CN1004845B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1004845B
CN1004845B CN85108134.7A CN85108134A CN1004845B CN 1004845 B CN1004845 B CN 1004845B CN 85108134 A CN85108134 A CN 85108134A CN 1004845 B CN1004845 B CN 1004845B
Authority
CN
China
Prior art keywords
type
epitaxial layer
semiconductor device
region
pnp transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN85108134.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN85108134A (zh
Inventor
植木善夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN85108134A publication Critical patent/CN85108134A/zh
Publication of CN1004845B publication Critical patent/CN1004845B/zh
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

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  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CN85108134.7A 1984-11-05 1985-11-02 半导体器件 Expired CN1004845B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59232870A JPH0638476B2 (ja) 1984-11-05 1984-11-05 半導体装置
JP232870/84 1984-11-05

Publications (2)

Publication Number Publication Date
CN85108134A CN85108134A (zh) 1986-07-02
CN1004845B true CN1004845B (zh) 1989-07-19

Family

ID=16946115

Family Applications (1)

Application Number Title Priority Date Filing Date
CN85108134.7A Expired CN1004845B (zh) 1984-11-05 1985-11-02 半导体器件

Country Status (10)

Country Link
JP (1) JPH0638476B2 (de)
KR (1) KR940005447B1 (de)
CN (1) CN1004845B (de)
AT (1) AT395272B (de)
AU (1) AU572005B2 (de)
CA (1) CA1254671A (de)
DE (1) DE3539208C2 (de)
FR (1) FR2572850B1 (de)
GB (1) GB2167231B (de)
NL (1) NL194711C (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768183B2 (en) * 2001-04-20 2004-07-27 Denso Corporation Semiconductor device having bipolar transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1520515A (fr) * 1967-02-07 1968-04-12 Radiotechnique Coprim Rtc Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
EP0093304B1 (de) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Integrierte Halbleiterschaltung und Verfahren zur Herstellung derselben
JPS58212159A (ja) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
FR2572850B1 (fr) 1988-09-09
AU572005B2 (en) 1988-04-28
KR940005447B1 (ko) 1994-06-18
CN85108134A (zh) 1986-07-02
JPS61111575A (ja) 1986-05-29
JPH0638476B2 (ja) 1994-05-18
DE3539208C2 (de) 1998-04-09
AU4931585A (en) 1986-05-15
GB2167231A (en) 1986-05-21
ATA318985A (de) 1992-03-15
NL194711C (nl) 2002-12-03
FR2572850A1 (fr) 1986-05-09
GB2167231B (en) 1988-03-02
GB8526749D0 (en) 1985-12-04
DE3539208A1 (de) 1986-05-15
NL8503033A (nl) 1986-06-02
AT395272B (de) 1992-11-10
KR860004472A (ko) 1986-06-23
CA1254671A (en) 1989-05-23
NL194711B (nl) 2002-08-01

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GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term