DK1114885T3 - CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af samme - Google Patents

CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af samme

Info

Publication number
DK1114885T3
DK1114885T3 DK00922915T DK00922915T DK1114885T3 DK 1114885 T3 DK1114885 T3 DK 1114885T3 DK 00922915 T DK00922915 T DK 00922915T DK 00922915 T DK00922915 T DK 00922915T DK 1114885 T3 DK1114885 T3 DK 1114885T3
Authority
DK
Denmark
Prior art keywords
wafer
making
well
same
single crystal
Prior art date
Application number
DK00922915T
Other languages
English (en)
Inventor
Takao Isobe Abe
Teruhiko Hirasawa
Katsushi Tokunaga
Tetsuya Igarashi
Masafumi Yamaguchi
Original Assignee
Shinetsu Chemical Co
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co, Shinetsu Handotai Kk filed Critical Shinetsu Chemical Co
Application granted granted Critical
Publication of DK1114885T3 publication Critical patent/DK1114885T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK00922915T 1999-05-28 2000-04-28 CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af samme DK1114885T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15069799 1999-05-28
JP26454999 1999-09-17

Publications (1)

Publication Number Publication Date
DK1114885T3 true DK1114885T3 (da) 2006-07-10

Family

ID=26480209

Family Applications (1)

Application Number Title Priority Date Filing Date
DK00922915T DK1114885T3 (da) 1999-05-28 2000-04-28 CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af samme

Country Status (9)

Country Link
US (1) US6815605B1 (da)
EP (1) EP1114885B1 (da)
JP (1) JP3679366B2 (da)
KR (1) KR100676459B1 (da)
AU (1) AU779183B2 (da)
DE (1) DE60026286T2 (da)
DK (1) DK1114885T3 (da)
TW (1) TWI223012B (da)
WO (1) WO2000073542A1 (da)

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US20090114274A1 (en) * 2007-11-02 2009-05-07 Fritzemeier Leslie G Crystalline thin-film photovoltaic structures
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
US8415187B2 (en) 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
CN101805925B (zh) * 2010-02-20 2012-08-15 西安隆基硅材料股份有限公司 太阳能电池用掺镓铟单晶硅材料及其制备方法
CN102234840A (zh) * 2010-05-07 2011-11-09 姚罡 薄形硅晶片的制备方法
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
US9105786B2 (en) * 2011-04-18 2015-08-11 Cisco Technology, Inc. Thermal treatment of silicon wafers useful for photovoltaic applications
JP2013103874A (ja) * 2011-11-11 2013-05-30 Yutaka Kamaike シリコンおよび製造方法
FR2990563B1 (fr) * 2012-05-11 2014-05-09 Apollon Solar Cellule solaire a base de silicium dope de type n
KR20150095761A (ko) * 2012-12-11 2015-08-21 헴로크세미컨덕터코포레이션 도핑된 규소의 형성 및 분석 방법
CN103060892B (zh) * 2012-12-26 2015-09-16 江西赛维Ldk太阳能高科技有限公司 一种类单晶硅铸锭用籽晶拼接方法
US20150333193A1 (en) 2012-12-31 2015-11-19 Memc Electronic Matrials S.P.A. Indium-doped silicon wafer and solar cell using the same
CN103966665B (zh) * 2014-05-15 2016-06-29 阿特斯光伏电力(洛阳)有限公司 一种掺镓多晶硅锭及其制备方法
JP5830147B1 (ja) 2014-09-04 2015-12-09 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
JP2016092238A (ja) 2014-11-05 2016-05-23 信越化学工業株式会社 太陽電池及びその製造方法
JP6502651B2 (ja) 2014-11-13 2019-04-17 信越化学工業株式会社 太陽電池の製造方法及び太陽電池モジュールの製造方法
JP5938113B1 (ja) * 2015-01-05 2016-06-22 信越化学工業株式会社 太陽電池用基板の製造方法
JP5892527B1 (ja) 2015-01-06 2016-03-23 信越化学工業株式会社 太陽電池用ｆｚシリコン単結晶の製造方法及び太陽電池の製造方法
CN104775150A (zh) * 2015-04-01 2015-07-15 宁晋赛美港龙电子材料有限公司 一种直拉法单晶硅生长中的掺嫁工艺
CN108364999A (zh) * 2018-01-29 2018-08-03 泰州隆基乐叶光伏科技有限公司 一种单晶掺镓硅片及其制备方法和太阳电池
MX2022001458A (es) 2019-08-09 2022-06-08 Leading Edge Equipment Tech Inc Produccion de una cinta u oblea con regiones de baja concentracion de oxigeno.
WO2021030235A2 (en) 2019-08-09 2021-02-18 Leading Edge Equipment Technologies, Inc. Wafer with regions of low oxygen concentration
US11824070B2 (en) 2019-11-26 2023-11-21 Shin-Etsu Handotai Co., Ltd. Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor
JP7318518B2 (ja) 2019-11-26 2023-08-01 信越半導体株式会社 固体撮像素子用のシリコン単結晶基板及びシリコンエピタキシャルウェーハ、並びに固体撮像素子
CN111477560B (zh) * 2020-05-14 2023-03-03 包头美科硅能源有限公司 太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法
KR102677112B1 (ko) * 2022-05-09 2024-06-20 (주)셀릭 저저항 대구경 잉곳 제조장치
JP7306536B1 (ja) 2022-06-14 2023-07-11 信越半導体株式会社 エピタキシャルウェーハの製造方法

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Also Published As

Publication number Publication date
KR20010079565A (ko) 2001-08-22
KR100676459B1 (ko) 2007-01-31
EP1114885A1 (en) 2001-07-11
WO2000073542A1 (fr) 2000-12-07
DE60026286D1 (de) 2006-04-27
US6815605B1 (en) 2004-11-09
AU779183B2 (en) 2005-01-13
EP1114885A4 (en) 2004-09-15
TWI223012B (en) 2004-11-01
EP1114885B1 (en) 2006-03-01
AU4315900A (en) 2000-12-18
DE60026286T2 (de) 2006-11-09
JP3679366B2 (ja) 2005-08-03

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