JPH0680682B2 - デバイスの製造法 - Google Patents

デバイスの製造法

Info

Publication number: JPH0680682B2
Authority: JP; Japan
Prior art keywords: source; drain; metal; silicon; substrate
Prior art date: 1986-06-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP62503471A

Other languages

English (en)

Japanese (ja)

Other versions

JPS63503581A (ja

Inventor

ケントガラハー，パトリック

ローレンスグリーン，マーチン

アルバートレヴィ，ローランド

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

AT&T Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-16

Filing date

1987-05-27

Publication date

1994-10-12

1987-05-27 Application filed by AT&T Corp filed Critical AT&T Corp

1988-12-22 Publication of JPS63503581A publication Critical patent/JPS63503581A/ja

1994-10-12 Publication of JPH0680682B2 publication Critical patent/JPH0680682B2/ja

2009-10-12 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour

Landscapes

Electrodes Of Semiconductors (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Chemical Vapour Deposition (AREA)

JP62503471A 1986-06-16 1987-05-27 デバイスの製造法 Expired - Lifetime JPH0680682B2 (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US87447586A	1986-06-16	1986-06-16
US874475		1986-06-16
PCT/US1987/001230 WO1987007763A1 (fr)	1986-06-16	1987-05-27	Procede de fabrication de dispositifs par deposition en phase gazeuse par procede chimique, et dispositifs ainsi realises

Publications (2)

Publication Number	Publication Date
JPS63503581A JPS63503581A (ja)	1988-12-22
JPH0680682B2 true JPH0680682B2 (ja)	1994-10-12

Family

ID=25363874

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62503471A Expired - Lifetime JPH0680682B2 (ja)	1986-06-16	1987-05-27	デバイスの製造法

Country Status (6)

Country	Link
EP (1)	EP0268654A1 (fr)
JP (1)	JPH0680682B2 (fr)
KR (1)	KR920010125B1 (fr)
CA (1)	CA1286798C (fr)
ES (1)	ES2006502A6 (fr)
WO (1)	WO1987007763A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5814545A (en) *	1995-10-02	1998-09-29	Motorola, Inc.	Semiconductor device having a phosphorus doped PECVD film and a method of manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6050920A (ja) *	1983-08-30	1985-03-22	Toshiba Corp	半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0178200A1 (fr) *	1984-09-10	1986-04-16	FAIRCHILD CAMERA & INSTRUMENT CORPORATION	Procédé de régulation du dépôt chimique en phase vapeur
DE3685449D1 (fr) *	1985-03-15	1992-07-02	Fairchild Semiconductor Corp., Cupertino, Calif., Us

1987
- 1987-05-27 EP EP87903799A patent/EP0268654A1/fr not_active Ceased
- 1987-05-27 KR KR1019880700174A patent/KR920010125B1/ko not_active Expired
- 1987-05-27 JP JP62503471A patent/JPH0680682B2/ja not_active Expired - Lifetime
- 1987-05-27 WO PCT/US1987/001230 patent/WO1987007763A1/fr not_active Ceased
- 1987-06-10 CA CA000539354A patent/CA1286798C/fr not_active Expired - Fee Related
- 1987-06-12 ES ES8701744A patent/ES2006502A6/es not_active Expired

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6050920A (ja) *	1983-08-30	1985-03-22	Toshiba Corp	半導体装置の製造方法

Also Published As

Publication number	Publication date
KR920010125B1 (ko)	1992-11-16
CA1286798C (fr)	1991-07-23
WO1987007763A1 (fr)	1987-12-17
ES2006502A6 (es)	1989-05-01
EP0268654A1 (fr)	1988-06-01
KR880701458A (ko)	1988-07-27
JPS63503581A (ja)	1988-12-22

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Legal Events

Date	Code	Title	Description
2004-10-12	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2005-10-11	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2006-10-10	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2007-05-27	EXPY	Cancellation because of completion of term
2007-08-15	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20071012 Year of fee payment: 13