ATE421768T1 - Herstellung von mikro-dimensionierten strukturen aus polykristallinen materialien - Google Patents

Herstellung von mikro-dimensionierten strukturen aus polykristallinen materialien

Info

Publication number
ATE421768T1
ATE421768T1 AT01911880T AT01911880T ATE421768T1 AT E421768 T1 ATE421768 T1 AT E421768T1 AT 01911880 T AT01911880 T AT 01911880T AT 01911880 T AT01911880 T AT 01911880T AT E421768 T1 ATE421768 T1 AT E421768T1
Authority
AT
Austria
Prior art keywords
nano
structures
polycrystalline
layer
scale
Prior art date
Application number
AT01911880T
Other languages
English (en)
Inventor
Munir Naeem
Lawrence Clevenger
Original Assignee
Ibm
Ibm Uk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Ibm Uk filed Critical Ibm
Application granted granted Critical
Publication of ATE421768T1 publication Critical patent/ATE421768T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/715—On an organic substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y10S977/727—Devices having flexible or movable element formed from biological material
    • Y10S977/73—Devices having flexible or movable element formed from biological material for electrical purposes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Micromachines (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Glass Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT01911880T 2000-03-14 2001-03-13 Herstellung von mikro-dimensionierten strukturen aus polykristallinen materialien ATE421768T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/523,866 US6359325B1 (en) 2000-03-14 2000-03-14 Method of forming nano-scale structures from polycrystalline materials and nano-scale structures formed thereby

Publications (1)

Publication Number Publication Date
ATE421768T1 true ATE421768T1 (de) 2009-02-15

Family

ID=24086750

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01911880T ATE421768T1 (de) 2000-03-14 2001-03-13 Herstellung von mikro-dimensionierten strukturen aus polykristallinen materialien

Country Status (12)

Country Link
US (1) US6359325B1 (de)
EP (1) EP1264336B1 (de)
JP (1) JP3962259B2 (de)
KR (1) KR100500220B1 (de)
CN (1) CN1321438C (de)
AT (1) ATE421768T1 (de)
AU (1) AU2001240802A1 (de)
DE (1) DE60137492D1 (de)
IL (1) IL151742A0 (de)
MY (1) MY120870A (de)
TW (1) TW495888B (de)
WO (1) WO2001069664A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10157627A1 (de) 2001-11-26 2003-06-12 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer Schicht auf einem Substrat
US20060084566A1 (en) * 2004-10-19 2006-04-20 General Electric Company Multiphase ceramic nanocomposites and method of making them
KR100746743B1 (ko) * 2006-01-06 2007-08-06 삼성전자주식회사 2ｄ 나노 구조물 제작 방법 및 그 방법으로 제작된 2ｄ나노 구조물

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528048A (en) 1967-07-06 1970-09-08 Ibm Method of constructing printed circuits for subsequent completion or deletion
JPH0492413A (ja) * 1990-08-08 1992-03-25 Canon Inc 結晶薄膜の成長方法
JPH05121317A (ja) 1991-10-24 1993-05-18 Rohm Co Ltd Ｓｏｉ構造形成方法
US5714404A (en) * 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
EP0659911A1 (de) * 1993-12-23 1995-06-28 International Business Machines Corporation Verfahren zur Herstellung eines polykristallinen Filmes auf einem Substrat
JPH08148430A (ja) * 1994-11-24 1996-06-07 Sony Corp 多結晶半導体薄膜の作成方法
CN1195884C (zh) * 1995-11-13 2005-04-06 康涅狄格大学 用于热喷涂的纳米结构的进料
US5874134A (en) * 1996-01-29 1999-02-23 Regents Of The University Of Minnesota Production of nanostructured materials by hypersonic plasma particle deposition
JP3522441B2 (ja) 1996-03-12 2004-04-26 株式会社半導体エネルギー研究所 半導体装置
CN1046174C (zh) * 1996-08-16 1999-11-03 复旦大学 纳米宽度有机导线的制备方法
US5948470A (en) * 1997-04-28 1999-09-07 Harrison; Christopher Method of nanoscale patterning and products made thereby
US6040230A (en) * 1997-04-30 2000-03-21 Texas Instruments Incorporated Method of forming a nano-rugged silicon-containing layer

Also Published As

Publication number Publication date
JP2003526942A (ja) 2003-09-09
TW495888B (en) 2002-07-21
CN1636269A (zh) 2005-07-06
IL151742A0 (en) 2003-04-10
JP3962259B2 (ja) 2007-08-22
EP1264336B1 (de) 2009-01-21
KR100500220B1 (ko) 2005-07-11
DE60137492D1 (de) 2009-03-12
WO2001069664A2 (en) 2001-09-20
KR20020079950A (ko) 2002-10-19
US6359325B1 (en) 2002-03-19
MY120870A (en) 2005-11-30
WO2001069664A3 (en) 2001-12-20
EP1264336A2 (de) 2002-12-11
AU2001240802A1 (en) 2001-09-24
CN1321438C (zh) 2007-06-13

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