ATE85966T1 - Siliziumcarbidsinterkoerper mit hohem elektrischem widerstand. - Google Patents

Siliziumcarbidsinterkoerper mit hohem elektrischem widerstand.

Info

Publication number
ATE85966T1
ATE85966T1 AT86305906T AT86305906T ATE85966T1 AT E85966 T1 ATE85966 T1 AT E85966T1 AT 86305906 T AT86305906 T AT 86305906T AT 86305906 T AT86305906 T AT 86305906T AT E85966 T1 ATE85966 T1 AT E85966T1
Authority
AT
Austria
Prior art keywords
silicon carbide
sup
high electrical
percent
sintered body
Prior art date
Application number
AT86305906T
Other languages
English (en)
Inventor
Wolfgang D G Boecker
Laurence N Hailey
Carl Hewes Mcmurtry
Original Assignee
Carborundum Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carborundum Co filed Critical Carborundum Co
Application granted granted Critical
Publication of ATE85966T1 publication Critical patent/ATE85966T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
AT86305906T 1985-10-17 1986-07-31 Siliziumcarbidsinterkoerper mit hohem elektrischem widerstand. ATE85966T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/789,066 US4701427A (en) 1985-10-17 1985-10-17 Sintered silicon carbide ceramic body of high electrical resistivity
EP86305906A EP0219933B1 (de) 1985-10-17 1986-07-31 Siliziumcarbidsinterkörper mit hohem elektrischem Widerstand

Publications (1)

Publication Number Publication Date
ATE85966T1 true ATE85966T1 (de) 1993-03-15

Family

ID=25146491

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86305906T ATE85966T1 (de) 1985-10-17 1986-07-31 Siliziumcarbidsinterkoerper mit hohem elektrischem widerstand.

Country Status (8)

Country Link
US (1) US4701427A (de)
EP (1) EP0219933B1 (de)
KR (1) KR940001657B1 (de)
AT (1) ATE85966T1 (de)
AU (1) AU575011B2 (de)
BR (1) BR8604726A (de)
CA (1) CA1267915A (de)
DE (1) DE3687817T2 (de)

Families Citing this family (34)

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SE450857B (sv) * 1985-02-21 1987-08-03 Asea Ab Forfarande for uppbyggnad av ljusbagslikstromsugnar eller -skenkar
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
JPH01242465A (ja) * 1988-03-23 1989-09-27 Showa Denko Kk 炭化珪素焼結体およびその摺動部材の製造方法
DE3834325A1 (de) * 1988-10-08 1990-04-12 Bayer Ag Sic-pulver, verfahren zu seiner herstellung sowie dessen verwendung sowie entsprechende sic-sinterkoerper
US4962069A (en) * 1988-11-07 1990-10-09 Dow Corning Corporation Highly densified bodies from preceramic polysilazanes filled with silicon carbide powders
GB8918319D0 (en) * 1989-08-10 1989-09-20 British Petroleum Co Plc Improved sintering process and novel ceramic material
US5250244A (en) * 1989-09-26 1993-10-05 Ngk Spark Plug Company, Ltd. Method of producing sintered ceramic body
US5408574A (en) * 1989-12-01 1995-04-18 Philip Morris Incorporated Flat ceramic heater having discrete heating zones
DK170189B1 (da) * 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
US5468936A (en) * 1993-03-23 1995-11-21 Philip Morris Incorporated Heater having a multiple-layer ceramic substrate and method of fabrication
US5322824A (en) * 1993-05-27 1994-06-21 Chia Kai Y Electrically conductive high strength dense ceramic
JP4080030B2 (ja) 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
JP4610039B2 (ja) 2000-03-31 2011-01-12 ラム リサーチ コーポレーション プラズマ処理装置
JP3607939B2 (ja) * 2000-06-16 2005-01-05 独立行政法人産業技術総合研究所 炭化ケイ素−窒化ホウ素複合材料の反応合成
JP2002047066A (ja) * 2000-08-02 2002-02-12 Tokai Carbon Co Ltd ＳｉＣ成形体およびその製造方法
DE10045339A1 (de) * 2000-09-14 2002-04-04 Wacker Chemie Gmbh Mit Grafit beschichteter Formkörper aus gesintertem Siliciumcarbid
KR100498441B1 (ko) 2001-04-17 2005-07-01 삼성전자주식회사 광근접 효과의 보정을 위한 마스크와 그 제조 방법
US6616890B2 (en) 2001-06-15 2003-09-09 Harvest Precision Components, Inc. Fabrication of an electrically conductive silicon carbide article
US6887421B2 (en) * 2002-01-14 2005-05-03 Redunndant Materials, Inc. Method for making a silicon carbide resistor with silicon/silicon carbide contacts by induction heating
JP3764157B2 (ja) * 2003-10-10 2006-04-05 東洋炭素株式会社 高純度炭素系材料及びセラミックス膜被覆高純度炭素系材料
JPWO2006112052A1 (ja) * 2005-03-30 2008-11-27 イビデン株式会社 炭化珪素含有粒子、炭化珪素質焼結体を製造する方法、炭化珪素質焼結体、及びフィルター
US7838976B2 (en) * 2006-07-28 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a semiconductor chip enclosed by a body structure and a base
US7727919B2 (en) * 2007-10-29 2010-06-01 Saint-Gobain Ceramics & Plastics, Inc. High resistivity silicon carbide
US7989380B2 (en) * 2008-11-26 2011-08-02 Ceradyne, Inc. High resistivity SiC material with B, N and O as the only additions
KR101155586B1 (ko) * 2009-01-23 2012-06-19 프리시젼다이아몬드 주식회사 다이아몬드 공구 및 그 제조방법
WO2011011601A2 (en) * 2009-07-24 2011-01-27 Saint Gobain Ceramics & Plastics, Inc. High toughness ceramic composites
US20110151192A1 (en) * 2009-12-21 2011-06-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative articles and method of making
DE102012012227B4 (de) 2011-06-30 2024-07-18 QSIL Ingenieurkeramik GmbH Herstellung dichter Siliziumcarbid-Sinterkörper mit gezielt einstellbarem elektrischem Widerstand und so erhältliche Siliciumcarbid-Sinterkörper
NO335994B1 (no) * 2011-10-13 2015-04-13 Saint Gobain Ceramic Mat As Fremgangsmåte for fremstilling av korn som er nyttige for fremstillingen av et silisiumkarbidbasert sintret produkt, komposittkorn fremstilt ved fremgangsmåten, samt anvendelse av kornene.
WO2021085587A1 (ja) 2019-10-31 2021-05-06 京セラ株式会社 配線基板、電子装置及び電子モジュール
FR3122423B3 (fr) * 2021-04-30 2023-09-08 Saint Gobain Ct Recherches Materiau fritte dense de carbure de silicium a tres faible resistivite electrique
CN116023145A (zh) * 2022-12-29 2023-04-28 湖南福德电气有限公司 一种碳化硅系压敏电阻的制备方法
CN116623297B (zh) * 2023-07-25 2023-10-27 北京青禾晶元半导体科技有限责任公司 一种碳化硅复合衬底及其制备方法和应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004934A (en) * 1973-10-24 1977-01-25 General Electric Company Sintered dense silicon carbide
US4312954A (en) * 1975-06-05 1982-01-26 Kennecott Corporation Sintered silicon carbide ceramic body
US4135938A (en) * 1977-03-31 1979-01-23 The Carborundum Company High density thermal shock resistant sintered silicon carbide
US4144207A (en) * 1977-12-27 1979-03-13 The Carborundum Company Composition and process for injection molding ceramic materials
DE2809278A1 (de) * 1978-03-03 1979-09-06 Kempten Elektroschmelz Gmbh Dichte polykristalline formkoerper aus alpha-siliciumcarbid und verfahren zu ihrer herstellung durch drucklose sinterung
DE3064598D1 (en) * 1979-11-05 1983-09-22 Hitachi Ltd Electrically insulating substrate and a method of making such a substrate
JPS57180005A (en) * 1981-04-30 1982-11-05 Hitachi Ltd Silicon carbide electric insulator with low dielectric constant
JPS5899172A (ja) * 1981-12-07 1983-06-13 株式会社日立製作所 電気絶縁基板
EP0143122A3 (de) * 1983-08-26 1987-02-04 Shin-Etsu Chemical Co., Ltd. Ultrafeines Siliziumkarbid-Pulver, Verfahren zu seiner Herstellung und daraus hergestellter gesinterter Formkörper
JPS60151276A (ja) * 1984-01-18 1985-08-09 信越化学工業株式会社 炭化けい素焼結体の製造方法
JPS60176913A (ja) * 1984-02-20 1985-09-11 Shin Etsu Chem Co Ltd 絶縁性炭化けい素粉末およびその製造方法
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
US5769184A (en) * 1996-09-27 1998-06-23 Brooks Automation, Inc. Coaxial drive elevator

Also Published As

Publication number Publication date
BR8604726A (pt) 1987-06-23
EP0219933B1 (de) 1993-02-24
CA1267915A (en) 1990-04-17
DE3687817T2 (de) 1993-06-17
KR940001657B1 (ko) 1994-02-28
KR870003953A (ko) 1987-05-06
EP0219933A3 (en) 1988-11-17
EP0219933A2 (de) 1987-04-29
US4701427A (en) 1987-10-20
AU6111686A (en) 1987-04-30
DE3687817D1 (de) 1993-04-01
AU575011B2 (en) 1988-07-14

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