ATE509372T1 - Siliziumcarbid-bipolar-transistor und verfahren zu dessen herstellung - Google Patents
Siliziumcarbid-bipolar-transistor und verfahren zu dessen herstellungInfo
- Publication number
- ATE509372T1 ATE509372T1 AT06126735T AT06126735T ATE509372T1 AT E509372 T1 ATE509372 T1 AT E509372T1 AT 06126735 T AT06126735 T AT 06126735T AT 06126735 T AT06126735 T AT 06126735T AT E509372 T1 ATE509372 T1 AT E509372T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon carbide
- epitaxial silicon
- conductivity type
- production
- layer
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 9
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/315,672 US7345310B2 (en) | 2005-12-22 | 2005-12-22 | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE509372T1 true ATE509372T1 (de) | 2011-05-15 |
Family
ID=37898628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06126735T ATE509372T1 (de) | 2005-12-22 | 2006-12-20 | Siliziumcarbid-bipolar-transistor und verfahren zu dessen herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7345310B2 (de) |
| EP (1) | EP1806787B1 (de) |
| JP (1) | JP5095989B2 (de) |
| CN (1) | CN1992337A (de) |
| AT (1) | ATE509372T1 (de) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060211210A1 (en) * | 2004-08-27 | 2006-09-21 | Rensselaer Polytechnic Institute | Material for selective deposition and etching |
| US7977154B2 (en) * | 2006-04-14 | 2011-07-12 | Mississippi State University | Self-aligned methods based on low-temperature selective epitaxial growth for fabricating silicon carbide devices |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| WO2008020911A2 (en) | 2006-08-17 | 2008-02-21 | Cree, Inc. | High power insulated gate bipolar transistors |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| JP5372002B2 (ja) * | 2007-11-09 | 2013-12-18 | クリー インコーポレイテッド | メサ構造とメサ段差を含むバッファ層とを備えた電力半導体デバイス |
| US9640609B2 (en) | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
| US7560325B1 (en) * | 2008-04-14 | 2009-07-14 | Semisouth Laboratories, Inc. | Methods of making lateral junction field effect transistors using selective epitaxial growth |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| US8097919B2 (en) | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
| JP5470254B2 (ja) * | 2008-08-26 | 2014-04-16 | 本田技研工業株式会社 | 接合型半導体装置およびその製造方法 |
| JP5469068B2 (ja) * | 2008-08-26 | 2014-04-09 | 本田技研工業株式会社 | バイポーラ型炭化珪素半導体装置およびその製造方法 |
| US8465799B2 (en) * | 2008-09-18 | 2013-06-18 | International Business Machines Corporation | Method for preparation of flat step-free silicon carbide surfaces |
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| SE533700C2 (sv) * | 2009-03-24 | 2010-12-07 | Transic Ab | Bipolär transistor i kiselkarbid |
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| US8637386B2 (en) | 2009-05-12 | 2014-01-28 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
| US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
| US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
| US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
| US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
| JP2011091179A (ja) * | 2009-10-22 | 2011-05-06 | Honda Motor Co Ltd | バイポーラ型半導体装置およびその製造方法 |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| SE535157C2 (sv) | 2010-07-14 | 2012-05-02 | Fairchild Semiconductor | Konduktivitetsmodulering i en bipolär transistor i kiselkarbid |
| US8552435B2 (en) * | 2010-07-21 | 2013-10-08 | Cree, Inc. | Electronic device structure including a buffer layer on a base layer |
| US8809904B2 (en) | 2010-07-26 | 2014-08-19 | Cree, Inc. | Electronic device structure with a semiconductor ledge layer for surface passivation |
| SE1051137A1 (sv) | 2010-10-29 | 2012-04-30 | Fairchild Semiconductor | Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav |
| US8803277B2 (en) | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
| US9318623B2 (en) | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
| SE1150386A1 (sv) | 2011-05-03 | 2012-11-04 | Fairchild Semiconductor | Bipolär transistor av kiselkarbid med förbättrad genombrottsspänning |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9337268B2 (en) * | 2011-05-16 | 2016-05-10 | Cree, Inc. | SiC devices with high blocking voltage terminated by a negative bevel |
| US9349797B2 (en) | 2011-05-16 | 2016-05-24 | Cree, Inc. | SiC devices with high blocking voltage terminated by a negative bevel |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| EP2754177A1 (de) | 2011-09-11 | 2014-07-16 | Cree, Inc. | Strommodul mit hoher stromdichte und transistoren mit verbesserter konzeption |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| CH707901B1 (de) * | 2012-02-06 | 2017-09-15 | Cree Inc | SIC-Vorrichtung mit hoher Sperrspannung, abgeschlossen durch einen Abflachungskantenabschluss. |
| CN102610638B (zh) * | 2012-03-22 | 2014-04-16 | 西安电子科技大学 | 用于功率集成电路的SiC-BJT器件及其制作方法 |
| WO2013149661A1 (en) * | 2012-04-04 | 2013-10-10 | Fairchild Semiconductor Corporation | Sic bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer |
| CN102856368A (zh) * | 2012-09-27 | 2013-01-02 | 电子科技大学 | 一种功率双极型晶体管及其制备方法 |
| US9425265B2 (en) | 2013-08-16 | 2016-08-23 | Cree, Inc. | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
| US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
| US20180151709A1 (en) * | 2015-06-01 | 2018-05-31 | Hitachi, Ltd. | Semiconductor device, substrate and electrical power conversion device |
| US9825157B1 (en) | 2016-06-29 | 2017-11-21 | Globalfoundries Inc. | Heterojunction bipolar transistor with stress component |
| CN105977287B (zh) * | 2016-07-25 | 2018-11-09 | 电子科技大学 | 一种碳化硅双极结型晶体管 |
| CN108110002B (zh) * | 2017-12-18 | 2020-06-26 | 西安理工大学 | 一种互补型SiC双极集成晶体管及其制作方法 |
| CN108767005B (zh) * | 2018-05-29 | 2021-11-19 | 马鞍山琢学网络科技有限公司 | 一种计算机系统 |
| CN108899361B (zh) * | 2018-07-11 | 2021-06-15 | 北京优捷敏半导体技术有限公司 | 一种碳化硅双极型晶体管及其制造方法 |
| US11563084B2 (en) | 2019-10-01 | 2023-01-24 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor |
| US11404540B2 (en) | 2019-10-01 | 2022-08-02 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor |
| US11355585B2 (en) | 2019-10-01 | 2022-06-07 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor |
| JP7625825B2 (ja) * | 2020-10-21 | 2025-02-04 | 株式会社村田製作所 | 半導体装置 |
| CN113437133B (zh) * | 2021-06-22 | 2022-07-22 | 弘大芯源(深圳)半导体有限公司 | 一种耐二次击穿的功率双极晶体管 |
| CN118553772B (zh) * | 2024-07-25 | 2024-10-18 | 上海合谱微电子技术有限公司 | 射频器件及其制造方法 |
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| US4945394A (en) | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
| US5011549A (en) | 1987-10-26 | 1991-04-30 | North Carolina State University | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon |
| US4912064A (en) | 1987-10-26 | 1990-03-27 | North Carolina State University | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon |
| JP2877395B2 (ja) * | 1989-11-30 | 1999-03-31 | 三洋電機株式会社 | ｓｉｃを用いたトランジスタ |
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| US7148557B2 (en) | 2002-08-29 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor and method for fabricating the same |
| JP2005167035A (ja) * | 2003-12-03 | 2005-06-23 | Kansai Electric Power Co Inc:The | 炭化珪素半導体素子およびその製造方法 |
| US7052932B2 (en) * | 2004-02-24 | 2006-05-30 | Chartered Semiconductor Manufacturing Ltd. | Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication |
| JP4777699B2 (ja) * | 2005-06-13 | 2011-09-21 | 本田技研工業株式会社 | バイポーラ型半導体装置およびその製造方法 |
-
2005
- 2005-12-22 US US11/315,672 patent/US7345310B2/en not_active Expired - Lifetime
-
2006
- 2006-12-20 EP EP06126735A patent/EP1806787B1/de active Active
- 2006-12-20 AT AT06126735T patent/ATE509372T1/de not_active IP Right Cessation
- 2006-12-22 CN CNA2006100642032A patent/CN1992337A/zh active Pending
- 2006-12-22 JP JP2006346041A patent/JP5095989B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1806787A1 (de) | 2007-07-11 |
| JP2007173841A (ja) | 2007-07-05 |
| US20070145378A1 (en) | 2007-06-28 |
| US7345310B2 (en) | 2008-03-18 |
| CN1992337A (zh) | 2007-07-04 |
| EP1806787B1 (de) | 2011-05-11 |
| JP5095989B2 (ja) | 2012-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |