CA2013245A1 - Masque de lithographie aux rayons x et dispositifs incorporant ce masque - Google Patents

Masque de lithographie aux rayons x et dispositifs incorporant ce masque

Info

Publication number
CA2013245A1
CA2013245A1 CA2013245A CA2013245A CA2013245A1 CA 2013245 A1 CA2013245 A1 CA 2013245A1 CA 2013245 A CA2013245 A CA 2013245A CA 2013245 A CA2013245 A CA 2013245A CA 2013245 A1 CA2013245 A1 CA 2013245A1
Authority
CA
Canada
Prior art keywords
silicon
substrate
ray lithography
oxide containing
devices made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2013245A
Other languages
English (en)
Other versions
CA2013245C (fr
Inventor
George K. Celler
Lee Edward Trimble
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2013245A1 publication Critical patent/CA2013245A1/fr
Application granted granted Critical
Publication of CA2013245C publication Critical patent/CA2013245C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CA002013245A 1989-05-26 1990-03-28 Masque de lithographie aux rayons x et dispositifs incorporant ce masque Expired - Fee Related CA2013245C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/358,312 US5051326A (en) 1989-05-26 1989-05-26 X-Ray lithography mask and devices made therewith
US358,312 1989-05-26

Publications (2)

Publication Number Publication Date
CA2013245A1 true CA2013245A1 (fr) 1990-11-26
CA2013245C CA2013245C (fr) 1994-04-19

Family

ID=23409169

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002013245A Expired - Fee Related CA2013245C (fr) 1989-05-26 1990-03-28 Masque de lithographie aux rayons x et dispositifs incorporant ce masque

Country Status (5)

Country Link
US (1) US5051326A (fr)
EP (1) EP0399735B1 (fr)
JP (1) JPH0319313A (fr)
CA (1) CA2013245C (fr)
DE (1) DE69021773T2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same
JP2593466Y2 (ja) * 1992-03-25 1999-04-12 ワイケイケイ株式会社 レール状ファスナー
JPH06105681B2 (ja) * 1992-04-07 1994-12-21 東京工業大学長 Ｘ線露光マスクの作製法
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
US5362575A (en) * 1992-12-31 1994-11-08 At&T Bell Laboratories Lithographic mask, comprising a membrane having improved strength
US5482802A (en) * 1993-11-24 1996-01-09 At&T Corp. Material removal with focused particle beams
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US6162564A (en) * 1997-11-25 2000-12-19 Kabushiki Kaisha Toshiba Mask blank and method of producing mask
KR100647968B1 (ko) 1999-07-22 2006-11-17 코닝 인코포레이티드 극 자외선 소프트 ｘ-선 투사 리소그라피 방법 및 마스크디바이스
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6660547B2 (en) * 2001-07-26 2003-12-09 Osram Opto Semiconductors Gmbh Stabilization for thin substrates
WO2004015764A2 (fr) 2002-08-08 2004-02-19 Leedy Glenn J Integration de systeme verticale
WO2016001351A1 (fr) 2014-07-04 2016-01-07 Asml Netherlands B.V. Membranes à utiliser dans un appareil lithographique et appareil lithographique comprenant une telle membrane

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721584A (en) * 1970-04-13 1973-03-20 A Diem Silicon coated substrates and objects fabricated therefrom
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS58141528A (ja) * 1982-02-18 1983-08-22 Agency Of Ind Science & Technol Ｘ線露光用マスクおよびその製法
JPS595628A (ja) * 1982-07-02 1984-01-12 Seiko Epson Corp メンブラン・マスク
JPS5918635A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd Ｘ線リソグラフイ用マスク
JPS59213131A (ja) * 1983-05-19 1984-12-03 Toshiba Corp Ｘ線露光用マスクの製造方法
EP0244246A3 (fr) * 1986-05-02 1990-03-21 Hampshire Instruments, Inc Procédé pour la fabrication de masques pour rayons-X aux dimensions stables
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process

Also Published As

Publication number Publication date
DE69021773T2 (de) 1996-05-02
DE69021773D1 (de) 1995-09-28
CA2013245C (fr) 1994-04-19
EP0399735B1 (fr) 1995-08-23
JPH0319313A (ja) 1991-01-28
EP0399735A3 (fr) 1991-07-03
EP0399735A2 (fr) 1990-11-28
US5051326A (en) 1991-09-24

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed