ATE538188T1 - Polierzusammensetzung - Google Patents
PolierzusammensetzungInfo
- Publication number
- ATE538188T1 ATE538188T1 AT04023363T AT04023363T ATE538188T1 AT E538188 T1 ATE538188 T1 AT E538188T1 AT 04023363 T AT04023363 T AT 04023363T AT 04023363 T AT04023363 T AT 04023363T AT E538188 T1 ATE538188 T1 AT E538188T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing composition
- measured
- particle diameter
- silicon oxide
- laser diffraction
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
- C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
- C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003342531 | 2003-09-30 | ||
| JP2003342530A JP4608196B2 (ja) | 2003-09-30 | 2003-09-30 | 研磨用組成物 |
| JP2003352952A JP2005116987A (ja) | 2003-10-10 | 2003-10-10 | 研磨用組成物 |
| JP2003394593A JP4759219B2 (ja) | 2003-11-25 | 2003-11-25 | 研磨用組成物 |
| JP2003396171A JP4406554B2 (ja) | 2003-09-30 | 2003-11-26 | 研磨用組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE538188T1 true ATE538188T1 (de) | 2012-01-15 |
Family
ID=34317736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04023363T ATE538188T1 (de) | 2003-09-30 | 2004-09-30 | Polierzusammensetzung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7485162B2 (de) |
| EP (3) | EP2418259B1 (de) |
| KR (3) | KR101110707B1 (de) |
| CN (1) | CN100393833C (de) |
| AT (1) | ATE538188T1 (de) |
| SG (1) | SG110211A1 (de) |
| TW (1) | TWI347969B (de) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200526768A (en) * | 2003-09-30 | 2005-08-16 | Fujimi Inc | Polishing composition and polishing method |
| JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP2005268666A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
| JP2006135072A (ja) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | 研磨方法 |
| US7238614B2 (en) * | 2004-11-10 | 2007-07-03 | Inopla Inc. | Methods for fabricating one or more metal damascene structures in a semiconductor wafer |
| JP2006179845A (ja) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
| US7345370B2 (en) | 2005-01-12 | 2008-03-18 | International Business Machines Corporation | Wiring patterns formed by selective metal plating |
| US20060213868A1 (en) * | 2005-03-23 | 2006-09-28 | Siddiqui Junaid A | Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole |
| CN102863943B (zh) * | 2005-08-30 | 2015-03-25 | 花王株式会社 | 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法 |
| KR101278666B1 (ko) * | 2005-09-02 | 2013-06-25 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR20080059266A (ko) * | 2005-09-26 | 2008-06-26 | 플레이너 솔루션즈 엘엘씨 | 화학적 기계적 연마 용도로 사용되기 위한 초고순도의콜로이드 실리카 |
| JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| JP4277930B2 (ja) * | 2005-12-21 | 2009-06-10 | 旭硝子株式会社 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
| EP1984467B1 (de) * | 2006-02-03 | 2012-03-21 | Freescale Semiconductor, Inc. | Barriereschlammzusammensetzungen und cmp-barriereverfahren |
| US7842192B2 (en) * | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
| JP5180185B2 (ja) * | 2006-03-31 | 2013-04-10 | キャボット マイクロエレクトロニクス コーポレイション | 改良された平坦化のためのポリマー抑制剤 |
| SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
| CN101368070A (zh) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | 微晶玻璃加工用的纳米二氧化硅磨料抛光液 |
| JP5329786B2 (ja) * | 2007-08-31 | 2013-10-30 | 株式会社東芝 | 研磨液および半導体装置の製造方法 |
| US7955520B2 (en) * | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
| JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
| US20100193728A1 (en) * | 2008-08-05 | 2010-08-05 | Song-Yuan Chang | Chemical Mechanical Polishing Composition |
| JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| CN102533118B (zh) * | 2010-12-10 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光浆料 |
| JP5992925B2 (ja) * | 2011-01-11 | 2016-09-14 | キャボット マイクロエレクトロニクス コーポレイション | 金属を不動態化する化学機械研磨用組成物及び方法 |
| EP2502969A1 (de) | 2011-03-22 | 2012-09-26 | Basf Se | Chemisch-mechanische Polierzusammensetzung mit zwei Arten von Korrosionshemmern |
| US8309468B1 (en) * | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| KR101144674B1 (ko) * | 2011-07-14 | 2012-05-24 | 에스엔티코리아 주식회사 | 웨이퍼 두께 측정장치 |
| US8865013B2 (en) * | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
| JP6132315B2 (ja) * | 2012-04-18 | 2017-05-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| DE112013005268T5 (de) | 2012-11-02 | 2015-09-24 | Fujimi Incorporated | Polierzusammensetzung |
| CN103865400A (zh) * | 2012-12-10 | 2014-06-18 | 安集微电子(上海)有限公司 | 一种磷酸酯表面活性剂在自停止抛光中的应用 |
| US9012327B2 (en) | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| JP6400897B2 (ja) * | 2013-11-06 | 2018-10-03 | ニッタ・ハース株式会社 | 研磨組成物 |
| CN106661429B (zh) * | 2014-08-26 | 2019-07-05 | 凯斯科技股份有限公司 | 抛光浆料组合物 |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| CN111356747A (zh) * | 2017-11-22 | 2020-06-30 | 巴斯夫欧洲公司 | 化学机械抛光组合物 |
| US10699944B2 (en) | 2018-09-28 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface modification layer for conductive feature formation |
| JP2025058928A (ja) * | 2023-09-27 | 2025-04-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5428721A (en) * | 1990-02-07 | 1995-06-27 | Kabushiki Kaisha Toshiba | Data processing apparatus for editing image by using image conversion |
| JPH06313164A (ja) | 1993-04-28 | 1994-11-08 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
| JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6309560B1 (en) | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6551665B1 (en) | 1997-04-17 | 2003-04-22 | Micron Technology, Inc. | Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers |
| US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| US6093649A (en) * | 1998-08-07 | 2000-07-25 | Rodel Holdings, Inc. | Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
| US6294105B1 (en) * | 1997-12-23 | 2001-09-25 | International Business Machines Corporation | Chemical mechanical polishing slurry and method for polishing metal/oxide layers |
| TW555696B (en) * | 1998-01-08 | 2003-10-01 | Nissan Chemical Ind Ltd | Alumina powder, process for producing the same and polishing composition |
| JP4053165B2 (ja) | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| US6409936B1 (en) * | 1999-02-16 | 2002-06-25 | Micron Technology, Inc. | Composition and method of formation and use therefor in chemical-mechanical polishing |
| JP4188598B2 (ja) * | 1999-08-13 | 2008-11-26 | キャボット マイクロエレクトロニクス コーポレイション | 停止化合物を伴う研磨系及びその使用方法 |
| TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| JP4001219B2 (ja) | 2000-10-12 | 2007-10-31 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
| JP4743941B2 (ja) | 2000-06-30 | 2011-08-10 | Jsr株式会社 | 化学機械研磨用水系分散体 |
| JP3837277B2 (ja) | 2000-06-30 | 2006-10-25 | 株式会社東芝 | 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 |
| JP2002075927A (ja) | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP3825246B2 (ja) * | 2000-11-24 | 2006-09-27 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002321156A (ja) * | 2001-04-19 | 2002-11-05 | Minebea Co Ltd | 研磨洗浄方法 |
| SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US7029373B2 (en) * | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US6677239B2 (en) * | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
| JP3899456B2 (ja) * | 2001-10-19 | 2007-03-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| JP3692067B2 (ja) * | 2001-11-30 | 2005-09-07 | 株式会社東芝 | 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法 |
| JP2003234315A (ja) * | 2001-12-04 | 2003-08-22 | Sanyo Chem Ind Ltd | Cmpプロセス用研磨液 |
| DE10164262A1 (de) * | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
| JP4187497B2 (ja) * | 2002-01-25 | 2008-11-26 | Jsr株式会社 | 半導体基板の化学機械研磨方法 |
| US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
| JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
| JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
-
2004
- 2004-09-29 US US10/952,672 patent/US7485162B2/en not_active Expired - Lifetime
- 2004-09-29 TW TW093129391A patent/TWI347969B/zh not_active IP Right Cessation
- 2004-09-30 EP EP11186466A patent/EP2418259B1/de not_active Expired - Lifetime
- 2004-09-30 EP EP04023363A patent/EP1520892B1/de not_active Expired - Lifetime
- 2004-09-30 SG SG200406144A patent/SG110211A1/en unknown
- 2004-09-30 CN CNB2004100834419A patent/CN100393833C/zh not_active Expired - Fee Related
- 2004-09-30 EP EP11186467A patent/EP2418260B1/de not_active Expired - Lifetime
- 2004-09-30 KR KR1020040077822A patent/KR101110707B1/ko not_active Expired - Fee Related
- 2004-09-30 AT AT04023363T patent/ATE538188T1/de active
-
2011
- 2011-06-14 KR KR1020110057408A patent/KR101216514B1/ko not_active Expired - Fee Related
- 2011-06-14 KR KR1020110057412A patent/KR101074875B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2418259B1 (de) | 2013-02-13 |
| US7485162B2 (en) | 2009-02-03 |
| KR20110084481A (ko) | 2011-07-25 |
| EP2418260B1 (de) | 2013-02-13 |
| KR101216514B1 (ko) | 2012-12-31 |
| SG110211A1 (en) | 2005-04-28 |
| EP1520892B1 (de) | 2011-12-21 |
| CN100393833C (zh) | 2008-06-11 |
| CN1616575A (zh) | 2005-05-18 |
| KR20050031992A (ko) | 2005-04-06 |
| TW200532007A (en) | 2005-10-01 |
| EP1520892A2 (de) | 2005-04-06 |
| KR101074875B1 (ko) | 2011-10-19 |
| KR20110084482A (ko) | 2011-07-25 |
| KR101110707B1 (ko) | 2012-04-16 |
| EP2418260A1 (de) | 2012-02-15 |
| US20050108949A1 (en) | 2005-05-26 |
| TWI347969B (en) | 2011-09-01 |
| EP2418259A1 (de) | 2012-02-15 |
| EP1520892A3 (de) | 2006-06-21 |
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