ATE357060T1 - Ultraempfindlicher photodetektor mit integriertem pinhole für konfokale mikroskope und verfahren zur detektion optisches signal - Google Patents
Ultraempfindlicher photodetektor mit integriertem pinhole für konfokale mikroskope und verfahren zur detektion optisches signalInfo
- Publication number
- ATE357060T1 ATE357060T1 AT01927893T AT01927893T ATE357060T1 AT E357060 T1 ATE357060 T1 AT E357060T1 AT 01927893 T AT01927893 T AT 01927893T AT 01927893 T AT01927893 T AT 01927893T AT E357060 T1 ATE357060 T1 AT E357060T1
- Authority
- AT
- Austria
- Prior art keywords
- optical signal
- detecting optical
- confocal microscopes
- sensitive photodetector
- regions
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
Landscapes
- Light Receiving Elements (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000MI000765A IT1317199B1 (it) | 2000-04-10 | 2000-04-10 | Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE357060T1 true ATE357060T1 (de) | 2007-04-15 |
Family
ID=11444799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01927893T ATE357060T1 (de) | 2000-04-10 | 2001-04-09 | Ultraempfindlicher photodetektor mit integriertem pinhole für konfokale mikroskope und verfahren zur detektion optisches signal |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6995444B2 (de) |
| EP (1) | EP1273047B1 (de) |
| JP (1) | JP5106734B2 (de) |
| AT (1) | ATE357060T1 (de) |
| DE (1) | DE60127246T2 (de) |
| IT (1) | IT1317199B1 (de) |
| WO (1) | WO2001078153A2 (de) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IES20010616A2 (en) * | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
| US6781133B2 (en) * | 2001-11-01 | 2004-08-24 | Radiation Monitoring Devices, Inc. | Position sensitive solid state detector with internal gain |
| JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
| US7288825B2 (en) * | 2002-12-18 | 2007-10-30 | Noble Peak Vision Corp. | Low-noise semiconductor photodetectors |
| US7341921B2 (en) * | 2003-05-14 | 2008-03-11 | University College Cork - National University Of Ireland, Cork | Photodiode |
| ATE499705T1 (de) * | 2004-04-05 | 2011-03-15 | Nec Corp | Fotodiode und herstellungsverfahren dafür |
| RU2290721C2 (ru) | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
| EP1780796A1 (de) * | 2005-10-26 | 2007-05-02 | Deutsche Thomson-Brandt Gmbh | Verfahren zur Erfassung von Daten mit einem Bildsensor |
| JP4931475B2 (ja) * | 2006-05-11 | 2012-05-16 | 株式会社神戸製鋼所 | 紫外線検出素子及び検出方法 |
| US20070290142A1 (en) * | 2006-06-16 | 2007-12-20 | General Electeric Company | X-ray detectors with adjustable active area electrode assembly |
| GB2446429A (en) * | 2006-12-08 | 2008-08-13 | E2V Tech | Photosensor with variable sensing area |
| WO2008113067A2 (en) * | 2007-03-15 | 2008-09-18 | Johns Hopkins University | Deep submicron and nano cmos single photon photodetector pixel with event based circuits for readout data-rate reduction |
| SE531025C2 (sv) * | 2007-04-02 | 2008-11-25 | Bo Cederwall | System och metod för fotondetektion och för mätning av fotonflöden |
| TWI455326B (zh) * | 2007-09-13 | 2014-10-01 | Omnivision Tech Inc | 透射式偵測器、使用該偵測器之系統及其方法 |
| US20090146179A1 (en) * | 2007-12-11 | 2009-06-11 | Young-Kai Chen | Planar arrays of photodiodes |
| ITTO20080046A1 (it) | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| ITTO20080045A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| JP2009231786A (ja) * | 2008-03-21 | 2009-10-08 | E2V Technologies (Uk) Ltd | センサ装置 |
| IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
| IT1393781B1 (it) * | 2009-04-23 | 2012-05-08 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione |
| KR101148335B1 (ko) * | 2009-07-23 | 2012-05-21 | 삼성전기주식회사 | 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀 |
| KR101084940B1 (ko) * | 2009-09-28 | 2011-11-17 | 삼성전기주식회사 | 실리콘 광전자 증배관 |
| IT1399690B1 (it) | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
| CN102024863B (zh) * | 2010-10-11 | 2013-03-27 | 湘潭大学 | 高速增强型紫外硅选择性雪崩光电二极管及其制作方法 |
| DE102010055882A1 (de) * | 2010-12-22 | 2012-06-28 | Carl Zeiss Microlmaging Gmbh | Pinhole für ein konfokales Laser-Scanning Mikroskop |
| JP2012248655A (ja) * | 2011-05-27 | 2012-12-13 | Mitsubishi Electric Corp | アバランシェフォトダイオード及びアバランシェフォトダイオードアレイ |
| BR112014004344A2 (pt) | 2011-08-30 | 2017-05-30 | Koninklijke Philips Nv | matriz detectora e método de detecção de maiores taxas de fluxo de fóton |
| KR20140019984A (ko) * | 2012-08-07 | 2014-02-18 | 한국전자통신연구원 | 가드링 구조를 갖는 아발란치 포토다이오드 및 그 제조 방법 |
| GB201311055D0 (en) | 2013-06-21 | 2013-08-07 | St Microelectronics Res & Dev | Single-photon avalanche diode and an array thereof |
| JP5661877B2 (ja) * | 2013-07-31 | 2015-01-28 | イー２ヴイ テクノロジーズ （ユーケイ） リミテッド | センサ装置 |
| LU92665B1 (de) * | 2015-02-24 | 2016-08-25 | Leica Microsystems | Verfahren zur verbesserung des dynamikbereichs einer vorrichtung zum detektieren von licht |
| DE102016206330B3 (de) * | 2016-04-14 | 2017-06-29 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Bildelement |
| DE102016119730A1 (de) * | 2016-10-17 | 2018-04-19 | Carl Zeiss Microscopy Gmbh | Optikgruppe für Detektionslicht für ein Mikroskop, Verfahren zur Mikroskopie und Mikroskop |
| JP6712215B2 (ja) * | 2016-11-11 | 2020-06-17 | 浜松ホトニクス株式会社 | 光検出装置 |
| GB2576491A (en) * | 2018-07-17 | 2020-02-26 | Cambridge Entpr Ltd | A photodetector |
| US12015036B2 (en) * | 2020-04-28 | 2024-06-18 | Lawrence Livermore National Security, Llc | High temporal resolution solid-state X-ray detection system |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
| US4127932A (en) * | 1976-08-06 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Method of fabricating silicon photodiodes |
| JPS58103180A (ja) * | 1981-12-15 | 1983-06-20 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光検出装置 |
| JPH05103180A (ja) * | 1991-10-03 | 1993-04-23 | Minolta Camera Co Ltd | フアクシミリ装置 |
| JP3029497B2 (ja) * | 1991-12-20 | 2000-04-04 | ローム株式会社 | フォトダイオードアレイおよびその製造法 |
| JPH07114293B2 (ja) * | 1992-02-20 | 1995-12-06 | 浜松ホトニクス株式会社 | 半導体光入射位置検出素子 |
| EP0579045B1 (de) * | 1992-07-16 | 1995-02-22 | Landis & Gyr Technology Innovation AG | Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker |
| JP3364989B2 (ja) * | 1993-06-15 | 2003-01-08 | 株式会社ニコン | 分割光センサ−用アバランシェフォトダイオ−ド |
| US5360987A (en) * | 1993-11-17 | 1994-11-01 | At&T Bell Laboratories | Semiconductor photodiode device with isolation region |
| JPH07221341A (ja) * | 1993-12-08 | 1995-08-18 | Nikon Corp | 紫外線検出用シリコンアバランシェフォトダイオード |
| JPH10233525A (ja) | 1997-02-19 | 1998-09-02 | Hamamatsu Photonics Kk | アバランシェフォトダイオード |
| US5831322A (en) * | 1997-06-25 | 1998-11-03 | Advanced Photonix, Inc. | Active large area avalanche photodiode array |
-
2000
- 2000-04-10 IT IT2000MI000765A patent/IT1317199B1/it active
-
2001
- 2001-04-09 WO PCT/EP2001/004008 patent/WO2001078153A2/en not_active Ceased
- 2001-04-09 US US10/257,071 patent/US6995444B2/en not_active Expired - Fee Related
- 2001-04-09 JP JP2001574908A patent/JP5106734B2/ja not_active Expired - Fee Related
- 2001-04-09 DE DE60127246T patent/DE60127246T2/de not_active Expired - Lifetime
- 2001-04-09 AT AT01927893T patent/ATE357060T1/de not_active IP Right Cessation
- 2001-04-09 EP EP01927893A patent/EP1273047B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1273047B1 (de) | 2007-03-14 |
| DE60127246D1 (de) | 2007-04-26 |
| ITMI20000765A0 (it) | 2000-04-10 |
| JP5106734B2 (ja) | 2012-12-26 |
| EP1273047A2 (de) | 2003-01-08 |
| DE60127246T2 (de) | 2008-02-28 |
| JP2003530701A (ja) | 2003-10-14 |
| ITMI20000765A1 (it) | 2001-10-10 |
| US6995444B2 (en) | 2006-02-07 |
| US20030160250A1 (en) | 2003-08-28 |
| WO2001078153A3 (en) | 2002-04-04 |
| IT1317199B1 (it) | 2003-05-27 |
| WO2001078153A2 (en) | 2001-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |