CN85109088A - 薄膜晶体管的制作方法 - Google Patents

薄膜晶体管的制作方法 Download PDF

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Publication number
CN85109088A
CN85109088A CN198585109088A CN85109088A CN85109088A CN 85109088 A CN85109088 A CN 85109088A CN 198585109088 A CN198585109088 A CN 198585109088A CN 85109088 A CN85109088 A CN 85109088A CN 85109088 A CN85109088 A CN 85109088A
Authority
CN
China
Prior art keywords
film
thin film
amorphous semiconductor
semiconductor thin
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN198585109088A
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English (en)
Chinese (zh)
Inventor
林久雄
野口隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN85109088A publication Critical patent/CN85109088A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN198585109088A 1984-11-15 1985-11-15 薄膜晶体管的制作方法 Pending CN85109088A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP241239/84 1984-11-15
JP59241239A JPH0824184B2 (ja) 1984-11-15 1984-11-15 薄膜トランジスタの製造方法

Publications (1)

Publication Number Publication Date
CN85109088A true CN85109088A (zh) 1986-08-27

Family

ID=17071271

Family Applications (1)

Application Number Title Priority Date Filing Date
CN198585109088A Pending CN85109088A (zh) 1984-11-15 1985-11-15 薄膜晶体管的制作方法

Country Status (7)

Country Link
JP (1) JPH0824184B2 (nl)
KR (1) KR930010978B1 (nl)
CN (1) CN85109088A (nl)
DE (1) DE3540452C2 (nl)
FR (1) FR2573248B1 (nl)
GB (1) GB2167899B (nl)
NL (1) NL194524C (nl)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293641C (zh) * 1992-12-09 2007-01-03 株式会社半导体能源研究所 电子电路
CN100461348C (zh) * 2004-07-21 2009-02-11 三星电子株式会社 硅基材料层、方法、结构、器件、发射器和显示器
CN100559246C (zh) * 1992-05-29 2009-11-11 株式会社半导体能源研究所 有源矩阵液晶显示装置
CN104409635A (zh) * 2014-12-16 2015-03-11 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制作方法、阵列基板、显示装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
US5242858A (en) * 1990-09-07 1993-09-07 Canon Kabushiki Kaisha Process for preparing semiconductor device by use of a flattening agent and diffusion
US5403756A (en) * 1991-11-20 1995-04-04 Sharp Kabushiki Kaisha Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
KR950003235B1 (ko) * 1991-12-30 1995-04-06 주식회사 금성사 반도체 소자의 구조
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
JPS558026A (en) * 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
JPS59165451A (ja) * 1983-03-11 1984-09-18 Toshiba Corp 半導体装置の製造方法
JPS61191070A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 半導体装置の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100559246C (zh) * 1992-05-29 2009-11-11 株式会社半导体能源研究所 有源矩阵液晶显示装置
CN1293641C (zh) * 1992-12-09 2007-01-03 株式会社半导体能源研究所 电子电路
CN100461348C (zh) * 2004-07-21 2009-02-11 三星电子株式会社 硅基材料层、方法、结构、器件、发射器和显示器
CN104409635A (zh) * 2014-12-16 2015-03-11 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制作方法、阵列基板、显示装置
CN104409635B (zh) * 2014-12-16 2017-02-22 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制作方法、阵列基板、显示装置
US9728723B2 (en) 2014-12-16 2017-08-08 Boe Technology Group Co., Ltd. Organic thin film transistor and manufacturing method thereof, array substrate
US10050200B2 (en) 2014-12-16 2018-08-14 Boe Technology Group Co., Ltd. Organic thin film transistor and manufacturing method thereof, array substrate

Also Published As

Publication number Publication date
KR930010978B1 (ko) 1993-11-18
NL8503123A (nl) 1986-06-02
GB2167899B (en) 1988-04-27
DE3540452A1 (de) 1986-06-05
DE3540452C2 (de) 1999-07-29
NL194524B (nl) 2002-02-01
GB2167899A (en) 1986-06-04
JPS61119079A (ja) 1986-06-06
GB8527737D0 (en) 1985-12-18
KR860004455A (ko) 1986-06-23
JPH0824184B2 (ja) 1996-03-06
NL194524C (nl) 2002-06-04
FR2573248A1 (fr) 1986-05-16
FR2573248B1 (fr) 1991-06-21

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