EP0768593A3 - Circuit générateur de courant de référence - Google Patents

Circuit générateur de courant de référence Download PDF

Info

Publication number
EP0768593A3
EP0768593A3 EP96116361A EP96116361A EP0768593A3 EP 0768593 A3 EP0768593 A3 EP 0768593A3 EP 96116361 A EP96116361 A EP 96116361A EP 96116361 A EP96116361 A EP 96116361A EP 0768593 A3 EP0768593 A3 EP 0768593A3
Authority
EP
European Patent Office
Prior art keywords
reference current
generating circuit
current generating
variation
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96116361A
Other languages
German (de)
English (en)
Other versions
EP0768593A2 (fr
Inventor
Kiyoshi Kanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0768593A2 publication Critical patent/EP0768593A2/fr
Publication of EP0768593A3 publication Critical patent/EP0768593A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Amplifiers (AREA)
EP96116361A 1995-10-11 1996-10-11 Circuit générateur de courant de référence Withdrawn EP0768593A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP289318/95 1995-10-11
JP7289318A JP2917877B2 (ja) 1995-10-11 1995-10-11 基準電流発生回路

Publications (2)

Publication Number Publication Date
EP0768593A2 EP0768593A2 (fr) 1997-04-16
EP0768593A3 true EP0768593A3 (fr) 1998-01-21

Family

ID=17741645

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96116361A Withdrawn EP0768593A3 (fr) 1995-10-11 1996-10-11 Circuit générateur de courant de référence

Country Status (5)

Country Link
US (1) US6377113B1 (fr)
EP (1) EP0768593A3 (fr)
JP (1) JP2917877B2 (fr)
KR (1) KR100225825B1 (fr)
TW (1) TW371372B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002354195A (ja) * 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置
JP3903770B2 (ja) * 2001-11-08 2007-04-11 日本電気株式会社 データ線駆動回路
KR100543318B1 (ko) * 2002-10-07 2006-01-20 주식회사 하이닉스반도체 부스팅 전압 제어회로
US6891357B2 (en) * 2003-04-17 2005-05-10 International Business Machines Corporation Reference current generation system and method
US7061304B2 (en) * 2004-01-28 2006-06-13 International Business Machines Corporation Fuse latch with compensated programmable resistive trip point
JP4385811B2 (ja) * 2004-03-24 2009-12-16 株式会社デンソー 定電流回路
US8106862B2 (en) * 2004-05-19 2012-01-31 Sharp Kabushiki Kaisha Liquid crystal display device for reducing influence of voltage drop in time-division driving, method for driving the same, liquid crystal television having the same and liquid crystal monitor having the same
US7296247B1 (en) * 2004-08-17 2007-11-13 Xilinx, Inc. Method and apparatus to improve pass transistor performance
KR100775057B1 (ko) 2004-12-13 2007-11-08 삼성전자주식회사 트랜지스터 정합 특성이 향상된 데이터 드라이브 집적회로를 구비한 디스플레이 장치
JP4848689B2 (ja) * 2005-07-11 2011-12-28 セイコーエプソン株式会社 半導体集積回路
JP2007226627A (ja) * 2006-02-24 2007-09-06 Seiko Instruments Inc ボルテージレギュレータ
JP5088031B2 (ja) * 2007-08-01 2012-12-05 富士電機株式会社 定電流・定電圧回路
JP5318676B2 (ja) * 2009-06-25 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2011015259A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置およびその試験方法
JP2011053957A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
KR101389620B1 (ko) * 2011-10-28 2014-04-29 에스케이하이닉스 주식회사 멀티 레귤레이터 회로 및 이를 구비한 집적회로
JP6232925B2 (ja) * 2013-10-28 2017-11-22 富士電機株式会社 入力回路
US9252713B2 (en) 2014-02-27 2016-02-02 Qualcomm Incorporated Bias circuits and methods for stacked devices
CN107742498B (zh) * 2017-11-24 2021-02-09 京东方科技集团股份有限公司 参考电压电路、参考电压提供模组和显示装置
JP2024077674A (ja) * 2022-11-29 2024-06-10 エイブリック株式会社 基準電流源
US12566464B2 (en) * 2023-08-21 2026-03-03 Himax Imaging Limited Power ground noise reduction system capable of reducing noise voltage interference

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198622A (en) * 1978-02-21 1980-04-15 National Semiconductor Corporation Double digital-to-analog converter
US4251743A (en) * 1977-10-28 1981-02-17 Nippon Electric Co., Ltd. Current source circuit
US4354175A (en) * 1980-05-01 1982-10-12 Mostek Corporation Analog/digital converter utilizing a single column of analog switches
JPS5966725A (ja) * 1982-10-07 1984-04-16 Nippon Denso Co Ltd 定電流回路
JPH02145012A (ja) * 1988-11-26 1990-06-04 Nec Corp 基準電圧トリミング回路
JPH03172906A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd トリミング回路
EP0606888A2 (fr) * 1993-01-12 1994-07-20 Hitachi, Ltd. Circuit d'attaque de ligne de communication, LSI pour une interface comportant un tel circuit et terminal de communication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331913A (en) * 1980-10-02 1982-05-25 Bell Telephone Laboratories, Incorporated Precision negative impedance circuit with calibration
JPS6331224A (ja) 1986-07-24 1988-02-09 Fuji Electric Co Ltd Ａ／ｄ変換サンプル値の精度改善方式
JPH06243678A (ja) * 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍとそのプレート電圧設定方法及び情報処理システム
JP3156447B2 (ja) * 1993-06-17 2001-04-16 富士通株式会社 半導体集積回路
JPH07170188A (ja) 1993-12-14 1995-07-04 Yamaha Corp Ｄａコンバータ回路
US5640122A (en) * 1994-12-16 1997-06-17 Sgs-Thomson Microelectronics, Inc. Circuit for providing a bias voltage compensated for p-channel transistor variations
US5568084A (en) * 1994-12-16 1996-10-22 Sgs-Thomson Microelectronics, Inc. Circuit for providing a compensated bias voltage
US5504447A (en) * 1995-06-07 1996-04-02 United Memories Inc. Transistor programmable divider circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251743A (en) * 1977-10-28 1981-02-17 Nippon Electric Co., Ltd. Current source circuit
US4198622A (en) * 1978-02-21 1980-04-15 National Semiconductor Corporation Double digital-to-analog converter
US4354175A (en) * 1980-05-01 1982-10-12 Mostek Corporation Analog/digital converter utilizing a single column of analog switches
JPS5966725A (ja) * 1982-10-07 1984-04-16 Nippon Denso Co Ltd 定電流回路
JPH02145012A (ja) * 1988-11-26 1990-06-04 Nec Corp 基準電圧トリミング回路
JPH03172906A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd トリミング回路
EP0606888A2 (fr) * 1993-01-12 1994-07-20 Hitachi, Ltd. Circuit d'attaque de ligne de communication, LSI pour une interface comportant un tel circuit et terminal de communication

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 008, no. 171 (P - 293) 8 August 1984 (1984-08-08) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 391 (E - 0968) 23 August 1990 (1990-08-23) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 424 (P - 1268) 28 October 1991 (1991-10-28) *

Also Published As

Publication number Publication date
US6377113B1 (en) 2002-04-23
KR100225825B1 (ko) 1999-10-15
KR970023370A (ko) 1997-05-30
JP2917877B2 (ja) 1999-07-12
TW371372B (en) 1999-10-01
JPH09106316A (ja) 1997-04-22
EP0768593A2 (fr) 1997-04-16

Similar Documents

Publication Publication Date Title
EP0768593A3 (fr) Circuit générateur de courant de référence
US5570005A (en) Wide range power supply for integrated circuits
US4677369A (en) CMOS temperature insensitive voltage reference
EP0576774A1 (fr) Régulateur de tension pour dispositifs de mémoire
US20020044008A1 (en) Constant current driver circuit
EP0322842A3 (fr) Comparateur de tension ayant des caractéristiques d'hystérésis
EP0812068A3 (fr) Circuit d'attaque de sortie différentiel avec référence commune
DE69414930D1 (de) Schaltkreis zur Erzeugung von Referenzspannungen unter Verwendung einer Schwellenwertdifferenz zwischen zwei MOS-Transistoren
CA2145358A1 (fr) Circuit pour commander les tensions des transistors d'un circuit logique mos et systeme d'asservissement de l'alimentation a ce dernier
IT8220661A0 (it) Processo per la fabbricazione di transistori mos complementari in circuiti integrati ad alta densita' per tensioni elevate.
US6518833B2 (en) Low voltage PVT insensitive MOSFET based voltage reference circuit
EP0718744A3 (fr) Source de courant ajustable
EP1681608A3 (fr) Circuit électronique, dispositif à semi-conducteurs, équipement électronique, et horloge
EP0945986A3 (fr) Circuit pompe de charge pour boucle à verrouillage de phase
US6137273A (en) Circuit for supplying a high precision current to an external element
EP0898215A3 (fr) Circuit de tension de référence et méthode
EP0330823A3 (fr) Dispositif à faible absorption pour commander un transistor de puissance vers son état conducteur
US6831503B2 (en) Current or voltage generator with a temperature stable operating point
EP0375197A3 (fr) Circuit intégré ayant une tension d'alimentation réduite
JPS6238607A (ja) バイアス回路
US20020145466A1 (en) Internal power voltage generating circuit of semiconductor device
US20040032293A1 (en) Circuit and method for a programmable reference voltage
US5834966A (en) Integrated circuit sensing and digitally biasing the threshold voltage of transistors and related methods
EP0007804A1 (fr) Circuit de polarisation stabilise avec une dépendence prédeterminee de la témperature
EP1178383B1 (fr) Circuit pour générer un signal de tension insensible aux variations de température et peu sensible aux variations des variables de fabrication

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB

17P Request for examination filed

Effective date: 19971211

17Q First examination report despatched

Effective date: 19991228

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Withdrawal date: 20000621