ATE516596T1 - Verfahren zur herstellung einer vertikalen, metall-oxid-halbleiter-feldeffektdiode - Google Patents
Verfahren zur herstellung einer vertikalen, metall-oxid-halbleiter-feldeffektdiodeInfo
- Publication number
- ATE516596T1 ATE516596T1 AT02734352T AT02734352T ATE516596T1 AT E516596 T1 ATE516596 T1 AT E516596T1 AT 02734352 T AT02734352 T AT 02734352T AT 02734352 T AT02734352 T AT 02734352T AT E516596 T1 ATE516596 T1 AT E516596T1
- Authority
- AT
- Austria
- Prior art keywords
- metal oxide
- field effect
- vertical metal
- oxide semiconductor
- semiconductor field
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
- H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Furan Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/864,436 US6537921B2 (en) | 2001-05-23 | 2001-05-23 | Vertical metal oxide silicon field effect semiconductor diodes |
| PCT/US2002/014848 WO2002095835A2 (en) | 2001-05-23 | 2002-05-08 | Vertical metal oxide semiconductor field-effect diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE516596T1 true ATE516596T1 (de) | 2011-07-15 |
Family
ID=25343277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02734352T ATE516596T1 (de) | 2001-05-23 | 2002-05-08 | Verfahren zur herstellung einer vertikalen, metall-oxid-halbleiter-feldeffektdiode |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6537921B2 (de) |
| EP (2) | EP2273554A1 (de) |
| JP (1) | JP4511118B2 (de) |
| KR (1) | KR100883873B1 (de) |
| CN (1) | CN1309092C (de) |
| AT (1) | ATE516596T1 (de) |
| AU (1) | AU2002305526B8 (de) |
| BR (1) | BR0209916A (de) |
| CA (1) | CA2447722A1 (de) |
| IL (2) | IL158845A0 (de) |
| TW (1) | TW558839B (de) |
| WO (1) | WO2002095835A2 (de) |
Families Citing this family (42)
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| US7030680B2 (en) * | 2003-02-26 | 2006-04-18 | Integrated Discrete Devices, Llc | On chip power supply |
| DE10308313B4 (de) * | 2003-02-26 | 2010-08-19 | Siemens Ag | Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren |
| US7105391B2 (en) * | 2004-03-04 | 2006-09-12 | International Business Machines Corporation | Planar pedestal multi gate device |
| JP2006165468A (ja) * | 2004-12-10 | 2006-06-22 | Nec Electronics Corp | 半導体集積回路 |
| JP4790340B2 (ja) * | 2005-07-25 | 2011-10-12 | パナソニック株式会社 | 半導体装置 |
| US7615812B1 (en) | 2006-03-23 | 2009-11-10 | Integrated Discrete Devices, Llc | Field effect semiconductor diodes and processing techniques |
| US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
| EP2232559B1 (de) * | 2007-09-26 | 2019-05-15 | STMicroelectronics N.V. | Einstellbarer feldeffektgleichrichter |
| KR100975404B1 (ko) * | 2008-02-28 | 2010-08-11 | 주식회사 종합건축사사무소근정 | 블록담장용 지주 및 이의 시공방법 |
| KR100955175B1 (ko) * | 2008-03-13 | 2010-04-29 | 주식회사 하이닉스반도체 | 수직형 반도체 소자 및 그 제조 방법 |
| WO2009134812A1 (en) * | 2008-04-28 | 2009-11-05 | Lakota Technologies, Inc. | Mosfet with integrated field effect rectifier |
| KR101010121B1 (ko) * | 2008-07-04 | 2011-01-24 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| US8445947B2 (en) * | 2008-07-04 | 2013-05-21 | Stmicroelectronics (Rousset) Sas | Electronic circuit having a diode-connected MOS transistor with an improved efficiency |
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| US8502336B2 (en) | 2011-05-17 | 2013-08-06 | Semiconductor Components Industries, Llc | Semiconductor diode and method of manufacture |
| US9331065B2 (en) | 2011-05-17 | 2016-05-03 | Semiconductor Components Industries, Llc | Semiconductor diode and method of manufacture |
| FR2982416B1 (fr) | 2011-11-03 | 2014-01-03 | St Microelectronics Sa | Dispositif electronique de protection contre les decharges electrostatiques |
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| US9716187B2 (en) | 2015-03-06 | 2017-07-25 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple trench depths and method |
| US10431699B2 (en) | 2015-03-06 | 2019-10-01 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple active trench depths and method |
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| CN109427878A (zh) * | 2017-08-21 | 2019-03-05 | 中国科学院物理研究所 | 场效应二极管及包括其的全波整流电桥和能量管理电路 |
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-
2001
- 2001-05-23 US US09/864,436 patent/US6537921B2/en not_active Expired - Fee Related
-
2002
- 2002-05-08 BR BR0209916-0A patent/BR0209916A/pt not_active IP Right Cessation
- 2002-05-08 IL IL15884502A patent/IL158845A0/xx active IP Right Grant
- 2002-05-08 EP EP10182553A patent/EP2273554A1/de not_active Withdrawn
- 2002-05-08 AT AT02734352T patent/ATE516596T1/de not_active IP Right Cessation
- 2002-05-08 KR KR1020037015308A patent/KR100883873B1/ko not_active Expired - Fee Related
- 2002-05-08 JP JP2002592200A patent/JP4511118B2/ja not_active Expired - Fee Related
- 2002-05-08 AU AU2002305526A patent/AU2002305526B8/en not_active Ceased
- 2002-05-08 EP EP02734352A patent/EP1393382B1/de not_active Expired - Lifetime
- 2002-05-08 CN CNB028147952A patent/CN1309092C/zh not_active Expired - Fee Related
- 2002-05-08 WO PCT/US2002/014848 patent/WO2002095835A2/en not_active Ceased
- 2002-05-08 CA CA002447722A patent/CA2447722A1/en not_active Abandoned
- 2002-05-23 TW TW091110875A patent/TW558839B/zh not_active IP Right Cessation
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2003
- 2003-11-12 IL IL158845A patent/IL158845A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004531065A (ja) | 2004-10-07 |
| EP1393382B1 (de) | 2011-07-13 |
| AU2002305526B2 (en) | 2006-10-12 |
| JP4511118B2 (ja) | 2010-07-28 |
| BR0209916A (pt) | 2004-08-31 |
| WO2002095835A2 (en) | 2002-11-28 |
| AU2002305526B8 (en) | 2007-02-15 |
| CA2447722A1 (en) | 2002-11-28 |
| TW558839B (en) | 2003-10-21 |
| AU2002305526A1 (en) | 2002-12-03 |
| US20020177324A1 (en) | 2002-11-28 |
| US6537921B2 (en) | 2003-03-25 |
| EP2273554A1 (de) | 2011-01-12 |
| WO2002095835A3 (en) | 2003-07-31 |
| IL158845A (en) | 2007-12-03 |
| CN1309092C (zh) | 2007-04-04 |
| KR20040005982A (ko) | 2004-01-16 |
| CN1545736A (zh) | 2004-11-10 |
| KR100883873B1 (ko) | 2009-02-17 |
| EP1393382A2 (de) | 2004-03-03 |
| IL158845A0 (en) | 2004-05-12 |
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