JPH0638476B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0638476B2
JPH0638476B2 JP59232870A JP23287084A JPH0638476B2 JP H0638476 B2 JPH0638476 B2 JP H0638476B2 JP 59232870 A JP59232870 A JP 59232870A JP 23287084 A JP23287084 A JP 23287084A JP H0638476 B2 JPH0638476 B2 JP H0638476B2
Authority
JP
Japan
Prior art keywords
type
epitaxial layer
pnp transistor
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59232870A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61111575A (ja
Inventor
善夫 植木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP59232870A priority Critical patent/JPH0638476B2/ja
Priority to KR1019850007581A priority patent/KR940005447B1/ko
Priority to CA000493970A priority patent/CA1254671A/en
Priority to GB08526749A priority patent/GB2167231B/en
Priority to CN85108134.7A priority patent/CN1004845B/zh
Priority to AU49315/85A priority patent/AU572005B2/en
Priority to DE3539208A priority patent/DE3539208C2/de
Priority to FR8516362A priority patent/FR2572850B1/fr
Priority to AT0318985A priority patent/AT395272B/de
Priority to NL8503033A priority patent/NL194711C/nl
Publication of JPS61111575A publication Critical patent/JPS61111575A/ja
Publication of JPH0638476B2 publication Critical patent/JPH0638476B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59232870A 1984-11-05 1984-11-05 半導体装置 Expired - Lifetime JPH0638476B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP59232870A JPH0638476B2 (ja) 1984-11-05 1984-11-05 半導体装置
KR1019850007581A KR940005447B1 (ko) 1984-11-05 1985-10-15 반도체장치
CA000493970A CA1254671A (en) 1984-11-05 1985-10-28 Semiconductor device with npn and pnp transistors
GB08526749A GB2167231B (en) 1984-11-05 1985-10-30 Semiconductor devices
CN85108134.7A CN1004845B (zh) 1984-11-05 1985-11-02 半导体器件
AU49315/85A AU572005B2 (en) 1984-11-05 1985-11-04 Semiconductor device with npn and pnp transistors
DE3539208A DE3539208C2 (de) 1984-11-05 1985-11-05 Halbleitereinrichtung mit einem lateralen und einem vertikalen pnp-Transistor
FR8516362A FR2572850B1 (fr) 1984-11-05 1985-11-05 Dispositif d'un composant semi-conducteur notamment circuit integre bipolaire, comportant des transistors du type npn et pnp, lateral et vertical
AT0318985A AT395272B (de) 1984-11-05 1985-11-05 Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat
NL8503033A NL194711C (nl) 1984-11-05 1985-11-05 Halfgeleiderinrichting met een laterale pnp-transistor en een verticale pnp-transistor.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59232870A JPH0638476B2 (ja) 1984-11-05 1984-11-05 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5279026A Division JP2777054B2 (ja) 1993-10-01 1993-10-12 半導体装置

Publications (2)

Publication Number Publication Date
JPS61111575A JPS61111575A (ja) 1986-05-29
JPH0638476B2 true JPH0638476B2 (ja) 1994-05-18

Family

ID=16946115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59232870A Expired - Lifetime JPH0638476B2 (ja) 1984-11-05 1984-11-05 半導体装置

Country Status (10)

Country Link
JP (1) JPH0638476B2 (de)
KR (1) KR940005447B1 (de)
CN (1) CN1004845B (de)
AT (1) AT395272B (de)
AU (1) AU572005B2 (de)
CA (1) CA1254671A (de)
DE (1) DE3539208C2 (de)
FR (1) FR2572850B1 (de)
GB (1) GB2167231B (de)
NL (1) NL194711C (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768183B2 (en) * 2001-04-20 2004-07-27 Denso Corporation Semiconductor device having bipolar transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1520515A (fr) * 1967-02-07 1968-04-12 Radiotechnique Coprim Rtc Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
EP0093304B1 (de) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Integrierte Halbleiterschaltung und Verfahren zur Herstellung derselben
JPS58212159A (ja) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
FR2572850B1 (fr) 1988-09-09
AU572005B2 (en) 1988-04-28
KR940005447B1 (ko) 1994-06-18
CN85108134A (zh) 1986-07-02
JPS61111575A (ja) 1986-05-29
DE3539208C2 (de) 1998-04-09
AU4931585A (en) 1986-05-15
GB2167231A (en) 1986-05-21
ATA318985A (de) 1992-03-15
NL194711C (nl) 2002-12-03
FR2572850A1 (fr) 1986-05-09
GB2167231B (en) 1988-03-02
GB8526749D0 (en) 1985-12-04
CN1004845B (zh) 1989-07-19
DE3539208A1 (de) 1986-05-15
NL8503033A (nl) 1986-06-02
AT395272B (de) 1992-11-10
KR860004472A (ko) 1986-06-23
CA1254671A (en) 1989-05-23
NL194711B (nl) 2002-08-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term