EP0687014B1 - Dispositif semi-conducteur dont le contact est établi par pression du type déclenché par la lumière - Google Patents

Dispositif semi-conducteur dont le contact est établi par pression du type déclenché par la lumière Download PDF

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Publication number
EP0687014B1
EP0687014B1 EP95104855A EP95104855A EP0687014B1 EP 0687014 B1 EP0687014 B1 EP 0687014B1 EP 95104855 A EP95104855 A EP 95104855A EP 95104855 A EP95104855 A EP 95104855A EP 0687014 B1 EP0687014 B1 EP 0687014B1
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EP
European Patent Office
Prior art keywords
semiconductor substrate
pressure contact
semiconductor device
contact type
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP95104855A
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German (de)
English (en)
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EP0687014A3 (fr
EP0687014A2 (fr
Inventor
Yuzuru C/O Mitsubishi Denki Konishi
Kyotaro C/O Mitsubishi Denki Hirasawa
Kazunori C/O Fukuryo Semi Eng. Taguchi
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of EP0687014A2 publication Critical patent/EP0687014A2/fr
Publication of EP0687014A3 publication Critical patent/EP0687014A3/fr
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Publication of EP0687014B1 publication Critical patent/EP0687014B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall

Definitions

  • the document EP 0 567 996 discloses another semiconductor device comprising a semiconductor element being held by external anode and cathode electrodes.
  • the semiconductor element is brought into contact with the external anode and cathode electrodes through respective anode and cathode electrode plates under pressure.
  • the cathode electrode plate has a through hole in its center while the external cathode electrode being provided with a hole in correspondence thereto, whereby an engaging hole is defined by the through hole and the hole.
  • a gate electrode holder is slidably engaged in the engaging hole.
  • the document EP EP-A-669652 which is with respect to the present invention a post-published prior art, discloses a pressure contact type semiconductor device comprising a semiconductor substrate being held between first and second distortion buffer plates which in turn being sandwiched by an anode flange and a cathode flange.
  • the distortion buffer plates comprise respective through holes at the center.
  • First and second bottomed holes are formed in the anode flange and the cathode flange.
  • the housing is made airtight inside and inert gas is sealed therein.
  • the end surface of the metal plate 8 silver-soldered to the main electrode 5 and the insulation tube 6 are welded at last, and the gas remaining inside is exhausted through the metal tube 11 and replaced by the inert gas, and then the end of the metal tube 11 is arc-welded to realize the airtightness of the housing and sealing of the inert gas.
  • a pressure contact type semiconductor device comprises a semiconductor substrate, a thermal compensating plate in alloy-free contact with the semiconductor substrate, a main electrode in contact with the thermal compensating plate, wherein the thermal compensating plate and the main electrode fit to different ends of a pin to be positioned relatively to each other, both the thermal compensating plate and the main electrode having holes and the pin extends into the holes; the pressure contact type semiconductor device further comprising an insulation tube surrounding the semiconductor substrate, wherein the semiconductor substrate is fixed to an inner wall of the insulation tube, and a light guide transmitting a light signal to the semiconductor substrate, wherein a part of the light guide is accommodated in a tubular body and attached to the insulation tube.
  • the main electrode and the thermal compensating plate in contact with each other fit to the common pin to be fixed, damage of the semiconductor substrate caused by displacement thereof in transportation and the like before use of the device can be prevented.
  • the thermal compensating plate and the main electrode fit to the pin only at approximate center positions of the respective contact surfaces.
  • the thermal compensating plate and the main electrode fit to the common pin only at a single position at the approximate center thereof, positional slipping off in the radial direction can be prevented with the simplest structure.
  • the semiconductor substrate As the semiconductor substrate is fixed to the insulation tube, there is no possibility that the semiconductor substrate moves to abut on the inner wall of the insulation tube or the like to be damaged.
  • the semiconductor substrate as the semiconductor substrate is fixed to the projection formed on the inner wall of the insulation tube, the semiconductor substrate can be easily fixed.
  • the semiconductor substrate as the semiconductor substrate is fixed to the projection by using the adhesive agent, the semiconductor substrate can be fixed more easily.
  • inside of the insulation tube accommodating the semiconductor substrate is airtight from outside and a through hole is formed in the projection.
  • the semiconductor substrate in a pressure contact type semiconductor device is fixed to an inner wall of the insulation tube through a protection resin.
  • the pressure contact type semiconductor device referring to the main electrode as a first main electrode comprises a second main electrode pressure-contacted to the semiconductor substrate from other side than the first one, and a control signal transmission path for transmitting a control signal to the semiconductor substrate, wherein the second main electrode defines a groove accommodating the control signal transmission path and the shape of the groove has its opening width increasing from a deeper portion toward an opening portion.
  • the groove accommodating the control signal transmission path has a shape which has its width of opening increasing from the deeper portion toward the opening portion, such as a tapered shape, accommodation of the control signal transmission path is easy and the volume of the groove can be small. Accordingly, the loss heat produced in the semiconductor substrate can be effectively radiated to outside.
  • the pressure contact type semiconductor device comprises a light guide transmitting a light signal to the semiconductor substrate, wherein a part of the light guide is accommodated in a tubular body and attached to the insulation tube.
  • the pressure contact type semiconductor device comprises a light guide transmitting a light signal to the semiconductor substrate, wherein a part of the light guide is attached to the insulation tube through an elastic tubular body.
  • the pressure contact type semiconductor device comprises a light guide transmitting a light signal to a light receiving surface of the semiconductor substrate and a guide ring fixed on the semiconductor substrate to surround the light receiving surface, wherein a light emitting end of the light guide is inserted into the guide ring.
  • the light emitting end of the light guide can be easily positioned to an adequate position with respect to the light receiving surface.
  • the pressure contact type semiconductor device refers to the guide ring as a first guide ring, and further comprises a second guide ring into which the light emitting end of the light guide is inserted, wherein the light emitting end of the light guide is inserted in the first guide ring with play and the second guide ring fits to the outer periphery of the first guide ring.
  • the light emitting end of the light guide is fixed inside the guide ring by an adhesive optical coupling agent put inside the guide ring.
  • the thermal stresses are absorbed by the optical coupling agent. Further, transmission of light signals from the light emitting end of the light guide to the light receiving surface of the semiconductor substrate can be made efficiently.
  • the pressure contact type semiconductor device referring to the compensating plate and the main electrode respectively as first compensating plate and first main electrode, comprises a second thermal compensating plate in contact with the semiconductor substrate from other side than the firs one and a second main electrode in contact with the second thermal compensating plate, and a ring which fits to outer peripheries of both of the second thermal compensating plate and the second main electrode.
  • Fig.1 is a front sectional view of a pressure contact type semiconductor device in the preferred embodiment.
  • Fig.3 is a fragmentary enlarged front sectional view of the device in the preferred embodiment.
  • Fig.5 is a front sectional view of the main electrode in the preferred embodiment.
  • Fig.6 is a bottom view of the main electrode in the preferred embodiment.
  • Fig.7 is an enlarged front sectional view of the vicinity of the light introducing window in the preferred embodiment.
  • Fig.8 is an enlarged front sectional view of the vicinity of the light receiving surface in the preferred embodiment.
  • Fig.9 is a front sectional view of a conventional pressure contact type semiconductor device.
  • Fig.10 is a front sectional view of another conventional pressure contact type semiconductor device.
  • Fig.1 is a front sectional view of a pressure contact type thyristor of the light trigger type in this preferred embodiment.
  • a light receiving portion la is provided at the center portion of the upper main surface of the semiconductor substrate 1.
  • a light emitting end of a light guide (control signal transmission path) 10 for transmitting light signals (control signals) inputted from outside faces to this light receiving portion 1a.
  • thermal compensating plate 2 and a thermal compensating plate 3 abut on the upper main surface and the lower main surface of the semiconductor substrate 1, respectively.
  • thermal compensating plates 2 and 3 are not alloyed to the semiconductor substrate 1 by soldering or the like, but they are pressure-contacted to the main surfaces of the semiconductor substrate 1 in the so-called alloy-free manner.
  • the thermal compensating plates 2 and 3 are held between the main electrodes 4 and 5, respectively. These main electrodes 4 and 5 are fixed to an insulation tube 6 formed of ceramics, for example, through circular ring like metal plates 7 and 8, respectively.
  • the insulation tube 6 has an outward projection, or a concave ⁇ co nvex portion for suppressing creeping discharge on its outer periphery.
  • the insulation tube 6 also has a projection 6a projecting inwardly along its inner periphery.
  • the thermal compensating plate 3 and the main electrode 5 are normally positioned by a screw pin (pin) 32. That is to say, a through hole is provided at the center of the thermal compensating plate 3 and a tapped hole is provided at the center of the corresponding main electrode 5, where the screw 32 which threadingly engages the tapped hole gets into the through hole of the thermal compensating plate 3 to restrict movement of the thermal compensating plate 3 in the radial direction.
  • the thermal compensating plate 3 does not move in the radial direction, it does not give damage to the semiconductor substrate 1. Furthermore, it does not damage nor move insulation resin (resin for protection) 23, described later, attached to the outer periphery of the semiconductor substrate 1, either.
  • the screw pin 32 threadingly engages the tapped hole of the main electrode 5 not to move in the axial direction of the through hole, so that it will not collide with the semiconductor substrate 1 to damage it. Also, the screw pin 32 prevents the movement in the radial direction in the thermal compensating plate 3 with the simplest structure of engaging only at the center portion of the thermal compensating plate 3 and the main electrode 5.
  • FIG.2 and Fig.3 are fragmentary enlarged sectional views of the vicinity of the center part of the thermal compensating plate 3 shown in Fig.1.
  • a hole having a bottom is provided in place of the through hole at the center of the thermal compensating plate 3, and a hole having a bottom similar to that of the thermal compensating plate 3 is provided in place of the tapped hole at the center of the corresponding main electrode 5.
  • a pin 33 having no screw is used in place of the screw pin 32, and this pin 33 gets into the both holes having bottoms to realize normal position of the thermal compensating plate 3 and the main electrode 5.
  • the movement of the thermal compensating plate 3 in the radial direction is also restricted, so it will not damage nor move the insulating resin 23 attached on the outer periphery of the semiconductor substrate 1. Furthermore, as the hole provided in the thermal compensating plate 3 is not a through hole but a hole having a bottom, the pin 33 will not hit the semiconductor substrate 1 to give damage to the semiconductor substrate 1.
  • the fixing ring 30 is formed of resin or metal such as aluminum or the like.
  • the main electrode 4 has a flange portion 4c projecting outwardly at the upper end of its outer peripheral surface.
  • a spring (elastic body)31 such as a spring coil, a corrugated ring spring, or a belleville spring is interposed between the lower surface of this flange portion 4c and the upper end of the fixing ring 30.
  • Restricting the movements of the semiconductor substrate 1 in the radial direction is also helpful in positioning the light emitting end of the light guide 10 and the light receiving portion la of the semiconductor substrate. That is to say, if the positions of the light emitting end of the light guide 10 and the light receiving portion la are registered and then they are bonded with the adhesive agent 24, errors in dimension among parts resulted from the dimensional tolerances of the light guide 10 or the like can be adjusted to realize precise positioning.
  • Fig.4 is a plan view showing the semiconductor substrate 1 fixed to the projection 6a.
  • the adhesive agent 24 is applied at intervals around the semiconductor substrate 1.
  • through holes 6b passing through from the upper surface to the lower surface of the projection 6a are provided at the positions where the adhesive agent 24 is not applied to.
  • this establishes communication between above and below the semiconductor substrate 1.
  • the gases such as the oxidizing gas, steam, and the like produced in the housing can be exhausted through the exhaust spigot 11b provided above the semiconductor substrate 1, and further the gas in the housing can be replaced by the inert gas.
  • notches (grooves) 4a and 4b for introducing the light guide 10 are formed in the main electrode 4.
  • the loss heat generated in the semiconductor substrate 1 is transmitted through the main electrodes 4 and 5 and radiated out of the device.
  • the volume of the cavity formed in the main electrode 4 by the notches 4a and 4b is as small as possible.
  • Fig.5 and Fig.6 which are respectively a sectional view and a bottom view of the main electrode 4
  • the shape of the notch 4b at the center of the main electrode 4 is not a cylindrical shape but a frustum of a cone, i.e., it is tapered.
  • the shape of the notch 4b may be a hemisphere in place of a frustum of a cone, or it may take other shapes which have its opening area increasing as it gets closer to the bottom. Though not shown in the figure, the shape of the notch 4a is also preferably set so that it becomes larger as it gets closer to the opening away from the bottom of the groove.
  • Fig.7 is an enlarged front sectional view of the vicinity of the horizontal light entering end in the light guide 10 which bends in the form of "L".
  • a through hole for transmitting the light signals is formed in the horizontal direction in the insulation tube 6.
  • a metal tube 40 is fixedly inserted in this through hole.
  • An optical transmissive light introducing window 42 through which light signals from outside are transmitted is airtightly bonded to this metal tube 40 through a circular ring like fixing jig 41.
  • a tubular body 43 threadingly engages the inner side of the metal tube 40 to be fixedly inserted therethrough.
  • the tubular body 43 is formed of resin or metal, for example, with its inside diameter somewhat larger than the diameter of the light guide 10 so that they are not in contact with each other.
  • the tubular body 43 projects more inwardly than the inner side of the insulation tube 6. Even if the main electrode 4 in Fig.1 turns in the assembling work before welding, the notch 4a will not directly abut on the light guide 10 because of the existence of the tubular body 43. That is, the tubular body 43 serves as a protection member for protecting the light guide 10.
  • the light guide 10 is flexibly supported by the metal tube 40 with this elastic tubular body 44 interposed therebetween. Accordingly, vibration, impact and the like applied from outside are absorbed by the elastic tubular body 44, and the light guide 10 is prevented from being damaged by the vibrations, impact, etc.
  • a reflection preventing film formed of silicon dioxide, for example, having a single layer or multiple layers is formed on the both surfaces of the light introducing window 42 by a method of vapor deposition or the like. This suppresses reflection of light signals which will cause transmission loss of light signals and improves the transmission efficiency.
  • a material which can satisfactorily stand high temperature when soldered is selected for the reflection preventing film, since the formation of the reflection preventing film is performed before the light introducing window 42 is fixed to the fixing jig 41 by soldering or the like.
  • a similar reflection preventing film is formed on both of the light entering end and the light emitting end of the light guide 10 or on one of them to improve the transmission efficiency of light signals.
  • Fig.8 is an enlarged front sectional view in the vicinity of the light emitting end of the light guide 10.
  • Two guide rings 50 and 51 are used to normally position the light emitting end of the light guide 10 to the light receiving portion la of the semiconductor substrate 1.
  • the guide rings 50 and 51 are formed of resin or the like.
  • the guide ring 50 has a through hole formed at its center, into which the light guide 10 is inserted. Furthermore, the guide ring 50 fits to the outer periphery of the guide ring 51.
  • the guide ring 51 is first provided at a position concentric with the light receiving portion la of the semiconductor substrate 1 and then it is fixed with adhesive agent 52. After that, optical coupling agent 20 is put inside the guide ring 51. Resin which has some fluidity before solidifying and maintains some flexibility after thermally treated or left at ordinary temperature and solidified, and which has optical transparency and refractive index of about 1.3 to 1.5 is selected for the optical coupling agent 20. Silicone rubber system is suitable for this, for example.
  • the light emitting end of the light guide 10 is inserted into the optical coupling agent 20 and the guide ring 50 with the light guide 10 previously inserted therein is fitted to the guide ring 51.
  • the guide ring 51 is fixed at the predetermined position, the light emitting end of the light guide 10 is naturally positioned above the light receiving portion 1a when the guide rings 50 and 51 fit to each other. Accordingly, light signals are surely transmitted to the light receiving portion 1a of the semiconductor substrate 1.
  • the optical coupling agent 20 has the flexibility, the expansion and shrinkage of the parts such as the light guide 10 due to the temperature cycle are absorbed by the optical coupling agent 20. Accordingly, damage or the like of the light guide 10 caused by the thermal stresses resulted from the temperature cycle is prevented.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Claims (21)

  1. Un dispositif semi-conducteur dont le contact est établi par pression, comprenant
    un substrat semi-conducteur (1), une plaque compensatrice thermique (3) en contact libre d'alliage avec le substrat semi-conducteur (1), une électrode principale (5) en contact avec la plaque compensatrice thermique (3), dans lequel ladite plaque compensatrice thermique (3) et ladite électrode principale (5) s'accordent avec des extrémités différentes d'une épingle (32) positionnées relativement l'une par rapport à l'autre, toutes les deux, ladite plaque compensatrice thermique (3) et ladite électrode principale (5) ayant des trous et ladite épingle (32) s'étendant dans lesdits trous;
    un tube isolant (6) entourant le substrat semi-conducteur (1), dans lequel ledit substrat semi-conducteur est fixé à une paroi intérieure dudit tube isolant (6); et
    un guidage de lumière (10) transmettant un signal de lumière audit substrat semi-conducteur (1), dans lequel une partie dudit guidage de lumière (10) est logée dans un corps tubulaire (43) et attachée audit tube isolant (6).
  2. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel ladite plaque compensatrice thermique (3) et ladite électrode principale (5) s'accordent avec ladite épingle (32) seulement à des positions approximativement au centre des surfaces de contact respectives.
  3. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel une projection (6a) en saillie vers l'intérieur est formée sur ladite paroi intérieure dudit tube isolant (6) et ledit substrat semi-conducteur (1) est fixé à la projection (6a).
  4. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 3, dans lequel ledit substrat semi-conducteur (1) est fixé à ladite projection (6a) en utilisant un agent adhésif (24).
  5. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 3, dans lequel ledit substrat semi-conducteur (1) est fixé à ladite projection (6a) par une résine de protection (23) prévue sur la périphérie du substrat.
  6. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 3, dans lequel ladite projection (6a) est formée sur la périphérie entière de ladite paroi intérieure.
  7. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 6, dans lequel l'intérieur dudit tube isolant (6) logeant ledit substrat semi-conducteur (1) est étanche à l'air de l'extérieur et un trou de passage (6b) est formé dans ladite projection (6a).
  8. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel ledit substrat semi-conducteur (1) est fixé à la paroi intérieure dudit tube isolant (6) par une résine de protection (23).
  9. Le dispositif semi-conducteur dont le contact est établi par pression selon l'une quelconque des revendications 1 à 8, se référant à ladite électrode principale (5) comme une première électrode principale, comprenant de plus une seconde électrode principale (4) contactée par pression au substrat semi-conducteur (1) d'un autre côte que ledit premier côté, et un chemin de transmission de signal de contrôle (10) pour transmettre un signal de contrôle audit substrat semi-conducteur (1), dans lequel ladite seconde électrode principale (4) définit une rainure (4a, 4b) logeant ledit chemin de transmission de signal de contrôle (10) et la largeur d'ouverture d'une forme de la rainure (4a, 4b) augmentant d'une portion plus basse vers une portion d'ouverture.
  10. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel ledit corps tubulaire (43) engage le côté intérieur d'un tube métallique (40), qui est inséré d'une manière fixe dans un trou de passage dans ledit tube isolant (6).
  11. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel ledit corps tubulaire (43) est en saillie vers l'intérieur dudit tube isolant (6) et ledit guidage de lumière (10) est inséré dans le corps tubulaire (43) avec jeu.
  12. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel une partie dudit guidage de lumière (10) est insérée dans ledit corps tubulaire (43) par un corps tubulaire élastique (44).
  13. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel une partie dudit guidage de lumière (10) est attaché audit tube isolant (6) par un corps tubulaire élastique (44).
  14. Le dispositif semi-conducteur dont le contact est établi par pression selon l'une quelconque des revendications 1 à 13, dans lequel ledit guidage de lumière (10) transmet un signal de lumière à une surface de réception de lumière (la) du substrat semi-conducteur (1) et dans lequel ledit dispositif comprend de plus une bague de guidage (51) fixée sur ledit substrat semi-conducteur (1) pour entourer ladite surface de réception de lumière (1a), dans lequel une extrémité d'émission de lumière dudit guidage de lumière (10) est insérée dans ladite bague de guidage (51).
  15. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 14, se référant à ladite bague de guidage (51) comme une première bague de guidage, et comprenant de plus une seconde bague de guidage (50) dans laquelle l'extrémité d'émission de lumière dudit guidage de lumière (10) est insérée, dans lequel l'extrémité d'émission de lumière dudit guidage de lumière (10) est insérée dans ladite première bague de guidage (51) avec jeu et ladite seconde bague de guidage (50) s'accorde avec une périphérie extérieure de ladite première bague de guidage (51).
  16. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 14, dans lequel l'extrémité d'émission de lumière dudit guidage de lumière (10) est fixée à l'intérieur de ladite bague de guidage (51) par un agent optique adhésif (20) mis dans ladite bague de guidage (51).
  17. Le dispositif semi-conducteur dont le contact est établi par pression selon l'une quelconque des revendications 1 à 8, se référant à ladite plaque compensatrice (3) et à ladite électrode principale (5) respectivement comme première plaque compensatrice et première électrode principale, comprenant de plus une seconde plaque compensatrice thermique (2) en contact avec le substrat semi-conducteur (1) d'un autre côté que ledit premier côté et une seconde électrode principale (4) en contact avec ladite seconde plaque compensatrice thermique (2) et une bague (30) qui s'accorde avec des périphéries extérieures de toutes les deux, de ladite seconde plaque compensatrice thermique (2) et de ladite seconde électrode principale (4).
  18. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 17, comprenant de plus un corps élastique (31) interposé entre ladite seconde électrode principale (4) et ladite bague (30), dans lequel la bague (30) s'engage avec une portion de bord d'une surface butant sur ladite seconde électrode principale (4) de ladite seconde plaque compensatrice thermique (2) et ladite bague (30) est pressée et mise sous tension contre ladite seconde plaque compensatrice thermique (2) par une force élastique dudit corps élastique (31).
  19. Le dispositif semi-conducteur dont le contact est établi par pression selon la revendication 1, dans lequel ladite épingle (32, 33) s'étend dans lesdits trous justement avec un jeu minimum.
  20. Le dispositif semi-conducteur dont le contact est établi par pression selon l'une quelconque des revendications 1 à 19, dans lequel ladite épingle (32, 33) est formée en forme d'un cylindre droit de révolution.
  21. Le dispositif semi-conducteur dont le contact est établi par pression selon l'une quelconque des revendications 1, 19 et 20, dans lequel ladite plaque compensatrice thermique (3) est en contact libre d'alliage avec ledit substrat semi-conducteur (1) sur un côté de celle-ci, qu'un chemin de transmission de signal de contrôle (10) pour transmettre un signal de contrôle ne contacte pas.
EP95104855A 1994-04-12 1995-03-31 Dispositif semi-conducteur dont le contact est établi par pression du type déclenché par la lumière Expired - Lifetime EP0687014B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7312894 1994-04-12
JP73128/94 1994-04-12
JP07312894A JP3469304B2 (ja) 1994-04-12 1994-04-12 半導体装置

Publications (3)

Publication Number Publication Date
EP0687014A2 EP0687014A2 (fr) 1995-12-13
EP0687014A3 EP0687014A3 (fr) 1996-05-01
EP0687014B1 true EP0687014B1 (fr) 1999-11-24

Family

ID=13509278

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95104855A Expired - Lifetime EP0687014B1 (fr) 1994-04-12 1995-03-31 Dispositif semi-conducteur dont le contact est établi par pression du type déclenché par la lumière

Country Status (4)

Country Link
US (2) US5621237A (fr)
EP (1) EP0687014B1 (fr)
JP (1) JP3469304B2 (fr)
DE (1) DE69513447T2 (fr)

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DE19626661A1 (de) * 1996-07-03 1998-01-08 Asea Brown Boveri Lichtzündbarer Leistungshalbleiter
DE19627426A1 (de) * 1996-07-08 1998-01-15 Asea Brown Boveri Lichtzündbarer Leistungshalbleiter sowie Verfahren zum Zusammenbauen eines solchen lichtzündbaren Leistungshalbleiters
JP3571354B2 (ja) * 1999-01-18 2004-09-29 三菱電機株式会社 圧接型半導体装置
US7861712B2 (en) * 2004-04-23 2011-01-04 Manta Product Development Sealed capsule including an integrated puncturing mechanism
DE102009034138B4 (de) * 2009-07-22 2011-06-01 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Sandwich mit einem Leistungshalbleiterbauelement
US8631878B2 (en) * 2010-01-21 2014-01-21 Vetco Gray Inc. Wellhead annulus seal assembly and method of using same
US8668021B2 (en) 2010-10-26 2014-03-11 Vetco Gray Inc. Energizing ring nose profile and seal entrance
GB2529338B (en) * 2013-05-13 2019-03-20 Abb Schweiz Ag Spacer system for a semiconductor switching device
JP2016062983A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置
CN109494206B (zh) * 2017-09-12 2022-05-24 株洲中车时代半导体有限公司 一种晶闸管

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JPS63128650A (ja) * 1986-11-19 1988-06-01 Hitachi Ltd 加圧接触形半導体装置
EP0567996A1 (fr) * 1992-04-28 1993-11-03 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur et procédé pour son assemblage

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JPS5949709B2 (ja) * 1979-10-13 1984-12-04 三菱電機株式会社 光点弧サイリスタ装置
JPS57143849A (en) * 1981-03-02 1982-09-06 Toshiba Corp Flat semiconductor element
EP0064383A3 (fr) * 1981-05-06 1984-06-27 LUCAS INDUSTRIES public limited company Un empaquetage pour semiconducteur
JPS58207644A (ja) * 1982-05-29 1983-12-03 Toshiba Corp 半導体装置
JPS58215041A (ja) * 1982-06-09 1983-12-14 Hitachi Ltd 半導体装置
JPS5921062A (ja) * 1982-07-26 1984-02-02 Mitsubishi Electric Corp サイリスタ
JPS59200441A (ja) * 1983-04-27 1984-11-13 Mitsubishi Electric Corp 半導体素子
JPS59231858A (ja) * 1983-06-13 1984-12-26 Mitsubishi Electric Corp 光駆動半導体装置
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JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置
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EP0567996A1 (fr) * 1992-04-28 1993-11-03 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur et procédé pour son assemblage

Also Published As

Publication number Publication date
JPH07283250A (ja) 1995-10-27
US5801429A (en) 1998-09-01
DE69513447D1 (de) 1999-12-30
EP0687014A3 (fr) 1996-05-01
JP3469304B2 (ja) 2003-11-25
US5621237A (en) 1997-04-15
DE69513447T2 (de) 2000-07-06
EP0687014A2 (fr) 1995-12-13

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