CA2006745A1 - Transistor a tranchee a drain legerement dope et sa methode de fabrication - Google Patents

Transistor a tranchee a drain legerement dope et sa methode de fabrication

Info

Publication number
CA2006745A1
CA2006745A1 CA2006745A CA2006745A CA2006745A1 CA 2006745 A1 CA2006745 A1 CA 2006745A1 CA 2006745 A CA2006745 A CA 2006745A CA 2006745 A CA2006745 A CA 2006745A CA 2006745 A1 CA2006745 A1 CA 2006745A1
Authority
CA
Canada
Prior art keywords
doped drain
trench
lightly
fabrication process
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2006745A
Other languages
English (en)
Other versions
CA2006745C (fr
Inventor
Sang H. Dhong
Wei Hwang
Nicky C.-C. Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CA2006745A1 publication Critical patent/CA2006745A1/fr
Application granted granted Critical
Publication of CA2006745C publication Critical patent/CA2006745C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA002006745A 1989-05-22 1989-12-27 Transistor a tranchee a drain legerement dope et sa methode de fabrication Expired - Fee Related CA2006745C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/355/232 1989-05-22
US07/355,232 US4954854A (en) 1989-05-22 1989-05-22 Cross-point lightly-doped drain-source trench transistor and fabrication process therefor

Publications (2)

Publication Number Publication Date
CA2006745A1 true CA2006745A1 (fr) 1990-11-22
CA2006745C CA2006745C (fr) 1993-06-15

Family

ID=23396717

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002006745A Expired - Fee Related CA2006745C (fr) 1989-05-22 1989-12-27 Transistor a tranchee a drain legerement dope et sa methode de fabrication

Country Status (5)

Country Link
US (1) US4954854A (fr)
EP (1) EP0399191B1 (fr)
JP (1) JPH079991B2 (fr)
CA (1) CA2006745C (fr)
DE (1) DE69011736T2 (fr)

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DE10221808B4 (de) 2001-05-18 2010-01-07 Fuji Electric Co., Ltd., Kawasaki Verfahren zur Herstellung eines lateralen MOSFETs
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US6882000B2 (en) * 2001-08-10 2005-04-19 Siliconix Incorporated Trench MIS device with reduced gate-to-drain capacitance
DE10258443A1 (de) 2001-12-18 2003-07-03 Fuji Electric Co Ltd Halbleiterbauelement
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
DE10230715B4 (de) * 2002-07-08 2006-12-21 Infineon Technologies Ag Verfahren zur Herstellung eines Vertikaltransistors
US6930004B2 (en) * 2003-08-13 2005-08-16 International Business Machines Corporation Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling
AT504290A2 (de) * 2005-06-10 2008-04-15 Fairchild Semiconductor Feldeffekttransistor mit ladungsgleichgewicht
TWI400757B (zh) * 2005-06-29 2013-07-01 快捷半導體公司 形成遮蔽閘極場效應電晶體之方法
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
CN100495758C (zh) * 2005-12-02 2009-06-03 中华映管股份有限公司 有机薄膜晶体管及其制造方法
US7358133B2 (en) * 2005-12-28 2008-04-15 Nanya Technology Corporation Semiconductor device and method for making the same
US8350318B2 (en) * 2006-03-06 2013-01-08 Semiconductor Components Industries, Llc Method of forming an MOS transistor and structure therefor
US7956387B2 (en) * 2006-09-08 2011-06-07 Qimonda Ag Transistor and memory cell array
US7544571B2 (en) * 2006-09-20 2009-06-09 Fairchild Semiconductor Corporation Trench gate FET with self-aligned features
US20080124870A1 (en) * 2006-09-20 2008-05-29 Chanho Park Trench Gate FET with Self-Aligned Features
US8115251B2 (en) * 2007-04-30 2012-02-14 International Business Machines Corporation Recessed gate channel with low Vt corner
US9484451B2 (en) * 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US20120007170A1 (en) * 2010-07-09 2012-01-12 Chao-Cheng Lu High source to drain breakdown voltage vertical field effect transistors
US20120018800A1 (en) * 2010-07-22 2012-01-26 Suku Kim Trench Superjunction MOSFET with Thin EPI Process
JP2012134439A (ja) * 2010-11-30 2012-07-12 Elpida Memory Inc 半導体装置及びその製造方法
US9054133B2 (en) 2011-09-21 2015-06-09 Globalfoundries Singapore Pte. Ltd. High voltage trench transistor
US8492226B2 (en) * 2011-09-21 2013-07-23 Globalfoundries Singapore Pte. Ltd. Trench transistor
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
JP2013143424A (ja) * 2012-01-10 2013-07-22 Elpida Memory Inc 半導体装置及びその製造方法
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US8796760B2 (en) * 2012-03-14 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and method of manufacturing the same
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
WO2014115642A1 (fr) * 2013-01-28 2014-07-31 ピーエスフォー ルクスコ エスエイアールエル Dispositif à semi-conducteur et son procédé de fabrication
US20150117110A1 (en) * 2013-10-31 2015-04-30 Zhijiong Luo Connecting storage gate memory
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管
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CN109326595B (zh) 2017-07-31 2021-03-09 联华电子股份有限公司 半导体元件及其制作方法
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法
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Also Published As

Publication number Publication date
DE69011736T2 (de) 1995-03-30
JPH034560A (ja) 1991-01-10
EP0399191A1 (fr) 1990-11-28
DE69011736D1 (de) 1994-09-29
JPH079991B2 (ja) 1995-02-01
US4954854A (en) 1990-09-04
EP0399191B1 (fr) 1994-08-24
CA2006745C (fr) 1993-06-15

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