ATE75340T1 - Statische ram-zellen mit vier transistoren. - Google Patents
Statische ram-zellen mit vier transistoren.Info
- Publication number
- ATE75340T1 ATE75340T1 AT87310856T AT87310856T ATE75340T1 AT E75340 T1 ATE75340 T1 AT E75340T1 AT 87310856 T AT87310856 T AT 87310856T AT 87310856 T AT87310856 T AT 87310856T AT E75340 T1 ATE75340 T1 AT E75340T1
- Authority
- AT
- Austria
- Prior art keywords
- gate
- transistors
- pull
- pass
- separate
- Prior art date
Links
- 230000003068 static effect Effects 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US821587A | 1987-01-28 | 1987-01-28 | |
| EP87310856A EP0281711B1 (de) | 1987-01-28 | 1987-12-10 | Statische RAM-Zellen mit vier Transistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE75340T1 true ATE75340T1 (de) | 1992-05-15 |
Family
ID=21730396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT87310856T ATE75340T1 (de) | 1987-01-28 | 1987-12-10 | Statische ram-zellen mit vier transistoren. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0281711B1 (de) |
| JP (1) | JP2747540B2 (de) |
| AT (1) | ATE75340T1 (de) |
| DE (1) | DE3778533D1 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246264A (ja) * | 1989-03-20 | 1990-10-02 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP2946567B2 (ja) * | 1989-11-15 | 1999-09-06 | ソニー株式会社 | メモリ半導体構造及び位相シフトマスク |
| KR100199258B1 (ko) * | 1990-02-09 | 1999-06-15 | 가나이 쓰도무 | 반도체집적회로장치 |
| DE69023765T2 (de) * | 1990-07-31 | 1996-06-20 | Ibm | Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur. |
| EP0469217B1 (de) * | 1990-07-31 | 1996-04-10 | International Business Machines Corporation | Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten selbstjustierten Feldeffekttransistoren aus Polisilizium und sich daraus ergebende Struktur |
| EP0469214A1 (de) * | 1990-07-31 | 1992-02-05 | International Business Machines Corporation | Verfahren zur Herstellung geschichteter Leiter- und/oder Widerstandsbereiche in Multiebenen-Halbleiterbauelementen und daraus resultierende Struktur |
| JPH0541378A (ja) * | 1991-03-15 | 1993-02-19 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH07235645A (ja) * | 1993-12-29 | 1995-09-05 | Mitsubishi Electric Corp | スタティック型半導体記憶装置およびその製造方法 |
| JPH08125137A (ja) * | 1994-10-28 | 1996-05-17 | Nec Corp | 半導体記憶装置 |
| JP3701405B2 (ja) | 1996-08-27 | 2005-09-28 | 株式会社ルネサステクノロジ | スタティック型半導体記憶装置 |
| US5804470A (en) * | 1996-10-23 | 1998-09-08 | Advanced Micro Devices, Inc. | Method of making a selective epitaxial growth circuit load element |
| WO2003023847A2 (en) * | 2001-09-13 | 2003-03-20 | Koninklijke Philips Electronics N.V. | Integrated circuit, portable device and method for manufacturing an integrated circuit |
| CN113138527B (zh) * | 2020-01-16 | 2024-04-02 | 中芯国际集成电路制造(上海)有限公司 | 掩膜版、存储单元、sram器件 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400712A (en) * | 1981-02-13 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Static bipolar random access memory |
| JPS57210663A (en) * | 1981-06-19 | 1982-12-24 | Hitachi Ltd | Semiconductor memory device |
| EP0087979B1 (de) * | 1982-03-03 | 1989-09-06 | Fujitsu Limited | Halbleiter-Speichervorrichtung |
| US4554644A (en) * | 1982-06-21 | 1985-11-19 | Fairchild Camera & Instrument Corporation | Static RAM cell |
| JPS60161659A (ja) * | 1984-02-01 | 1985-08-23 | Hitachi Ltd | 半導体集積回路装置 |
| JPS60254653A (ja) * | 1984-05-30 | 1985-12-16 | Fujitsu Ltd | 半導体記憶装置 |
| JPS6386561A (ja) * | 1986-09-30 | 1988-04-16 | Sony Corp | メモリ装置 |
| JPS63131567A (ja) * | 1986-11-21 | 1988-06-03 | Sony Corp | メモリ装置 |
-
1987
- 1987-12-10 AT AT87310856T patent/ATE75340T1/de not_active IP Right Cessation
- 1987-12-10 DE DE8787310856T patent/DE3778533D1/de not_active Expired - Lifetime
- 1987-12-10 EP EP87310856A patent/EP0281711B1/de not_active Expired - Lifetime
-
1988
- 1988-01-27 JP JP63016754A patent/JP2747540B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3778533D1 (de) | 1992-05-27 |
| EP0281711B1 (de) | 1992-04-22 |
| EP0281711A3 (en) | 1989-05-24 |
| EP0281711A2 (de) | 1988-09-14 |
| JP2747540B2 (ja) | 1998-05-06 |
| JPS63193558A (ja) | 1988-08-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |