EP2157603B1 - Verfahren zur Herstellung von lokalisierten GeOI-Strukturen, die durch Germanium-Anreicherung erhalten werden - Google Patents

Verfahren zur Herstellung von lokalisierten GeOI-Strukturen, die durch Germanium-Anreicherung erhalten werden Download PDF

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EP2157603B1
EP2157603B1 EP09168024A EP09168024A EP2157603B1 EP 2157603 B1 EP2157603 B1 EP 2157603B1 EP 09168024 A EP09168024 A EP 09168024A EP 09168024 A EP09168024 A EP 09168024A EP 2157603 B1 EP2157603 B1 EP 2157603B1
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layer
germanium
sige
silicon
doped
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EP2157603A1 (de
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Jean-Francois Damlencourt
Benjamin Vincent
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01356—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Definitions

  • the invention relates to a method for producing localized GeOI structures, obtained by germanium enrichment.
  • C-MOS Complementary Metal Oxide Semiconductor
  • N-MOS electron-conduction transistor
  • P-MOS hole conduction transistor
  • These two types of transistors are associated to perform logical functions (OR, AND, NOR, NAND, etc.) or memory points (SRAM-6T for example).
  • SRAM-6T memory points
  • the electrical characteristics of the N-MOS and P-MOS transistors have dissymmetries and the P-MOS are much less performance (in terms of current flow and therefore speed) than the N-MOS.
  • the co-integration of a silicon N-MOS and a germanium P-MOS on the same substrate is a way to improve the characteristics of the P-MOS in the C-MOS circuit but also to balance the transistors N and P both in terms of current level and in terms of time constants and this without loss of space.
  • the volume mobility of the holes in the germanium is of the order of 1900 cm 2 / V / s and that of the electrons in the silicon is close to 1500 cm 2 / V / s, which makes it possible to manufacture N transistors. and P of the same dimensions and having almost the same electrical characteristics.
  • germanium-based components Due to the high electrical leakage of the germanium-based components (small gap), this material can be used logically only "placed” on an insulator.
  • the germanium-on-insulator (or GeOI) substrates thus make it possible to limit leakage by the substrate and greatly improve the characteristics of the components produced.
  • germanium condensation in the English terminology.
  • germanium condensation a Novel Technical Fabrication of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETS by T. TEZUKA et al., Jpn. J. Appl. Phys., Vol. 40 (2001) 2866-2874 .
  • the first step of this technique consists in the epitaxial growth of a SiGe layer on a Silicon-on-Insulator (SOI) substrate.
  • concentration and the thickness of the epitaxially grown SiGe layer are preferably chosen so that the SiGe layer is in a state of pseudomorphous stress.
  • the second stage is a dry oxidation at high temperature (above 900 ° C) allowing the exclusive formation of the SiO 2 oxide due to a formation enthalpy (negative) greater than that of GeO 2 .
  • the germanium is trapped between two barriers: the interface with the buried oxide (BOX), fixed, and the oxidation interface in movement.
  • the germanium diffuses into the SiGe layer delimited by these two barriers, thus homogenizing the SiGe alloy.
  • the concentration of germanium is enriched during oxidation, thus forming a silicon-germanium on insulator substrate (SGOI).
  • the concentration of Ge can reach 100% by this technique for the formation of a pure GeOI substrate with a suitable oxidation time.
  • a first embodiment consists of a non-selective deposition of SiGe on a silicon-on-insulator substrate and masking, with the aid of an impermeable layer to oxidation, areas that do not want to enrich. The enrichment is therefore done on the unmasked areas.
  • the masked areas are silicon nitride.
  • An unmasked zone for example a transistor "channel” zone
  • masked zones for example transistor “source and drain” zones
  • SiGe diffusion Ge of the SiGe layer to the Si layer to balance the concentrations.
  • the figure 1 is a cross sectional view illustrating this embodiment.
  • the substrate comprises a silicon support 1 successively supporting a buried oxide layer 2, a thin silicon layer 3 and a SiGe 4 layer.
  • the reference 5 represents a mask of Si 3 N 4 . Localized enrichment occurs in unmasked areas (only one is shown). We get, in the unmasked areas, a layer of SiGe enriched in germanium, or even a germanium layer, resting on the buried oxide layer and surmounted by a silicon oxide layer.
  • a second embodiment consists of selective SiGe deposition in cavities made in a layer of material impervious to oxidation and defined on an SOI substrate.
  • the "canal" zone is enriched with germanium during oxidation, while the “source and drain” zones remain in silicon.
  • the figure 2 is a cross sectional view illustrating this embodiment.
  • the substrate comprises a silicon support 11 successively supporting a buried oxide layer 12, a thin silicon layer 13 and a silicon nitride layer 15. Cavities 16 (only one is shown) are formed in the nitride layer 15 until revealing the thin layer of silicon 13.
  • a deposit of SiGe 14 is made in the cavities 16.
  • the germanium enrichment is then achieved.
  • a germanium-enriched SiGe layer or even a germanium layer is obtained, resting on the buried oxide layer and surmounted by a layer of silicon oxide.
  • a third embodiment consists in the definition of mesa zones from a SiGe layer deposited non-selectively on an SOI substrate.
  • the SiGe zones are then enriched.
  • the "channel" and “source and drain” zones are in this case enriched in germanium, or even in germanium.
  • the figure 3 is a cross sectional view illustrating this embodiment.
  • the substrate comprises a support in silicon 21 successively supporting a buried oxide layer 22, a thin silicon layer 23 and a SiGe layer 24. Mesa zones are defined from the thin silicon layer 23 and the SiGe layer 24.
  • the enrichment in germanium is then achieved.
  • a germanium enriched SiGe layer is obtained, or even a germanium layer, resting on the oxide layer and surmounted by a layer of silicon oxide.
  • the Figure 4A which takes again the third embodiment, has a Raman spectrum of a mesa structure after etching and before enrichment where one clearly distinguishes a stress gradient at the edges of the mesa.
  • This phenomenon is known and is associated with the elastic relaxation in walking edges of patterns. This relaxation extends over a distance of about 3 ⁇ m.
  • the reference 25 represents the germanium layer obtained, surmounted by a silicon oxide layer 26. It can be concluded that the elastic relaxation at the step edges modifies the kinetics of oxidation locally and thus the final enrichment . This phenomenon is problematic because its impact is different according to the size of the patterns and will cause differences in final concentration on a plate of 200 mm configured according to the patterns present.
  • EP-A-1 801 854 discloses a semiconductor structure comprising a substrate, a sicilium oxide layer formed on the substrate and containing germanium and a SiGe zone formed above the silicon oxide layer, the SiGe zone being relaxed and enriched with Ge.
  • the creep temperature of the undoped silicon oxide is 1160 ° C. vs. If doped with 4,4.10 20 atoms / cm 3 of boron (corresponding to 5 m / or B 2 O 3), the flow temperature is lowered to 815 ° C. By doping the silicon oxide with germanium atoms from 4.1 to 7 m / o GeO 2, the creep temperature can be lowered from 1160 ° C. to 800 ° C. and 750 ° C. respectively.
  • the present invention proposes to overcome the problems described above by relaxing the stresses elastically (without creating defects) by using a low-temperature fluent oxide.
  • boron and phosphorus can, during enrichment, diffuse into the enriched oxide layer and become a pollutant. It is therefore proposed to make a GeOI located on a layer of SiO 2 doped Ge, which could be called SOI compliant, which allows during the progressive enrichment to relax the constraints and thus to obtain a GeOI without structural defects. In addition, the relaxation of these constraints also makes it possible to limit the observed inhomogeneities of oxidation.
  • a porous SiGe deposit is produced with a Ge concentration of the order of 1 to 45% germanium and advantageously of the order of 4 to 13 m / o Ge.
  • the porous SiGe can be obtained by electrochemical etching of a monocrystalline SiGe layer doped with boron or phosphorus in a solution based on hydrofluoric acid.
  • the subject of the invention is therefore a method for producing at least one GeOI structure by germanium enrichment of a SiGe layer supported by a silicon oxide layer, characterized in that the silicon oxide layer is doped with germanium, the doping of the silicon oxide layer with germanium is obtained by oxidation of a porous SiGe layer, the concentration of germanium in the silicon oxide layer being such that it lowers the temperature creep of the silicon oxide layer below the oxidation temperature of the SiGe layer made to allow the germanium enrichment of the SiGe layer.
  • the concentration of germanium in the silicon oxide layer is such that the molar percentage of GeO 2 with respect to the composition of the doped silicon oxide layer is between 4 and 13 m / o.
  • the germanium-doped silicon oxide layer is obtained by oxidation of a porous SiGe layer.
  • the SiGe zone is part of a mesa comprising a first silicon layer interposed between the germanium-doped silicon oxide layer and the SiGe zone, the mesa also comprising a second layer of silicon. silicon on the SiGe zone.
  • the sides of the mesa may be covered by protective spacers, for example silicon nitride.
  • the Figure 5A represents a silicon substrate 31 serving as a support for carrying out the method according to the present invention.
  • a layer 32 of Si x Ge 1-x monocrystalline doped boron or phosphorus having a germanium concentration such as one has, in the silicon oxide which will then be formed, a corresponding germanium concentration of 4 to 7 m / o GeO 2 (see Figure 5B ).
  • the layer 32 of SiGe is rendered porous by electrochemical etching in a solution of hydrofluoric acid.
  • the passage of a direct current for a certain period of time gives rise to the attack of the deep-doped SiGe and to the formation under the free surface of the layer 32 of a homogeneous layer of porous material whose porosity (percentage by volume of holes) can reach 90%.
  • the porosity and the thickness of porous SiGe formed increases as a function of the current density but also depends on the doping of the SiGe layer, the concentration of HF and other parameters.
  • porous SiGe layers of different thicknesses from 1 nm to a few hundred nm
  • a porous SiGe layer of 145 nm can be chosen with respect to the leakage barrier thickness compromise.
  • a monocrystalline silicon layer 33 of a few nm thick (see FIG. Figure 5C ). This layer will also serve as a mask during the oxidation of the porous SiGe layer 32.
  • the monocrystalline silicon layer 33 is deposited continuously on the porous SiGe layer 32 and then allows the growth of a Si x Ge layer. 1-x monocrystalline 34 necessary for enrichment in germanium (see Figure 5C ).
  • the areas which will then be localized germanium zones are defined by a lithographic process.
  • the figure 5D shows, for the sake of simplicity, only one of these zones.
  • the stack of layers 33 of silicon, 34 of Si x Ge 1-x and 35 of silicon is etched by means of plasma etching with a stop on the porous SiGe layer 32.
  • Dielectric material spacers 36 are then deposited on the flanks of the engraved structure. These spacers are for example made of silicon nitride. They serve to protect the flanks of the structure.
  • the porous SiGe layer 32 thus revealed will be the starting path for the oxidation of this layer 32 to obtain a layer of SiO 2 doped Ge.
  • the oxidation temperature may be between 400 ° C and 700 ° C, ideally 600 ° C. Because of the oxidation rate differences of the porous SiGe and the monocrystalline silicon layer 33, the silicon layer 33 serves as an oxidation barrier layer.
  • a layer 37 of SiO 2 doped with Ge see FIG. figure 5E ).
  • the germanium enrichment can then be carried out using the method known to those skilled in the art: dry oxidation at a temperature above 900 ° C. This temperature is greater than the creep temperature of the layer 37 of SiO 2 doped Ge. A layer 38 of SiGe enriched in germanium, or even a layer of germanium, is then obtained on layer 37. The layer 38 is then surmounted by a layer 39 made of silicon oxide.

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  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)

Claims (5)

  1. Verfahren zur Herstellung wenigstens einer GeOI-Struktur (Germanium-on-insulator, Germanium-auf-Isolator) mittels Germanium-Anreicherung einer auf einer Siliziumoxydschicht (37) getragenen SiGe- Schicht (34), dadurch gekennzeichnet, dass die Siliziumoxydschicht (37) mit Germanium dotiert ist, wobei die Dotierung der Siliziumoxydschicht mit Germanium mittels Oxydation einer porösen SiGe-Schicht (32) erhalten wird und die Germaniumkonzentration in der Siliziumoxydschicht (37) solcher Art ist, dass sie die Kriech- bzw. Fließtemperatur der Siliziumoxydschicht unter die Oxydationstemperatur der SiGe-Schicht (34) absenkt, wobei die Oxydation vorgenommen wird, um die Germanium-Anreicherung der SiGe-Schicht zu ermöglichen.
  2. Verfahren nach Anspruch 1, bei welchem die Germaniumkonzentration in der Siliziumoxydschicht (37) solcher Art ist, dass der molare Prozentgehalt (die prozentuale Molarität) an GeO2 bezogen auf die Zusammensetzung der dotierten Siliziumoxydschicht zwischen 4 und 13 m/o (Molprozent) beträgt.
  3. Verfahren nach einem der Ansprüche 1 oder 2, bei welchem die poröse SiGe-Schicht mittels elektrochemischer Einwirkung auf eine anfängliche dotierte SiGe-Schicht in einer Fluorwasserstoff-Säurelösung erhalten wird.
  4. Verfahren nach einem beliebigen der Ansprüche 1 bis 3 , welches die folgenden Verfahrensstufen bzw. Etappen umfasst:
    - Ausbilden der anfänglichen dotierten monokristallinen SiGe-Schicht (32) auf einem Trägersubstrat (31),
    - Ausbilden von Poren in der anfänglichen dotierten SiGe-Schicht (32),
    - Ausbilden einer ersten kontinuierlichen monokristallinen Siliziumschicht (33) auf der porösen SiGe-Schicht (32),
    - Ausbilden einer zur Anreicherung mit Germanium betsimmten monokristallinen Siliziumschicht (33),
    - Ausbilden einer zweiten monokristallinen Siliziumschicht (35) auf der zur Anreicherung mit Germanium bestimmten SiGe-Schicht (34),
    - Festlegen wenigstens eines Mesa in dem aus der ersten Siliziumschicht (33), der zur Anreicherung mit Germanium bestimmten SiGe-Schicht (34) und der zweiten Siliziumschicht (35) gebildeten Schichtstapel,
    - Abscheidung von Schutz-Abstandshaltern (36) auf den Flanken des Mesa,
    - Oxydation der porösen SiGe-Schicht zum Erhält der mit Germanium dotierten Siliziumschicht (37),
    - Anreichern der zur Germaniumanreicherung bestimmten SiGe-Schicht (34) mit Germanium.
  5. Verfahren nach Anspruch 4, bei welchem die Schutz-Abstandshalter (36) aus Siliziumnitrid bestehen.
EP09168024A 2008-08-22 2009-08-18 Verfahren zur Herstellung von lokalisierten GeOI-Strukturen, die durch Germanium-Anreicherung erhalten werden Not-in-force EP2157603B1 (de)

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FR0855671A FR2935194B1 (fr) 2008-08-22 2008-08-22 Procede de realisation de structures geoi localisees, obtenues par enrichissement en germanium

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EP2157603B1 true EP2157603B1 (de) 2011-10-12

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US (1) US9040391B2 (de)
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JP (1) JP2010050459A (de)
AT (1) ATE528794T1 (de)
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CN102184940B (zh) 2011-03-30 2014-01-08 清华大学 半导体结构及其形成方法
JP2014187259A (ja) 2013-03-25 2014-10-02 Toshiba Corp 半導体装置の製造方法
US9406508B2 (en) * 2013-10-31 2016-08-02 Samsung Electronics Co., Ltd. Methods of forming a semiconductor layer including germanium with low defectivity
CN104733320B (zh) * 2013-12-24 2018-01-30 中芯国际集成电路制造(上海)有限公司 场效应晶体管及其制备方法
FR3030882B1 (fr) 2014-12-22 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre comportant des transistors pmos a tensions de seuil distinctes
US9698224B2 (en) 2015-06-19 2017-07-04 International Business Machines Corporation Silicon germanium fin formation via condensation
US10600638B2 (en) 2016-10-24 2020-03-24 International Business Machines Corporation Nanosheet transistors with sharp junctions
CN107359203A (zh) * 2017-05-12 2017-11-17 惠科股份有限公司 显示面板和显示装置
US10147820B1 (en) 2017-07-26 2018-12-04 International Business Machines Corporation Germanium condensation for replacement metal gate devices with silicon germanium channel
US10690853B2 (en) 2018-06-25 2020-06-23 International Business Machines Corporation Optoelectronics integration using semiconductor on insulator substrate
US10699967B2 (en) 2018-06-28 2020-06-30 International Business Machines Corporation Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation
FR3088481B1 (fr) * 2018-11-14 2024-06-07 Commissariat Energie Atomique Procede de fabrication d’un transistor a effet de champ a jonction alignee avec des espaceurs
CN117672853A (zh) * 2022-08-25 2024-03-08 上海华力集成电路制造有限公司 SiGe沟道的形成方法

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JP3547419B2 (ja) * 2001-03-13 2004-07-28 株式会社東芝 半導体装置及びその製造方法
US7125458B2 (en) * 2003-09-12 2006-10-24 International Business Machines Corporation Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer
US20050221591A1 (en) * 2004-04-06 2005-10-06 International Business Machines Corporation Method of forming high-quality relaxed SiGe alloy layers on bulk Si substrates
US7141115B2 (en) * 2004-09-02 2006-11-28 International Business Machines Corporation Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers
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FR2902234B1 (fr) 2006-06-12 2008-10-10 Commissariat Energie Atomique PROCEDE DE REALISATION DE ZONES A BASE DE Si1-yGey DE DIFFERENTES TENEURS EN Ge SUR UN MEME SUBSTRAT PAR CONDENSATION DE GERMANIUM

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EP2157603A1 (de) 2010-02-24
JP2010050459A (ja) 2010-03-04
FR2935194A1 (fr) 2010-02-26
US9040391B2 (en) 2015-05-26
US20100044836A1 (en) 2010-02-25
ATE528794T1 (de) 2011-10-15

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