TW200811992A - High temperature anodic bonding apparatus - Google Patents

High temperature anodic bonding apparatus Download PDF

Info

Publication number
TW200811992A
TW200811992A TW096114186A TW96114186A TW200811992A TW 200811992 A TW200811992 A TW 200811992A TW 096114186 A TW096114186 A TW 096114186A TW 96114186 A TW96114186 A TW 96114186A TW 200811992 A TW200811992 A TW 200811992A
Authority
TW
Taiwan
Prior art keywords
bonding
plate member
operable
voltage
heating
Prior art date
Application number
TW096114186A
Other languages
English (en)
Chinese (zh)
Inventor
Raymond Carles Cady
John Joseph Costello Iii
Alexander Lakota
William Edward Lock
John Christopher Thomas
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of TW200811992A publication Critical patent/TW200811992A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Joining Of Glass To Other Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
TW096114186A 2006-04-21 2007-04-20 High temperature anodic bonding apparatus TW200811992A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79397606P 2006-04-21 2006-04-21
US11/417,445 US20070246450A1 (en) 2006-04-21 2006-05-03 High temperature anodic bonding apparatus

Publications (1)

Publication Number Publication Date
TW200811992A true TW200811992A (en) 2008-03-01

Family

ID=38618501

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114186A TW200811992A (en) 2006-04-21 2007-04-20 High temperature anodic bonding apparatus

Country Status (6)

Country Link
US (1) US20070246450A1 (fr)
EP (1) EP2013407A4 (fr)
JP (1) JP2009534842A (fr)
KR (1) KR20090018060A (fr)
TW (1) TW200811992A (fr)
WO (1) WO2007127111A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2094440B1 (fr) * 2006-11-30 2010-04-21 Corning Incorporated Usinage abrasif de précision des surfaces d'une pièce de fabrication
US7947570B2 (en) * 2008-01-16 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and manufacturing apparatus of semiconductor substrate
JP5412731B2 (ja) * 2008-02-19 2014-02-12 株式会社ニコン 加熱加圧システム及び冷却装置
JP5386193B2 (ja) * 2008-02-26 2014-01-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5455445B2 (ja) * 2009-05-29 2014-03-26 信越化学工業株式会社 貼り合わせウェーハの製造方法
US8062956B2 (en) * 2009-08-26 2011-11-22 Corning Incorporated Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process
JP4801769B2 (ja) * 2009-11-30 2011-10-26 三菱重工業株式会社 接合方法、接合装置制御装置、接合装置
CN102986020A (zh) 2010-06-30 2013-03-20 康宁股份有限公司 对绝缘体基材上的硅进行精整的方法
US8557679B2 (en) 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
US8357974B2 (en) 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
JP5882939B2 (ja) * 2013-05-01 2016-03-09 東京エレクトロン株式会社 接合方法、接合装置および接合システム
KR102455439B1 (ko) * 2017-10-26 2022-10-14 엘지전자 주식회사 파워모듈용 소결 장치
CN112216632B (zh) * 2020-09-24 2024-04-19 广东海信宽带科技有限公司 一种ld芯片共晶焊接台
US11825568B2 (en) * 2021-04-01 2023-11-21 Whirlpool Corporation Segmented thermoresistive heating system
CN116904972B (zh) * 2023-07-25 2025-12-19 拓荆科技(上海)有限公司 一种加热盘、控制方法、存储介质及晶圆间距的调节机构
CN121038024B (zh) * 2025-10-23 2026-01-23 长春长光启辰科技有限公司 一种导热均匀的碳化硅陶瓷加热盘

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4219774C1 (de) * 1992-06-17 1994-01-27 Mannesmann Kienzle Gmbh Verfahren und Vorrichtung zum Stapeln von Substraten, die durch Bonden miteinander zu verbinden sind
US5472549A (en) * 1994-07-08 1995-12-05 Enclosure Technologies, Inc. Apparatus for electronically seam fusing dissimilar polymeric materials
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures

Also Published As

Publication number Publication date
WO2007127111A3 (fr) 2008-12-11
EP2013407A4 (fr) 2011-05-18
KR20090018060A (ko) 2009-02-19
WO2007127111A2 (fr) 2007-11-08
US20070246450A1 (en) 2007-10-25
EP2013407A2 (fr) 2009-01-14
JP2009534842A (ja) 2009-09-24

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