CA1286798C - Methode de fabrication d'un dispositif, y compris la deposition d'un materiau a teneur de metal, et dispositif ainsi produit - Google Patents

Methode de fabrication d'un dispositif, y compris la deposition d'un materiau a teneur de metal, et dispositif ainsi produit

Info

Publication number
CA1286798C
CA1286798C CA000539354A CA539354A CA1286798C CA 1286798 C CA1286798 C CA 1286798C CA 000539354 A CA000539354 A CA 000539354A CA 539354 A CA539354 A CA 539354A CA 1286798 C CA1286798 C CA 1286798C
Authority
CA
Canada
Prior art keywords
metal
drain
source
substrate
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000539354A
Other languages
English (en)
Inventor
Patrick Kent Gallagher
Roland Albert Levy
Martin Laurence Green
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of CA1286798C publication Critical patent/CA1286798C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43Chemical deposition, e.g. chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
CA000539354A 1986-06-16 1987-06-10 Methode de fabrication d'un dispositif, y compris la deposition d'un materiau a teneur de metal, et dispositif ainsi produit Expired - Fee Related CA1286798C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87447586A 1986-06-16 1986-06-16
US874,475 1986-06-16

Publications (1)

Publication Number Publication Date
CA1286798C true CA1286798C (fr) 1991-07-23

Family

ID=25363874

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000539354A Expired - Fee Related CA1286798C (fr) 1986-06-16 1987-06-10 Methode de fabrication d'un dispositif, y compris la deposition d'un materiau a teneur de metal, et dispositif ainsi produit

Country Status (6)

Country Link
EP (1) EP0268654A1 (fr)
JP (1) JPH0680682B2 (fr)
KR (1) KR920010125B1 (fr)
CA (1) CA1286798C (fr)
ES (1) ES2006502A6 (fr)
WO (1) WO1987007763A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814545A (en) * 1995-10-02 1998-09-29 Motorola, Inc. Semiconductor device having a phosphorus doped PECVD film and a method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
EP0178200A1 (fr) * 1984-09-10 1986-04-16 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Procédé de régulation du dépôt chimique en phase vapeur
EP0194950B1 (fr) * 1985-03-15 1992-05-27 Fairchild Semiconductor Corporation Système d'interconnexion à haute température pour un circuit intégré

Also Published As

Publication number Publication date
JPH0680682B2 (ja) 1994-10-12
EP0268654A1 (fr) 1988-06-01
ES2006502A6 (es) 1989-05-01
KR880701458A (ko) 1988-07-27
JPS63503581A (ja) 1988-12-22
KR920010125B1 (ko) 1992-11-16
WO1987007763A1 (fr) 1987-12-17

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