztes substrat und verfahren zur herstellung eines solchen zusammengesetzten substrats
WO2002090245A3 (en) Methods of forming microstructure devices
EP1069447A3 (de) Beschichtete Faserstränge mit einem oder mehreren heterogenen Bereichen in der Beschichtung und dessen Herstellung
GB2361809A (en) A method of processing a polymer layer
ATE239612T1 (de) Diamantbeschichtete werkzeuge und verfahren zur herstellung
DE60127402D1 (de) Verfahren zur herstellung von substraten und dadurch hergestellte substrate
MY120479A (en) Method for producing a thin membrane and membrane structure so obtained.
AU5589699A (en) Capacitors comprising roughened platinum layers, methods of forming roughened layers of platinum and methods of forming capacitors
DE60211318D1 (de) Metal-gate stapel mit einer verbesserten ätzstopschicht durch ionimplantation von metalatomen und verfahren zu dessen herstellung
EP0815953A3 (de) Verfahren zur Abscheidung von substituierten Fluorkohlenstoffpolymerschichten
DE60221546D1 (de) Verfahren zur herstellung von steinprodukten, insbesondere von platten mit marmoriertem effekt
MY119325A (en) Method of manufacturing bi-layered ferroelectric thin film
DE69705744D1 (de) Artikel mit superlegierungsubstrat und einer anreicherungsschicht darauf, sowie verfahren zu dessen herstellung
EP1071123A8 (de) Verfahren zur herstellung einer schicht
DE60016466D1 (de) Verfahren zur herstellung von low-density polymer oder metall-matrix substraten mit keramischer und/oder metall-keramischer beschichtung und low-density komponenten mit hoher festigkeit so hergestellt
DE60024309D1 (de) Verfahren zur herstellung von starren vernetzten artikeln
EP1369942A3 (de) Brennstoffzellenseparator und Verfahren zu seiner Herstellung
ATE143061T1 (de) Verfahren zur herstellung einer silizium- enthaltenden schicht auf ein metallisches substrat sowie anti-korrosionsbehandlung
DE60019335D1 (de) Verfahren zur herstellung von poren in einem polymeren material
WO2004057053A3 (en) Methods for producing coated metal wire
ATE202242T1 (de) Gasdiffusionselektrode und deren herstellung
JPS5887818A (ja) 薄膜形成法
DE50213033D1 (de) Verfahren zur herstellung eines keramischen substrats und keramisches substrat

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties