EP0450077A1 - Element electroluminescent a film mince et procede de fabrication de cet element - Google Patents

Element electroluminescent a film mince et procede de fabrication de cet element Download PDF

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Publication number
EP0450077A1
EP0450077A1 EP90900991A EP90900991A EP0450077A1 EP 0450077 A1 EP0450077 A1 EP 0450077A1 EP 90900991 A EP90900991 A EP 90900991A EP 90900991 A EP90900991 A EP 90900991A EP 0450077 A1 EP0450077 A1 EP 0450077A1
Authority
EP
European Patent Office
Prior art keywords
film
metal oxide
oxide film
electrically insulating
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP90900991A
Other languages
German (de)
English (en)
Other versions
EP0450077A4 (en
Inventor
Naoya Techn.Inst. Of K.K. Komatsu Se Tsurumaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Publication of EP0450077A1 publication Critical patent/EP0450077A1/fr
Publication of EP0450077A4 publication Critical patent/EP0450077A4/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes

Definitions

  • the present invention relates to both a thin film EL element to be used in the display of an instruments panel to be mounted in a vehicle or other various apparatus and a fabrication process of the same.
  • FIG. 1 A thin film EL element of the prior art in the case of a matrix drive is shown in section in Fig. 1.
  • This thin film EL element is formed over a transparent substrate 1 with transparent electrodes 2 and above the substrate 1 with first electrically insulating film 3, an EL layer 4, a second electrically insulating film 5 and a metal back electrode 6 in the recited order.
  • the thin film EL element thus constructed emits a light when a voltage no less than a luminescence threshold voltage is applied between the metal back electrode 6 and the transparent electrodes 2. At this time, the electric field established is concentrated at the edge portions 7 of the transparent electrodes 2 to cause a dielectric breakdown. Thus, there arises a trouble that the display becomes impossible at those portions.
  • the present invention has been conceived in view of the circumstances thus far described and has an object to provide a thin film EL element cleared of the portions such as the edge portions of the transparent electrodes, in which the electric field might otherwise be concentrated, and accordingly the display-impossible portions due to the dielectric breakdown.
  • Another object of the present invention is to provide a process for fabricating a thin film EL element, which is enabled to form a flattened transparent electrode layer having both an electrically insulating metal oxide film formed with transparent electrodes and an electric insulator.
  • a thin film EL element having a double insulation structure for a matrix drive, which element is characterized in that transparent electrodes over an electrically insulating transparent substrate is formed in a transparent, flat electrically insulating film.
  • a process for fabricating a thin film EL element having a double insulating structure for a matrix drive comprising: the step of an electrically insulating metal oxide film over an electrically insulating transparent substrate; the step of forming metal layers selectively over the surface of said metal oxide film; and the step of forming transparent electrodes by diffusing said metal layers into said insulating metal oxide film.
  • the transparent electrodes are formed in the transparent, flat insulating film, according to the aforementioned thin film EL element of the first mode, the edge portions of the transparent electrodes of the prior art, in which the electric field is concentrated, are eliminated to eliminate the display-impossible portions due to the dielectric breakdown.
  • the transparent electrodes can be formed in the insulating metal oxide film, the remaining portions of which can be formed with the flat, transparent electrode layer acting as the insulator.
  • an electrically insulating transparent substrate 10 is formed thereover with an electrically insulating metal oxide film 11 of ZnO or the like by the sputtering method, the electron beam vapor deposition or the like.
  • metal layers 12 are formed only at portions for the electrodes by the vapor deposition of a metal such as A l using a mask.
  • the step of thus forming the metal layers 12 selectively may be exemplified by vapor-depositing the metal at first all over surface and then by patterning the deposited metal by the photolithography.
  • the metal may be vapor-deposited over a patterned photo resist, followed by the lift-off method of peeling the resist.
  • the aforementioned transparent substrate 10 is subjected to a heat treatment (e.g., annealed) in the vacuum to diffuse the metal of the aforementioned metal layers 12 into the electrically insulating metal oxide film 11 thereby form transparent electrodes 13.
  • a heat treatment e.g., annealed
  • a transparent electrode layer 14 composed of the electrically insulating metal oxide film 11 and the transparent electrodes 13 is formed thereabove with a first electrically insulating film 15, an electroluminescence layer 16, a second electrically insulating film 17 and a back metal electrode 18 in the recited order to fabricate the thin EL element.
  • the metal oxide i.e., ZnO is an electric insulator having a band gap of about 3.2 eV and a specific resistance of 108 to 1011 ⁇ cm but is turned, if doped (or added) with A l , into a transparent conductor having its specific resistance dropped to 10 ⁇ 4 ⁇ cm equal to that of ITO.
  • the transparent electrode layer 14 thus formed is flat and retain the conductivity only at the portions of the transparent electrodes 13 but is electrically insulating at the other portions.
  • a glass substrate of 50 x 50 mm2 was formed with a film of ZnO having a thickness of 2,000 ⁇ (at the temperature of 500 °C at the glass substrate at this time) by the rf magnetron sputtering method.
  • the ZnO film was then vapor-evaporated thereover with A l to have a thickness of about 100 ⁇ by the electron beam deposition using a metal mask formed of sixteen rows of slits having a width of 1 mm and a length of 50 mm at a pitch of 1.8 mm.
  • the intermediate was subjected to the heat treatment in the vacuum at 500 °C for thirty minutes.
  • the intermediate was formed thereover with the first electrically insulating film of Ta2O5 having a thickness of 5,000 ⁇ by the rf magnetron sputtering method and then with the electroluminescence layer of Zns:Mn (wherein Ms is 0.5 at %) having a thickness of 6,000 ⁇ .
  • the second electrically insulating film was similar to the first electrically insulating film.
  • the back metal electrode was formed with A l to have a thickness of 3,000 ⁇ by the electron beam deposition using a metal mask formed of sixteen rows of slits having a width of 1 mm and a length of 50 mm at a pitch of 1.8 mm and positioned at a right angle with respect to the metal mask of the aforementioned case of the A l deposition.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Elément électroluminescent à film mince empêchant la formation par claquage électrique de parties défectueuses où il est impossible de produire un affichage, et procédé de fabrication de cet élément. L'élément EL à film mince présente une structure à double isolation et comporte un circuit d'attaque matriciel. On forme des électrodes transparentes (13) dans un film isolant plat et transparent (11) sur un substrat isolant et translucide (10). Le procédé de fabrication comprend une étape de formation du film en oxyde métallique isolant (11) sur le substrat translucide (10), une étape de formation sélective de couches métalliques (12) sur la surface du film en oxyde métallique, et une étape de formation des électrodes transparentes (13) par diffusion de ces couches métalliques dans le film en oxyde métallique.
EP19900900991 1988-12-16 1989-12-15 Thin-film electroluminescent element and method of manufacturing the same Withdrawn EP0450077A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP316300/88 1988-12-16
JP63316300A JP2764591B2 (ja) 1988-12-16 1988-12-16 薄膜ｅｌ素子とその製造方法

Publications (2)

Publication Number Publication Date
EP0450077A1 true EP0450077A1 (fr) 1991-10-09
EP0450077A4 EP0450077A4 (en) 1992-01-15

Family

ID=18075587

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19900900991 Withdrawn EP0450077A4 (en) 1988-12-16 1989-12-15 Thin-film electroluminescent element and method of manufacturing the same

Country Status (4)

Country Link
EP (1) EP0450077A4 (fr)
JP (1) JP2764591B2 (fr)
KR (1) KR910700596A (fr)
WO (1) WO1990007254A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997038558A1 (fr) * 1996-04-03 1997-10-16 Ecole Polytechnique Federale De Lausanne Dispositif électroluminescent

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4584836B2 (ja) * 2003-07-07 2010-11-24 パイオニア株式会社 有機エレクトロルミネッセンス表示パネル及びその製造方法
KR100857472B1 (ko) * 2007-05-29 2008-09-08 한국전자통신연구원 유기 전계 발광 표시 소자 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL38468A (en) * 1971-02-02 1974-11-29 Hughes Aircraft Co Electrical resistance device and its production
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
JPS58102975A (ja) * 1981-12-16 1983-06-18 富士通株式会社 表示パネル用電極基板の製造方法
JPS61131396A (ja) * 1984-11-29 1986-06-19 ホ−ヤ株式会社 電極用基板の製造方法
JPS61151996A (ja) * 1984-12-26 1986-07-10 株式会社日立製作所 薄膜エレクトロルミネセンス素子およびその製造方法
JPS61146894U (fr) * 1985-03-04 1986-09-10
JPS6353892A (ja) * 1986-08-22 1988-03-08 クラリオン株式会社 電場発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997038558A1 (fr) * 1996-04-03 1997-10-16 Ecole Polytechnique Federale De Lausanne Dispositif électroluminescent

Also Published As

Publication number Publication date
JP2764591B2 (ja) 1998-06-11
WO1990007254A1 (fr) 1990-06-28
KR910700596A (ko) 1991-03-15
EP0450077A4 (en) 1992-01-15
JPH02162684A (ja) 1990-06-22

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