ATE407449T1 - Verfahren zur herstellung von einer oxydschicht auf einer siliziumkarbidschicht mittels temperung in einer wasserstoff umgebung - Google Patents

Verfahren zur herstellung von einer oxydschicht auf einer siliziumkarbidschicht mittels temperung in einer wasserstoff umgebung

Info

Publication number
ATE407449T1
ATE407449T1 AT02733980T AT02733980T ATE407449T1 AT E407449 T1 ATE407449 T1 AT E407449T1 AT 02733980 T AT02733980 T AT 02733980T AT 02733980 T AT02733980 T AT 02733980T AT E407449 T1 ATE407449 T1 AT E407449T1
Authority
AT
Austria
Prior art keywords
layer
oxide layer
silicon carbide
oxide
hydrogen
Prior art date
Application number
AT02733980T
Other languages
English (en)
Inventor
Lori Lipkin
Mrinal Das
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/834,283 external-priority patent/US6610366B2/en
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE407449T1 publication Critical patent/ATE407449T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
AT02733980T 2001-04-12 2002-04-12 Verfahren zur herstellung von einer oxydschicht auf einer siliziumkarbidschicht mittels temperung in einer wasserstoff umgebung ATE407449T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/834,283 US6610366B2 (en) 2000-10-03 2001-04-12 Method of N2O annealing an oxide layer on a silicon carbide layer
US29430701P 2001-05-30 2001-05-30
US10/045,542 US7067176B2 (en) 2000-10-03 2001-10-26 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment

Publications (1)

Publication Number Publication Date
ATE407449T1 true ATE407449T1 (de) 2008-09-15

Family

ID=27366709

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02733980T ATE407449T1 (de) 2001-04-12 2002-04-12 Verfahren zur herstellung von einer oxydschicht auf einer siliziumkarbidschicht mittels temperung in einer wasserstoff umgebung

Country Status (9)

Country Link
US (1) US7067176B2 (de)
EP (3) EP2259288B1 (de)
JP (1) JP4781610B2 (de)
KR (1) KR100855388B1 (de)
CN (1) CN100517607C (de)
AT (1) ATE407449T1 (de)
CA (1) CA2442929C (de)
DE (1) DE60228695D1 (de)
WO (1) WO2002084727A2 (de)

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JP4781610B2 (ja) 2011-09-28
EP2259288A3 (de) 2011-01-05
JP2004532522A (ja) 2004-10-21
EP1968119A2 (de) 2008-09-10
WO2002084727A3 (en) 2003-04-10
DE60228695D1 (de) 2008-10-16
WO2002084727A2 (en) 2002-10-24
CA2442929A1 (en) 2002-10-24
US7067176B2 (en) 2006-06-27
CA2442929C (en) 2012-06-26
KR100855388B1 (ko) 2008-09-04
KR20040002908A (ko) 2004-01-07
CN100517607C (zh) 2009-07-22
EP1378006A2 (de) 2004-01-07
EP1968119B1 (de) 2011-11-23
EP1378006B1 (de) 2008-09-03
US20020102358A1 (en) 2002-08-01
CN1531746A (zh) 2004-09-22
EP2259288B1 (de) 2012-12-05
EP1968119A3 (de) 2008-10-22
EP2259288A2 (de) 2010-12-08

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