ATE350143T1 - Kristallines galliumnitrid und herstellungsverfahren - Google Patents

Kristallines galliumnitrid und herstellungsverfahren

Info

Publication number
ATE350143T1
ATE350143T1 AT00967039T AT00967039T ATE350143T1 AT E350143 T1 ATE350143 T1 AT E350143T1 AT 00967039 T AT00967039 T AT 00967039T AT 00967039 T AT00967039 T AT 00967039T AT E350143 T1 ATE350143 T1 AT E350143T1
Authority
AT
Austria
Prior art keywords
gallium nitride
capsule
providing
source
production process
Prior art date
Application number
AT00967039T
Other languages
English (en)
Inventor
Evelyn Mark Philip D
Kristi Jean Narang
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23637257&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE350143(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE350143T1 publication Critical patent/ATE350143T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0665—Gallium nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
AT00967039T 1999-10-06 2000-09-28 Kristallines galliumnitrid und herstellungsverfahren ATE350143T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/413,446 US6398867B1 (en) 1999-10-06 1999-10-06 Crystalline gallium nitride and method for forming crystalline gallium nitride

Publications (1)

Publication Number Publication Date
ATE350143T1 true ATE350143T1 (de) 2007-01-15

Family

ID=23637257

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00967039T ATE350143T1 (de) 1999-10-06 2000-09-28 Kristallines galliumnitrid und herstellungsverfahren

Country Status (10)

Country Link
US (1) US6398867B1 (de)
EP (1) EP1230005B1 (de)
JP (1) JP4942270B2 (de)
KR (1) KR100762019B1 (de)
AT (1) ATE350143T1 (de)
AU (1) AU7729700A (de)
CA (1) CA2385713A1 (de)
DE (1) DE60032793T2 (de)
TW (1) TWI272122B (de)
WO (1) WO2001024921A1 (de)

Families Citing this family (155)

* Cited by examiner, † Cited by third party
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