EP2013407A4 - Appareil de collage anodique à haute température - Google Patents

Appareil de collage anodique à haute température

Info

Publication number
EP2013407A4
EP2013407A4 EP07755626A EP07755626A EP2013407A4 EP 2013407 A4 EP2013407 A4 EP 2013407A4 EP 07755626 A EP07755626 A EP 07755626A EP 07755626 A EP07755626 A EP 07755626A EP 2013407 A4 EP2013407 A4 EP 2013407A4
Authority
EP
European Patent Office
Prior art keywords
high temperature
bonding apparatus
anodic bonding
temperature anodic
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07755626A
Other languages
German (de)
English (en)
Other versions
EP2013407A2 (fr
Inventor
Raymond C Cady
Iii John J Costello
Alexander Lakota
William E Lock
John C Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of EP2013407A2 publication Critical patent/EP2013407A2/fr
Publication of EP2013407A4 publication Critical patent/EP2013407A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
EP07755626A 2006-04-21 2007-04-18 Appareil de collage anodique à haute température Withdrawn EP2013407A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79397606P 2006-04-21 2006-04-21
US11/417,445 US20070246450A1 (en) 2006-04-21 2006-05-03 High temperature anodic bonding apparatus
PCT/US2007/009423 WO2007127111A2 (fr) 2006-04-21 2007-04-18 Appareil de collage anodique à haute température

Publications (2)

Publication Number Publication Date
EP2013407A2 EP2013407A2 (fr) 2009-01-14
EP2013407A4 true EP2013407A4 (fr) 2011-05-18

Family

ID=38618501

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07755626A Withdrawn EP2013407A4 (fr) 2006-04-21 2007-04-18 Appareil de collage anodique à haute température

Country Status (6)

Country Link
US (1) US20070246450A1 (fr)
EP (1) EP2013407A4 (fr)
JP (1) JP2009534842A (fr)
KR (1) KR20090018060A (fr)
TW (1) TW200811992A (fr)
WO (1) WO2007127111A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2094440B1 (fr) * 2006-11-30 2010-04-21 Corning Incorporated Usinage abrasif de précision des surfaces d'une pièce de fabrication
US7947570B2 (en) * 2008-01-16 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and manufacturing apparatus of semiconductor substrate
JP5412731B2 (ja) * 2008-02-19 2014-02-12 株式会社ニコン 加熱加圧システム及び冷却装置
JP5386193B2 (ja) * 2008-02-26 2014-01-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5455445B2 (ja) * 2009-05-29 2014-03-26 信越化学工業株式会社 貼り合わせウェーハの製造方法
US8062956B2 (en) * 2009-08-26 2011-11-22 Corning Incorporated Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process
JP4801769B2 (ja) * 2009-11-30 2011-10-26 三菱重工業株式会社 接合方法、接合装置制御装置、接合装置
CN102986020A (zh) 2010-06-30 2013-03-20 康宁股份有限公司 对绝缘体基材上的硅进行精整的方法
US8557679B2 (en) 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
US8357974B2 (en) 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
JP5882939B2 (ja) * 2013-05-01 2016-03-09 東京エレクトロン株式会社 接合方法、接合装置および接合システム
KR102455439B1 (ko) * 2017-10-26 2022-10-14 엘지전자 주식회사 파워모듈용 소결 장치
CN112216632B (zh) * 2020-09-24 2024-04-19 广东海信宽带科技有限公司 一种ld芯片共晶焊接台
US11825568B2 (en) * 2021-04-01 2023-11-21 Whirlpool Corporation Segmented thermoresistive heating system
CN116904972B (zh) * 2023-07-25 2025-12-19 拓荆科技(上海)有限公司 一种加热盘、控制方法、存储介质及晶圆间距的调节机构
CN121038024B (zh) * 2025-10-23 2026-01-23 长春长光启辰科技有限公司 一种导热均匀的碳化硅陶瓷加热盘

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4219774C1 (de) * 1992-06-17 1994-01-27 Mannesmann Kienzle Gmbh Verfahren und Vorrichtung zum Stapeln von Substraten, die durch Bonden miteinander zu verbinden sind
US5472549A (en) * 1994-07-08 1995-12-05 Enclosure Technologies, Inc. Apparatus for electronically seam fusing dissimilar polymeric materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures

Also Published As

Publication number Publication date
WO2007127111A3 (fr) 2008-12-11
KR20090018060A (ko) 2009-02-19
WO2007127111A2 (fr) 2007-11-08
US20070246450A1 (en) 2007-10-25
EP2013407A2 (fr) 2009-01-14
TW200811992A (en) 2008-03-01
JP2009534842A (ja) 2009-09-24

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