WO2007127111A3 - Appareil de collage anodique à haute température - Google Patents

Appareil de collage anodique à haute température Download PDF

Info

Publication number
WO2007127111A3
WO2007127111A3 PCT/US2007/009423 US2007009423W WO2007127111A3 WO 2007127111 A3 WO2007127111 A3 WO 2007127111A3 US 2007009423 W US2007009423 W US 2007009423W WO 2007127111 A3 WO2007127111 A3 WO 2007127111A3
Authority
WO
WIPO (PCT)
Prior art keywords
bonding plate
operable
voltage
pressure
anodic bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/009423
Other languages
English (en)
Other versions
WO2007127111A2 (fr
Inventor
Raymond C Cady
Iii John J Costello
Alexander Lakota
William E Lock
John C Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Priority to JP2009506550A priority Critical patent/JP2009534842A/ja
Priority to EP07755626A priority patent/EP2013407A4/fr
Publication of WO2007127111A2 publication Critical patent/WO2007127111A2/fr
Anticipated expiration legal-status Critical
Publication of WO2007127111A3 publication Critical patent/WO2007127111A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Joining Of Glass To Other Materials (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un appareil de collage anodique comportant un premier mécanisme à plateau de collage pouvant être actionné pour engager une première feuille de matériau et chauffer, alimenter en tension et/ou refroidir ladite feuille de manière contrôlée, un second mécanisme à plateau de collage pouvant être actionné pour engager une seconde feuille de matériau et chauffer, alimenter en tension et/ou refroidir ladite feuille de manière contrôlée, un mécanisme de pression relié fonctionnellement aux premier et second mécanismes à plateau de collage et pouvant être actionné pour amener ces premier et second mécanismes à plateau de collage l'un vers l'autre, afin que les première et seconde feuilles de matériau soient pressées l'une contre l'autre de manière contrôlée le long de leurs surfaces respectives, ainsi qu'une unité de commande pouvant être actionnée pour transmettre des signaux de commande aux premier et second mécanismes à plateau de collage et au mécanisme de pression afin de leur fournir des profils d'application de chaleur, de tension et de pression permettant le collage anodique des première et seconde feuilles de matériau.
PCT/US2007/009423 2006-04-21 2007-04-18 Appareil de collage anodique à haute température Ceased WO2007127111A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009506550A JP2009534842A (ja) 2006-04-21 2007-04-18 高温陽極接合形成装置
EP07755626A EP2013407A4 (fr) 2006-04-21 2007-04-18 Appareil de collage anodique à haute température

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US79397606P 2006-04-21 2006-04-21
US60/793,976 2006-04-21
US11/417,445 2006-05-03
US11/417,445 US20070246450A1 (en) 2006-04-21 2006-05-03 High temperature anodic bonding apparatus

Publications (2)

Publication Number Publication Date
WO2007127111A2 WO2007127111A2 (fr) 2007-11-08
WO2007127111A3 true WO2007127111A3 (fr) 2008-12-11

Family

ID=38618501

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/009423 Ceased WO2007127111A2 (fr) 2006-04-21 2007-04-18 Appareil de collage anodique à haute température

Country Status (6)

Country Link
US (1) US20070246450A1 (fr)
EP (1) EP2013407A4 (fr)
JP (1) JP2009534842A (fr)
KR (1) KR20090018060A (fr)
TW (1) TW200811992A (fr)
WO (1) WO2007127111A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602007006051D1 (de) * 2006-11-30 2010-06-02 Corning Inc Präzisionsschleifbearbeitung von werkstückoberflächen
US7947570B2 (en) * 2008-01-16 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and manufacturing apparatus of semiconductor substrate
JP5412731B2 (ja) * 2008-02-19 2014-02-12 株式会社ニコン 加熱加圧システム及び冷却装置
JP5386193B2 (ja) * 2008-02-26 2014-01-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5455445B2 (ja) * 2009-05-29 2014-03-26 信越化学工業株式会社 貼り合わせウェーハの製造方法
US8062956B2 (en) * 2009-08-26 2011-11-22 Corning Incorporated Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process
JP4801769B2 (ja) * 2009-11-30 2011-10-26 三菱重工業株式会社 接合方法、接合装置制御装置、接合装置
US20130089968A1 (en) 2010-06-30 2013-04-11 Alex Usenko Method for finishing silicon on insulator substrates
US8357974B2 (en) 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
US8557679B2 (en) 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
JP5882939B2 (ja) * 2013-05-01 2016-03-09 東京エレクトロン株式会社 接合方法、接合装置および接合システム
KR102455439B1 (ko) * 2017-10-26 2022-10-14 엘지전자 주식회사 파워모듈용 소결 장치
CN112216632B (zh) * 2020-09-24 2024-04-19 广东海信宽带科技有限公司 一种ld芯片共晶焊接台
US11825568B2 (en) * 2021-04-01 2023-11-21 Whirlpool Corporation Segmented thermoresistive heating system
CN116904972B (zh) * 2023-07-25 2025-12-19 拓荆科技(上海)有限公司 一种加热盘、控制方法、存储介质及晶圆间距的调节机构
CN121038024B (zh) * 2025-10-23 2026-01-23 长春长光启辰科技有限公司 一种导热均匀的碳化硅陶瓷加热盘

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168678B1 (en) * 1992-06-17 2001-01-02 Mannesmann Kienzle Gmbh Method and device for stacking substrates which are to be joined by bonding

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472549A (en) * 1994-07-08 1995-12-05 Enclosure Technologies, Inc. Apparatus for electronically seam fusing dissimilar polymeric materials
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168678B1 (en) * 1992-06-17 2001-01-02 Mannesmann Kienzle Gmbh Method and device for stacking substrates which are to be joined by bonding

Also Published As

Publication number Publication date
JP2009534842A (ja) 2009-09-24
US20070246450A1 (en) 2007-10-25
EP2013407A2 (fr) 2009-01-14
WO2007127111A2 (fr) 2007-11-08
TW200811992A (en) 2008-03-01
EP2013407A4 (fr) 2011-05-18
KR20090018060A (ko) 2009-02-19

Similar Documents

Publication Publication Date Title
WO2009078347A1 (fr) Machine de pressage à plat, appareil de stratification et procédé de stratification utilisant une machine de pressage à plat et un appareil de stratification
GB0800240D0 (en) Improved structural sandwich plate panels
WO2007127079A3 (fr) Mécanisme de plaque de soudage destiné à être utilisé dans le soudage anodique
MX2009007711A (es) Paneles de piso mejorados.
WO2010014422A3 (fr) Appareil de chauffage à micro-ondes
WO2010132422A3 (fr) Panneaux stratifiés à âme structurée et leurs procédés de façonnage
WO2009054125A1 (fr) Dispositif de cuisson
TW200714451A (en) Sheet forming apparatus and roller gap control method
EP2002193A4 (fr) echangeur THERMIQUE a plaques
WO2009044515A1 (fr) Système de commande d'un matelas pneumatique
WO2008112845A3 (fr) Appareil pour expansion cellulaire avec bioréacteur à plaques
EP2034520A4 (fr) Feuille flexible à conduction de chaleur élevée
WO2008099817A1 (fr) Élément spectral variable
WO2007115880A3 (fr) Appareil frigorifique à espace intérieur subdivisé
WO2008136228A1 (fr) Etage pour une unité de commande de température de substrat
MX2010005137A (es) Prensa de investigacion.
JP2009295846A5 (fr)
WO2007127825A3 (fr) Outil de fabrication pour collage
PT2250457E (pt) Permutador térmico de placas, placa de permutador térmico e processo para o seu fabrico
CA2631235A1 (fr) Procede de production d'un lamine extensible
GB0910938D0 (en) Method of manufacturing a structure
WO2009002852A3 (fr) Jointure multicouche réactive pour contrôler une contrainte thermique
TW200637708A (en) Press
WO2007089865A3 (fr) Matériau interface thermique métallique ré-usinable assurant un échange thermique efficace
TW200504799A (en) Fluid control apparatus with heating device

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780014259.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07755626

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2009506550

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2007755626

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020087028450

Country of ref document: KR