NO20064056L - Mikroelektronisk rensesammensetning inneholdende halogenoksygensyrer, salter og derivater derav - Google Patents
Mikroelektronisk rensesammensetning inneholdende halogenoksygensyrer, salter og derivater deravInfo
- Publication number
- NO20064056L NO20064056L NO20064056A NO20064056A NO20064056L NO 20064056 L NO20064056 L NO 20064056L NO 20064056 A NO20064056 A NO 20064056A NO 20064056 A NO20064056 A NO 20064056A NO 20064056 L NO20064056 L NO 20064056L
- Authority
- NO
- Norway
- Prior art keywords
- microelectronic
- derivatives
- salts
- composition containing
- cleaning compositions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Det beskrives mikroelektronikk renseblandinger for rengjøring av mikroelektroniske substrater og særlig rengjøringsblandinger som er brukbare med og som har forbedret kompatibilitet med mikroelektronikksubstrater som karakteriseres ved silisiumdioksid, sensitiv lav-K- eller høy-K-dielektrika og kobber-, wolfrairn-, tantal-, nikkel-, gull-, kobolt-, palladium-, platina-, krom-, ruthenium-, rhodium-, iridium-, hafhium-, titan-, molybden-, tinn- og andre metalliseringer så vel som substrater av Al eller AI(Cu) metalliseringer og avanserte interforbindelsesteknologier. Renseblandingene for mikroelektronikk omfatter hallogensyrer, salter og derivater derav.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54380104P | 2004-02-11 | 2004-02-11 | |
| PCT/US2004/037135 WO2005083523A1 (en) | 2004-02-11 | 2004-11-05 | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20064056L true NO20064056L (no) | 2006-11-07 |
Family
ID=34700209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20064056A NO20064056L (no) | 2004-02-11 | 2006-09-08 | Mikroelektronisk rensesammensetning inneholdende halogenoksygensyrer, salter og derivater derav |
Country Status (19)
| Country | Link |
|---|---|
| US (1) | US7521406B2 (no) |
| EP (1) | EP1564595B1 (no) |
| JP (3) | JP4208826B2 (no) |
| KR (2) | KR101316993B1 (no) |
| CN (3) | CN1954267B (no) |
| AT (1) | ATE449362T1 (no) |
| BR (1) | BRPI0418529A (no) |
| CA (1) | CA2555665C (no) |
| DE (1) | DE602005017684D1 (no) |
| DK (1) | DK1564595T3 (no) |
| ES (1) | ES2334359T3 (no) |
| IL (1) | IL177305A (no) |
| NO (1) | NO20064056L (no) |
| PL (1) | PL1564595T3 (no) |
| PT (1) | PT1564595E (no) |
| SG (1) | SG150508A1 (no) |
| TW (1) | TWI318238B (no) |
| WO (1) | WO2005083523A1 (no) |
| ZA (1) | ZA200606544B (no) |
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| PL1664935T3 (pl) * | 2003-08-19 | 2008-01-31 | Avantor Performance Mat Inc | Kompozycje do usuwania powłok oraz czyszczenia dla mikroelektroniki |
| EP1680806A4 (en) * | 2003-10-28 | 2008-07-30 | Sachem Inc | CLEANING SOLUTIONS AND MEDICAMENTS AND METHOD FOR THEIR USE |
| BRPI0418529A (pt) | 2004-02-11 | 2007-05-15 | Mallinckrodt Baker Inc | composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos |
| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
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| US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
| EP1866957A1 (en) * | 2005-04-08 | 2007-12-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| US8772214B2 (en) * | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
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| US20100081595A1 (en) * | 2007-01-22 | 2010-04-01 | Freescale Semiconductor, Inc | Liquid cleaning composition and method for cleaning semiconductor devices |
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| KR102769981B1 (ko) * | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
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| JP7819114B2 (ja) * | 2020-11-26 | 2026-02-24 | 株式会社トクヤマ | 半導体ウェハの処理液及びその製造方法 |
| KR20230122586A (ko) * | 2020-12-25 | 2023-08-22 | 가부시끼가이샤 도꾸야마 | 천이 금속을 포함하는 반도체의 처리 방법, 천이 금속을 포함하는 반도체의 제조 방법 및 반도체용 처리액 |
| CN116724143A (zh) * | 2021-01-19 | 2023-09-08 | 朗姆研究公司 | 具有金属蚀刻残留物的室部件的清洁方法 |
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| US12601975B2 (en) * | 2021-06-17 | 2026-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Compositions for reducing resist consumption of extreme ultraviolet metallic type resist |
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-
2004
- 2004-11-05 BR BRPI0418529-3A patent/BRPI0418529A/pt not_active IP Right Cessation
- 2004-11-05 CN CN2004800416026A patent/CN1954267B/zh not_active Expired - Lifetime
- 2004-11-05 CA CA2555665A patent/CA2555665C/en not_active Expired - Fee Related
- 2004-11-05 US US10/982,330 patent/US7521406B2/en active Active
- 2004-11-05 WO PCT/US2004/037135 patent/WO2005083523A1/en not_active Ceased
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