ATE361550T1 - Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung - Google Patents

Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung

Info

Publication number
ATE361550T1
ATE361550T1 AT04732707T AT04732707T ATE361550T1 AT E361550 T1 ATE361550 T1 AT E361550T1 AT 04732707 T AT04732707 T AT 04732707T AT 04732707 T AT04732707 T AT 04732707T AT E361550 T1 ATE361550 T1 AT E361550T1
Authority
AT
Austria
Prior art keywords
semiconductor
depression
semiconductor arrangement
solution containing
trough
Prior art date
Application number
AT04732707T
Other languages
English (en)
Inventor
Paulus C Duineveld
Gerwin H Gelinck
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE361550T1 publication Critical patent/ATE361550T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
AT04732707T 2003-05-20 2004-05-13 Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung ATE361550T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03101431 2003-05-20

Publications (1)

Publication Number Publication Date
ATE361550T1 true ATE361550T1 (de) 2007-05-15

Family

ID=33462182

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04732707T ATE361550T1 (de) 2003-05-20 2004-05-13 Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung

Country Status (8)

Country Link
US (1) US7651957B2 (de)
EP (1) EP1629525B1 (de)
JP (1) JP2007515776A (de)
KR (1) KR100989263B1 (de)
CN (1) CN1791965B (de)
AT (1) ATE361550T1 (de)
DE (1) DE602004006256T2 (de)
WO (1) WO2004105104A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101137865B1 (ko) * 2005-06-21 2012-04-20 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조방법 및 이를 이용한 박막트랜지스터 기판
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
TWI345326B (en) * 2006-03-29 2011-07-11 Pioneer Corp Organic thin film transistor device and manufacturing method therefor
KR101206661B1 (ko) * 2006-06-02 2012-11-30 삼성전자주식회사 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자
US8017940B2 (en) * 2007-05-25 2011-09-13 Panasonic Corporation Organic transistor, method of forming organic transistor and organic EL display with organic transistor
GB2450381B (en) * 2007-06-22 2009-11-11 Cambridge Display Tech Ltd Organic thin film transistors
US20100291723A1 (en) * 2007-08-28 2010-11-18 Agency For Science, Technology And Research Method of manufacturing an organic electronic or optoelectronic device
US8329504B2 (en) 2008-02-12 2012-12-11 Konica Minolta Holdings, Inc. Method of forming organic semiconductor layer and method of manufacturing organic thin film transistor
JP2009302441A (ja) * 2008-06-17 2009-12-24 Konica Minolta Holdings Inc 有機ｔｆｔ
US8420465B2 (en) 2008-11-19 2013-04-16 Konica Minolta Holdings, Inc. Organic thin film transistor manufacturing method and organic thin film transistor
KR101509809B1 (ko) * 2009-12-01 2015-04-08 현대자동차주식회사 차량의 커튼에어백용 램프브라켓
FR2956669A1 (fr) * 2010-02-23 2011-08-26 Commissariat Energie Atomique Procede de cristallisation de materiaux
WO2013042755A1 (ja) * 2011-09-22 2013-03-28 日本電気株式会社 有機半導体素子
US10588622B2 (en) 2016-12-07 2020-03-17 Ethicon, Inc. Applicator instruments having articulating shafts for dispensing surgical fasteners
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723508B2 (ja) * 1985-10-21 1998-03-09 日本電気株式会社 電子線直接描画のためのアライメント方法
US6416778B1 (en) * 1997-01-24 2002-07-09 Femmepharma Pharmaceutical preparations and methods for their regional administration
JPH11121178A (ja) 1997-10-14 1999-04-30 Matsushita Electric Ind Co Ltd 有機エレクトロルミネセンス素子及びその製造方法
EP1793650B1 (de) * 1998-03-17 2014-03-05 Seiko Epson Corporation Verfahren zur Herstellung eines Flachbildschirms
KR100403714B1 (ko) * 2000-06-10 2003-11-01 씨씨알 주식회사 웹문서 레이아웃 이미지 및 웹사이트 구조를 제공하여인터넷 검색을 용이하게 할 수 있는 시스템 및 방법
US7215393B2 (en) * 2000-07-28 2007-05-08 Matsushita Electric Industrial Co., Ltd. Reflective plate and display device using the plate
EP1335418B1 (de) 2002-02-05 2005-09-07 Bernd E. Dr. Maile Verfahren zur Herstellung einer T-förmigen Elektrode

Also Published As

Publication number Publication date
EP1629525A1 (de) 2006-03-01
US20060281332A1 (en) 2006-12-14
EP1629525B1 (de) 2007-05-02
WO2004105104A1 (en) 2004-12-02
KR20060015270A (ko) 2006-02-16
KR100989263B1 (ko) 2010-10-20
CN1791965B (zh) 2012-02-22
DE602004006256D1 (de) 2007-06-14
CN1791965A (zh) 2006-06-21
JP2007515776A (ja) 2007-06-14
DE602004006256T2 (de) 2008-01-24
US7651957B2 (en) 2010-01-26

Similar Documents

Publication Publication Date Title
DE602004006256D1 (de) Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung
ATE524577T1 (de) Verfahren zur herstellung einer epitaktisch aufgewachsenen schicht
DE60202145D1 (de) Verfahren zur bereitstellung einer hydrophoben schicht und kondesatormikrofon mit einer solchen schicht
EP1965416A3 (de) Freistehende III-N-Schichten oder Vorrichtungen, die durch selektive Maskierung von III-N-Schichten während des III-N-Schichtenwachstums erhalten werden
DK2165362T3 (da) Through-wafer-via ved lav modstand
DE60333715D1 (de) Verfahren zur Herstellung funktioneller Substrate, die kolumnare Mikrosäulen aufweisen
ATE438927T1 (de) Prozess zur herstellung von dünnfilmtransistoren
DE602004029486D1 (de) Grossfläches gan-substrat mit einheitlich geringer versetzungsdichte und herstellungsverfahren dafür
DE602005027196D1 (de) Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
ATE482301T1 (de) Verfahren zur herstellung von siliziumoxidhaltigen schichten
ATE418627T1 (de) System und methode für die herstellung zircon- und/oder hafniumhältiger schichten
DE50100024D1 (de) Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
ATE557419T1 (de) Verfahren zur herstellung eines halbleiterbauelements
DE602004008941D1 (de) Verfahren zur herstellung einer epitaktischen schicht
DE60333926D1 (de) Verfahren zur Herstellung vollfarbiger organischer elektrolumineszenter Vorrichtungen
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
TW200520609A (en) Mask, method for manufacturing thereof, method for manufacturing organic electroluminescent device, and organic electroluminescent device
WO2004114371A3 (de) Verbindung zur bildung einer selbstorganisierenden monolage, schichtstruktur, halbleiterbauelement mit einer schichtstruktur und verfahren zur herstellung einer schichtstruktur
FR2842350B1 (fr) Procede de transfert d'une couche de materiau semiconducteur contraint
TW428328B (en) Fabricating method of thin film transistor
DE602006006370D1 (de) Verfahren zur Oberflächenbehandlung von III-V-Halbleitersubstraten und Verfahren zur Herstellung von III-V-Verbindungshalbleitern
DE602004030368D1 (de) Herstellung von gitterabstimmungs-halbleitersubstraten
ATE428956T1 (de) Verfahren zur herstellung einer lichtempfindlichen keramischen zusammensetzung und mehrschichtiges substrat damit
ATE548327T1 (de) Verfahren zur herstellung von nanostrukturen
NO20055966L (no) Fremgangsmate for fremstilling av et komposittmateriale

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties