ATE445003T1 - Ph-gepufferte, wässrige reinigungszusammensetzung und verfahren zur entfernung von fotolack- rückständen - Google Patents

Ph-gepufferte, wässrige reinigungszusammensetzung und verfahren zur entfernung von fotolack- rückständen

Info

Publication number
ATE445003T1
ATE445003T1 AT07250069T AT07250069T ATE445003T1 AT E445003 T1 ATE445003 T1 AT E445003T1 AT 07250069 T AT07250069 T AT 07250069T AT 07250069 T AT07250069 T AT 07250069T AT E445003 T1 ATE445003 T1 AT E445003T1
Authority
AT
Austria
Prior art keywords
cleaning composition
substrate
removal
aqueous cleaning
residue
Prior art date
Application number
AT07250069T
Other languages
English (en)
Inventor
Aiping Wu
Roberto John Rovito
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE445003T1 publication Critical patent/ATE445003T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07250069T 2006-01-12 2007-01-09 Ph-gepufferte, wässrige reinigungszusammensetzung und verfahren zur entfernung von fotolack- rückständen ATE445003T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/330,815 US7534753B2 (en) 2006-01-12 2006-01-12 pH buffered aqueous cleaning composition and method for removing photoresist residue

Publications (1)

Publication Number Publication Date
ATE445003T1 true ATE445003T1 (de) 2009-10-15

Family

ID=37983393

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07250069T ATE445003T1 (de) 2006-01-12 2007-01-09 Ph-gepufferte, wässrige reinigungszusammensetzung und verfahren zur entfernung von fotolack- rückständen

Country Status (9)

Country Link
US (1) US7534753B2 (de)
EP (1) EP1808480B1 (de)
JP (1) JP4473277B2 (de)
KR (1) KR20070075303A (de)
CN (1) CN101000469A (de)
AT (1) ATE445003T1 (de)
DE (1) DE602007002643D1 (de)
SG (1) SG134245A1 (de)
TW (1) TWI336729B (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
US20080076076A1 (en) * 2006-09-22 2008-03-27 Texas Instruments Incorporated Rework methodology that preserves gate performance
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
TWI446400B (zh) 2007-10-05 2014-07-21 Schott Ag Fluorescent lamp with lamp cleaning method
US8357646B2 (en) 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal
US8580656B2 (en) * 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
MY160647A (en) * 2008-10-09 2017-03-15 Avantor Performance Mat Inc Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
CN102227687A (zh) * 2008-12-25 2011-10-26 长瀬化成株式会社 光致抗蚀剂剥离剂组合物、层积金属布线基板的光致抗蚀剂剥离方法和制造方法
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
JP4725905B2 (ja) * 2009-04-17 2011-07-13 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物及びフォトレジスト剥離方法
KR20110007828A (ko) * 2009-07-17 2011-01-25 동우 화인켐 주식회사 구리 또는 구리합금 배선용 박리액 조성물
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
TWI470119B (zh) * 2009-11-13 2015-01-21 Avantor Performance Mat Inc 用於氧化銅蝕刻殘留物之移除及避免銅電鍍之水相酸性調配物
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN102905836B (zh) * 2010-03-26 2016-05-04 沃特世科技公司 具有扩散结合且表面改性的构件的层析设备
US8536106B2 (en) * 2010-04-14 2013-09-17 Ecolab Usa Inc. Ferric hydroxycarboxylate as a builder
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
MY163493A (en) * 2010-07-19 2017-09-15 Basf Se Aqueous alkaline cleaning compositions and method of their use
EP2557147B1 (de) * 2011-08-09 2015-04-01 Basf Se Wässrige basische Lösung und Verfahren zur Behandlung der Oberfläche von Siliziumsubstraten
DE102011088885A1 (de) * 2011-12-16 2013-06-20 Wacker Chemie Ag Siliconlöser
US20130302985A1 (en) * 2012-05-10 2013-11-14 Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") Method of removing residue during semiconductor device fabrication
CN102880017B (zh) * 2012-09-28 2014-07-23 京东方科技集团股份有限公司 光刻胶用剥离液组合物及其制备和应用
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR20150143627A (ko) * 2013-04-10 2015-12-23 와코 쥰야꾸 고교 가부시키가이샤 금속배선용 기판 세정제 및 반도체 기판의 세정방법
CN103513522B (zh) * 2013-09-25 2018-06-01 青岛果子科技服务平台有限公司 半导体清洗组合物
EP3099839A4 (de) * 2014-01-29 2017-10-11 Entegris, Inc. Formulierungen zur verwendung nach dem chemisch-mechanischen polieren und verfahren zur verwendung
KR102427699B1 (ko) 2015-04-27 2022-08-01 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법
JP6477407B2 (ja) * 2015-10-15 2019-03-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR102113189B1 (ko) * 2016-08-23 2020-06-03 오씨아이 주식회사 식각 후 식각 용액의 후처리 방법
EP3721297B1 (de) * 2017-12-08 2024-02-07 Henkel AG & Co. KGaA Photolackentfernerzusammensetzung
KR102767433B1 (ko) 2018-03-02 2025-02-14 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 알루미나의 데미지를 억제한 조성물 및 이것을 이용한 반도체기판의 제조방법
CN112384597A (zh) * 2018-07-06 2021-02-19 恩特格里斯公司 选择性蚀刻材料的改进
JP2020170841A (ja) * 2019-04-03 2020-10-15 悦盟先進化學股▲分▼有限公司 エッチング残渣の除去のためのクリーニング組成物
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR102944353B1 (ko) * 2020-11-06 2026-03-27 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
KR102668584B1 (ko) * 2021-09-30 2024-05-24 주식회사 케이씨텍 Cmp 후 세정액 조성물
CN114318353B (zh) * 2021-12-27 2023-12-05 广东红日星实业有限公司 一种除灰剂及其制备方法和应用
US12486473B2 (en) * 2022-03-23 2025-12-02 Entegris, Inc. Post CMP cleaning composition

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1690404A (en) 1926-03-01 1928-11-06 Frank C Dieckmann Combined dresser, wardrobe, bookcase, and rack
US3951827A (en) 1973-12-03 1976-04-20 Borg-Warner Corporation Composition and method for removing insoluble scale deposits from surfaces
JPH0750086B2 (ja) * 1989-09-13 1995-05-31 ダイソー株式会社 クロマトグラフ充填剤及びこれによる水溶性有機化合物の分離法
JP3274232B2 (ja) * 1993-06-01 2002-04-15 ディップソール株式会社 錫−ビスマス合金めっき浴及びそれを使用するめっき方法
JP3481020B2 (ja) * 1995-09-07 2003-12-22 ディップソール株式会社 Ｓｎ−Ｂｉ系合金めっき浴
JP3236220B2 (ja) 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5698503A (en) 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
EP0872870A3 (de) * 1997-04-14 1999-05-06 Hitachi Chemical Co., Ltd. Fluorenszenzmuster, Verfahren zur Herstellung desselben, organische Alkali-Entwicklerlösung zur Bildung desselben, Emulsion-Entwicklerlösung zur Bildung desselben und Rückplatte für Plasmaanzeige brauchend dasselbe
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JPH1167632A (ja) 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
JP3606738B2 (ja) 1998-06-05 2005-01-05 東京応化工業株式会社 アッシング後の処理液およびこれを用いた処理方法
SG77710A1 (en) 1998-09-09 2001-01-16 Tokuyama Corp Photoresist ashing residue cleaning agent
US6828289B2 (en) 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
JP2000247903A (ja) * 1999-03-01 2000-09-12 Chugai Pharmaceut Co Ltd 長期安定化製剤
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6235693B1 (en) 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
JP3410403B2 (ja) 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
JP2001100436A (ja) * 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US6361712B1 (en) * 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
DE60108286T2 (de) 2000-03-27 2005-12-29 Shipley Co., L.L.C., Marlborough Entfernungsmittel für Polymer
US6777380B2 (en) 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6656894B2 (en) * 2000-12-07 2003-12-02 Ashland Inc. Method for cleaning etcher parts
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
JP4945857B2 (ja) * 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
US20030022800A1 (en) 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US7393819B2 (en) * 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US6677286B1 (en) 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
JP2004099488A (ja) * 2002-09-06 2004-04-02 Wako Pure Chem Ind Ltd アミノアルキルスルホン酸の製造方法及びその塩の塩交換方法
TW200413522A (en) 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
KR20050096161A (ko) * 2003-01-29 2005-10-05 아사히 가라스 가부시키가이샤 코팅 조성물, 반사 방지막, 포토레지스트 및 그것을 사용한패턴 형성 방법
SG129274A1 (en) 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
DE602004023269D1 (de) * 2004-03-25 2009-11-05 Procter & Gamble Flüssige Säurereinigungszusammensetzung für harte Oberflächen
JP4369284B2 (ja) 2004-04-19 2009-11-18 東友ファインケム株式会社 レジスト剥離剤
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US7888302B2 (en) 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7682458B2 (en) 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride

Also Published As

Publication number Publication date
CN101000469A (zh) 2007-07-18
KR20070075303A (ko) 2007-07-18
JP4473277B2 (ja) 2010-06-02
TWI336729B (en) 2011-02-01
JP2007188082A (ja) 2007-07-26
US20070161528A1 (en) 2007-07-12
EP1808480B1 (de) 2009-10-07
US7534753B2 (en) 2009-05-19
EP1808480A1 (de) 2007-07-18
SG134245A1 (en) 2007-08-29
DE602007002643D1 (de) 2009-11-19
TW200728455A (en) 2007-08-01

Similar Documents

Publication Publication Date Title
DE602007002643D1 (de) pH-gepufferte, wässrige Reinigungszusammensetzung und Verfahren zur Entfernung von Fotolack-Rückständen
ATE517974T1 (de) Wässrige stripp- und reinigungszusammensetzung
ATE495546T1 (de) Zusammensetzung zum abziehen und reinigen und deren verwendung
DE60030877D1 (de) Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen
MY146827A (en) Aqueous cleaning composition for removing residues and method using same
TW200630482A (en) Aqueous based residue removers comprising fluoride
DE60028962D1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
JP2006526895A5 (de)
JP2002543272A5 (de)
EP1699073A4 (de) Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
ATE509322T1 (de) System und verfahren zum löschen und sperren eines entfernten geräts
ATE420224T1 (de) Verfahren zur korrosionsinhibierung unter verwendung von quaternären ammoniumcarbonaten
TW200613543A (en) Aqueous resist stripper composition
ATE533833T1 (de) Wässrige reinigungszusammensetzung und verwendungsmethode
TW200739281A (en) Cleaning liquid for photolithography and method of recycling use thereof
NO20090748L (no) Fremgangsmate for rensing av montelukast
TW200833824A (en) Solution for removing residue after semiconductor dry process and method of removing the residue using the same
BR0213085A (pt) Método de tratamento de aparelho de destilação e processos de fabrico de ácido carboxìlico aromático e de ácido tereftálico
ATE353475T1 (de) Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche
ATE342329T1 (de) Verfahren zum entfernen von haftendem organischem material
DE602006018734D1 (de) Verfahren zur herstellung einer metrologoschen phase-massenfertigung ohne wesentliche materialabnahme
ATE248862T1 (de) Verfahren zur herstellung von polyguluronsäuren
DE60309036D1 (de) Verfahren zur reinigung der kammer einer zur herstellung von organischen elektrolumineszenzelementen verwendeten vakuumaufdampfanlage
PT1227063E (pt) Metodo para a preparacao de granulos de percarbonato de sodio apresentando estabilidade melhorada
ATE508124T1 (de) Verfahren zur herstellung von amorphem rabeprazole-natrium-salz

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties