EP0747940A2 - Technologie à FET entièrement isolée par diélectrique - Google Patents

Technologie à FET entièrement isolée par diélectrique Download PDF

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Publication number
EP0747940A2
EP0747940A2 EP96303349A EP96303349A EP0747940A2 EP 0747940 A2 EP0747940 A2 EP 0747940A2 EP 96303349 A EP96303349 A EP 96303349A EP 96303349 A EP96303349 A EP 96303349A EP 0747940 A2 EP0747940 A2 EP 0747940A2
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EP
European Patent Office
Prior art keywords
additional
patterned
dielectric layer
thin film
semiconductor material
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Withdrawn
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EP96303349A
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German (de)
English (en)
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EP0747940A3 (fr
Inventor
Richard A. Blanchard
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STMicroelectronics lnc USA
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STMicroelectronics lnc USA
SGS Thomson Microelectronics Inc
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Publication of EP0747940A2 publication Critical patent/EP0747940A2/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Definitions

  • the present inventions relate to integrated circuit devices and processes, and particularly to CMOS devices and processes which are highly resistant to latchup.
  • Latchup is one of the basic problems of CMOS technology.
  • CMOS complementary metal-oxide-semiconductor
  • This sequence of regions will inevitably occur in normal bulk CMOS designs, and it defines a thyristor.
  • This thyristor is referred to as "parasitic,” since it is not created intentionally.
  • a thyristor is a bipolar device which has an extremely low on-resistance. Once the thyristor turns on (or "fires”), it will remain on for as long as it can draw its minimum holding current.
  • Any thyristor can be regarded as a merger of a PNP transistor with an NPN transistor, and this model is frequently a convenient way to analyze the properties of the parasitic thyristor.
  • the gain of the parasitic thyristor is equal to the product of the gains of the bipolar transistors, so degrading the gain of either parasitic bipolar helps to degrade the parasitic thyristor. (Although the thyristor reaches low impedance once triggered, it is still useful to analyze the small-signal "gain" of the thyristor in considering triggering: lower gain will mean that a larger input energy is required to trigger the thyristor.
  • the holding current can be increased, or the firing voltage can be increased, or the gain of one or both of the parasitic bipolar transistors can be degraded, or low-resistance shunting elements can be added to bypass one or both of the parasitic bipolar transistors (so that the current driven by one transistor does not all appear as base current on the other).
  • CMOS complementary metal-oxide-semiconductor
  • punchthrough when the depletion regions around the source/drain boundaries spread sufficiently to touch, then current can bypass the channel region, i.e. the source and drain are essentially shorted together.
  • thin-film transistors Such transistors are fabricated with their channel regions in a deposited thin film layer (typically polycrystalline Si or SiGe). Thin-film transistors do provide full dielectric isolation, but they typically suffer from low mobilities and high junction leakage currents.
  • SOI silicon-on-insulator
  • One of the basic goals in the fabrication of thin film MOS transistors is to obtain the performance of MOS transistors that have been fabricated in single crystal silicon together with device-to-device isolation.
  • the disclosed innovations allow the fabrication of dielectrically isolated thin film MOS transistors as well as other devices with both of these features.
  • the present application provides a CMOS device and process in which the source/drain and channel regions are fully dielectrically-isolated from the underlying silicon.
  • This source/drain regions may be polysilicon, or may be recrystallized into monocrystalline material.
  • the parent application described a process device structure in which the source/drain regions (but not the channels) were separated from the substrate by underlying dielectric layers.
  • the present application describes a modified process and device structure, in which the monocrystalline channel region, as well as the source/drain regions, are dielectrically isolated from the substrate.
  • the substrate defines a crystal lattice for growth or recrystallization of the channel region, but thereafter is separated from the channel region by an oxygen implant which creates a buried oxide layer which creates full dielectric isolation. This results in a fully dielectrically-isolated structure, in which there is no possibility whatsoever of junction spiking or latch-up.
  • the parent application describes the fabrication of MOS transistors with sources and drains made in polysilicon, but with the channel region formed in monocrystalline silicon.
  • the channel regions of MOS transistors fabricated in this fashion are common with the substrate.
  • a layer of silicon dioxide will be formed that separates the silicon channel region from the underlying substrate.
  • This technique can also be used to fabricate diodes and lateral bipolar transistors that have their junctions in the region of single crystal silicon. (In the bipolar transistor the device is lateral, with the base region also formed of single-crystal silicon.)
  • This technology differs significantly from conventional SIMOX technology, which uses ion implantation of oxygen to obtain dielectric isolation.
  • the percentage of chip area that must be successfully annealed following the oxygen implant step is relatively low (just the area that has silicon exposed just prior to deposition of the first polysilicon layer). This reduction in the area requiring successful recrystallization increases the likelihood that the chip will operate as intended.
  • This technology can be combined with various process sequences for manufacturing discrete devices, conventionally integrated circuits, and power integrated circuits. This technology also retains the advantages described in the parent application.
  • the edge of the oxide which defines the active region is not self-aligned to the gate in the second polysilicon layer.
  • Manipulation of this kind can be used in combination with the conventional side-wall-oxide-defined LDD regions, or even with a conventional double-diffused graded drain (formed by differential diffusion of phosphorous plus arsenic).
  • this new technique permits ASYMMETRY in the transistor, in that the source and drain regions do not have to have exactly the same profile.
  • the potential contour of the drain boundary can be optimized without adding series resistance on the source side.
  • the thickness of the oxide which is used to determine the size of the monocrystalline silicon region is not critical.
  • the thickness of this oxide can be determined by other considerations.
  • the oxide layer can be used for the gate oxide of VDMOS or LDMOS high voltage and/or high-current transistors.
  • this device structure can be used for just one of the device types in a CMOS integrated circuit. For example, by making the PMOS devices, but not the NMOS devices, in the poly1/epi layer, the NMOS and PMOS devices can actually be overlapped with each other. (The removal of the PMOS devices from the substrate is enough to inhibit latchup.) Thus, this provides significant advantages in density.
  • the oxide which is used to define apertures where crystalline material will be grown is not itself field oxide, but is used in combination with a LOCOS field oxide which covers the margins of the P-well and N-well regions.
  • various other techniques for field isolation can be used, or it may even be possible to eliminate the field oxide (IF the combination of on-chip voltages, dielectric thickness under the polysilicon lines, and substrate doping under the polysilicon lines combine, according to well-known formulas, so that the parasitic transistors do not turn on).
  • the same process flow can be used to provide a self-aligned channel stop implant.
  • a channel stop implant is performed (with an energy which is selected to reach through the oxide thickness), after the gate structure in poly-2 is in place. (Depending on the desired lateral spacing of the channel stop diffusions, this implant can be performed with or without sidewall spacers on the gate.)
  • This technique provides an important further step toward a process with no conventional "thick field-oxide" at all. Such a process can provide the important advantages of reduced topography, reduced diffusion length of buried layers, and reduced process complexity.
  • FIGS 1-8 show sequential steps in fabrication of an integrated circuit device using the methods of the present invention.
  • a method for fabricating integrated circuit devices comprising the steps of: providing substantially monolithic semiconductor material; covering part of the surface of said material with a patterned dielectric layer, said patterned dielectric layer leaving said material exposed in transistor channel locations; forming additional semiconductor material as monocrystalline semiconductor material on said transistor channel locations and as polycrystalline semiconductor material elsewhere; said semiconductor material being formed to a thickness which is greater than the thickness of said patterned dielectric layer; implanting an oxidizing species at an energy which forms a buried dielectric layer in said channel regions, and patterning said additional material to form a patterned thin film layer, and forming a gate dielectric on said additional material; forming an additional patterned conductive thin film layer on said gate dielectric; implanting dopants of a desired conductivity type into said additional material where exposed by said additional patterned conductive thin film layer; whereby monocrystalline portions of said additional material beneath said additional patterned conductive thin film layer form transistor channel regions, and polycrystalline portions of said additional material provide source and drain regions adjacent thereto
  • a method for fabricating integrated circuit devices comprising the steps of: providing substantially monolithic semiconductor material; covering part of the surface of said material with a patterned dielectric layer which leaves said monolithic body exposed in transistor channel locations; depositing additional semiconductor material overall, as epitaxially matched monocrystalline semiconductor material on said monolithic body in said transistor channel locations, and as polycrystalline semiconductor material elsewhere; said semiconductor material being formed to a thickness which is greater than the thickness of said patterned dielectric layer; implanting an oxidizing species at an energy which forms a buried dielectric layer in said channel regions, and patterning said additional material to form a patterned thin film layer, and forming a gate dielectric on said additional material; forming an additional patterned conductive thin film layer, comprising polycrystalline semiconductor material, on said gate dielectric; and implanting dopants of a desired conductivity type into said additional material where exposed by said additional patterned conductive thin film layer; whereby monocrystalline portions of said additional material beneath said additional patterned conductive thin film layer form
  • a method for fabricating CMOS integrated circuit devices comprising the steps of: providing a substrate which includes at least one substantially monolithic body of semiconductor material, having at least one first-conductivity-type surface region and at least one second-conductivity-type surface region; covering part of the surface of said monolithic body with a patterned dielectric layer, said patterned dielectric layer leaving said monolithic body exposed in transistor channel locations; forming additional semiconductor material, as monocrystalline semiconductor material on said monolithic body in said transistor channel locations, and as polycrystalline semiconductor material elsewhere; said additional material being formed to a thickness greater than the thickness of said patterned dielectric layer; implanting an oxidizing species at an energy which forms a buried dielectric layer in said channel regions, and patterning said additional material to form a patterned thin film layer, and forming a gate dielectric on said additional material; forming an additional patterned conductive thin film layer on said gate dielectric; implanting first-conductivity-type dopants over locations of said second-
  • An integrated circuit field-effect transistor structure comprising: a monocrystalline semiconductor channel region; a conductive gate capacitively coupled to said channel region; a monocrystalline semiconductor body region which underlies and is epitaxially continuous with said channel region; first and second polycrystalline semiconductor source/drain regions which laterally adjoin opposing sides of said channel region, and each extend continuously therefrom; a first patterned dielectric layer, which underlies said source/drain regions but not said channel region; said patterned dielectric layer being thinner than said semiconductor source/drain regions; and a second patterned dielectric layer, which underlies said channel region and is thinner than said first patterned dielectric layer.
  • the source/drain implantation can be done as a two-step process, using sidewall dielectrics for self-aligned masking of the N+ implant, just as is conventionally done to form LDD regions.
  • the conventional field oxide 220 can be deleted if desired: since the active devices are not connected to the substrate, conduction in the substrate is not a concern.
  • this oxide does provide advantages in capacitance and defect reduction.
  • the heavy oxygen implant does not have to be fully unpatterned, but can optionally be patterned using an oxide or nitride hardmask.
  • the etch which patterns the oxide at the channel edges can be tailored, if desired, to provide an edge contour which is not vertical.
  • the annealing conditions can readily be adjusted to vary the distance to which lateral epitaxial growth produces crystalline material over the oxide.
  • a lateral extension of the first polysilicon layer, normal to the channel, can be used to provide a back-bias (body) connection for the transistor.
  • the illustrated sample embodiment uses a P-well 104 and an N-well 102, but these really just serve to provide back-bias (due to electrostatic coupling through the buried oxide 499). It is not necessary to use both of these wells, since the doping of one may be supplied by the substrate, but both have been illustrated to make clear that the choice of an N-well, P-well, or twin-tub process is completely indifferent.
  • a backside contact normally defines the substrate potential, but it is not necessary to make contact to the well (since it will bias itself, with respect to the substrate, at the built-in potential of its junction).
  • lateral npn and pnp transistors can easily be manufactured in the same process.
  • a patterned etch can be used to cut contacts through oxide to the bulk silicon if this is desired for other devices.
  • a nitride layer can optionally be patterned over the pad oxide to provide selective oxidation and oxide implantation if desired.
  • the masking can optionally be adjusted to leave part of poly1 undoped.
  • Such intrinsic material has a very high sheet resistance, and can be used for a variety of purposes (even in a CMOS structure), e.g. defining power-on states, providing low-power voltage divider chains, power-supply-dropping in very-low-power circuits, and rad-hard gates (using a resistor interposed between the two nodes of a CMOS latch).

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
EP96303349A 1995-06-07 1996-05-13 Technologie à FET entièrement isolée par diélectrique Withdrawn EP0747940A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US474710 1995-06-07
US08/474,710 US5773328A (en) 1995-02-28 1995-06-07 Method of making a fully-dielectric-isolated fet

Publications (2)

Publication Number Publication Date
EP0747940A2 true EP0747940A2 (fr) 1996-12-11
EP0747940A3 EP0747940A3 (fr) 1999-05-06

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EP (1) EP0747940A3 (fr)
JP (1) JPH0922950A (fr)

Cited By (23)

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EP0924773A1 (fr) * 1997-12-15 1999-06-23 Nec Corporation Dispositif semi-conducteur incluant un MOSFET SOI ayant des electrodes de source et de drain comprenant une couche de siliciure d'un métal et procédé de fabrication correspondant
EP0875927A3 (fr) * 1997-05-01 1999-07-07 International Business Machines Corporation Méthode de fabrication de dispositifs FET ayant des fossés d'isolation peu profonds sans masque
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6812084B2 (en) 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6847562B2 (en) 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6864104B2 (en) 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6894327B1 (en) 2001-12-21 2005-05-17 Progressant Technologies, Inc. Negative differential resistance pull up element
US6912151B2 (en) 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US7015536B2 (en) 2002-12-09 2006-03-21 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7095659B2 (en) 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US7098472B2 (en) 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
EP1274134A3 (fr) * 2001-07-04 2006-11-02 Matsushita Electric Industrial Co., Ltd. Transistor MOS et sa méthode de fabrication
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell

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Publication number Priority date Publication date Assignee Title
US5773328A (en) 1995-02-28 1998-06-30 Sgs-Thomson Microelectronics, Inc. Method of making a fully-dielectric-isolated fet
US6420764B1 (en) * 1995-02-28 2002-07-16 Stmicroelectronics, Inc. Field effect transitor having dielectrically isolated sources and drains and methods for making same
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EP0747940A3 (fr) 1999-05-06
US6291845B1 (en) 2001-09-18
JPH0922950A (ja) 1997-01-21
US5773328A (en) 1998-06-30
US5981318A (en) 1999-11-09

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