CN1208672A - 分离试样的方法和设备,以及基片制造方法 - Google Patents

分离试样的方法和设备,以及基片制造方法 Download PDF

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Publication number
CN1208672A
CN1208672A CN98114865A CN98114865A CN1208672A CN 1208672 A CN1208672 A CN 1208672A CN 98114865 A CN98114865 A CN 98114865A CN 98114865 A CN98114865 A CN 98114865A CN 1208672 A CN1208672 A CN 1208672A
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CN
China
Prior art keywords
sample
jet
substrate
assembly
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN98114865A
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English (en)
Chinese (zh)
Inventor
近江和明
米原隆夫
坂口清文
柳田一隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1208672A publication Critical patent/CN1208672A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
    • Y10T156/1939—Air blasting delaminating means]

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Centrifugal Separators (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Combined Means For Separation Of Solids (AREA)
  • Weting (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
CN98114865A 1997-06-16 1998-06-16 分离试样的方法和设备,以及基片制造方法 Pending CN1208672A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP159038/97 1997-06-16
JP9159038A JPH115064A (ja) 1997-06-16 1997-06-16 試料の分離装置及びその方法並びに基板の製造方法

Publications (1)

Publication Number Publication Date
CN1208672A true CN1208672A (zh) 1999-02-24

Family

ID=15684894

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98114865A Pending CN1208672A (zh) 1997-06-16 1998-06-16 分离试样的方法和设备,以及基片制造方法

Country Status (9)

Country Link
US (1) US6427747B1 (2)
EP (1) EP0886300A3 (2)
JP (1) JPH115064A (2)
KR (1) KR100372810B1 (2)
CN (1) CN1208672A (2)
AU (1) AU724851B2 (2)
CA (1) CA2240701C (2)
SG (1) SG67512A1 (2)
TW (1) TW398039B (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183468A (zh) * 2013-05-24 2014-12-03 乐金显示有限公司 载体衬底分离系统及方法

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US6382292B1 (en) * 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6418999B1 (en) * 1997-12-26 2002-07-16 Cannon Kabushiki Kaisha Sample separating apparatus and method, and substrate manufacturing method
US6383890B2 (en) 1997-12-26 2002-05-07 Canon Kabushiki Kaisha Wafer bonding method, apparatus and vacuum chuck
JPH11243050A (ja) 1998-02-24 1999-09-07 Canon Inc 露光装置
US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP2000150611A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
JP4343295B2 (ja) * 1998-11-06 2009-10-14 キヤノン株式会社 試料の処理システム
US6672358B2 (en) 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
TW484184B (en) 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
JP4365920B2 (ja) * 1999-02-02 2009-11-18 キヤノン株式会社 分離方法及び半導体基板の製造方法
JP2000223683A (ja) * 1999-02-02 2000-08-11 Canon Inc 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにｓｏｉ基板の製造方法
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6221740B1 (en) * 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
JP4708577B2 (ja) 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP2002229473A (ja) 2001-01-31 2002-08-14 Canon Inc 表示装置の製造方法
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
DE10108369A1 (de) * 2001-02-21 2002-08-29 B L E Lab Equipment Gmbh Verfahren und Vorrichtung zum Ablösen eines Halbleiterwafers von einem Träger
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
JP2002353423A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2003017668A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
JP2005311199A (ja) * 2004-04-23 2005-11-04 Canon Inc 基板の製造方法
JP2008135690A (ja) * 2006-10-30 2008-06-12 Denso Corp 半導体力学量センサおよびその製造方法
CN104025277A (zh) 2011-10-31 2014-09-03 Memc电子材料有限公司 用于劈裂键合晶片结构的夹持装置和劈裂方法
KR101898121B1 (ko) * 2015-10-22 2018-09-12 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 워크피스 처리 방법 및 그러한 방법을 위해 설계된 장치
US11538698B2 (en) * 2019-09-27 2022-12-27 Globalwafers Co., Ltd. Cleave systems having spring members for cleaving a semiconductor structure and methods for cleaving such structures
JP7309191B2 (ja) * 2019-11-06 2023-07-18 中村留精密工業株式会社 ウェハー分割装置
CN121890306A (zh) 2023-09-29 2026-04-17 芝浦机械电子株式会社 基板分离装置
CN121157118A (zh) * 2025-11-12 2025-12-19 江苏无锡经纬天地半导体科技有限公司 一种机械手的检测方法、使用方法、检测装置和半导体设备

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US3583634A (en) * 1968-12-02 1971-06-08 Fmc Corp Spray nozzle
US3664586A (en) * 1970-07-06 1972-05-23 Charles R Harris Sr Sprinkler head
US4326553A (en) * 1980-08-28 1982-04-27 Rca Corporation Megasonic jet cleaner apparatus
DE4100526A1 (de) * 1991-01-10 1992-07-16 Wacker Chemitronic Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben
US5255853A (en) * 1991-04-02 1993-10-26 Ingersoll-Rand Company Adjustable fluid jet cleaner
US5232155A (en) * 1991-05-17 1993-08-03 Ingersoll-Rand Company Integrity sensor for fluid jet nozzle
FR2699852B1 (fr) 1992-12-29 1995-03-17 Gaz De France Procédé et dispositif d'usinage à jet de fluide haute pression asservi.
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JPH098095A (ja) * 1995-06-22 1997-01-10 Fuji Electric Co Ltd 積層半導体ウエハの分離装置およびその分離方法
KR0165467B1 (ko) 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
JPH1022238A (ja) * 1996-06-29 1998-01-23 Komatsu Electron Metals Co Ltd 半導体ウェハのエアーブロー装置
US6382292B1 (en) 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183468A (zh) * 2013-05-24 2014-12-03 乐金显示有限公司 载体衬底分离系统及方法

Also Published As

Publication number Publication date
JPH115064A (ja) 1999-01-12
KR100372810B1 (ko) 2003-04-21
AU724851B2 (en) 2000-10-05
US6427747B1 (en) 2002-08-06
CA2240701C (en) 2003-02-04
CA2240701A1 (en) 1998-12-16
TW398039B (en) 2000-07-11
KR19990007019A (ko) 1999-01-25
SG67512A1 (en) 1999-09-21
AU7186998A (en) 1998-12-17
EP0886300A3 (en) 2000-01-26
EP0886300A2 (en) 1998-12-23

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PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication